JPS6196724A - Capacity coupling type plasma chemical vapor deposition device - Google Patents

Abstract

PURPOSE:To prevent the generation of various abnormal modes of plasma by a method wherein the plasma is confined in the expected vacant space. CONSTITUTION:An insulative barrier member 10 is provided surrounding a pair of electrodes 3 and 3. The height L (the length along the direction astriding both electrodes 3 and 3) of the barrier member 10 exceeds the distance H between the two electrodes, the inside diameter R of the barrier member 10 is larger than the electrode diameter W, and the two electrodes 3 and 3 are housed therein. Also, the gap (d) between the circumferential part of the two electrodes 3 and 3 and the corresponding inner face part of the barrier member 10 is provided to let out raw gas as shown by the arrow (fr) in the diagram, but the actual measurements can be set at an experimentally suitable value. The gap (d) is 50mm or less in general, but desirably, it is 20mm or less, and an aperture or a part to be used for evacuation of air is provided separately on the barrier member 10 and the electrode 3. However, in the case where the length L of the barrier member 10 is shorter than the distance H between the electrodes, it is better to have D=0 without having the gap.

Description

Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a capacitively coupled plasma CVD (plasma chemical vapor deposition) apparatus used for growing a thin film on a substrate, and in particular to , relates to a mechanism for confining a source gas plasma generated between a pair of electrodes in a reduced pressure chamber within a predetermined spatial region.

<Conventional technology> There are several types of plasma CVD methods, and they can be roughly classified according to the power supply: ■ Direct current method, ■ High frequency method, ■ Microwave method, and ■ Method using both electromagnetic fields. There will be four.

Among them, amorphous silicon (a-9
i) The high frequency method is considered to be the most effective when depositing M.

However, there are also two types of high-frequency methods: an inductively coupled method in which excitation energy is applied to the raw material gas in the chamber via high-frequency coils placed around the chamber, and There is a capacitive coupling method in which high frequency energy is applied directly between a pair of parallel plate electrodes.

However, at present, for the production of amorphous silicon films, etc., capacitively coupled devices conforming to the latter method are mostly used.

The schematic configuration of such a capacitively coupled plasma CVD apparatus is as follows:
It is as shown in FIG.

A pair of parallel plate electrodes 3, 3 are provided in a decompression chamber 2 defined by a suitable housing 1, and a raw material gas is supplied from one side of the electrodes, and a target thin film is supplied to the other side. The substrate 7 on which the image is to be produced is held.

In general, the electrode 3 on the gas supply side is surrounded by a shield plate 5, and the heater 4 for determining the substrate temperature during thin film formation is incorporated into the electrode on the holding side of the substrate 7.

The raw material gas is exhausted from the decompression chamber through a suitable exhaust boat 9, and its flow is schematically indicated by an arrow fr in FIG.

Energy for converting the raw material gas into plasma in the decompression chamber 2 is also supplied as high-frequency power by a high-frequency power source 6 whose both ends are connected between the two electrodes 3, 3.

The electrode 3 to which the hot side of this high frequency power source 6 is connected is the cathode, and the other electrode 3 on the ground side is 77
Also called a node, this device itself is also called a parallel plate plasma CVD device due to the shape of the pair of ′:rL poles and their mutual arrangement.

Minor improvements to the device based on this basic configuration 1
Various proposals have been made regarding the method of applying force to the '1E source, but in all of them, the basic configuration remains the same, resulting in the configuration shown in Figure 7.

(Problems to be Solved by the Invention) The biggest problem with these conventional devices is that when a large amount of power is supplied from the high-frequency type 116 to increase the deposition rate, abnormal plasma discharge often occurs. This means that it is easy. When this occurs, the electrical characteristics of the produced thin film will definitely deteriorate, and in some cases, the production of the thin film itself will become impossible.

In the conventional plasma CVD apparatus shown in FIG.
It stays only within the cylindrical spatial region defined by and the distance between both electrodes 3.3.
Even in the conventional device, the space defined by the cross-sectional area of WXH can be regarded as the space region in which normal plasma discharge is to be generated.

