JPS5886789A - 半導体レ−ザ・フオトデイテクタ光集積化素子 - Google Patents
半導体レ−ザ・フオトデイテクタ光集積化素子Info
- Publication number
- JPS5886789A JPS5886789A JP56184790A JP18479081A JPS5886789A JP S5886789 A JPS5886789 A JP S5886789A JP 56184790 A JP56184790 A JP 56184790A JP 18479081 A JP18479081 A JP 18479081A JP S5886789 A JPS5886789 A JP S5886789A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- photodetector
- laser
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56184790A JPS5886789A (ja) | 1981-11-18 | 1981-11-18 | 半導体レ−ザ・フオトデイテクタ光集積化素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56184790A JPS5886789A (ja) | 1981-11-18 | 1981-11-18 | 半導体レ−ザ・フオトデイテクタ光集積化素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5886789A true JPS5886789A (ja) | 1983-05-24 |
| JPS6320398B2 JPS6320398B2 (enrdf_load_stackoverflow) | 1988-04-27 |
Family
ID=16159333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56184790A Granted JPS5886789A (ja) | 1981-11-18 | 1981-11-18 | 半導体レ−ザ・フオトデイテクタ光集積化素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5886789A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948753A (en) * | 1984-03-27 | 1990-08-14 | Matsushita Electric Industrial Co., Ltd. | Method of producing stripe-structure semiconductor laser |
| US5075239A (en) * | 1989-03-30 | 1991-12-24 | Alcatel N.V. | Method of making monolithic integrated optoelectronic modules |
| US5086004A (en) * | 1988-03-14 | 1992-02-04 | Polaroid Corporation | Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer |
-
1981
- 1981-11-18 JP JP56184790A patent/JPS5886789A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948753A (en) * | 1984-03-27 | 1990-08-14 | Matsushita Electric Industrial Co., Ltd. | Method of producing stripe-structure semiconductor laser |
| US5086004A (en) * | 1988-03-14 | 1992-02-04 | Polaroid Corporation | Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer |
| US5075239A (en) * | 1989-03-30 | 1991-12-24 | Alcatel N.V. | Method of making monolithic integrated optoelectronic modules |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320398B2 (enrdf_load_stackoverflow) | 1988-04-27 |
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