JP2003332494A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can eliminate such problems as a reduction in workability, an increase in cost, or the like, caused by two-step resin sealing including underfill sealing and overcoat sealing. <P>SOLUTION: The resin sealing seals a surface of a semiconductor chip and a space between the semiconductor chip and an interposer using a single liquid resin as a sealing resin. First, the resin is coated collectively at a time under the atmospheric pressure by a printing method, a potting method, or the like. Then, voids entrained during the coating process and voids confined in the space between the semiconductor chip and the interposer are removed under a negative pressure. Thereafter, the resin is hardened at a high temperature. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to miniaturization, thinning,
The present invention relates to a method for manufacturing a semiconductor device such as a semiconductor integrated circuit, which meets the demand for weight reduction and price reduction.

[0002]

2. Description of the Related Art FIGS. 7 and 8 show a conventional semiconductor device. FIG. 7 is a cross-sectional view of a semiconductor device having a structure in which a semiconductor chip is mounted on a generally widely used lead frame and is resin-sealed. The semiconductor chip 1 is first die-bonded to the lead frame 12, and the bonding pad formed on the semiconductor chip 1 and each lead of the lead frame 12 are wire-bonded with a gold wire 13 and then sealed with a resin 6. . The semiconductor device having such a structure is
Since the wire bonding area is required, it has been an obstacle to downsizing, thinning and weight reduction.

A semiconductor device as shown in FIG. 8 is one that has been made smaller, thinner, and lighter. This is a semiconductor chip 1 which is connected to an interposer 3 such as a ceramic substrate, an organic material substrate, or a film tape by bumps 2 and resin-sealed. Since the bump connection is performed, the wire bonding area is unnecessary, and the semiconductor device can be downsized.

In the semiconductor device having such a structure, the circuit wiring (not shown) formed on the interposer 3 and the bump electrode 2 are faced down with the surface on which the bump electrode 2 is formed on the surface electrode of the semiconductor chip 1 facing downward. After connecting, resin is sealed.
Here, the resin sealing is performed in two steps including an underfill sealing step and an overcoat sealing step as described below.

In the resin encapsulation process, first, in order to avoid the adverse effect of distortion due to the difference in thermal expansion between the semiconductor chip 1 and the interposer 3, an underfill resin 6A is filled using a dispenser or the like, and the underfill resin 6A is filled. Seal.
Here, as the underfill resin, an underfill resin containing a fine filler such as silica is used in order to allow it to enter a narrow gap. Next, in order to prevent damage to the surface of the semiconductor chip due to external force, exposure to light, and the like, the entire semiconductor chip is sealed with the overcoat resin 6B.

[0006]

In the conventional method of manufacturing a semiconductor device shown in FIG. 8, a capillarity phenomenon is used when performing underfill encapsulation, so that resin is applied along the edge of each semiconductor chip. Since it is necessary to apply the coating solution, and it is not possible to narrow the chip spacing in order to secure the space through which the needles pass, the number of chips taken per interposer is small, and the cost of the semiconductor device is high. Furthermore, since two steps of underfill encapsulation and overcoat encapsulation are required, the resin encapsulation step is lengthened and the manufacturing cost is increased.

As described above, the two-step resin encapsulation has disadvantages in terms of man-hours and materials, and high cost is inevitable. The present invention solves the above problems and provides a method of manufacturing a semiconductor device capable of cost reduction.

[0008]

In order to achieve the above object, the invention according to claim 1 provides a plurality of semiconductor chips on an interposer via metal projection electrodes formed on one main surface of the semiconductor chips. A first step of connecting to each of the circuit wirings provided, a liquid resin is filled in the surface of the semiconductor chip connected on the interposer and a gap between the semiconductor chip and the interposer, and after defoaming, heat treatment is performed. And a step of curing the resin to collectively seal the plurality of semiconductor chips on the interposer, and a third step of cutting the interposer and the sealing resin to separate them into individual semiconductor devices. It is characterized by that.

The invention according to claim 2 is the invention according to claim 1, characterized in that the liquid resin has a viscosity at 25 ° C. of 10 to 200 Pa · s.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION An interposer 3 (dimensions: 59 × 91 ×) of one embodiment of the manufacturing method of the present invention will be described below.
A large number of semiconductor chips 1 (dimension: 0.8)
× 0.8 × 0.2 mm) to connect to manufacture a large number of semiconductor devices (dimensions: 1.0 × 1.0 × 0.6 mm), and FIGS. The steps will be described in order.

First, the semiconductor chips 1 having the bumps 2 (metal projection electrodes) provided on the active surface are arranged on the interposer 3 at predetermined intervals, and circuit wiring (not shown) on the bumps and the corresponding interposer 3 is arranged. And (Fig. 1).
Here, the dimension between the semiconductor chip and the adjacent semiconductor chip is determined by the cutting margin 4 of the dicing performed after the resin sealing.
It is set to a value obtained by adding a dimension twice the resin distance 5 (corresponding to the resin thickness of the semiconductor device) from the semiconductor chip 1 to the cutting margin 4. The gap between the interposer 3 and the active surface of the semiconductor chip 1 is set to 5 μm or more.

