JPS6127352U - shotgun barrier diode element - Google Patents

shotgun barrier diode element

Info

Publication number
JPS6127352U
JPS6127352U JP11232184U JP11232184U JPS6127352U JP S6127352 U JPS6127352 U JP S6127352U JP 11232184 U JP11232184 U JP 11232184U JP 11232184 U JP11232184 U JP 11232184U JP S6127352 U JPS6127352 U JP S6127352U
Authority
JP
Japan
Prior art keywords
diode element
barrier diode
shotgun
schottky barrier
abstract
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11232184U
Other languages
Japanese (ja)
Other versions
JP2526534Y2 (en
Inventor
正己 松村
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1984112321U priority Critical patent/JP2526534Y2/en
Publication of JPS6127352U publication Critical patent/JPS6127352U/en
Application granted granted Critical
Publication of JP2526534Y2 publication Critical patent/JP2526534Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例の断面図、第２図は従来のダ
イオード素子の断面図、第３図は第２図のダイオード素
子を樹脂封止した状態の平面図である。 １・・・・・・シリコン基板、−２・・・・・・酸化膜
、３・・・・・・バリア形成金属層、４，６・・・・・
・外部接続用金属電極層、５・・・・・・裏面金属電極
層、１０・・・・・・ダイオード素子、１１・・・・・
・ケース基板、１２．１３・・・・・・外部リード端子
、１４・・・・・・金属線、１５・・・・・・封止樹脂
。FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a sectional view of a conventional diode element, and FIG. 3 is a plan view of the diode element of FIG. 2 sealed with resin. 1... Silicon substrate, -2... Oxide film, 3... Barrier forming metal layer, 4, 6...
・Metal electrode layer for external connection, 5... Back metal electrode layer, 10... Diode element, 11...
- Case board, 12.13...External lead terminal, 14...Metal wire, 15...Sealing resin.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板上に設けられたショットキバリアを形成する
金属層の上に、外部接続をとるためのアルミニウム電極
層が直接または異種金属を介し設けられていることを特
徴とするショットキバリアダイオード素子。A Schottky barrier diode element characterized in that an aluminum electrode layer for external connection is provided directly or via a different metal on a metal layer forming a Schottky barrier provided on a semiconductor substrate.
JP1984112321U 1984-07-24 1984-07-24 Shot barrier diode device Expired - Lifetime JP2526534Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984112321U JP2526534Y2 (en) 1984-07-24 1984-07-24 Shot barrier diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984112321U JP2526534Y2 (en) 1984-07-24 1984-07-24 Shot barrier diode device

Publications (2)

Publication Number Publication Date
JPS6127352U true JPS6127352U (en) 1986-02-18
JP2526534Y2 JP2526534Y2 (en) 1997-02-19

Family

ID=30671383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984112321U Expired - Lifetime JP2526534Y2 (en) 1984-07-24 1984-07-24 Shot barrier diode device

Country Status (1)

Country Link
JP (1) JP2526534Y2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825482A (en) * 1971-08-04 1973-04-03
JPS50131463A (en) * 1974-04-02 1975-10-17
JPS57133683A (en) * 1981-02-12 1982-08-18 Nec Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825482A (en) * 1971-08-04 1973-04-03
JPS50131463A (en) * 1974-04-02 1975-10-17
JPS57133683A (en) * 1981-02-12 1982-08-18 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JP2526534Y2 (en) 1997-02-19

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