JPS589327A - Semiconductor device and method of producing same - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention generally relates to semiconductor devices, and in particular to P-M l
Semiconductor device using molten glass or glass for passivation of I-container and method for manufacturing such semiconductor device,
The present invention also relates to a method of manufacturing a plurality of semiconductor devices from a single large area semiconductor material.

PRIOR ART Glass-sealed thyristors, transistors and diodes according to the prior art are used to protect the edges of a semiconductor component in order to form a hermetic protection of a PM junction formed at the interface of regions of opposite conductivity. A glass layer was fused to the area. A typical example of glass sealing using such conventional technology is Tokugansho! Reference - #4. No. t01 (41 Kaiyo Kuratei-lgeo, gkuko) i.e. Belgian Patent No. ttz
, bob issue “Glass capsule diode (Glass
s 1naapsul'eLtel Dlode)
J and Patent Application Sho, tlI-j j, ri-7 (JP-A No. 101,31!), i.e. Belgian Patent No. 1
7 j, of- issue [Glass sealed diode (Glass
8ealed Diode) J is available.

These prior art techniques use semiconductor materials with tapered end faces, resulting in an asymmetrical shape. Asymmetry increases distortion caused by temperature changes during repeated use.

Another example of a glass capsule moat device according to the prior art is disclosed in Japanese Patent Application No. 141. ri No. 06 (4I Kaisho 5z-fJ, No. #-), i.e. I'O Application No. 'It30 code oz.
No. [Method for manufacturing glass-sealed multi-chip (Glass8e
aled Multihip Proc@ss)
It is detailed in J. This prior art technique uses a pre-shaped glass ring during manufacture. The use of such glass preforming requires extensive fixtures to ensure its proper initial positioning and to ensure that the glass is held in the required position during fusing.・Another example of a capsule type device is the patent application No.
No. 170 Application No. 11101349,
Reference: “Crow Passivated High Power Semiconductor Device (
Glams Pa5sivat@l HlghPowe
r 85m1oonduotor Doma10・-)”
detailed in.

This patent application describes a method for forming multiple devices from large semiconductor components and the resulting devices.

According to this patent application, a large semiconductor member is formed with vertically aligned annular grooves from its top and bottom surfaces. These grooves are separated by a portion of the member. A glass paste is placed in the groove and fused there. Next, the outside of the annular groove is cut to separate the currently separated area inside the groove from the larger member.

Referring to Figure 1, the above-mentioned patent application No. 18j&-104,3
A large area, high power thyristor 10 according to the prior art No. 01 is shown.

This thyristor 10 has a cathode/emitter region, a cathode φ base region 141, and an anode/base region 11.
and an anode/emitter region/I.

P-I between areas /J and /Il! Junction 20, there is a P-summer junction-2 between regions 1 and 11, and a P-M junction Jl' between regions 14 and it.Groove J6 is a PM junction from the top surface Jf to the inside of the thyristor. The groove J0 extends deeper than the position of JJ, and the groove J0 extends from the bottom surface beyond the summer junction O into the inside of the thyristor.

lW Coro and Jo each have the same amount of solidified glass.
JJ and 741 are filled and they passivate over the portion where PM junctions JJ and J- terminate into the groove.

The glass in the groove is lead-aluminum borosilicate (lead-aluminum borosilicate).
approximately 0.0/J tm (0,1 mil) for aluminum borosilicate* glass and approximately 0.0101 wm (J
, 0 mil). This difference in thickness is
This is due to the fact that zinc borosilicate glasses have a coefficient of expansion closer to silicon. Therefore, lead-
The coefficient of expansion of aluminium-borosilicate glass or other suitable glass is that of silica flakes.
The glass coating will be thicker if the expansion coefficient is changed to approach that of silicon by adding . It could be Oj Ot■.

There is a cathode-emitter electrode J1 in ohmic contact with the cathode-emitter region Saw and the cathode-base region /II. floating gate electrode It
is in electrical contact with the cathode emitter region /J and cathode pace region lda, and the gate electrode furnace is in ohmic contact with the cathode base region /II. cathode・
Emitter electrode JA, floating gate electrode 31 and gate electrode furnace O are arranged on top surface Jl.

