JPS5892262A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5892262A JPS5892262A JP56191239A JP19123981A JPS5892262A JP S5892262 A JPS5892262 A JP S5892262A JP 56191239 A JP56191239 A JP 56191239A JP 19123981 A JP19123981 A JP 19123981A JP S5892262 A JPS5892262 A JP S5892262A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- detection element
- transistor
- semiconductor device
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 23
- 238000001514 detection method Methods 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000011159 matrix material Substances 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010924 continuous production Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明は半導体装置、特に赤外線検知装置の改良に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to improvements in semiconductor devices, particularly infrared detection devices.
（２）技術の背景
インジウムアンチモン（Ｉｎ８ｂ）のような赤外線に高
感度な化合物半導体材料を用いて赤外線検知素子をアレ
イ状に配設し、該検知素子で得られた信号をシリコン（
ｓｉ）基板を用いて形成した電荷結合装置（ＣＯＤ）に
よシ外部に転送する半導体装置はすでに周知である。(2) Background of the technology Infrared sensing elements are arranged in an array using a compound semiconductor material that is highly sensitive to infrared rays, such as indium antimony (In8b), and the signals obtained by the sensing elements are transmitted using silicon (
si) Semiconductor devices in which data is transferred to the outside by a charge-coupled device (COD) formed using a substrate are already well known.
（８）従来技術と間層点
このような半導体装置の従来の構造を第１図に示す０図
示するようＫ例えば赤外線に高感度なＩ ｎ ８ ｂ
ｏ７ｉ板１上に所定のパターンでｒ型の不純物が導入さ
れＰＮ接合が形成されて赤外線検知素子が多数形成され
ている。一方Ｎ型の８１基板２にはＣＯＤが形成され、
該ＣＯＤの入力ダイオードのＰ型領埴８とＩｎ８ｂ基板
ｌに形成され九Ｆ−Ｎ接合部のＰ型領埴４とｆＸｔ＊の
金属柱６を周込て結合されている。ここで６はＣＯＤの
電荷を転送する転送電極である。(8) Interlayer point between conventional technology and the conventional structure of such a semiconductor device is shown in FIG. 1. As shown in FIG.
R-type impurities are introduced into the o7i plate 1 in a predetermined pattern to form PN junctions, thereby forming a large number of infrared sensing elements. On the other hand, COD is formed on the N-type 81 substrate 2,
The P-type region 8 of the input diode of the COD is formed on the In8b substrate 1, and is coupled to the P-type region 4 of the nine F-N junction by surrounding the metal pillar 6 of fXt*. Here, 6 is a transfer electrode that transfers the charge of the COD.
つｔｅこのようにして赤外線を検知する検出部は１．赤
外線に高感度を有する化合物半導体基板で形成し、一方
該検出部で得られた検知信号を外部回路に送出するＣＣ
ＤはＩ Ｃ＋Ｌ８Ｉ等の半導体装置を製造する安定した
工程を用いて８ｉ１＆板上に形成し、このようにして得
られた赤外線検知素子とＣＯＤとをＩｎの金属柱を用い
て接続することで半導体装置を得ていた。The detection section that detects infrared rays in this way is 1. A CC formed of a compound semiconductor substrate with high sensitivity to infrared rays, and transmits a detection signal obtained by the detection section to an external circuit.
D is formed on the 8i1& board using a stable process for manufacturing semiconductor devices such as I I had gotten the equipment.
しかしこのような構造の半導体装置はＩｎ金属柱で８１
基板とＩｒｘＢｂｌ＆板とを接続しているので接続箇所
が剥れやすくまたＩｎ金属柱を所定のパターンに形成す
る工程が必要である等欠点が多かった。However, a semiconductor device with such a structure is made of In metal pillars with 81
Since the substrate and the IrxBbl&plate are connected, there are many drawbacks such as the connection points are likely to peel off and a step of forming the In metal pillars in a predetermined pattern is required.
