JPS5896729A - Glow discharge device - Google Patents

Glow discharge device

Info

Publication number
JPS5896729A
JPS5896729A JP19497181A JP19497181A JPS5896729A JP S5896729 A JPS5896729 A JP S5896729A JP 19497181 A JP19497181 A JP 19497181A JP 19497181 A JP19497181 A JP 19497181A JP S5896729 A JPS5896729 A JP S5896729A
Authority
JP
Japan
Prior art keywords
glow discharge
gas
electrode
discharge device
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19497181A
Other languages
Japanese (ja)
Inventor
Tetsuyoshi Takeshita
竹下 哲義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP19497181A priority Critical patent/JPS5896729A/en
Publication of JPS5896729A publication Critical patent/JPS5896729A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To equally maintain gas density and to obtain uniform films by a method wherein partition plates are inserted perpendicular to two flat plate electrodes and placed between the two flat plate electrodes positioned in parallel with each other. CONSTITUTION:A gas flowed from an electrode 1 is dissolved by glow discharge to form films on substrates 5 on an electrode heated by a heater 3. In such a glow discharge device, gas flow control plates 7 are placed perpendicular to the electrodes 1, 2. In this way, the dissolved gas does not directly advance to an exhaust port 4 but advances to a substrate 4 for once. Therefore, film growth speed and the uniformity of the films are remarkably improved.

Description

【発明の詳細な説明】 本発明は2つの電極か互いに平行で平板であるクロー放
電装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a claw discharge device in which the two electrodes are parallel to each other and flat.

従来、アモ/LファスφシリコンtCトの(’F 成性
、1’【て、グロー放電法により発生したプラズマ中で
ガスを分解して作成する方法か主流とitつている。
Conventionally, the mainstream method has been to create AMO/L phase φ silicon tC by decomposing gas in plasma generated by a glow discharge method.

グロー放電法は大別して、(′1)直Mfグロー放電法
、C)容1結合型高周波グロー放電法、■誘導結合型高
周波グロー放電法などかある。また、グロー放電法は、
■プラズマ状態の把握かまだ十分にζねていtrい、■
各機関で用いられている装置の構造がp frろプ・ど
の理由で作成φ伺を統一的に規定でl trい。作成条
件の一つであるガスの供給方法にも4々tr J夫がf
rこれているか、静ttC型でかつカス密度を灼−に保
つこと旧1く、作成膜の均−情が保たねなかっ六−0一
般的り容部結合型高周波グロー放電装置に例を2るなら
ば、第1図に示すとと< tW tFi iかち流出し
たガスは排出口4に自Iって加わ、分解ζねる。この時
に電極1−電極2間でガス密度が均一であるこLが望ま
しいが、従来の装置ではこの点が不十分である。高周波
グロー放電によって分解ζわだガスは、妻板5に達する
前に排出口4に向うっけ出し、カス密度は不均一になる
と同時にl^の成長連間は遅くなる。
Glow discharge methods can be broadly classified into ('1) direct Mf glow discharge method, C) capacitance-coupled high-frequency glow discharge method, and (2) inductively coupled high-frequency glow discharge method. In addition, the glow discharge method
■We are still trying to understand the plasma state sufficiently.■
The structure of the equipment used in each institution should be uniformly regulated for any reason. The gas supply method, which is one of the creation conditions, also requires 4 tr.
If this is the case, the uniformity of the produced film cannot be maintained because of the static ttC type and maintaining the scum density at a high level. If, as shown in FIG. 1, < tW tFi i the outflowing gas automatically enters the exhaust port 4 and decomposes. At this time, it is desirable that the gas density be uniform between electrode 1 and electrode 2, but conventional devices are insufficient in this respect. The decomposed ζ ripple gas due to the high frequency glow discharge is ejected toward the discharge port 4 before reaching the end plate 5, and the scum density becomes non-uniform, and at the same time, the growth rate of l^ is slowed down.

本発明はかかる欠点を除去[たもので、その目的171
2つの電極が互いに平行で平板であるグロー放電ν装置
でカス留守を均一に稈も均−t〔作成膜を得る方法を枦
律するものである。
The present invention has obviated such drawbacks, and its objectives 171
A glow discharge device in which two electrodes are parallel to each other and are flat plates is used to uniformly remove scum and form a uniform film.

以下実施例に基づいて本発哄1を詳しく説明する。The present invention will be explained in detail below based on an example.

