JPS5898975A - Vertical gate thin film transistor and manufacture thereof - Google Patents

Abstract

PURPOSE:To readily control the saturating characteristic of a drain current against a drain voltage by compsoing a mesa structure of the first metal electrode, an ohmic layer, a semiconductor active layer, the second ohmic layer and metal electrode on an insulating substrate. CONSTITUTION:Molybdenum is deposited as a drain electrode 17 on an insulating substrate 15 of non-crystal or the like, and a semiconductor ohmic layer 11 is grown as polycrystal. Then, the electrode 17 and the layer 11 are etched. Subsequently, a semiconductor active layer 12 is grown. Then, an N type impurity- added layer is grown as a semiconductor ohmic layer 13. Thereafter, molybdenum is vacuum deposited as a source electrode 18. At this time the layers 12, 13 and the electrode 18 are etched and removed at the unnecessary parts with the gate and the source electrode remaining. Then, the entire surface is covered with an insulating layer 14, and molybdenum is further deposited. Then, the electrode 16 is allowed to remain, and the molybdenum is removed.

Description

DETAILED DESCRIPTION OF THE INVENTION Akira Honkaku is an expert in the field effect transistor vclk, j! The details are related to the voltage ma characteristic m5tt valley easy V rubbing - direct start thin knitted transistor O #1 way and its -1 gate thin knitted transistor O how to follow V.

turtle! #OIA such as effect transistor (hereinafter referred to as FET)
Kameko &! JI is the one used for the 21st road, and the purpose is 1.
ji'ET, who has a 4 accent threat, is to blame.

Therefore, the value of Oji'NTri voltage is Oji'NTri, and the drain voltage to JII is as follows:
Each place ji10I? # It was designed to be sexual.

But saturated bone 1! Due to the poor performance, I had to review the FET0 and needles, and along with that, I changed the Brenna type F.
In h and T, the 1st to make the 1st and the 7th mask to be remade from the 7th mask, etc. are required. In addition, Yucho Guto Metan Tonjisuta (
(hereinafter referred to as 1/-TFT) 0 t-t-t 1 shown in FIG. 1C.

In the figure, 1 is the drain area, 2 is the base area, 3 is the source area, 4 is the insulating layer, D is the connecting substrate, and 6 is the gate voltage. In this case, the insulation layer 4, drain area 1, etc. are changed and the gate-reef 6 and base@
By changing the position of 11R2tD,
It was found that the saturation characteristics of the drain current change as the channel shapes indicated by iQc in the figure are clustered together.

However, the thickness of loquat 4 and drain sincerity area 1 is 10,000 yen. I failed.

The purpose of the present dragon is to easily measure the saturation characteristics of the drain mounting with respect to the drain voltage over a wide range of sub-L14V-TaFT.
Ruru makes a titfi- fist.

Non-invention is the metal ionization of the loquat on the loquat plate, the ohmic layer of the striped lQ cowhin bar, the semi-drying layer, the 20 ohmic deterioration, 42
Metal 11 This work 9 Mesa type O-through body t4 is connected, and this O is on the cedar fu through body and the board Kjll! 1m4t *yli
WC↓
The story goes to the upper princess, but it ends with 0. m'b present invention 0V-
In TFT, 1, the change of Ukina is very straightforward @1
Depending on the name of the 0 cover J14 Tsutaya, the saturation characteristics of the drain 11IL flow can be controlled over a wide range.

The present invention will be explained below using one circle.

Figure 2 4-+CI is the %O that was applied to the implementation of O system 10 of the present invention.
So, (a+ is positive #enkyo, (- is Hiraokaen, -1 is you dankankyo. In the figure, 11, l 3ri half 4 sticks, 12ri half fat body'#i sex j-114t1 loquat layer,
15 is the loquat i plate, 16 is the kate electric, 17 is the drain lily, 1B is the source lily, IQm.

Reference numerals 19b are a drain ionization hole and a north ion contact hole, respectively. Here, we set the 17t drain electrode and 18 as the source #L, or take the reverse O t, ↓7,18t-
It is also possible to have four source and drain regions. In this case, the insulating layer 14401, the drain 4 17 and the ohmic layer 1 on the insulating layer 14401
If the thickness is tdl, then a, > ct, (
It is related to D. Also, in this book, the second theory of non-invention written by Dorain et al.
4j figure yc board. The third problem is as shown in FIG.
I'll omit the explanation.

Due to the floating formation of V, drain, and wL reef, d, < d. 980V unexploded like this
-'1'F'i', it is possible to ash the drain area.

Kyu VC main body music tQV-1'i = "T (D- Pressure wax pressure 4th 1aj lbl y hippo. First, drain 1 pressure vg in source extinction area < horizontal axis, drain 4 Kaenen ID
Since the vertical axis V is t, "11 vG! l "lj
＠ is the V that changes the voltage of the valley to the gate 4 ratio, −
1. Contains characteristics.

