JPS59108359A - 電界効果型トランジスタのピンホ−ル閉塞方法 - Google Patents

電界効果型トランジスタのピンホ−ル閉塞方法

Info

Publication number
JPS59108359A
JPS59108359A JP57219036A JP21903682A JPS59108359A JP S59108359 A JPS59108359 A JP S59108359A JP 57219036 A JP57219036 A JP 57219036A JP 21903682 A JP21903682 A JP 21903682A JP S59108359 A JPS59108359 A JP S59108359A
Authority
JP
Japan
Prior art keywords
line
drain
pinhole
gate line
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57219036A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0352229B2 (enrdf_load_stackoverflow
Inventor
Hajime Takesada
武貞　肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57219036A priority Critical patent/JPS59108359A/ja
Publication of JPS59108359A publication Critical patent/JPS59108359A/ja
Publication of JPH0352229B2 publication Critical patent/JPH0352229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP57219036A 1982-12-13 1982-12-13 電界効果型トランジスタのピンホ−ル閉塞方法 Granted JPS59108359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57219036A JPS59108359A (ja) 1982-12-13 1982-12-13 電界効果型トランジスタのピンホ−ル閉塞方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57219036A JPS59108359A (ja) 1982-12-13 1982-12-13 電界効果型トランジスタのピンホ−ル閉塞方法

Publications (2)

Publication Number Publication Date
JPS59108359A true JPS59108359A (ja) 1984-06-22
JPH0352229B2 JPH0352229B2 (enrdf_load_stackoverflow) 1991-08-09

Family

ID=16729244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57219036A Granted JPS59108359A (ja) 1982-12-13 1982-12-13 電界効果型トランジスタのピンホ−ル閉塞方法

Country Status (1)

Country Link
JP (1) JPS59108359A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6486113A (en) * 1987-09-29 1989-03-30 Casio Computer Co Ltd Manufacture of thin film transistor
US5877083A (en) * 1994-11-01 1999-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6486113A (en) * 1987-09-29 1989-03-30 Casio Computer Co Ltd Manufacture of thin film transistor
US5877083A (en) * 1994-11-01 1999-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPH0352229B2 (enrdf_load_stackoverflow) 1991-08-09

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