JPS5898918A - Production of amorphous silicon - Google Patents
Production of amorphous siliconInfo
- Publication number
- JPS5898918A JPS5898918A JP19786381A JP19786381A JPS5898918A JP S5898918 A JPS5898918 A JP S5898918A JP 19786381 A JP19786381 A JP 19786381A JP 19786381 A JP19786381 A JP 19786381A JP S5898918 A JPS5898918 A JP S5898918A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- treatment
- hydrogen chloride
- plasma treatment
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はアモルファスシリコン作製室の前処理方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pretreatment method for an amorphous silicon fabrication chamber.
従来、アモルファスシリコン（以下ａ −８１と略す）
製造亀−過程としてのａ−８１作製室前処理方法には一
般に窒素ガスやアルゴンガス、賜しくはその混合ガスに
よる１２ズマ放電方法が広く用いられている。アモルフ
ァス半導体として応用上置も注目を集めている水素化＆
−８１は、通常Ｖランガスのグロー放電分解によって作
製される。Conventionally, amorphous silicon (hereinafter abbreviated as a-81)
As a pretreatment method for the A-81 manufacturing chamber as part of the manufacturing process, a 12-split discharge method using nitrogen gas, argon gas, or a mixed gas thereof is generally widely used. Hydrogenation and amorphous semiconductor applications are also attracting attention
-81 is usually produced by glow discharge decomposition of V run gas.
水素化ａ−８１は価電子制御が可能なことＫより各種の
半導体素子活性層として有用でるるか、１−８１属中の
欠陥や含有水素の制御、そして価電子制御を確実にする
ことは半導体素子としての１−８１の有用性確立のため
に最も重畳なことで魯る。したがって作製室内部の清浄
度によって成膜されたａ −８１の膜質制御に影響を及
ぼすことは許されない、シ′Ｄ為し、前記の窒素ガスや
アルゴンガスなどのプラズマ処理では前処理方法として
容易かつ安価であるが、成膜されたａ −８１の膜質に
大患なはらつきが生じるという欠点を有する。The fact that hydrogenated a-81 can control valence electrons makes it useful as an active layer for various semiconductor devices, and it is important to control defects and hydrogen contained in the 1-81 group and to ensure valence electron control. We regret that this is the most important step in establishing the usefulness of 1-81 as a semiconductor device. Therefore, it is not allowed that the cleanliness inside the fabrication chamber affects the control of the film quality of the a-81 film formed. Therefore, the plasma treatment using nitrogen gas or argon gas mentioned above is easy as a pretreatment method. Although it is inexpensive, it has the drawback that the quality of the a-81 film formed is subject to serious fluctuations.
本発明は上記事実を鑑みて考えられ九もので、比較的安
価かつ容易で作製されたａ−８１０膜質にばらつきが少
ないａ−８１作製室前処理方法を提供することを目的と
する。具体的には１−８１作製前に塩化水素ガスによる
プラズマ処理を行うことにある。The present invention was conceived in view of the above facts, and an object of the present invention is to provide a pretreatment method for an A-81 production chamber that is relatively inexpensive, easy to produce, and has less variation in the quality of the A-810 film produced. Specifically, plasma treatment using hydrogen chloride gas is performed before manufacturing 1-81.
実ＪＩＩＩＰ１
本発明による前処理方法は水素化ａ −８１膜質制−の
汀らつきを少なくするものとして、前処理に塩化水素ガ
スを流量５０ ｓｃｃｍ−５００５ｃａｎ 。Practical JIIIP1 The pretreatment method according to the present invention is to reduce the stagnation of the hydrogenation a-81 film system by using hydrogen chloride gas in the pretreatment at a flow rate of 50 sccm-5005 can.
Ｒシパワー１０Ｗ〜１００Ｗで１０分〜３０分放電処理
後＆−８１成ｇＨｃ入ったもので、曳好な結果を得た。After discharging for 10 to 30 minutes at an R power of 10 to 100 W, good results were obtained with the product containing &-81 g Hc.
上記処理後、窒素ガスを流量５０５ｃａｎ。After the above treatment, nitrogen gas was supplied at a flow rate of 505 can.
〜５００ ａａｏｙｚ ＲＦパワーｔｏｗ 〜ｔｏｏｖ
で１０分〜５０分放電処理したものは、さらに良好な結
果を得九。~500 aaoyz RF power tow ~toov
Even better results were obtained with discharge treatment for 10 to 50 minutes.
以下、比較例として、ＲシパワーＳＯＷで（１） 塩
化水素ガスを流量２５０ ｓｃｃｍで１５分間１ラズマ
処理。Hereinafter, as a comparative example, (1) hydrogen chloride gas was subjected to 1 lasma treatment for 15 minutes at a flow rate of 250 sccm using R Shippower SOW.
１２１、 （１１の処理後、窒素ガスを流量２５０ ｓ
ｃｃｍで１５分間、プラズマ処理。121, (After the treatment in 11, nitrogen gas was supplied at a flow rate of 250 s.
Plasma treatment at ccm for 15 minutes.
＋３１ （２）の窒素ガスによるプラズマ処理のみ。+31 (2) Only plasma treatment using nitrogen gas.
を施し九後、シランガス４０ ａａｃｍ、 水１１Ｅガ
ス１６０ ａｃｃｍ ｆｔシ、Ｒ１パワーｓｏｗで６０
分間成膜した水素化４−８１の光体導度のばらつきを第
１ｉ１ＱＫ示す、いずれも１０回成膜を行なった。After 9 days, silane gas 40 aacm, water 11E gas 160 accm ft, R1 power sow 60
The variation in the light conductivity of hydrogenated 4-81, which was deposited for minutes, is shown in 1i1QK. In each case, the deposition was performed 10 times.
＃１１図 塩化水素ガス忙よるプラズマ処理を施した（１）。#11 Figure Plasma treatment using hydrogen chloride gas was performed (1).
（２）はいずれも成膜され九本素化ａ−８１のばらつき
紘小さく良好な結果を得た。(2) was formed into a film, and good results were obtained with small variations in nine-layer a-81.
以 上 出願人 株式会社 諏訪精工舎that's all Applicant: Suwa Seikosha Co., Ltd.
Claims (1)
おいて、アモルファスシリコン作製前の作製室処理方法
として塩化水素ガスによるプラズマ処理を用いることを
ｓ像とするアモルファスシリコンの製造方法。Goo - A method for producing amorphous silicon using plasma processing using hydrogen chloride gas as a production chamber treatment method before producing amorphous silicon in an apparatus for producing amorphous silicon by discharge decomposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19786381A JPS5898918A (en) | 1981-12-09 | 1981-12-09 | Production of amorphous silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19786381A JPS5898918A (en) | 1981-12-09 | 1981-12-09 | Production of amorphous silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5898918A true JPS5898918A (en) | 1983-06-13 |
Family
ID=16381579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19786381A Pending JPS5898918A (en) | 1981-12-09 | 1981-12-09 | Production of amorphous silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898918A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4758527A (en) * | 1982-08-24 | 1988-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of making semiconductor photo-electrically-sensitive device |
| JPH07321364A (en) * | 1995-04-28 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US5521400A (en) * | 1982-08-24 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device with low sodium concentration |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
-
1981
- 1981-12-09 JP JP19786381A patent/JPS5898918A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4758527A (en) * | 1982-08-24 | 1988-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of making semiconductor photo-electrically-sensitive device |
| US5521400A (en) * | 1982-08-24 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device with low sodium concentration |
| US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
| US5556794A (en) * | 1985-05-07 | 1996-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having low sodium concentration |
| US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| JPH07321364A (en) * | 1995-04-28 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
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