JPS5892262A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5892262A
JPS5892262A JP56191239A JP19123981A JPS5892262A JP S5892262 A JPS5892262 A JP S5892262A JP 56191239 A JP56191239 A JP 56191239A JP 19123981 A JP19123981 A JP 19123981A JP S5892262 A JPS5892262 A JP S5892262A
Authority
JP
Japan
Prior art keywords
substrate
detection element
transistor
semiconductor device
sensing element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56191239A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322624B2 (enExample
Inventor
Kunihiro Tanigawa
谷川　邦広
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56191239A priority Critical patent/JPS5892262A/ja
Publication of JPS5892262A publication Critical patent/JPS5892262A/ja
Publication of JPS6322624B2 publication Critical patent/JPS6322624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56191239A 1981-11-27 1981-11-27 半導体装置 Granted JPS5892262A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191239A JPS5892262A (ja) 1981-11-27 1981-11-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191239A JPS5892262A (ja) 1981-11-27 1981-11-27 半導体装置

Publications (2)

Publication Number Publication Date
JPS5892262A true JPS5892262A (ja) 1983-06-01
JPS6322624B2 JPS6322624B2 (enExample) 1988-05-12

Family

ID=16271209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191239A Granted JPS5892262A (ja) 1981-11-27 1981-11-27 半導体装置

Country Status (1)

Country Link
JP (1) JPS5892262A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198858A (ja) * 1984-03-23 1985-10-08 Mitsubishi Electric Corp 固体撮像素子
JPS63299267A (ja) * 1987-05-29 1988-12-06 Fuji Photo Film Co Ltd 固体撮像素子
JPH02158176A (ja) * 1988-12-12 1990-06-18 Matsushita Electric Ind Co Ltd 放射線検出器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198858A (ja) * 1984-03-23 1985-10-08 Mitsubishi Electric Corp 固体撮像素子
JPS63299267A (ja) * 1987-05-29 1988-12-06 Fuji Photo Film Co Ltd 固体撮像素子
JPH02158176A (ja) * 1988-12-12 1990-06-18 Matsushita Electric Ind Co Ltd 放射線検出器

Also Published As

Publication number Publication date
JPS6322624B2 (enExample) 1988-05-12

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