（４） 発明の目的
本発明は上述した欠点を除去し、前記赤外線を検知する
赤外線検知素子と該検知信号を転送するＣＯＤとが同一
基板に一貫した工程で形成され、的述した検知素子とＣ
ＣＤ間とを接続するためのＩｎ金属柱を必要としない構
造の半導体装置の提供を目的とするものである。(4) Object of the Invention The present invention eliminates the above-mentioned drawbacks, and the infrared sensing element that detects the infrared rays and the COD that transfers the detection signal are formed on the same substrate in a consistent process, and the above-mentioned sensing element and COD are formed in a consistent process. C
The object of the present invention is to provide a semiconductor device having a structure that does not require an In metal pillar for connecting between CDs.
（５） 発明の構成
かかる目的を達成するための本発明の半導体装置は、化
合物半導体基板上に赤外線検知素子をマトリックス状に
形成してなる検知素子基板上に絶縁膜を介して薄膜トラ
ンジスタが前記検知素子に対応してマトリックス状に形
成され。(5) Structure of the Invention In order to achieve the above object, the semiconductor device of the present invention has a sensing element substrate in which infrared sensing elements are formed in a matrix on a compound semiconductor substrate, and a thin film transistor is disposed on the sensing element substrate via an insulating film. It is formed in a matrix shape corresponding to the elements.
該トランジスタとｉｌｌ紀検知素子とが電気的に接続さ
れ、かつ基板上に赤外線検知信号を読み出すための配線
が前記トランジスタと接続して一体的に形成されて込る
ことを特徴とする屯のである。更には前記検知素子基板
の上方には、薄膜トランジスタを用いた赤外線検知素子
の走査回路が一体的に設けられてｂることをも特徴とす
るものである。The transistor is electrically connected to the illumination detection element, and a wiring for reading an infrared detection signal is integrally formed on the substrate in connection with the transistor. . Furthermore, a scanning circuit for an infrared sensing element using a thin film transistor is integrally provided above the sensing element substrate.
（６）発明Ｏ！ｉＩｉ！施例
以下本発明の一実施例につき図面を用いて詳細に説明す
る。(6) Invention O! iIi! EXAMPLE Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第２図は本発明の半導体装置を模式的に示した図で、第
８図は第２図に示した半導体装置のｌ−に／Ｌ／１０１
の断面図で、第４図は本発明の半導体装置の他の実施例
を示す模式図である。FIG. 2 is a diagram schematically showing the semiconductor device of the present invention, and FIG. 8 is a diagram showing the semiconductor device shown in FIG.
FIG. 4 is a schematic diagram showing another embodiment of the semiconductor device of the present invention.
まず第２図および第８図に示すようにＮ型のＩ ｎ ８
ｂ Ｏｌ板１１ 上にハ８ ｉ０＊ ！ り ”ｌｋ
ｂ絶縁Ｗ４１２を介して前記１ｎ８ｂ基板１１にマト
リックス状に形成された赤外線検知素子ｌＯ２で得られ
た検知信号を読み出すためのＭＯＳ型の薄膜トランジス
タ１０Ｂが前記検知素子１０２に対応してマトリックス
状に形成されている。前記検知素子１０２はトランジス
タ１０８のソース領櫨１８と接続され、一方トランジス
タ１０Ｂのゲート電極１４は槓方崗に所定の間隔で基板
上に形成されたアルミニウム［極Ｙｊ−１、Ｙｊ 、Ｙ
ｊ＋、と接続され、またトランジスタのドレイン電［１
５は鍛方ｉ定の間隔で基板上に形成されているアルミニ
ウム電極”ｌ−１＋ ｘｉ ｍ ｘ農＋１とそれぞれ
接続され、これらアルミニウム電極Ｙｊ−１＋ Ｙｊ
＋ ”Ｊ＋１ ＊ ｘｌ−１ｅ ｘｌ ＋ Ｘ１４１に
よってマトリックス状のパターンを形成している。First, as shown in FIGS. 2 and 8, N-type I n 8
b Ol board 11 Ha8 i0*! ri”lk
MOS type thin film transistors 10B are formed in a matrix shape corresponding to the sensing elements 102 for reading out detection signals obtained from the infrared sensing elements 102 formed in a matrix shape on the 1n8b substrate 11 via the b insulation W412. ing. The sensing element 102 is connected to the source region 18 of the transistor 108, while the gate electrode 14 of the transistor 10B is connected to aluminum electrodes formed on the substrate at predetermined intervals.
