JPS5898953A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5898953A JPS5898953A JP56198115A JP19811581A JPS5898953A JP S5898953 A JPS5898953 A JP S5898953A JP 56198115 A JP56198115 A JP 56198115A JP 19811581 A JP19811581 A JP 19811581A JP S5898953 A JPS5898953 A JP S5898953A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- emitter
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 15
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56198115A JPS5898953A (ja) | 1981-12-08 | 1981-12-08 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56198115A JPS5898953A (ja) | 1981-12-08 | 1981-12-08 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898953A true JPS5898953A (ja) | 1983-06-13 |
| JPH0130303B2 JPH0130303B2 (enrdf_load_stackoverflow) | 1989-06-19 |
Family
ID=16385712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56198115A Granted JPS5898953A (ja) | 1981-12-08 | 1981-12-08 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898953A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63147841U (enrdf_load_stackoverflow) * | 1987-03-18 | 1988-09-29 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51128278A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Integrated circuit with resistance element |
-
1981
- 1981-12-08 JP JP56198115A patent/JPS5898953A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51128278A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Integrated circuit with resistance element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63147841U (enrdf_load_stackoverflow) * | 1987-03-18 | 1988-09-29 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0130303B2 (enrdf_load_stackoverflow) | 1989-06-19 |
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