However, if the high-frequency power applied between the electrodes 3 and 3 is increased, abnormal plasma discharge is likely to occur as described above, and in such a case, the generation mode will be controlled as shown in Figs. It becomes difficult.

In the abnormal mode example shown in No. 8 UgJ (A), parasitic discharge is occurring against the housing wall surface, as shown by the hatched area protruding from the planned cylindrical empty flit area (WXU) in a triangular shape. .

In addition, in the same figure (B), although the plasma discharge is occurring only within the regular planned space area in the - center.

As shown by the overlapping diagonal lines and vertical lines, there are localized areas where the concentration of plasma emitting species is significantly different from other areas.
On the contrary, in FIG. 2C, plasma discharge is occurring not only within the planned spatial region but also within substantially the entire space within the decompression chamber 2.

However, when using the conventional JA equipment as described above, in order to prevent the occurrence of such abnormal plasma discharge and maintain good film quality of the thin film produced, the supplied high-frequency power must be limited to a reasonably low value. This is because the probability of occurrence of abnormal plasma discharge increases as the supplied power increases.

However, as mentioned earlier, the film formation speed increases as the power supply increases, so in the end, these passive methods are based on sacrificing the film formation speed. I have no choice but to.

In fact, for example, in the case of forming a 7 mol, FAS silicon film for making a solar cell, the film forming rate has conventionally been considered to be at most 2 to 3 people/see, which is already the limit. This means, for example, that it takes about 30 minutes to obtain an amorphous silicon film with a thickness of about 5000λ. This amount of time is still not short enough to give us full satisfaction.

The present invention has been made in view of these circumstances, and is designed to confine plasma within a predetermined spatial region and maintain normal plasma discharge without causing various abnormal modes as shown in each figure 8. .

As a result, the capacitively coupled plasma C can increase the supplied high-frequency power without any inconvenience in order to increase the deposition rate.
The aim is to provide a VD device.

Of course, there is no point in increasing the film deposition accuracy if the film quality deteriorates, so the above objective is also to provide an apparatus that can increase the film deposition rate without at least deteriorating the film quality. You can also paraphrase it.

In order to achieve the above-mentioned object, in the present invention, a raw material gas is introduced between a pair of electrodes arranged oppositely in a decompression chamber, and a high frequency wave is applied between the pair of electrodes. A capacitively coupled plasma CVD apparatus that converts source gas into plasma using electric power and deposits a thin film on a substrate placed in the plasma atmosphere, wherein the plasma is generated in a spatial region spanning between the pair of electrodes. A capacitively coupled plasma CVD apparatus is provided, characterized in that an insulating barrier member is provided that surrounds a predetermined spatial region and confines the plasma within the predetermined spatial region.

<Function> When an insulating material barrier member is newly introduced according to the present invention as described above to the basic equipment configuration of the existing capacitively coupled plasma CVD equipment of this kind described at the beginning, the problem that occurs between a pair of electrodes The resulting plasma is intentionally confined within the interior space of the barrier member.

Therefore, the probability of occurrence of an abnormal plasma mode that largely extends beyond the edge of the electrode in plan view can be suppressed to a sufficiently low level.

Furthermore, as previously mentioned, in the past, it was only possible to have the concept that the WXH cross-sectional spatial region defined by the area of a pair of electrodes was roughly the expected plasma generation region, but with the present invention, For example, the planned spatial region in which plasma is to be generated can be intentionally defined to match the size of the internal space of the barrier member. The spatial dimensions of the plasma generation region can also be selected in advance in terms of design.

In any case, an insulating barrier member confines the plasma within the intended spatial region, preventing abnormal plasma and
As a result of preventing the mode from occurring, it has become possible to provide an apparatus that can tolerate the application of large amounts of power in order to increase the film formation speed. In this case, an extremely high film formation rate can be obtained without deterioration of the film quality, and in some cases even improvement.For example, as mentioned above, the conventional equipment required about 30 minutes to process 5,000 people. The amorphous silicon film of 1
By applying the present invention, it becomes possible to create the film in just one minute or less without deteriorating the film quality, but rather improving it.