j+, and the drain voltage of the transistor [1
5 are respectively connected to aluminum electrodes Yj-1+ Yj formed on the substrate at regular intervals, and these aluminum electrodes Yj-1+ Yj
+"J+1*xl-1e xl+X141 forms a matrix pattern.
次に該半導体装置の製造方法について第２図、第８図を
用いて述べる。Next, a method for manufacturing the semiconductor device will be described with reference to FIGS. 2 and 8.
まずＮ型Ｉｎ８ｂの化合物半導体基板１１には、所定の
パターンでｒ型の不純物Ｏベリリウム（Ｂｅ）’１１が
イオン注入されてＰ型領域１６が形成され、このように
してＰＮ接合ダイオード形式の多数の赤外線検知素子ｌ
Ｏ２のマトリックス配列を具えた検知素子基板が得られ
る。First, an r-type impurity O beryllium (Be)' 11 is ion-implanted into an N-type In8b compound semiconductor substrate 11 in a predetermined pattern to form a P-type region 16. infrared sensing element l
A sensing element substrate with a matrix array of O2 is obtained.
更に該検知素子基板上Ｋａ絶絶縁として二酸化ｙリコン
膜１２が化学蒸着（ｃｖｎ ）法によって形成されてい
る。Furthermore, a y-licon dioxide film 12 is formed as a Ka insulation on the sensing element substrate by a chemical vapor deposition (CVN) method.
一方該８ｉ０！膜１２上に薄膜トランジスタ１０８形成
用として７オスフイン（ＰＨｓ）を添加シタモノシフン
（８ｉＨ，） ガスのプラズマＣｖＤ法等によってＮ型
のアモルファス８１の結晶層が５〜２０μｍの厚さで形
成される。ここで該アモルファス８１の結晶の粒子を増
大せしめ良好な結晶とするために例えばイットリウムー
アμミニウムーガーネット（ＹＡＧ）をレーザ媒体とし
た固体レーザを用いてアモルファスｓｉ層をレーザアニ
−μしても良い。On the other hand, 8i0! A crystalline layer of N-type amorphous 81 is formed to a thickness of 5 to 20 μm on the film 12 by a plasma CVD method using a PHs gas to form a thin film transistor 108 . Here, in order to increase the grain size of the amorphous 81 crystal and make it a good crystal, for example, the amorphous Si layer may be laser annealed using a solid laser using yttrium-aluminium-garnet (YAG) as a laser medium. good.