第2図は本発明のガス済制御板を含む容量結合型窩周波
グロー放電装置であり、1け電接1(ガス流出口)、2
け電極2.3はヒーター、4けガス排出口、5け基板、
61L+反応室、7けガス流制御板である。電極1から
流出またガスはグロー放電によって分解はねヒーターに
よって加熱シわた基板5上に膜が形成ζねる。嘩の均一
性は土質の膜であるための埴−条件であれ、膜の成長速
度は遅くないことが望ましい。ガス流制御板7けかかる
条件を満足するために置かねたもので、拐質は石英ガラ
ス、ステンレスitどで、プラズマの影豐f受けに?ぐ
膜作成温咬に嗣えらhる材質が適当である。形状2して
該制御板7け電極外周を覆う様な形1例えば電接LEで
円板を用いるtrらば制御板は円筒状のものとなるのが
適当である。また制御板にガス流通用の穴をあはること
で、ざらに細かいガス流側Nが可能である。ガス流制御
板7を入ねることで、分解されたガスは直接に#)出口
4に向らことはh (なh−母基板5に向らことにか乙
FIG. 2 shows a capacitively coupled cavity frequency glow discharge device including a gas control plate according to the present invention.
The electrode 2.3 is a heater, 4 gas outlet, 5 board,
61L+reaction chamber, 7 gas flow control plates. The gas flowing out from the electrode 1 is decomposed by glow discharge, and a film is formed on the wrinkled substrate 5 heated by the heater. Even though the uniformity of the film is due to the soil condition, it is desirable that the growth rate of the film is not slow. The gas flow control board was not placed in order to satisfy the above conditions, and the material was made of quartz glass, stainless steel, etc. to receive the plasma influence. A material that can be used to create a warm bite is suitable. If the shape 2 is such that the control plate covers the outer periphery of the seven electrodes, for example, if a circular plate is used in the electric connection LE, it is appropriate that the control plate be cylindrical. Furthermore, by drilling holes for gas flow in the control board, a roughly fine gas flow side N is possible. By inserting the gas flow control plate 7, the decomposed gas can be directed directly to the outlet 4 (or to the motherboard 5).

したか〜1−1膜成長速lv及び膜均一性が著(〈向上
する。また、ガス流制御板の高濾に傾斜を付i+排出口
4側を高くまたものも同様Km好な結果をイnる。
1-1 The film growth rate lv and film uniformity are significantly improved.Also, by adding a slope to the high filter of the gas flow control plate and making the i+discharge port 4 side high, good results were also obtained. In.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の容量結合型高周波グロー放電装慣、第2
図は本発明による装置である。 1・・・・・・電極1(ガス浦出口) 2・・・・・・電極2(基板支持板) 3・・・・・・ヒーター 4・・・・・・ガス排出口 5・・・・・・基板 6・・・・・・グロー放電堆積室 以  上 出願人 株式会社 諏訪精工舎 伏理人 弁理士 培土 務  4− 第1図 第2図
Figure 1 shows a conventional capacitively coupled high frequency glow discharge setup;
The figure shows a device according to the invention. 1... Electrode 1 (Gas port outlet) 2... Electrode 2 (Substrate support plate) 3... Heater 4... Gas outlet 5... ...Substrate 6...Glow discharge deposition chamber and above Applicant Suwa Seikosha Co., Ltd. Furijin Patent attorney Tsutomu Tsutomu 4- Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 2つの電極が互いに平行で平板であるグロー放電装置に
於いて、電極1と電、椿2間に什切枦を該平板に垂直に
人ねたごとを特徴さするグロー放電装置。
A glow discharge device in which two electrodes are parallel to each other and are flat plates, and a glow discharge device is characterized in that a stub is placed perpendicularly to the flat plate between the electrode 1 and the electrode 2.
JP19497181A 1981-12-03 1981-12-03 Glow discharge device Pending JPS5896729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19497181A JPS5896729A (en) 1981-12-03 1981-12-03 Glow discharge device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19497181A JPS5896729A (en) 1981-12-03 1981-12-03 Glow discharge device

Publications (1)

Publication Number Publication Date
JPS5896729A true JPS5896729A (en) 1983-06-08

Family

ID=16333386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19497181A Pending JPS5896729A (en) 1981-12-03 1981-12-03 Glow discharge device

Country Status (1)

Country Link
JP (1) JPS5896729A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111414A (en) * 1983-11-22 1985-06-17 Semiconductor Energy Lab Co Ltd Plasmic vapor-phase reaction method and manufacturing equipment thereof
JPS6196724A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Capacity coupling type plasma chemical vapor deposition device
JPH09115836A (en) * 1995-09-29 1997-05-02 Hyundai Electron Ind Co Ltd Thin film vapor deposition apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111414A (en) * 1983-11-22 1985-06-17 Semiconductor Energy Lab Co Ltd Plasmic vapor-phase reaction method and manufacturing equipment thereof
JPH0244141B2 (en) * 1983-11-22 1990-10-02 Handotai Energy Kenkyusho
JPS6196724A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Capacity coupling type plasma chemical vapor deposition device
JPH09115836A (en) * 1995-09-29 1997-05-02 Hyundai Electron Ind Co Ltd Thin film vapor deposition apparatus
US5948167A (en) * 1995-09-29 1999-09-07 Hyundai Electronics Industries Co., Ltd. Thin film deposition apparatus

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