Embodiments FIG. 1 shows a schematic configuration of a basic embodiment of a capacitively coupled plasma CVD apparatus of the present invention.

Symbols corresponding to those in FIG. 7 indicate corresponding identical or similar constructors, and since these constructors can, in principle, be used as in the conventional example, the previous explanation will be used and the explanation in this article will be omitted. There is also. In this embodiment, the feature of the present invention is manifested in the insulating material barrier member lO surrounding the pair of electrodes 3, 3.

In general, both electrodes 3.3 are often circular as shown in FIG.
0 also uses a hollow cylinder with an annular cross section.

Therefore, the cross-sectional width W of the electrode 3 previously described with reference to FIGS. 7 and 8 also becomes the electrode diameter, and the internal space width R of the barrier member IO in the cross-sectional view of FIG. 1(A) is It may be read as the inner diameter of the barrier member IO.

The specific material of the barrier member 1O is not particularly limited as long as it is an insulator that satisfies the plasma confinement function, which is the essential function of the barrier member 1G in the present invention.

However, considering that it can be used stably over a long period of time without the need for exchange, it is necessary to use 1
A material having plasma resistance, such as a quartz tube, a Pyrex tube, or an alumina tube, is preferable.

Furthermore, if the thin film to be created is made of amorphous silicon, which is mainly used as an electronic material, one must be particularly careful about contamination with impurities; I am satisfied even if I get a job.

In the first illustrated embodiment, the height C (length in the direction spanning both electrodes 3.3) of the barrier member 10 exceeds the distance H between the two electrodes, and therefore the inner diameter R of the barrier member 10 is greater than the distance H between the two electrodes. It is larger than the diameter W, and both electrodes 3.3 are housed inside.

Furthermore, the gap d between the peripheral edges of both electrodes 3 and the corresponding inner surface of the barrier member 10 is provided because it is necessary for raw material gas to escape, as shown by the arrow fr, but in reality The dimensions of the vessel may be determined experimentally to an appropriate value; in general, as will be apparent from the experimental examples described below, the dimensions should be 50 mm or less, more preferably 20 mm or less, and the opening for exhaust or the boat should be paved. If it is provided separately on the wall member 10 or the electrode 3, or if the length L of the barrier member 10 is made shorter than the inter-electrode distance H (both will be described later),
It is better to set d=o without taking a gap.

Below, three experimental examples in which amorphous silicon films were created using the apparatus of the present invention will be listed and discussed.

Regarding each of the experimental examples from Experimental Example (1) to Experimental Example CIII), the respective experimental results are summarized in Tables 1 to 3 at the end of this Example section.

In addition, in each experimental example, in order to compare the case where the present invention is applied and the case where the conventional example is unchanged,
Experiments with odd numbers were conducted using the conventional apparatus configuration as shown in FIG.

The case where the apparatus configuration of the present invention as shown in FIG. 1 is adopted is for an even number.

In any of the experimental examples, the conventional device shown in Figure 7 used for odd-numbered experiments has a parallel plate circular electrode pair with a diameter W = 200mm and an electrode spacing H = 20x. Model number PED-3 made by model ANELVA
Using a capacitively coupled plasma CVD apparatus named 01, on the other hand,
As an example of the apparatus of the present invention used for the even-numbered experiments, an apparatus was used in which an appropriate barrier member 10 was incorporated in each experiment with respect to this commercially available apparatus.

□ Experimental Example (I) □ This Experimental Example CI) corresponds to Table 1 whose experimental results are listed at the end of this article, but for experiment numbers tl to I4, the substrate temperature was set at 300°C and from 15 to 8 Keep the board temperature up to
The temperature was 350°C.