The anode-emitter electrode # is in ohmic contact with the anode-emitter region 1g along the bottom surface #.

A silicon portion 6 is disposed along the outer periphery of the groove roller 30, and the glass portion 3 and J portion pad and bat the thyristor.

The prior art disclosed in Japanese Patent Application No. 104-3041 mentioned above has obvious disadvantages. First, etching grooves from both the top and bottom surfaces and glassing and solidifying into the grooves increases manufacturing effort. Increasing the number of steps in manufacturing operations reduces yield. First, providing a glass passivated bottom surface, ie, the back side of the semiconductor material, reduces the contact area with the electrodes and increases the thermal resistance of the device.

DISCLOSURE OF THE INVENTION An object of the present invention is to provide a semiconductor device with reduced thermal resistance.

Another object is to provide a manufacturing method that reduces the number of ingredients.

That's true.

One aspect of the invention, broadly speaking, comprises a semiconductor member having opposing top and bottom surfaces and a central portion separated from a peripheral portion by an annular first groove, the first groove being located on the top surface. the semiconductor member extends a first distance less than the thickness of the semiconductor member, and at least a portion of the semiconductor member includes at least one region of mutually opposite conductive waterfalls and at least one 1'-19 joint. and forming a groove in the conductor member, which extends a first distance smaller than the seventh distance, in front of the top surface of the semiconductor member and inside the groove in the conductor member. arranged,
There is a solidified glass disposed within the first groove and fixed to the wall thereof, at least a portion of which is surrounded by the first groove, and the first distance is between the true surface and the P- In a semiconductor device, the distance is larger than the distance between N junctions.

Another aspect of the invention, in a broad sense, is to form a plurality of glass plates from a large area semiconductor member having opposing true and bottom surfaces.
A method of manufacturing a passivated semiconductor device, the method comprising:
forming a seventh groove having a first depth annularly through the top surface of the semiconductor member, a first groove having a first depth smaller than the first depth through the true surface; forming a first annular groove extending into the semiconductor member to a depth of 0.25 mm; depositing a glass paste consisting of ζ glass powder and a vehicle within the first groove; removing the vehicle and removing the glass; The method of manufacturing a semiconductor device includes the steps of solidifying the semiconductor member in the first groove, and completely cutting the semiconductor member outside the first groove.

Embodiment of the Invention The present invention will be described in detail by way of an embodiment with reference to one drawing.

Referring to FIG. 1, a large area semiconductor component j0 is shown which is used to fabricate a glass passivated large area, high power semiconductor device, particularly a glass passivated large area, high power thyristor, in accordance with the present invention. Preferably, the silicone is suitable for use in

Here, large area means that the diameter of the semiconductor member of the thyristor is at least /J, 7sII (O0j0 section). diameter is at least is, ttz
~-3,//cm■ (o, bJz~0.91 inch)
Semiconductor devices are made on silicon chips. A semiconductor device with a diameter of 33.0 m (/3 inches) is currently being planned.

Here, high power means at least 1000 to 1A/A.
It includes one thyristor that can handle voltages of DD volts or higher.

As a typical example, a large-area semiconductor member I0 made of a suitable starting material is prepared in Te4. J■ (3.0 inches) or larger diameter and approximately 0. It has a thickness of JO reference tws (/comil), n-type conductivity, and a resistivity of #0 ohm senna.

The semiconductor member j0 has a true surface jJ and a bottom surface 3II. The true surface /J and the bottom surface /II are each substantially flat and parallel. True surface octopus and bottom surface j#
The edge part in between! 4 is widespread.

Referring to FIG. 3 in addition to FIG. 1, the semiconductor member S0
The true surface of! - means, for example, the product name r Waiko) (Wa
80 J, and a plurality of annular grooves S6 are etched into the semiconductor member jo to a predetermined depth from the true surface SJ. The predetermined depth of this type of semiconductor device is typically at least 5 microns, and is usually much deeper, anyway! From the bottom surface 2g of 6 to the bottom surface of the semiconductor member 30! The distance @X'' must be equal to or smaller than the depth of the next Pg diffusion performed by IC/J.

