JPS589321A - シリコン薄膜の製造法 - Google Patents

シリコン薄膜の製造法

Info

Publication number
JPS589321A
JPS589321A JP56105704A JP10570481A JPS589321A JP S589321 A JPS589321 A JP S589321A JP 56105704 A JP56105704 A JP 56105704A JP 10570481 A JP10570481 A JP 10570481A JP S589321 A JPS589321 A JP S589321A
Authority
JP
Japan
Prior art keywords
thin film
silicon thin
film substrate
manufacturing
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56105704A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376019B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazunobu Tanaka
田中　一宜
Akihisa Matsuda
彰久 松田
Toshihiko Yoshida
利彦 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tonen General Sekiyu KK
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Toa Nenryo Kogyyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Toa Nenryo Kogyyo KK filed Critical Agency of Industrial Science and Technology
Priority to JP56105704A priority Critical patent/JPS589321A/ja
Priority to US06/394,074 priority patent/US4490208A/en
Priority to EP82303526A priority patent/EP0069580B1/en
Priority to DE8282303526T priority patent/DE3276280D1/de
Publication of JPS589321A publication Critical patent/JPS589321A/ja
Priority to US06/790,781 priority patent/US4598304A/en
Publication of JPH0376019B2 publication Critical patent/JPH0376019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP56105704A 1981-07-08 1981-07-08 シリコン薄膜の製造法 Granted JPS589321A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56105704A JPS589321A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造法
US06/394,074 US4490208A (en) 1981-07-08 1982-07-01 Method of producing thin films of silicon
EP82303526A EP0069580B1 (en) 1981-07-08 1982-07-05 Method of producing thin films of silicon
DE8282303526T DE3276280D1 (en) 1981-07-08 1982-07-05 Method of producing thin films of silicon
US06/790,781 US4598304A (en) 1981-07-08 1985-10-23 Thin film devices of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105704A JPS589321A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造法

Publications (2)

Publication Number Publication Date
JPS589321A true JPS589321A (ja) 1983-01-19
JPH0376019B2 JPH0376019B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-04

Family

ID=14414741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105704A Granted JPS589321A (ja) 1981-07-08 1981-07-08 シリコン薄膜の製造法

Country Status (1)

Country Link
JP (1) JPS589321A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456170A (ja) * 1990-06-21 1992-02-24 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法
JP2011001102A (ja) * 2009-06-19 2011-01-06 Tomoku Co Ltd 包装箱

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151374A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151374A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456170A (ja) * 1990-06-21 1992-02-24 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法
JP2011001102A (ja) * 2009-06-19 2011-01-06 Tomoku Co Ltd 包装箱

Also Published As

Publication number Publication date
JPH0376019B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-04

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