In any experiment with an even number of experiments, the length L = 50 for the uninvented insulating barrier member 10.
mm, inner diameter R = 220 mm, therefore, with the electrode peripheral part (standard cc per m1nute), reduce pressure cha? The pressure inside the bar is approximately 1.000 sTorr to approximately 2.00 sTorr. After adjusting the main valve to obtain OOOmTorr, I tried to create a-9i:H115j by applying high frequency power ranging from 240W to 260W.

The film-forming time was 3 minutes, and the converted hydrogen concentration was as listed in Table 1 for each experiment number.

However, with the conventional apparatus configuration, odd number experiment number m1.
s3. @5. Heat? In the experiment, as shown in Table 1, when applying high frequency power, the reflected wave became too large than the traveling wave, and high frequency power of the above order could not be applied, and a-5i: Creating H1t5j was completely impossible in actual purchase.

On the other hand, in the case of even-numbered experiments number-2 to part-B using the device configuration of the present invention, almost no reflected waves were generated, and a-5
i:)! Not only was it possible to form [[] as expected, but the film formation rate reached a maximum of 93.5λ/sec.

This value is an astonishing value, which is 30 to 40 times or more compared to the conventional common-sense film formation rate of 2 to 3 λ/sec mentioned at the beginning.

Therefore, in this experimental example (I), a relatively large amount of raw material gas is caused to flow into the decompression chamber 2, and the chamber internal pressure is reduced to 1.0.
When setting the OOsTorr to about -2,000sTorr, it was not possible to apply high frequency power to perform plasma CVD in the conventional 411 formation, but by applying the present invention, it is not only possible to perform the plasma CVD under the same conditions. This shows that the film formation rate can be extremely high.

This means that plasma energy can be concentrated and applied only within a limited narrow spatial area inside the barrier member 10, and therefore stable plasma can be obtained under conditions with few reflected waves. This is thought to be the result of

In addition, in Table 1, Eg apt is 1 created a-Si
: Hllll optical band gap, σph is photoconductivity, and σd is dark conductivity. As can be seen from other experimental examples described later, these electrical properties of a-5i :H@ according to the present invention obtained in this experimental example CI) are even better than those of the conventional example, which has a slow film formation rate. Not a bad value at all.

Rather, as seen in Experimental Example @8, 83.5 people/se
What is the photoconductivity σph even if we achieve an astonishingly high deposition rate of e. , 5X 1G'5Q/c
It is also possible to obtain a value similar to that of the intestine, which is a considerably superior value compared to conventional examples.

Taking this point further, it has been conventionally thought that when a relatively large amount of raw material gas is flowed, as in this experimental example (1), the electrical characteristics of the produced film tend to deteriorate. On the other hand, this is not necessarily the case when the plasma is successfully confined as in the present invention; on the contrary, it is preferable that as a result of confining the plasma within a predetermined area, the applied high-frequency power can be used efficiently. Therefore, it can be said that the decomposition of the raw material gas is promoted, and the electrical characteristics of the resulting film are also improved.

□ Experimental example (■) □ This experimental example (n) corresponds to Table 2 at the end of this section, but
The substrate temperature was uniformly set to 300°C in all experiment numbers @3 to @14.

In addition, the insulating barrier member lO according to the present invention has a length L=5 in any experiment with an even number of experiments.
A Pyrex tube with an inner diameter R of 240 mm and a gap d with the electrode peripheral portion of 20 m5 was used.

The raw material gas flowed was 5izHs, and the flow rate was 5oscc.
x (standard cc per m1nuts),
The pressure inside the vacuum chamber is kept quite low by fully opening the main valve, approximately 300mTorr to 400mTorr.
It was set within the range of r.

The applied high frequency power was 80W in the experiment of 19.110.
.

111, @12 (7) Experimental Te1t120W, SoL Te1
13,114+7) In the experiment, 181)W was used and the film forming time was 4 minutes.

What can be seen from this experimental result is that even with the conventional device configuration, the film formation rate increases as the applied power is increased up to a certain power value, but As can be seen from the comparison,
This means that when the power value exceeds this value, the film formation rate rapidly decreases.

In other words, the upper limit of the power (11) that can perform plasma CVD without causing abnormal plasma discharge with the conventional configuration is not so high, and if this upper limit is exceeded, various characteristics will deteriorate rapidly. .