The width of the groove is typically about 0.1.3 at the true surface 3- of the semiconductor member j0! ■(Jj み Jし).

The distance I between the grooves is approximately 7 m (0,j inches).

A suitable etching agent (・toh
ant) consists of 1 part of nitric acid, 1 part of hydrofluoric acid and 1 part of acetic acid by volume.

groove! After the etching in step 6, the semiconductor member jO is etched with hydrogen peroxide solution, (110!), hydrochloric acid aqueous solution (Hot-HmO)
and hydrogen peroxide-ammonia hydroxide solution (H,O)
1m140H-11,0) were used alternately, and washing was performed with water between each cleaning process 1.

The aqueous hydrochloric acid solution consists of one part of hydrochloric acid, one part of water, and one part of hydrogen peroxide by volume.

The hydrogen peroxide-ammonia hydroxide-aqueous solution consists of 1 part hydrogen peroxide, 1 part ammonia hydroxide, and 1 part water by volume.

The water used for washing is It megohm water.

Referring to the figure in the library, after etching tilllj4 and cleaning after etching, the semiconductor member 3 is etched using conventional diffusion or epitaxial diffusion and masking techniques.
0, create a structure as shown in Figure 1. Also in Figure 1 is a part of the semiconductor member j0 and the groove adjacent to it! Only 6 is shown.

The part shown in FIG. 1 is a high power thyristor 10 to be further fabricated according to the present invention.

It will be appreciated that in a practical case, the diffusion process that determines the junction depth and doping concentration should be adjusted according to the desired characteristics of the semiconductor device; the diffusion specifications described below with respect to Figure 1 are IOO.

This is for manufacturing a thyristor that can handle 1 to 1 Joo bolts.

High power thyristoro 0 has 4 cathode/emitter regions,
Cathode base area 4, anode base area 61
and an anode/emitter region 41.

There is a PM@ match between each adjacent region. ? -Summer Junction 70
is formed between area base - and 4#, P-19 go two is formed between areas 1 and 66, and P-iris junction 7 is formed between areas 64 and 6.

The cathode-emitter region 6J has a thickness of lS to 20 microns and has n-type conductivity, approximately to as atoms/
It is doped to a concentration of aa''.

Cathode-base region A41 is 6! It has a thickness of up to S microns and has a P-type groove conductivity of approximately j x / 0” atoms/c
It is doped to a surface concentration of m''.

The anode-base region 66 is 0. /&! /~0,/
It has a thickness of 90 j (6,3 to j mils), and has a thickness of n
The conductivity of the type is θ~! It has a resistivity of θ ohm to 0 cm. The anode base region 16 is the unconverted N portion of the silicon cord.

The anode-emitter region it has a thickness of 61 to 3 microns and has a conductivity of at least j x /0''.
The thyristor has an unacceptably high forward voltage drop when the surface 111 degrees of the anode-emitter region 6t is doped to below kXlo"atoms/clL". become.

Referring to iH, the part surrounded by groove j6 can also be used to form a dynamic gate thyristor 10. Elements that are identical or similar to corresponding parts in Figure 1 are designated with the same reference numerals.

The mJ% between Figure 1 and one structure in Figure 1 is as follows:
(2) Both regions have a kll-like structure.
1-summer junction between area/AJ and 4th grade 0 and area J
There is an arcuate junction core 0 between 4J and 1#, 0) the part IJ of the cathode base region 6 reaches the mold surface 31 of the dynamic ψ gate thyristor I0.

Art base area 66 and art-emitter area 6
t is the same for both thyristors.

In a preferred method of manufacturing the large area, high power thyristor of FIG.
The reference and anode emitter regions 4t are formed by diffusion in the semiconductor member j0 of FIG. The anode base region 46 is made of all portions of the semiconductor member 30 that are not subject to diffusion.

Next, the mold surface jJ is coated by well-known masking techniques, and in the case of the high power thyristor 0 shown in FIG.