Here, the 4th evil (Jl) is the 2nd evil god bl TCI ri 1
of yF −j d@ , > d@ t″m
Drain 戟戔17rap < jEp 戟L
*Shi fl) VL) -1D buttocks e 'tyy L,, plane 81 axis company O people 5 挔heavy O Karie. Also, Fig. 4 1k
l is 0Vp-1p% of the drain formed by taking the relationship O↓a,<d,O in Figure 3, and I&
! WC+
Address: 9141) V-TFT t! , Dray744817
Q*Satt is vomiting and drains due to IC! 110
The phase coupling characteristic is broadly defined as tBwc.

゛Book m1jljlJV-TF? ) JIm force mQlnk-Rin 2 figure molybdenum i Ll, 3 micron captivated, then jk & humorous j! The todoroki plate is softened by VC, and the ohmic layer is 11tJIL, which is 200 angstroms Nm.
Impure wisdom (1m, Anna 7, Hi-type, etc.) τ While firing one shot in the crucible, 7 recon warehouse Arashiko Nari ^ By watching the sky, Tayu Akira Gencho d Zel 0 Here, Drain 1 #IL Reef 17 and the semiconductor Ohmink layer 11 are etched with VC like Ichiri 2 ICI.
*Mother five microns
Zeru 0 power is here θ Chihiro dedication 16 恢J111112tyoP-
Shaft (aluminum).

Gallium) Created by making Jk jealous in the T-crucible/by using the Ichigo staff on Rickon to make it 4 times. Add the ohmic layer 12 and 1wi- to the ohmic layer 12 and 1wi- and add 200 layers to the ohmic layer 13. Long C source - 58 molybdenum total 0.2 microns A #1 layer. Here, the beef body) fi 12, 13 and rice 1g4 1tit 2 evil (C10 like gate part, sauce 4 traversing the agony and killing the unlucky warehouse worker Tsunang for a long time)゛Zuma CVL) '
@gcLp Bonmen wo IL Nrico/, Si false etc. O loquat connection-
14 to 0.15 micron thickness 41L, and further molybdenum tl, 2 micron A to urgent care. And Kate '4 Reef 16 - (cooking and Kosabe Q Mori 7' Den Harakura Etch/G decrease. m drinking vC loquat) Vla 14 WC
Contact hole 19M, L9 in Musb 1 etsunang
Open. I'm so angry, the above 0 drain turtles 1
7 warehouses vaporized red yC 癲 rotting time kakaki I! i13mKJ:,
P drain threshold value 17J humiliation dt Ranhan V is not widespread, drain I4c style saturation positioning is done with gold pin V this sea bream.

As stated above, VC's main name is V-'l'FT&Il:
In this case, 1iJiA warehouse to make it easy for Drey /

[Brief explanation of the drawing]

Figure 1 shows the conventional IQV-'1'l = "T warehouse front facing bribery, s2 figure-11bl IcI peels off the first embodiment of the dull light, and is negative (4 is the front facing #llr Enzu, tbtμ Heikakuzu,
IcI is your country - 虻η(: T o th j
Yokiu Iroma No. 20 Kyo 1 Self ν 1 No Susutome Ochomachi Kaku, No. 4 Kyo t41 bl is a strange book strong song 0V-Tk'TO 鴫厫鴫譫训書 t Bonakyo 6 11.13... Nyujin offering Ohmink 79912...Gojin Pei Ching Seihada 14...Join 4i5 Loquat-Zhuyiling 16...
Gate Denki 17...Dre 1 Arashi Love 18...Source *Iik lsj'a, 19b...Contact Small Businessman Canon Taishiki Hiresha

Claims (1)

[Claims] Gender 11) #! Wings, mackerel crystals, or monoti loquats and gills on the plate V-shaped mesa-shaped piled on the face 1st 1st tQ#p4 Oszetsuk layer, semiconducting oily layer, happy 20 chihiro body Ohmic layer, *JII electric reef V ionization paw of fan 2,
4 mesa-shaped structures, an insulating layer coated on the mesa-shaped 04 crawling rods, and a loquat layer t layered on the 1st floor of the sales menal 04 clay layer. The gate that was released is related to Rho! 1genit thin-knit transistor. (2) A metal film is placed on the amorphous, polyacrylic, or semi-crystalline substrate, and a 10 and a half 4 S + ohmic layer, a semiconductor GA TM , and a 2-layer metal film are placed on the metal film O. The process of forming a multi-connected conductor into a multi-connected conductor as shown in the semiconductor Ohmics dt cedar, and applying a metal film again on the semi-conductor body, and the process of forming a metal film on the semi-conductor and the semiconductor conductor. The body is etched to form a body in the shape of O#1, and an insulating layer is layered on the cedar structure and the insulating substrate, and a structure in the shape of a body is formed through the insulating layer. It consists of one wire with gate ionization in the l1lllll direction - the direction of Rm of a direct-start thin film transistor.