In fact, under conditions where the pressure inside the chamber is low despite the relatively large flow rate of the source gas, as in the odd-numbered experiments in Experimental Example (II), the high-energy plasma column is It is said that the space between the two electrodes alone cannot hold up, and an abnormal mode as shown in Figure 8 (^), that is, a phenomenon in which a parasitic discharge occurs on the inner wall of the chamber and the chamber becomes unstable, is likely to occur. However, this experimental example proves exactly that.

On the other hand, in the apparatus employing the configuration of the present invention, as the power increases and the film formation rate increases beyond the conventional limit, the various properties become better, which is an extremely desirable result.

・What is the deposition rate in experiment example 14? It exceeds OA/sec and has improved electrical characteristics. Considering the above-mentioned conventional example, this is because the configuration of the present invention allows the plasma to be confined within a predetermined spatial region, and the supplied power can be used effectively, as described above in connection with Experimental Example (I). I have no choice but to think that this is due to the fact that it has become like this.

This fact can also be confirmed from the comparison on the film thickness distribution curve shown in FIG. 2 for reinforcement.

With the conventional device that did not use a Pyrex tube, when a high frequency power of nov was applied in experiment number 13, unlike in the previous experimental examples Ill and 19, the closer to the center of the electrode, the faster the film formation rate was. It is declining. Originally, this should have been the opposite result, even if it were to decline.

Therefore, in this state, the energy of the plasma decreases as it gets closer to the center of the electrode, and it is considered that an abnormal plasma discharge occurs in the mode shown in FIG. 8(^).

On the other hand, in the case of the device according to the present invention, experiment number 114
Even when +SOW is applied, the phenomenon that occurs during normal plasma discharge, in which the film formation rate is higher closer to the center of the electrode, still occurs. That is, it can be seen that normal plasma discharge is guaranteed.

Frame □ Experimental example (m) □This experimental example (m) corresponds to Table 3 at the end of this article, but the substrate temperature was uniformly set to 30°C for all experiment numbers @15 to 120.
The temperature was 0°C.

Furthermore, the insulating barrier member 10 according to the present invention has a length L =
A quartz tube with an inner diameter R of 220 intestinal layers and a gap d with the electrode periphery d = 10+wm was used.

The raw material gas flowed for 1 knee is Si)+4, and the flow rate is small ji-
Rabbitμ5ccx (standard ec per m1nu
te), and the pressure in the -pressure chamber is approximately 1,00 (1
I set it to ++Tarr. -The applied high frequency power is the experiment number 15,816, 81? , 118
) 20111 in the experiment. In the experiments using Soshite 8111 and 120, the power was 40 W and the film forming time was 15 minutes.

Further, the results from the viewpoint of film thickness distribution are shown in FIG.

In a conventional device that does not use a quartz tube, the applied high-frequency power is 40
At the point w, it can be seen that the film thickness distribution, especially at a position 5 cm from the center, varies greatly at each position in the circumference. This is considered to be the result of the occurrence of an abnormal plasma discharge mode in which the concentration of plasma emitting species locally differs significantly, as shown in FIG. 8(B).

On the other hand, when the device of the present invention is used.

Without this large non-uniformity of film thickness distribution,
A straightforward result was obtained in which the dt film speed improved as the applied high frequency power increased to 101.20 W and 40 M. This shows that the present invention was able to confine plasma within a predetermined spatial region inside the quartz tube and prevent abnormal plasma discharge. Of course, compared to the conventional example, there are no problems with regard to electrical characteristics.

Each experimental example has been described in detail above, but the film produced by the apparatus of the present invention is amorphous in these experimental examples.
It is not limited to silicon films.As is clear from the principle of plasma confinement of the present invention, any material that has been or should be able to be created using a conventional capacitively coupled plasma CVD device can be used. can benefit from the improvements of the present invention.

