JPS59110186A - 半導体レ−ザの製法 - Google Patents
半導体レ−ザの製法Info
- Publication number
- JPS59110186A JPS59110186A JP57219542A JP21954282A JPS59110186A JP S59110186 A JPS59110186 A JP S59110186A JP 57219542 A JP57219542 A JP 57219542A JP 21954282 A JP21954282 A JP 21954282A JP S59110186 A JPS59110186 A JP S59110186A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- growth
- type
- active layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000012808 vapor phase Substances 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 abstract description 16
- 150000001875 compounds Chemical class 0.000 abstract description 11
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 101000650578 Salmonella phage P22 Regulatory protein C3 Proteins 0.000 abstract 2
- 101001040920 Triticum aestivum Alpha-amylase inhibitor 0.28 Proteins 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 22
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- -1 GaAs compound Chemical class 0.000 description 3
- 201000009310 astigmatism Diseases 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57219542A JPS59110186A (ja) | 1982-12-15 | 1982-12-15 | 半導体レ−ザの製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57219542A JPS59110186A (ja) | 1982-12-15 | 1982-12-15 | 半導体レ−ザの製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110186A true JPS59110186A (ja) | 1984-06-26 |
| JPH0437597B2 JPH0437597B2 (enrdf_load_html_response) | 1992-06-19 |
Family
ID=16737121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57219542A Granted JPS59110186A (ja) | 1982-12-15 | 1982-12-15 | 半導体レ−ザの製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110186A (enrdf_load_html_response) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5037776A (en) * | 1989-03-10 | 1991-08-06 | International Business Machines Corporation | Method for the epitaxial growth of a semiconductor structure |
| US5084410A (en) * | 1987-10-15 | 1992-01-28 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices |
| US5350702A (en) * | 1992-03-28 | 1994-09-27 | Samsung Electronics Co., Ltd. | Method for fabricating a dual-gate metal-semiconductor field effect transistor |
-
1982
- 1982-12-15 JP JP57219542A patent/JPS59110186A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| IEEE JOURNAL OF QUANTUM ELECTRONICS=1979 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5084410A (en) * | 1987-10-15 | 1992-01-28 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices |
| US5037776A (en) * | 1989-03-10 | 1991-08-06 | International Business Machines Corporation | Method for the epitaxial growth of a semiconductor structure |
| US5350702A (en) * | 1992-03-28 | 1994-09-27 | Samsung Electronics Co., Ltd. | Method for fabricating a dual-gate metal-semiconductor field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0437597B2 (enrdf_load_html_response) | 1992-06-19 |
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