JPS5881437A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPS5881437A
JPS5881437A JP17972881A JP17972881A JPS5881437A JP S5881437 A JPS5881437 A JP S5881437A JP 17972881 A JP17972881 A JP 17972881A JP 17972881 A JP17972881 A JP 17972881A JP S5881437 A JPS5881437 A JP S5881437A
Authority
JP
Japan
Prior art keywords
gas
nozzle
replenishment
vapor phase
heating table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17972881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6221869B2 (enExample
Inventor
Hironori Inoue
洋典 井上
Takashi Aoyama
隆 青山
Takaya Suzuki
誉也 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17972881A priority Critical patent/JPS5881437A/ja
Publication of JPS5881437A publication Critical patent/JPS5881437A/ja
Publication of JPS6221869B2 publication Critical patent/JPS6221869B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP17972881A 1981-11-11 1981-11-11 気相成長装置 Granted JPS5881437A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17972881A JPS5881437A (ja) 1981-11-11 1981-11-11 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17972881A JPS5881437A (ja) 1981-11-11 1981-11-11 気相成長装置

Publications (2)

Publication Number Publication Date
JPS5881437A true JPS5881437A (ja) 1983-05-16
JPS6221869B2 JPS6221869B2 (enExample) 1987-05-14

Family

ID=16070825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17972881A Granted JPS5881437A (ja) 1981-11-11 1981-11-11 気相成長装置

Country Status (1)

Country Link
JP (1) JPS5881437A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348417B1 (en) 1998-04-03 2002-02-19 Nec Corporation Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
CN103540912A (zh) * 2012-07-09 2014-01-29 中晟光电设备（上海）有限公司 Mocvd设备及该设备中的托盘支撑旋转系统
CN106006647A (zh) * 2016-05-17 2016-10-12 山东瑞川硅业有限公司 三氯氢硅合成炉

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9127360B2 (en) 2009-10-05 2015-09-08 Applied Materials, Inc. Epitaxial chamber with cross flow

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834926U (enExample) * 1971-08-26 1973-04-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834926U (enExample) * 1971-08-26 1973-04-26

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348417B1 (en) 1998-04-03 2002-02-19 Nec Corporation Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
US6391116B2 (en) 1998-04-03 2002-05-21 Nec Corporation Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
CN103540912A (zh) * 2012-07-09 2014-01-29 中晟光电设备（上海）有限公司 Mocvd设备及该设备中的托盘支撑旋转系统
CN103540912B (zh) * 2012-07-09 2016-06-08 中晟光电设备（上海）股份有限公司 Mocvd设备及该设备中的托盘支撑旋转系统
CN106006647A (zh) * 2016-05-17 2016-10-12 山东瑞川硅业有限公司 三氯氢硅合成炉

Also Published As

Publication number Publication date
JPS6221869B2 (enExample) 1987-05-14

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