Furthermore, the diameter and length of the insulating material barrier member 10, the vertical and horizontal surface shapes, and the positional relationship with both electrodes are determined by the size of the planned spatial area, the electrode shape and dimensions of the device to be incorporated, etc. etc., may be arbitrarily changed depending on various factors.

Figures 4 through 6 briefly illustrate some of these modifications.

Figures 4 (A) to (C) show the case where the dimension and direction of the gap d formed between the peripheral edge of one or both of the electrodes 3.3 is changed because the length L is different. It shows.

In FIGS. 4(D) and (E), the barrier member 10 is in direct contact with the peripheral edge of one of the electrodes, and therefore a hole is formed for the raw material gas flow t' only between it and the other electrode. Indicates when

In the case shown in FIG. 4 (, F), the concept of a gap d whose dimension can be taken in the lateral direction, which has been described so far, disappears, and the gap d extends over the entire circumferential direction of the barrier member IO, or A port P is formed in a portion of the direction. This can be seen as a result of the barrier member 10 being composed of two parts, an upper and a lower part, and one of which is fixed to one of the electrodes 3.3.

In the modified example shown in FIG. 4 CG), both the upper and lower ends of the barrier member 10 are in complete contact with each electrode surface, so the gap d in the concept described above is zero. Therefore, the lK feed gas flow f
The hole r is formed as a dedicated port P in the electrode portion.

In the cases of FIGS. 4(H) and (1), the inner diameter or lateral cross-sectional inner width R of the barrier member IO is smaller than the diameter or cross-sectional width W of the electrode 3; L is also considerably shorter.

Of course, if the electrode shape is non-circular, for example, rectangular, the cross-sectional shape of the barrier member 10 may also be rectangular if necessary.On the other hand, in the cases of FIG. Even if it is an electrode, a cylindrical #wall member 10 may be used to intentionally change the intended plasma generation area to a cylindrical space.

Alternatively, the barrier member may have a configuration in which its shape differs depending on the position where the cross section is taken, for example, as if it were configured from several combinations shown in FIG. 4.

In particular, when the present invention is applied to a plasma CVD apparatus of a substrate transport type, that is, an automatic continuous growth apparatus for nine films, an opening is required for loading and unloading the substrate and for passing the transport mechanism. The vertical cross-sectional shape etc. differ depending on the key points.

For example, as shown in FIG. 5(A), even if a barrier member 10 with a rectangular cross section is provided that uniformly surrounds the electrode 3 (in this case, rectangular) when viewed from the top, one side of the electrode Looking at the parallel cross section 5B-58, the length L of the barrier member 10 is
is sufficiently long and the substrate 7 conveyed in the direction of the arrow ft also appears to be completely contained within the barrier member IO in terms of height position.
When viewed along C, it is also possible to consider a shape in which the height of that part of the barrier member 10 is reduced so that an opening part pt through which the substrate 7 passes is formed in the transport direction rt.

In addition, as shown in FIG. 6, there is a double-row automatic continuous growth apparatus, that is, the center electrode 3 is used as a common electrode, and there are two electrodes 3.3 facing each other with this in between. The present invention can also be applied to a plasma CVD apparatus or the like having a film forming portion of two substrates 7.7 by using the pair of barrier members 10.10 in an appropriate shape and appropriate arrangement.

For example, as shown in tjS-6 figure (A), the substrate 7
When viewed facing the direction of movement, it appears that there is a pair of IM4 members to, to at an appropriate height covering each film-formed portion, and this is a cross section taken along line 6B-88 in Fig. 6(A). As shown in FIG. CB), when viewed along the substrate transport direction, it can be configured such that the barrier member 10 appears to exist along the entire length of the substrate transport path.

In general, it is desirable to avoid turbulent flow of the raw material gas near the substrate surface, so when considering the shape of the barrier member, especially the position, size, and cross-sectional shape of the gap (d) and bow (P) through which the raw material gas flow passes, , it is better to give consideration to this point.

The examples of the present invention have been described in detail above, but before moving on to the effects of the present invention, Tables 1 to 3 showing the experimental results of each of the previous experimental examples CI) to (m) are shown below. I will list them on page 2.

