JPS5883156U - Electrodes of semiconductor devices - Google Patents
Electrodes of semiconductor devicesInfo
- Publication number
- JPS5883156U JPS5883156U JP17686681U JP17686681U JPS5883156U JP S5883156 U JPS5883156 U JP S5883156U JP 17686681 U JP17686681 U JP 17686681U JP 17686681 U JP17686681 U JP 17686681U JP S5883156 U JPS5883156 U JP S5883156U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor devices
- electrode
- cathode electrode
- silicone rubber
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のサイリスタにおけるペレット状の半導体
素子にシリコンゴムが塗布され、余剰のシリコンゴムが
所定位置よりはみでた状態を示す縦断面図、第２図は本
考案の一実施例でサイリスタにおけるペレット状の半導
体素子にシリコンゴムが塗布された状態を示す縦断面図
である。
１・・・・・・カソード電極、１゛′・・・・・・ゲー
ト電極、２・・・・・・基板、３・・・・・・アノード
電極、４・・・・・・ろう材、５・・・・・・ベベル、
６・・・・・・シリコンゴム、７・・・・・・ケー′ト
取り出し線、８・・・・・・補助電極、９．９′・・・
・・・防止壁。Fig. 1 is a vertical cross-sectional view showing a conventional thyristor in which silicone rubber is applied to a pellet-shaped semiconductor element and excess silicone rubber protrudes from a predetermined position, and Fig. 2 is an embodiment of the present invention in a thyristor. FIG. 2 is a longitudinal cross-sectional view showing a pellet-shaped semiconductor element coated with silicone rubber. 1... Cathode electrode, 1''... Gate electrode, 2... Substrate, 3... Anode electrode, 4... Brazing metal , 5...Bevel,
6...Silicone rubber, 7...Cate take-out wire, 8...Auxiliary electrode, 9.9'...
...Prevention wall.
Claims (1)
し部を保護するために、シリコンゴムを塗布するサイリ
スタあるいはダイオニドなどの半導体素子において、カ
ソード電極表面の外周縁端部やゲート取り出し部を囲撓
する前記カッ−′ド電極表面の内周縁端部に、前記シリ
コンゴムが前記カソード電極表面に流出するのを防止す
る防止壁を設けることを特徴とする半導体装置の電極。In order to protect the beveled surface and the gate extraction part attached to the gate electrode, apply silicone rubber.In semiconductor devices such as thyristors or diions, the outer peripheral edge of the cathode electrode surface and the gate extraction part are surrounded. An electrode for a semiconductor device, characterized in that a prevention wall for preventing the silicone rubber from flowing out onto the surface of the cathode electrode is provided at the inner peripheral edge of the surface of the cathode electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17686681U JPS5883156U (en) | 1981-11-30 | 1981-11-30 | Electrodes of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17686681U JPS5883156U (en) | 1981-11-30 | 1981-11-30 | Electrodes of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5883156U true JPS5883156U (en) | 1983-06-06 |
Family
ID=29970218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17686681U Pending JPS5883156U (en) | 1981-11-30 | 1981-11-30 | Electrodes of semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5883156U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5220558B2 (en) * | 1974-06-24 | 1977-06-04 |
-
1981
- 1981-11-30 JP JP17686681U patent/JPS5883156U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5220558B2 (en) * | 1974-06-24 | 1977-06-04 |
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