BE893700A - SEMICONDUCTOR DEVICES FOR HIGH POWER, PASSIVE WITH GLASS - Google Patents

SEMICONDUCTOR DEVICES FOR HIGH POWER, PASSIVE WITH GLASS

Info

Publication number
BE893700A
BE893700A BE0/208492A BE208492A BE893700A BE 893700 A BE893700 A BE 893700A BE 0/208492 A BE0/208492 A BE 0/208492A BE 208492 A BE208492 A BE 208492A BE 893700 A BE893700 A BE 893700A
Authority
BE
Belgium
Prior art keywords
passive
glass
semiconductor devices
high power
semiconductor
Prior art date
Application number
BE0/208492A
Other languages
French (fr)
Inventor
J A Ostop
R W Marks
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE893700A publication Critical patent/BE893700A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)
BE0/208492A 1981-06-29 1982-06-29 SEMICONDUCTOR DEVICES FOR HIGH POWER, PASSIVE WITH GLASS BE893700A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27851981A 1981-06-29 1981-06-29

Publications (1)

Publication Number Publication Date
BE893700A true BE893700A (en) 1982-12-29

Family

ID=23065290

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/208492A BE893700A (en) 1981-06-29 1982-06-29 SEMICONDUCTOR DEVICES FOR HIGH POWER, PASSIVE WITH GLASS

Country Status (5)

Country Link
JP (1) JPS589327A (en)
BE (1) BE893700A (en)
BR (1) BR8203630A (en)
DE (1) DE3224248A1 (en)
FR (1) FR2508706A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542166A1 (en) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh SEMICONDUCTOR COMPONENT
FR2631488B1 (en) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes PLANAR-TYPE INTEGRATED MICROWAVE CIRCUIT, COMPRISING AT LEAST ONE MESA COMPONENT, AND MANUFACTURING METHOD THEREOF
DE4114660C2 (en) * 1991-05-06 1997-09-18 Telefunken Microelectron Process for the production of glass passivated semiconductor components
JP7369158B2 (en) * 2021-03-31 2023-10-25 三菱重工業株式会社 Ammonia fuel boiler and ammonia supply system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
DE2633324C2 (en) * 1976-07-24 1983-09-15 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Process for the production of semiconductor components with high reverse voltage loading capacity
IN154896B (en) * 1980-07-10 1984-12-22 Westinghouse Electric Corp

Also Published As

Publication number Publication date
JPS589327A (en) 1983-01-19
DE3224248A1 (en) 1983-01-13
BR8203630A (en) 1983-06-14
FR2508706A1 (en) 1982-12-31

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19840629