次に該基板上にゲート酸化膜となる８ｉ０．膜が化学蒸
着法等によって形成され九後、前記Ｎ型のア壁μファス
８１膜へあとでＭ２Ｂ５の薄ン注入される。その後該グ
ーＦ酸化膜となる８１０ｍｍ１および不純物を添加した
アモルファス８１膜がデフズマエッチング法で所定のパ
ターンに形成される。第２図、第８図で１８はこのよう
にして形成された薄膜トランジスタのソース領域で、１
６はドレイン領域で１７はゲート酸化膜である。その後
Ｓ ｉＯｌ膜１２に下部のＩｎ８ｂ基板のＰ型領槍１６
と接続をとるための接続孔がホトリソグフフイ法、ブフ
ズマエッチング法等を用いて形成され、該基板上に接続
孔を介して上の薄膜トランジスタと接続をと番ための金
−クロム層（Ａｕ−Ｃｊｒ）１８とまたソーヌ領埴と繭
記赤外線検知素子のＰ型領域１６とを接続するためのム
ｌのソース電極用配線膜１９とゲート電極用配線膜２０
、ドレイン電極用配線ＷＩ２１を形成するためにＡＩ金
属膜が蒸着によって形成されたのち、所定のパターンに
ホＦリソグフフイ法、プフズマエッチング法で形成され
る。Next, a gate oxide film of 8i0. After the film is formed by chemical vapor deposition or the like, a thin M2B5 implant is later applied to the N-type awall .mu.fas 81 film. Thereafter, 810 mm1 of the Goo F oxide film and an amorphous 81 film doped with impurities are formed into a predetermined pattern by defusma etching. In FIGS. 2 and 8, 18 is the source region of the thin film transistor formed in this way;
6 is a drain region and 17 is a gate oxide film. After that, the P-type region 16 of the lower In8b substrate is applied to the SiOl film 12.
A contact hole for making a connection with the substrate is formed using a photolithography method, a Buchsma etching method, etc., and a gold-chromium layer (Au-Cjr) is formed on the substrate to make a connection with the upper thin film transistor through the contact hole. ) 18 and also a wiring film 19 for a source electrode and a wiring film 20 for a gate electrode for connecting the P-type region 16 of the Saone region and the Mayuki infrared sensing element.
After an AI metal film is formed by vapor deposition to form the drain electrode wiring WI21, it is formed into a predetermined pattern by a photolithography method or a Puchsma etching method.
このようにして半導体装置を形成すれば、赤外線検知素
子を形成したＩｎ８ｂの検知素子基板上に一貫して検知
素子からの信号を読み出すＭＯＳ型の薄膜トフンジスタ
が形成され、このようにすれば従来の半導体装置の構造
におけるようにＩｎ８ｂ基板に形成した赤外線検知素子
と８１基板上に形成したＣＯＤとをＩ−金属柱を用いて
接続するような複雑な構造をとらなくて済み、またＩｎ
８ｂの検知素子基板上に形成する薄膜トフンジスタはア
モルファスｓｉｌを利用して構成しているため従来のよ
うに単結晶の８１基板上に検知素子からの信号を読み出
すＣＣＤを形成する場合に比較してコストの低い半導体
装置が得られる。If a semiconductor device is formed in this way, a MOS type thin film transistor that consistently reads out signals from the sensing element will be formed on the In8b sensing element substrate on which the infrared sensing element is formed. Unlike the structure of a semiconductor device, there is no need for a complicated structure in which an infrared sensing element formed on an In8b substrate and a COD formed on an In81 substrate are connected using an I-metal pillar.
The thin film transistor formed on the sensing element substrate 8b is constructed using amorphous sil, so compared to the conventional case where a CCD for reading signals from the sensing element is formed on a single crystal 81 substrate. A low-cost semiconductor device can be obtained.
とこでこのような半導体装置の動作について述べる。ゲ
ート電極２０に連なる配線Ｔｊとドレイン領域１５に連
なる配線Ｘｉにそれぞれある一定電圧をあらかじめ印加
し、赤外線検知素子１０２をある一定電圧に充電する。Now, the operation of such a semiconductor device will be described. A certain constant voltage is applied in advance to each of the wiring Tj connected to the gate electrode 20 and the wiring Xi connected to the drain region 15, and the infrared sensing element 102 is charged to a certain constant voltage.
この状態の半導体装置に赤外光が入射されると、光励起
されたキャリアによって赤外線検知素子１０２に貯えら
れている電荷が放電される。信号を統み出すには、Ｘｉ
、Ｙｊ を再びアドレスして、赤外線検知素子１０２
を充電することによって、とのときに流れる充電電流が
光励起されたキャリアの量に比例することを利用して実
行され、この操作を逐次繰り返すことで像を撮像するこ
とができる。When infrared light is incident on the semiconductor device in this state, the charges stored in the infrared sensing element 102 are discharged by the photoexcited carriers. To control the signal, Xi
, Yj again, and the infrared sensing element 102
This is done by taking advantage of the fact that the charging current that flows when is proportional to the amount of photoexcited carriers, and images can be captured by sequentially repeating this operation.