In the case of the dynamic gate thyristor lO of FIG. 3, the mold surface jJ is covered by well-known masking techniques and the main cathode emitter region /4J and the auxiliary cathode emitter region JA are located on the desired portions of the mold surface jJ. is formed.

Alternatively, in the case of the dynamic gate thyristor S0 of FIG. 3, the top surface! A continuous nil cathode emitter region extending throughout the semiconductor member 30 is formed by diffusion, and then photomasking techniques are utilized. Portions 12 of the cathode base region 4 are formed at predetermined locations by diffusing the cathode emitter region.

Referring to FIG. 6, following the diffusion of the high power thyristoro 0 of FIG. 1, a first groove fJ is etched into the high power thyristoro 0.

The first groove fJ is etched inside the first groove j1. That is the first groove! 4 surrounds the first groove I. The first groove 11k is formed by the same etching and cleaning process 11k as described for the first groove 34.

The first groove fJ is formed in the silicon member so that it is connected to the P-N junction 7.
1 to the anode base region 46, thereby separating the forward biased PN junction 70 and the reverse biased PN junction 7J.

The first groove ItJ has a width approximately equal to the width of the first groove j6 at the top surface j-, i.e. approximately 0.4J1 m (Jj mils), and approximately 0.3 Um (/j mils) at the bottom surface 13 of the groove. ) width.

First ditch! 4 and the first groove fJ is not very delicate. However, in order to prevent the misalignment that occurs during etching for forming the shadow of the first groove fJ from reaching the first groove 34, the first groove t is formed not at the vertical portion t but at the P-summer junction 7J. The horizontal part of t! As extending through, the spacing '''2' in Figure 4 is approximately O0 4 J wm (J o mil).
It has been found that %co.

A suitable glass powder, preferably having a nominal particle size of about 10 microns, is mixed with a suitable vehicle to form a paste and printed into the first groove t1 using a screen printer.

The glass employed according to the invention first of all has an expansion coefficient close to that of silicon, e.g.
/0-'cm''/cm/°C and must be substantially free of alkali ions.

In addition to this (1) Glass must have structural strength.

That is, loss of glassiness (dsvitr) during the diffusion process
) or phase separation (phaae s@parat
ion) must not occur.

(2) The glass must have good chemical stability to the environment and humidity.

(3) The glass must be wettable and fused or fixed to the semiconductor material, in this case silicon.

(4) The glass must not chemically damage the surface of the semiconductor material, usually silicon.

(5) The thermal properties of the glass must be such that it does not distort at temperatures within the limits of semiconductor devices or semiconductor materials, usually silicon.

(6) The glass must have a melting point below the deterioration temperature of the semiconductor device.

(The final product must be resistant to thermal shock or temperature cycling and have mechanical strength.

In general, lead-aluminum borosilicate glasses have been found to meet the above conditions.

In particular, glasses with the following composition have been found to be suitable: Weight ratio (X) 810, JO-B, O, /J-
J.? pbo * o-tei tA1 snow O8
Co6 Is Innotech's secret number IP particularly good? The glass commercially available as Yume & has the following composition: Component Weight ratio (X) Sin, JA Shitei B, 0. 7! ±3 Pl)O, $3±3 mlam 3 ±l Another glass that appears to be particularly good is a glass also available from Inochiku Co., Ltd. as IF Rinsin 0, which has the following nominal composition: It is: Component Weight Ratio (X) 810, DaQ B, O, t-Pro, #9. JM, O1, j Lead borosilicate glasses are also suitable.

It is preferable to have the following composition: Component Weight ratio (X) Sin, j O-Q O B, O, / J-co J pbo # o -e Zinc aluminum silicate glass should also satisfy, It will have the following composition: Ingredients Weight ratio (X) ZnO #0-A; O U, O, Co6 810, ! 0-40 Another particularly good glass is the zinc-borosilicate glass, especially the Genea Glaswerk Schott & Diene (JIltN IRG-M 8W1! RK801) glass.
10T'r 4 Gm1li) from Ru@aoJt-
It is commercially available as 002 and has the following composition: Ingredient Weight ratio C%) ZnO reference 〇-10 B, O, / -, t 810, ! 0-40 810 of these. About/to % by weight may be included as particles of silica.