Specifically, the cutting margin 4 is 165 as in the conventional case.
The resin distance 5 was set to 350 μm in the related art, but was set to 100 μm in this embodiment. This is because the manufacturing method of the present invention does not require underfill sealing performed by using a needle of a dispenser or the like, so that the semiconductor chip interval can be set narrow.

Next, the interposer 3 and the semiconductor chip 1
The gap between and the entire surface of the semiconductor chip 1 is sealed with resin 6 (FIG. 2). Here, for sealing, a particle size of 1 as a filler is used.
A one-liquid solvent-free liquid resin containing silica having a particle diameter of ˜20 μm and an average particle diameter of 4 μm and having a viscosity of 100 Pa · s at 25 ° C. was used. After the resin is applied to the upper part of the chip by the printing method under the atmospheric pressure, defoaming is performed for 20 minutes under the reduced pressure of 665 Pa or less, and the air bubbles and the interposer 3 caught during the resin application
The air bubbles trapped in the gap between the semiconductor chip 1 and the semiconductor chip 1 are removed, and the resin is caused to flow into the gap.

Next, heat treatment is performed at 100 ° C. for 1 hour and 150 ° C. for 2 hours to cure the resin. The resin application method may be a potting method using a dispenser.

Thereafter, the sealing resin surface is marked by a printing method or a laser method to give a mark 7 (FIG. 3). Next, the dicing tape 8 is attached to the sealing resin surface, and the dicing blade 9 is used to perform dicing from the interposer 3 side (FIG. 4). In this embodiment, size 59
22 x 16 from the 91mm interposer
As a block, 8 blocks, that is, 2816 semiconductor devices in total are obtained.

An electrical test in the next step is conducted with the individual semiconductor devices attached to the tape 8 (FIG. 5).
The electrical test is performed using the test probe 10, but it is also possible to test a large number at the same time. Next, the appearance is inspected and stored in the packing material 11 (FIG. 6).

The above is the outline of one embodiment of the present invention.
According to the present invention, the entire liquid is sealed with a single liquid resin without special underfill sealing, which has an advantage that the resin sealing process can be shortened.

Further, in the above-described embodiment, the resin distance 5 can be reduced from 350 μm of the conventional type to 100 μm, and the semiconductor device can be downsized from 1.5 mm □ of the conventional product to 1.0 mm □. .

In the examples, a liquid resin having a viscosity of 100 Pa · s at 25 ° C. was used as the resin.
Liquid resins having a viscosity of 200 Pa · s or less and 10 Pa · s or more can be used in the same manner. Further, even when a liquid resin having these viscosities is used, the resin can be made to flow into the gap by using a resin containing a filler having a particle size that enters the gap between the interposer and the semiconductor chip. The particle size of the filler may be appropriately selected depending on the size of the gap between the interposer 3 and the active surface of the semiconductor chip 1.

[0020]

As described above, in the manufacturing method of the present invention, in the step of resin sealing, the semiconductor chip surface and the gap between the semiconductor chip and the interposer are sealed with a single liquid resin. Therefore, the resin sealing process can be shortened. Also, since it is not necessary to use a dispenser needle to fill the underfill,
The semiconductor chip interval can be narrowed, and the manufacturing cost can be reduced by downsizing the semiconductor device and increasing the number of semiconductor devices to be taken.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of an embodiment of the present invention.

FIG. 2 is an explanatory diagram of an embodiment of the present invention.

FIG. 3 is an explanatory diagram of an embodiment of the present invention.

FIG. 4 is an explanatory diagram of an example of the present invention.

FIG. 5 is an explanatory diagram of an example of the present invention.

FIG. 6 is an explanatory diagram of an example of the present invention.

FIG. 7 is an explanatory diagram of a conventional semiconductor device.

FIG. 8 is an explanatory diagram of another conventional semiconductor device.

[Explanation of symbols]

1: semiconductor chip, 2: bump, 3: interposer,
4: Cutting margin, 5: Resin distance, 6: Resin, 6A: Underfill resin, 6B: Overcoat resin, 7: Mark, 8: Dicing tape, 9: Dicing blade,
10: test probe, 11: packing material, 12: lead frame, 13: gold wire.

Claims (2)

[Claims] 1. A first step of connecting a plurality of semiconductor chips to a circuit wiring provided on an interposer via metal projection electrodes formed on one main surface of the semiconductor chip, and connecting on the interposer. The surface of the semiconductor chip and the gap between the semiconductor chip and the interposer are filled with a liquid resin, and after defoaming, heat treatment is performed to cure the resin, and the plurality of semiconductor chips are collectively sealed on the interposer. And a third step of cutting the interposer and the sealing resin into individual semiconductor devices. 2. The liquid resin has a viscosity of 1 at 25 ° C.
The method for manufacturing a semiconductor device according to claim 1, wherein the method is 0 to 200 Pa · s.