以上述べた実施例の他に変形例として第８図に示すよう
にＩｎ８ｂの検知集子基板１１の上部に検知素子を垂直
に走査させる垂直走査回路８１せ
および水平に走査さする水平回路８食を前記したように
アモルファス８１をレーザプニールした材料を用いてＭ
ＯＳ型の薄膜トフンジスタで形成してもよいし、また特
に高速な動作を必要とすゐ水平走査回路のみを８１基板
上に形成して、前記したＩｎ８ｂ基板上に形成した赤外
線検知素子群とワイヤポンディングによって接続しても
良い。In addition to the above-mentioned embodiment, as a modified example, as shown in FIG. As mentioned above, M
It may be formed using an OS-type thin film transistor, or only the horizontal scanning circuit that requires particularly high-speed operation may be formed on the 81 substrate, and the infrared sensing elements and wires formed on the In8b substrate described above may be formed. They may be connected by bonding.
また前記したＭＯＳ型のゲート酸化膜を形成する方法と
して７０℃程度の低温で８１０！膜が形成されるイオン
ビームスパッタ法等を用いれば更に良質な８ｉ０１膜が
得られ良質なＭＯＢ！Ｉの薄膜Ｆヲンジスタが得られる
。また前記薄膜トランジスタ形成に用いたアモルファス
８１をＣｖｐ法によって形成したポリＶリコン膜を用い
てもよい。Further, as a method of forming the above-mentioned MOS type gate oxide film, a low temperature of about 70° C. is used to form the 810° C. If a film is formed using an ion beam sputtering method or the like, a higher quality 8i01 film can be obtained and a higher quality MOB! A thin film F resistor of I is obtained. Alternatively, a polyV silicon film formed by the Cvp method may be used instead of the amorphous film 81 used to form the thin film transistor.
（７）発明の効果
以上述べたように本発明の半導体装置の構造によれば検
知素子を形成するＩｎ５ｂＩ＆板上に一貫して該検知素
子の信号を検知、走査する回路が形成されるので形成さ
れる装置の信頼度も向上し、また前記検知素子の信号を
検知する装置がアモルファス８１を用いて形成されるの
で得られる装置も低コストのものとなる。(7) Effects of the Invention As described above, according to the structure of the semiconductor device of the present invention, a circuit that consistently detects and scans the signal of the sensing element is formed on the In5bI plate forming the sensing element. The reliability of the device is also improved, and since the device for detecting the signal from the detection element is formed using amorphous 81, the resulting device can also be made at low cost.