The vehicle mixed with the glass to make the paste may be one of seven types of liquids or a combination of multiple liquids that suspends and holds the glass powder in it, but it must not cause any damage to the glass particles. ,In addition,
The vehicle must be easily dissipated from the paste by heating.

Examples of suitable vehicles include ethyl cellulose and butylaarbitol.
) is a mixture of Other satisfactory vehicles include the Electro Science Fist Laboratory (1leetr
There is a product commercially available from the company O8o1*noe Laboratory under the designation V@hial・*san00.

What vehicle is suitable for use with zinc-borosilicate glasses? It consists of ethyl cellulose (I) and butyl carpitol (/jO).

A suitable paste for practicing this invention is a G0 paste with a nominal particle size of ioμ. -002 Glass powder 0Il and ethyl cellulose-butyl calpitol vehicle J! I
This paste is printed into the first groove fJ using a screen printer with a 14J mesh screen. This printing continues until the paste fills the groove l- of jIJ.

The paste should be spread throughout the groove in about 1 to 10 degrees, preferably 10 degrees.

The whole is then heated at a temperature in the range of ion to izo degrees Celsius.
Excess vehicle is removed from the paste by heating for 1 to 10 minutes. This step is usually carried out by heating with a heat lamp.

Next, the whole thing was placed in a crystal bath and heated in a furnace.
J7 ~ things at a temperature in the range of 0℃! Heat for minutes. 2
The purpose of this step is to remove or burn out all the vehicle from the glass in the grooves, preferably for 30 minutes at 00°C. That is true. Therefore, the time and temperature may be set to achieve this objective depending on the vehicle used.

Following this dissipation step, without cooling, the total
At temperatures ranging from SO to '110°C (J0°C is preferable), see! heated for 5 to 5 minutes (preferably 10 minutes);
The glass is completely solidified and bonded to the silicone.

If, as is desirable, these dissipation, solidification and bonding take place in one furnace, the temperature will be lower than the desired 3.
It is preferable to raise the temperature from 00°C to J0°C for about 70 to JO minutes. After heating at J0°C for 10 minutes,
The furnace is cooled in about 73 minutes to a temperature ranging from 10°C to 200°C. Furnace is about 70 years old
The temperature is then lowered to about 810° C. for about 73 minutes. This temperature of pgθ°C is maintained for about 20 minutes and then lowered to about #lθ°C over about /j minutes.

After this temperature is maintained for about 30 minutes, the furnace temperature is lowered to room temperature lζ at a rate of about 10° C. per minute.

This cooling or annealing cycle prevents harmful distortion of the glass.

This solidified glass is indicated by the symbol Ida in Figure #11.

Glass 10 is then coated with a layer of a suitable photoresist using standard photolithography techniques.

This photoresist may be either a negative resist or a positive resist, but a negative resist is preferred.

Examples of desirable negative resists include Hunt Way:
) -) a, :C streak - (Hunt Wayaoa
t80) and Eastman Kodak (la@t
Some products are commercially available under the designations KTPR and KMIH manufactured by ManICodak.

An example of a suitable positive resist is Schiffley (8hi
IJ! TO and /J! Some are commercially available as OH.

After depositing the photoresist layer 16 on the glass plate, a plurality of thyristors, shown as high power thyristor 1o, are cut using a laser cutting machine (laser 5orib).
A silicon semiconductor member j.

separate from

The purpose of the resist is to protect the glass from molten silicon particles generated by laser cutting.

As a laser cutting machine, a 11: Yag laser or a similar one is commercially available. For a sophisticated laser cutting machine, Quantronics Corp.
The 4o1 type manufactured by Ix0orp is commercially available.

The high power siris ri 4o has an annular second groove! Approximately 0.1 DI to /, 0 / J m+11 from the outer wall of 1 to
(-〇 to go4) It is separated from the semiconductor member j0 along the distant line it. In practice, disconnection is usually @
/ Groove! The inner wall of 4 is approximately t, zttwm(b
Ko,! It is carried out at a distance of mils). First ditch!
The distance from the inner wall deco of No. 6 or the outer wall deco of No. 6 to the cutting line does not have to be exact.