Once -U-1-'' and then 1-≦Ll2 <Effects of the Invention> According to the present invention, by confining plasma in a predetermined spatial region, it is possible to prevent the occurrence of various abnormal modes of plasma. .

Therefore, it becomes possible to apply a large amount of power, which was previously impossible to apply, and it is also possible to obtain an extremely high film formation rate.

Furthermore, as a result, the applied high-frequency power can be used effectively, so even though the film formation rate has been increased, it is also possible to obtain the extremely desirable result of improving the +151 quality.

All of these are remarkable effects that cannot be expected from conventional capacitively coupled plasma CVD apparatuses of this type.

Furthermore, being able to improve *+a speed is extremely significant in this type of industrial field, as productivity can be greatly improved, which is advantageous in reducing the cost of extremely expensive plasma CVD equipment and its peripheral equipment. Not only that, but it can also significantly reduce labor costs and utility-related running costs.

Of course, book 1! It can also contribute to lower costs due to the mass production effect of various products using films made by I+.

Incidentally, as is clear from the principle of the present invention described in detail above, there are no limitations on the film produced by applying the present invention or the raw material gas therefor.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram of a basic embodiment of the capacitively coupled plasma CVD apparatus of the present invention, and FIG. 2 is a diagram showing the film formation in the case of the conventional apparatus and the apparatus of the present invention in Experimental Example (n). Characteristic curve diagram showing differences in thickness distribution, Figure 3 is an experimental example (m)
Characteristic curve diagrams similar to the above-mentioned FIG. 2, FIG. 4, and FIG.
6 are explanatory diagrams of modified examples of the shape and arrangement of barrier members used in the apparatus of the present invention, and FIG. 7 is a basic schematic configuration diagram of a conventional capacitively coupled plasma CVD apparatus. FIG. 8 is an explanatory diagram of various abnormal plasma generation modes. In the figure, 2 is a decompression chamber, 3 is a discharge electrode, 4 is a heater,
6 is a high frequency Tr! , source, 7 is the board, 9 is the exhaust port, 1
0 is the insulating barrier member, W is the cross-sectional width or diameter of the electrode, H is the distance between the electrodes, R is the cross-sectional width or diameter of the barrier member, L is the height of the barrier member or the length in the direction spanning between the electrodes, and d is the electrode periphery. The gap formed between the part and the inner wall surface of the barrier member, fr is the raw material gas 1. ft.
is the substrate transport direction. Designated agent Agency of Industrial Science and Technology Figure 3 1 x---'r'r<i so
5cx4 IiaL, high frequency power (
W) Surface circumference and power (W) No. 41 Tube 5 Figure 6 Figure T Procedure Amendment (1 phantom 1986 λ Month Z day 1 Indication of incident 1988 Patent Application No. J/75gg No. 2 Name of the invention Capacitively coupled plasma O'VD device 1-3-1 Kasumikaseki, Chiyoda-ku, Tokyo +14 Institute of Industrial Science Director Tatsu Todoroki 4 Designated agent 6 Statement of contents of amendment Page 13, Line 1 Next to "350°C", insert it as shown in the attached sheet. In order to hold this quartz tube, as shown in Figure 1A, put an eaves over the shield plate j on the electrode side connected to the high frequency power source. The distance between the electrode in which the heater is embedded and the quartz tube is adjusted by moving the quartz tube placed on the eaves up and down together with the eaves of the shield plate.

Claims (1)

[Claims] A source gas is introduced between a pair of electrodes placed oppositely in a reduced pressure chamber, the source gas is turned into plasma by high frequency power applied between the pair of electrodes, and a substrate placed in the plasma atmosphere is placed on the substrate. capacitively coupled plasma CVD to deposit thin films on
The apparatus is characterized in that an insulating barrier member is provided in a spatial region extending between the pair of electrodes, surrounding a predetermined spatial region in which the plasma is to be generated, and confining the plasma within the predetermined spatial region. Capacitively coupled plasma CVD equipment.