第１図社従来の半導体装置の構造を示す図、第２図およ
び第８図は本発明の半導体装置Ｏ−実施例の模式図およ
びその断面図、第４図は本発明の半導体装置０＊０＊施
例を示す模式図である。
図にオイて、１．１１ｔｉＮ型Ｉｎ８ｂ１＆板、２はＮ
型８ｉ基板、８．４．１６はＰ製鎖域、６はＩｎ金属柱
、６は転送電極、１２は旧０ｓ１１．１８はソース領域
、１４はゲート［４ｉ［，１５はドレイン電極、１７は
ゲート酸化膜、１８は金−Ｏｒ層、１９はソース電Ｗｉ
配線展、２０はゲート電ｇｉｉ！ｉ３線展、２１はドレ
イン電極配線膜、１０１はセｐ１１０２は赤外線検知素
子、１０８は薄膜トフンジヌタ、８１は重置走査回路、
８２は水平走査回路を示す。
第１図
第２図
第４ｆ２１Figure 1 is a diagram showing the structure of a conventional semiconductor device, Figures 2 and 8 are schematic diagrams and cross-sectional views of a semiconductor device O-embodiment of the present invention, and Figure 4 is a diagram showing the structure of a semiconductor device 0* of the present invention. It is a schematic diagram showing a 0* example. In the figure, 1.11tiN type In8b1 & plate, 2 is N
Type 8i substrate, 8.4.16 is P chain region, 6 is In metal column, 6 is transfer electrode, 12 is old 0s11.18 is source region, 14 is gate [4i[, 15 is drain electrode, 17 is Gate oxide film, 18 gold-Or layer, 19 source voltage Wi
Wiring exhibition, 20th is Gate Electric GII! i3 line drawing, 21 is a drain electrode wiring film, 101 is a sep1102 is an infrared detecting element, 108 is a thin film connector, 81 is a superposition scanning circuit,
82 indicates a horizontal scanning circuit. Figure 1 Figure 2 Figure 4f21
Claims (1)
リックス状に形成してなる検知素子基板上に絶縁膜を介
して検知素子からの信号を読み出す薄膜トランジスタが
前記検知素子に対応してマトリックス状に形成され、該
トランジスタと前記検知素子とが電電的に接続され、か
つ基板上に赤外線検知信号を読み出すための配線が前記
トランジスタと接続して一体的に形成されていることを
特徴とする半導体装置。 （２） 前記検知素子基板の上方には、薄膜トランジ
スタを用いた赤外線検知素子の走査回路が一体的に設け
られていることを特徴とする特許請求の範囲ＩＩ （１
）項に記載の半導体装置。 （８） 前ＩＥｌｌｌ膜トフンジスタがア七ｐツァス
シリコンまたはポリシリコンで形成されイいることを特
徴とする特許請求の範囲第（１）項および第（２）項に
記載の半導体装置。[Scope of Claims] (1) A thin film transistor for reading signals from the sensing elements via an insulating film is provided on a sensing element substrate formed by forming infrared sensing elements in a matrix on a compound semiconductor substrate, corresponding to the sensing elements. The transistor is formed in a matrix shape, the transistor and the detection element are electrically connected, and a wiring for reading an infrared detection signal is formed integrally with the transistor on the substrate. semiconductor device. (2) A scanning circuit for an infrared sensing element using a thin film transistor is integrally provided above the sensing element substrate.
) The semiconductor device described in item 1. (8) The semiconductor device according to claims (1) and (2), characterized in that the first IEll film transistor is formed of amorphous silicon or polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191239A JPS5892262A (en) | 1981-11-27 | 1981-11-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191239A JPS5892262A (en) | 1981-11-27 | 1981-11-27 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5892262A true JPS5892262A (en) | 1983-06-01 |
| JPS6322624B2 JPS6322624B2 (en) | 1988-05-12 |
Family
ID=16271209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56191239A Granted JPS5892262A (en) | 1981-11-27 | 1981-11-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5892262A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198858A (en) * | 1984-03-23 | 1985-10-08 | Mitsubishi Electric Corp | Solid-state image-pickup element |
| JPS63299267A (en) * | 1987-05-29 | 1988-12-06 | Fuji Photo Film Co Ltd | Solid-state image sensing element |
| JPH02158176A (en) * | 1988-12-12 | 1990-06-18 | Matsushita Electric Ind Co Ltd | Radiation detector |
-
1981
- 1981-11-27 JP JP56191239A patent/JPS5892262A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198858A (en) * | 1984-03-23 | 1985-10-08 | Mitsubishi Electric Corp | Solid-state image-pickup element |
| JPS63299267A (en) * | 1987-05-29 | 1988-12-06 | Fuji Photo Film Co Ltd | Solid-state image sensing element |
| JPH02158176A (en) * | 1988-12-12 | 1990-06-18 | Matsushita Electric Ind Co Ltd | Radiation detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6322624B2 (en) | 1988-05-12 |
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