Referring to Figure 9, electrical contacts or electrodes 90.941
and? 4 are glued as cathode, gate and anode electrodes, thereby completing the thyristor as detailed below.

Referring to Figure 1, the dynamic gate in Figure 3
A thyristor is shown in which a groove l- of t/IIJ is formed according to the invention and a solidified glass l-
I is filled with I, and the glass IP is filled with a resist layer t.
4.

All of the above-mentioned Q steps, ie, forming the groove IJ with %#IJ, filling the glass with I#, solidifying the glass, and covering I with the photoresist layer of the glass, are all performed by the method described above.

The thyristor is then cut into line I using the laser also described above.
The silicon semiconductor member is cut along I.

Following laser cutting, the electrodes, namely the anode electrode, the cathode electrode right and the gate electrode are cut into their respective regions #cII.
I! It will be worn.

The electrode is approx./! A bimetallic structure is preferred, consisting of a seventh layer of titanium (T1) with a thickness of approximately JD, 000 μm and a first layer of titanium (T1) with a thickness of approximately JD, 000 μm.

The metal electrodes are deposited by vapor deposition or sputtering.

Metal deposition or bonding of the electrodes is preferably done using a shadow mask, defining the cathode-emitter, gate and amplification gate on one surface and the anode-emitter on the opposite surface.

Following the fixation of the electrodes, the photoresist layer 14 is burned away from the glass in an air atmosphere at #00°C.

Referring to Figure 1, there is shown a large area, high power dynamic gate thyristor manufactured in accordance with the present invention.

The dynamic gate thyristor t0 consists of 16 main cathode/emitter regions, 6 auxiliary cathode or emitter regions, a cathode pace region 641, an anode pace region 64, and an anode emitter region 6g.

P-M junction between area/AJ and 6# 0, area roller, 2
P- between 1# and 01 region 6# and 66 P-
There is an M junction 7- and a PM junction 7 between regions 66 and 4.

The first groove is on the back surface! A seventh predetermined distance 1x'' extends from the top surface into the thyristor, and is surrounded by the first groove S6 so that a first groove extends from the top surface into the thyristor. The first predetermined distance is greater than the distance between the top surface 3J and the P-violet junction.

The first groove fJ is filled with an amount of solidified glass l#.

The solidified glass in the groove is approximately o, oi Jtm (o, z
mil), or about 0.0 sOtm (J, 0 mil) if zinc borosilicate glass is used. This difference in thickness is based on the fact that zinc borosilicate glass has a coefficient of expansion closer to that of silicon; therefore, the coefficient of expansion of lead-aluminum borosilicate glass or other suitable glass is similar to that of silica. If the expansion coefficient can be varied to approximate that of silicon by mixing the pieces, the glass coating can be made thicker than or equal to 0.0 j Of III.

Electrodes for cathode and emitter! 0. Electrode for auxiliary emitter?
J, the negative electrode 9I+ for the gate and the electrode t4 for the anode/emitter are fixed by the method described above.

Voltage 0 is in ohmic contact with areas 16 and 4. The electrode 9J is in ohmic contact with the area roller J and the 6th pin. Electrode t6 is in ohmic contact with cathode pace region 6, and electrode t6 is in ohmic contact with anode emitter region 6j.

Thyristors made in accordance with the present invention may be encapsulated in resin or otherwise encapsulated in a case using known methods.

A thyristor manufactured by the manufacturing method of the present invention and encapsulated with a silicone resin such as that commercially available as G18R//cosilicone resin is used.
It has been demonstrated to be stable for over 00 hours.

For some voltages, it may not be practical to form deep grooves only from the top surface as described above.

In such a case, the first layer is molded into the interior of the silicon semiconductor member from both the top and bottom surfaces.

