JPS5890797A - Method of producing electronic part - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to conductors, resistors, insulators, etc. formed by patterning semiconductor devices, thin film thermal conductors, etc., and electronic components that combine these. , relates to a method for forming a planarized insulating film made of a polyimide-based polymer material.

In response to demands for miniaturization, faster response speed, and improved reliability of semiconductor devices, thin-film thermal heads, etc., and electronic components that combine these, efforts have been made to develop thin-film electronic components that apply thin-film technology to microelectronics. The attempt to do so is getting stronger.

Here, a method for forming a flattened insulating film using a polyimide-based polymer material or the like will be explained, taking as an example a multilayer wiring often used for forming these thin-film electronic components.

Conventional methods for forming this type of multilayer wiring are shown in Figures 1 and 2.
There was something shown in the figure.

FIG. 1 is a diagram showing an example of the structure of a matrix-type two-layer wiring, and FIG. 2 is a cross-sectional structural diagram of the two-layer wiring taken along the line ■--■ in FIG.

In the figure, (1) is single-layer wiring, (2) double-layer wiring 4 (3
) substrate, (4) is an insulating film, (5) is an insulating film between the eyebrows, (6)
indicates the short circuit part, and (7) indicates the i-1'r11j1 part.

First, a conventional method for forming multilayer wiring will be explained with reference to FIGS. 1 and 2.

Semiconductor devices, multi-layer heads, etc., and electronic components made of composites of these are mounted on conductive or insulating substrates (3) made of stainless steel, ceramics, glass, etc., as described above. 5i02 during the process or after forming each functional part.
After forming an insulating film (4) made of , or SiN, etc., and forming a single-no wiring made of, for example, AI or Au, an interlayer insulating film (5) made of a polyimide-based polymer material, etc. is provided. and then put AI or Au again on top of this.
By forming a two-layer wiring (2) consisting of the above components, a two-layer wiring structure such as noodles@goko parts was completed.

The conventional one has the above configuration, so -)
- Especially at the shoulder part of the pattern end of wiring (1),
Short circuit (6) or disconnection (7) tends to occur easily. In particular, when the film thickness increases due to the need for larger wiring (such as thermal capacity), the possibility of occurrence of short circuits, disconnections, etc. increases.Also, to prevent defects such as short circuits, disconnections, etc. When the film thickness of the interlayer insulating film (5) made of a polyimide-based polymer material is increased, the interlayer insulating film (5) formed by, for example, a photoetching method at the lead-out terminal part (not shown) of a single-layer wiring board is increased. It has various defects such as making etching and removal difficult, making it impossible to form fine patterns, etc., and making it impossible to obtain good multilayer wiring with a high degree of integration and no short circuits or disconnections. .

This invention was made in order to eliminate the drawbacks of the conventional method as described above, and it separates the interlayer insulating film into two 1- layers, and forms a flattened insulating film with the same height as the wiring in one layer. By forming an interlayer insulating film with a desired thickness as the second layer, semiconductor devices, thin film thermal heads, etc.
The present invention also aims to provide a method for manufacturing a multilayer wiring structure having a good flattened interlayer insulating film, which is necessary for electronic components etc. in which these are combined.

An embodiment of the present invention will be described below with reference to FIG. 8th
Figure 2 is a cross-sectional view of one embodiment of the present invention, and is a bottom structural view of the same portion as in Figure 2.

) (where (1) is -no wiring, (2) two-layer wiring,
(3) substrate, (4) insulating film, (8) planarizing insulating film,
(9) indicates an interlayer insulating film. Next, one embodiment of the present invention will be explained with reference to FIG.

Semiconductor devices, thin-film thermal heads, etc., and ST electronic components in which these functional parts are combined, are mounted on a four-dimensional or insulating substrate (3) made of, for example, stainless steel, ceramic, glass, etc. During the process of forming each of the functional parts described above, or after forming each functional part, for example, S
After providing an insulating film (4) made of iO□ or SiN, and forming a -1- wiring (1) made of, for example, AI or Au on top of the insulating film (4), a polyimide-based polymer material or the like is formed using, for example, a spinner method. etc., so that the film thickness is the same as that of the -1- wiring (1), and further wiring (
1) Remove the polyimide polymer material on the top by etching and form a flattened insulating film (
8).

Thereafter, a 11-layer insulating film (9) having a desired thickness is formed using, for example, a polyimide-based polymer material by a spinner method, and then a two-layer wiring (2) made of, for example, AI or Au is formed. In this way, the two-layer wiring structure of the thin film electronic component described above is completed.

The flattening insulating film used for multilayer wiring, etc. according to the present invention is constructed as described above, so that the flattening insulating film used for multilayer wiring, etc. according to the present invention has the structure described above. Even if there is no short circuit between wiring and 21- wiring, disconnection of 2-layer wiring, etc., and even if -1 wiring requires a large current capacity and this film thickness increases, the interlayer insulating film can be replaced with a flattening insulating film. Since it is configured separately with an interlayer insulating film,
The aforementioned short circuit and disconnection do not occur. In addition, there is no need to form the interlayer insulating film thicker than necessary to prevent short circuits and disconnections, as in conventional methods, and it is therefore possible to form fine patterns, allowing for a high degree of integration and short circuits. , a good multilayer wiring structure without disconnection can be obtained.

Furthermore, the flattened insulating film according to the present invention can be applied to multilayer wiring parts such as semiconductor devices, thin film thermal heads, etc., and electronic parts that combine these functional parts to achieve high integration and less short circuits and disconnections. It has the effect of getting something.

In the example described above, the case of two-layer wiring was explained as an example, but it can also be applied to a so-called multi-layer green structure, such as three-layer, four-layer to ten-layer, etc. Needless to say, the effect is even greater in this case.

[Brief explanation of drawings]

FIG. 1 is a plan view of a matrix type two-layer wiring for explaining the conventional method and the present invention, FIG. 2 is a cross-sectional structural diagram taken along the line ■-■ in FIG. 1 for explaining the conventional method, and FIG. The figure is a cross-sectional structural diagram for explaining the method of this invention, and shows the same part as FIG. 2. In the figure (11 is single-layer wiring, (2) is double-layer wiring, (3
) is the connecting plate, (4) is the insulating film, (5) is the conventional interlayer insulating film, (6) is the short circuit part, (7) is the disconnection part, (8) is the flattening insulating film, and (9) is the interlayer insulating film. It is an insulating film. For beef cattle, the same symbols mean the same or equivalent parts. Agent Shin Kuzuno - (1 other person)

Claims (1)

[Claims] (11 semi-thin body, d1 thin film thermal head, etc., and 4
When manufacturing electronic parts etc. that are a composite of 1 and 1, each of the above-mentioned formations of polyimide-based polymer materials, etc. After forming the film to approximately the same thickness as the film, the polyimide on each of the formed films is removed using a photoetching method or the like to form a re-modified polyimide-based molecular material, etc. as desired.
A method for manufacturing an electronic component, characterized in that a flattening insulating film made of a polyimide-based polymer material or the like is formed on the surface or top of each of the formed films. (2) A convenient method for producing an electronic component according to claim 1, wherein the flattening materials i and JIi are polyimide-based polymer materials.