JPS5880252A - イオン注入装置 - Google Patents

イオン注入装置

Info

Publication number
JPS5880252A
JPS5880252A JP56178189A JP17818981A JPS5880252A JP S5880252 A JPS5880252 A JP S5880252A JP 56178189 A JP56178189 A JP 56178189A JP 17818981 A JP17818981 A JP 17818981A JP S5880252 A JPS5880252 A JP S5880252A
Authority
JP
Japan
Prior art keywords
current
ion beam
board
proportional
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56178189A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0234152B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masahiko Aoki
青木　正彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Original Assignee
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NISSHIN HAIBORUTEEJI KK, Nissin High Voltage Co Ltd filed Critical NISSHIN HAIBORUTEEJI KK
Priority to JP56178189A priority Critical patent/JPS5880252A/ja
Publication of JPS5880252A publication Critical patent/JPS5880252A/ja
Publication of JPH0234152B2 publication Critical patent/JPH0234152B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
JP56178189A 1981-11-05 1981-11-05 イオン注入装置 Granted JPS5880252A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56178189A JPS5880252A (ja) 1981-11-05 1981-11-05 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56178189A JPS5880252A (ja) 1981-11-05 1981-11-05 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS5880252A true JPS5880252A (ja) 1983-05-14
JPH0234152B2 JPH0234152B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-08-01

Family

ID=16044147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56178189A Granted JPS5880252A (ja) 1981-11-05 1981-11-05 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS5880252A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177848A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd イオン打込制御方法
JPS63953A (ja) * 1986-06-19 1988-01-05 Nissin Electric Co Ltd イオン照射装置
JPH01183049A (ja) * 1988-01-11 1989-07-20 Fujitsu Ltd イオン照射装置
EP0385710A3 (en) * 1989-02-28 1991-04-17 Eaton Corporation Wafer rotation control for an ion implanter
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160427A (en) * 1979-05-23 1980-12-13 Nova Ass Inc Beam machining apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160427A (en) * 1979-05-23 1980-12-13 Nova Ass Inc Beam machining apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177848A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd イオン打込制御方法
JPS63953A (ja) * 1986-06-19 1988-01-05 Nissin Electric Co Ltd イオン照射装置
JPH01183049A (ja) * 1988-01-11 1989-07-20 Fujitsu Ltd イオン照射装置
EP0385710A3 (en) * 1989-02-28 1991-04-17 Eaton Corporation Wafer rotation control for an ion implanter
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization

Also Published As

Publication number Publication date
JPH0234152B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-08-01

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