JPS5878418A - インジウム−アンチモン系複合結晶薄膜の製造法 - Google Patents

インジウム−アンチモン系複合結晶薄膜の製造法

Info

Publication number
JPS5878418A
JPS5878418A JP56177394A JP17739481A JPS5878418A JP S5878418 A JPS5878418 A JP S5878418A JP 56177394 A JP56177394 A JP 56177394A JP 17739481 A JP17739481 A JP 17739481A JP S5878418 A JPS5878418 A JP S5878418A
Authority
JP
Japan
Prior art keywords
substrate temperature
thin film
temperature rise
substrate
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56177394A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0247849B2 (env
Inventor
Keiji Kuboyama
久保山　啓治
Takeki Matsui
雄毅 松居
Takeo Kimura
武夫 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP56177394A priority Critical patent/JPS5878418A/ja
Priority to US06/361,939 priority patent/US4468415A/en
Priority to EP82102605A priority patent/EP0062818B2/en
Priority to AT82102605T priority patent/ATE20629T1/de
Priority to DE8282102605T priority patent/DE3271874D1/de
Priority to KR8201347A priority patent/KR860000161B1/ko
Publication of JPS5878418A publication Critical patent/JPS5878418A/ja
Priority to US06/620,645 priority patent/US4539178A/en
Publication of JPH0247849B2 publication Critical patent/JPH0247849B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
JP56177394A 1981-03-30 1981-11-05 インジウム−アンチモン系複合結晶薄膜の製造法 Granted JPS5878418A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56177394A JPS5878418A (ja) 1981-11-05 1981-11-05 インジウム−アンチモン系複合結晶薄膜の製造法
US06/361,939 US4468415A (en) 1981-03-30 1982-03-25 Indium-antimony complex crystal semiconductor and process for production thereof
EP82102605A EP0062818B2 (en) 1981-03-30 1982-03-27 Process of producing a hall element or magnetoresistive element comprising an indium-antimony complex crystal semiconductor
AT82102605T ATE20629T1 (de) 1981-03-30 1982-03-27 Indium-antimon-halbleiter mit komplexer kristalliner struktur und verfahren zu seiner herstellung.
DE8282102605T DE3271874D1 (en) 1981-03-30 1982-03-27 Indium-antimony complex crystal semiconductor and process for production thereof
KR8201347A KR860000161B1 (ko) 1981-03-30 1982-03-29 인듐 안티몬계 복합 결정반도체 및 그 제조방법
US06/620,645 US4539178A (en) 1981-03-30 1984-06-14 Indium-antimony complex crystal semiconductor and process for production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56177394A JPS5878418A (ja) 1981-11-05 1981-11-05 インジウム−アンチモン系複合結晶薄膜の製造法

Publications (2)

Publication Number Publication Date
JPS5878418A true JPS5878418A (ja) 1983-05-12
JPH0247849B2 JPH0247849B2 (env) 1990-10-23

Family

ID=16030160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56177394A Granted JPS5878418A (ja) 1981-03-30 1981-11-05 インジウム−アンチモン系複合結晶薄膜の製造法

Country Status (1)

Country Link
JP (1) JPS5878418A (env)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04323892A (ja) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd セラミック回路板における導体膜の形成方法
JPH04323891A (ja) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd セラミック回路板における導体膜の形成方法
JP2005167099A (ja) * 2003-12-04 2005-06-23 Shigeya Narizuka 半導体素子及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006070826A1 (ja) 2004-12-28 2008-08-07 旭化成エレクトロニクス株式会社 磁気方式回転角センサ、および、角度情報処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04323892A (ja) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd セラミック回路板における導体膜の形成方法
JPH04323891A (ja) * 1991-04-23 1992-11-13 Matsushita Electric Works Ltd セラミック回路板における導体膜の形成方法
JP2005167099A (ja) * 2003-12-04 2005-06-23 Shigeya Narizuka 半導体素子及びその製造方法

Also Published As

Publication number Publication date
JPH0247849B2 (env) 1990-10-23

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