Referring to Figure 10, for example? 4. Large area semiconductor components such as n-type silicon components with a diameter of 7 inches
o, the first groove j is on the top surface of the semiconductor member 30! - and a first groove isb is molded from the bottom surface j4I of the semiconductor member j0.

The first groove j4 and the third groove izb are formed by etching as described above.

First ditch! 6 and the third groove lj6 is the distance 1x” between VJ
is set to be equal to or smaller than the subsequent P11 mineral dispersal.

Subsequently, P-type and n-type regions are formed in the semiconductor member by diffusion techniques or diffusion epitaxial techniques in the same manner as described above.

After the diffusion step or epitaxial diffusion step, the grooves fJ are also formed as described above, and then the glass
The padding, fixing of contacts, and laser cutting from a large area semiconductor member are all performed by the above-described method to complete the thyristor.

Although the present invention has been described above in detail in relation to a specific thyristor, it will be readily understood that the present invention is equally applicable to diodes and transistors.

[Brief explanation of drawings]

2 is a side sectional view of a glass passivated thyristor according to the prior art; a top view of a silicon semiconductor component; FIGS.
FIG. 7 is a side sectional view of a thyristor manufactured according to the present invention; FIG. 7 is a side sectional view of a silicon semiconductor member manufactured according to the present invention; A side cross-sectional view of a thyristor manufactured according to the present invention, and FIG.
4: First groove, 408 high power thyristor, &J: Cathode/emitter region, 6: Cathode/base region, 64
Near node base region, 6t near node emitter region, RI0°7-, RI0. J'IO: Ah MI
I, l: first groove, r*nigaras, 16: photoresist layer, /A coni main cathode/emitter region, J6
−: Auxiliary cathode/emitter region.

Claims (1)

[Scope of Claims] l Consisting of a semiconductor member having opposing true and bottom surfaces and a central portion separated from a peripheral portion by an annular seventh groove, the seventh groove being closer to the semiconductor member than the true surface. II smaller than the thickness of the semiconductor member in parts, , and #
s/, at least a portion of the semiconductor member includes at least one region of mutually opposite conductivity type and at least one P-toe junction; an annular first groove extending within the member by a first distance smaller than the first distance; disposed inside the first groove; The semiconductor device includes an assimilated glass to be fixed, at least the portion is surrounded by the first #I#c, and the first distance is greater than the distance between the true surface and the PM junction. The semiconductor device according to claim 1, wherein the glass in the groove is lead-aluminum-borosilicate glass. 3. The semiconductor device according to claim 1, wherein the glass in the groove is zinc borosilicate glass. The central portion of the semiconductor member includes three regions, with adjacent regions having opposite conductivity and an F-Ni layer between them.
A semiconductor device according to claim 7, claim 1, or claim 3, in which a plurality of glass passivates are formed from a large-area semiconductor member having opposing true and bottom surfaces. A method for manufacturing a semiconductor device, the step of forming a first groove having a seventh depth annularly through the true surface of the semiconductor member;
forming an annular first groove extending into the semiconductor member through the true surface and within the inner diameter of the first groove and to a first depth smaller than the first depth; Glass made of glass powder and vehicle
A semiconductor device comprising: applying a paste; removing the vehicle to solidify the glass in the J-th groove; and completely cutting the semiconductor member outside the first groove. Production method. K. Manufacturing the semiconductor device according to claim 3, including the step of forming at least a first region of a conductivity type different from that of the semiconductor member in the conductor member after forming the first groove. Method. 2. The semiconductor device according to claim 3 or 4, wherein the glass paste is partially made of a glass selected from the group consisting of lead-aluminum borosilicate glass and zinc borosilicate glass. Production method. 1. The method of manufacturing a semiconductor device according to claim 3 or 6, wherein the glass paste is partially made of zinc borosilicate glass. The method for manufacturing a semiconductor device according to any one of claims 3 to 1, wherein the de-glass paste comprises a vehicle partially composed of ethyl cellulose and butyl calpitol. IO, glass paste zinc borosilicate glass 1
Vehicle J! consisting of IOII and ethyl e-cellulose and butyl calpitol! roe. A method for manufacturing a semiconductor device according to any one of claims 3 to 7.