JPS5877250A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5877250A
JPS5877250A JP17603981A JP17603981A JPS5877250A JP S5877250 A JPS5877250 A JP S5877250A JP 17603981 A JP17603981 A JP 17603981A JP 17603981 A JP17603981 A JP 17603981A JP S5877250 A JPS5877250 A JP S5877250A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
chip
high
resin
si
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17603981A
Inventor
Masahide Ozawa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Abstract

PURPOSE:To obtain a plastic sealed high integrated MOSIC having no soft error by a method wherein an Si chip is adhered on a pellet using polyimide resin as an adhesive. CONSTITUTION:An Si chip 7 is adhered on an insulating film 3 for protection of element using polyimide resin 6. By this constitution, the connecting parts of a pellet 1 and fine metal wires 5 are not covered with resin 6, the Si chip 7 contains no element to generate alpha rays, and because the chip having thickness of 100mum or more can be obtained easily, it has the sufficiently screening effect to alpha rays of high energy, and a high reliable plastic sealed MOSIC can be obtained.
JP17603981A 1981-11-02 1981-11-02 Semiconductor device Pending JPS5877250A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17603981A JPS5877250A (en) 1981-11-02 1981-11-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17603981A JPS5877250A (en) 1981-11-02 1981-11-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5877250A true true JPS5877250A (en) 1983-05-10

Family

ID=16006646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17603981A Pending JPS5877250A (en) 1981-11-02 1981-11-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5877250A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826297A (en) * 1985-12-25 1989-05-02 Hitachi, Ltd. Liquid crystal display device having an extention metal film wiring which is covered by polyimide layer having low viscosity under 1.0 poise before curing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826297A (en) * 1985-12-25 1989-05-02 Hitachi, Ltd. Liquid crystal display device having an extention metal film wiring which is covered by polyimide layer having low viscosity under 1.0 poise before curing

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