JPS5874062A - Manufacture of resin mold type semiconductor device - Google Patents

Manufacture of resin mold type semiconductor device

Info

Publication number
JPS5874062A
JPS5874062A JP16388582A JP16388582A JPS5874062A JP S5874062 A JPS5874062 A JP S5874062A JP 16388582 A JP16388582 A JP 16388582A JP 16388582 A JP16388582 A JP 16388582A JP S5874062 A JPS5874062 A JP S5874062A
Authority
JP
Japan
Prior art keywords
leads
resin
frame
reinforcement
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16388582A
Other languages
Japanese (ja)
Inventor
Sumio Nagase
長瀬 寿美雄
Hideo Kano
鹿野 英男
Tsuneichi Odaka
小高 庸市
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16388582A priority Critical patent/JPS5874062A/en
Publication of JPS5874062A publication Critical patent/JPS5874062A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To greatly shorten the testing time for a molded semiconductor device, by forming simultaneously the reinforcement of the resin material among the resin parts molded via leads. CONSTITUTION:When forming a resin mold type transistor 3 integrated into a frame 2 via leads 1, the reinforcement parts 7 or 8 of the resin material are simultaneously formed on the back surface of the resin materials 4a-4c or the head part in an integral body. In this constitution, even when the lead frame 5 for reinforcement is removed, collector leads 1a and base leads 1c are separated from the frame 2, and individual devices are supported only by emitter leads 1b, the position is stabilized against the external force because of the presence of reinforcement parts 7, 8. Therefore, a test is performed by contacting probes 6 respectively on leads 1a, 1b and the reinforcement part 7 or 8 is removed after the test. In this constitution, a test can be performed more rapid than the case using a parts feeder.

Description

【発明の詳細な説明】 本発明はレジ/モールド型半導体装置の製造方法に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a register/mold type semiconductor device.

レジンモールド製半導体装置特に小信号用のレジンモー
ルド型トランジスタの製造は、まず、フレームから一体
に3本を1組にした複数組(実際には約25組)のリー
ドが突出した構成からなるリードフレームを用意し、各
組のリードのうち真中にあるリードの先端部にトランジ
スタペレットをそれぞれろ5接する。そして前記トラン
ジスタペレットに形成された2個の電極を両脇に配置さ
nたリードの先端部にそれぞれワイヤを介して接続(ワ
イヤボンディング)する。その後このワイヤおよび前記
トランジスタペレットを外的傷害よ°り防止するためま
た耐湿性を良好にするために。
Resin-molded semiconductor devices In particular, the manufacturing of resin-molded transistors for small signals begins with leads consisting of multiple sets of three leads (actually about 25 sets) protruding from the frame. A frame is prepared, and five transistor pellets are attached to the tips of the leads in the middle of each set of leads. Then, the two electrodes formed on the transistor pellet are connected to the tips of the leads arranged on both sides via wires (wire bonding). Thereafter, to protect the wire and the transistor pellet from external damage and to provide good moisture resistance.

前記トランジスタペレットおよびワイヤをリードの先端
部ごとレジン材でそれぞれモールドする。
The transistor pellet and the wire are each molded with a resin material along with the tip of the lead.

その後は前記フレームをリードから打ち抜きにより切り
離し1個々のレジンモールド型トランジスタを得るので
ある。
Thereafter, the frame is separated from the leads by punching to obtain individual resin-molded transistors.

さて、このように製造が完了したレジンモールド型トラ
ンジスタは必ず電気的特性の検査を経て市販されるので
あるが、従来この電気的特性の検査においてはパーツフ
ィーダと称される装置が用いられている。つまりこの装
置は前記トランジスタを多数個収容し得る収容部と、こ
の収容部に連続され前記収容部内に納められたトランジ
スタを振動させながら順次導き出す送路と、この送路先
端にとり付けられ前記トランジスタを所定の検査装置ま
で導びき送るための弧状のシュートとからなるものであ
る(詳細は雑誌〔精密機械〕精器学会専門委員会197
3年4月号m)69〜72参照χ前記フレームから個々
のトランジスタを分離した後、これらトランジスタを前
記パーツフィーダの収容部に納めれば、自動的に特性検
査が行なわれ良品、不良品が選り分けられるのである。
Now, resin-molded transistors that have been manufactured in this way are always tested for their electrical characteristics before being sold on the market, and conventionally a device called a parts feeder is used to test these electrical characteristics. . In other words, this device includes a housing part that can accommodate a large number of the transistors, a feeding path that is continuous with the housing part and sequentially leads out the transistors housed in the housing part while vibrating, and a feeding path that is attached to the tip of the feeding path and carries the transistors. It consists of an arc-shaped chute for guiding and feeding the equipment to a designated inspection device (for details, see the magazine [Precision Machinery] Technical Committee of the Japan Society of Precision Machinery 197).
See April 3rd issue m) 69-72 χ After separating the individual transistors from the frame, if these transistors are placed in the housing section of the parts feeder, the characteristics will be automatically inspected to identify good and defective products. They can be sorted out.

しかしながらこのような特性検査方法においては、バラ
バラにしたトランジスタを一定方向に姿勢を揃える為の
装置(パーツフィーダ)が必要であり、また個々のトラ
ンジスタを送るためシュート部でのツマリ等が多発して
機械稼動率が悪く検11  ・:: 査時間が長いことなどの欠点を有していた。実際トラン
ジスタの特性検査は数種類性なわnるためにパーツフィ
ーダを数個直列に配置しておいて行なうために前述した
欠点が相和的に生じてくるものである。
However, in this characteristic testing method, a device (parts feeder) is required to align the separated transistors in a certain direction, and since each transistor is fed, the chute often gets jammed. It had disadvantages such as poor machine operation rate and long inspection time. In reality, the characteristics of transistors are tested in several different ways, so several parts feeders are arranged in series and the above-mentioned drawbacks occur in combination.

それ故に本発明の目的はこnらの欠点を除いたもので、
高価な装置を用いず、また検査時戸を短縮できるレジン
モールド型トランジスタの製造方法を提供するものであ
る。
It is therefore an object of the present invention to eliminate these drawbacks and to
The present invention provides a method for manufacturing a resin-molded transistor, which does not require expensive equipment and can shorten the time required for inspection.

以下実施例を用いて説明する。This will be explained below using examples.

第1°図(alないしくC)は本発明を適用するレジン
モールド型トランジスタの製造方法の一実施例を示す工
程説明図である。 ゛ 第1図1a)  リードlを介してフレーム2と一体に
なっている複数個(実際には約25個ある)のレジンモ
ールド型トランジスタ3を゛用意する。モールドされた
レジン材4a、4b、・旧・・46には前述したようK
それぞれ真中のリード上にろう接さnたトランジスタペ
レットと、このトランジスタペレッ)K形成さnた2個
の電極と両脇に配置されてるリードとそ:′れぞれ接続
さnたワイヤとが内包されている。ここで真中のリード
はコレクタリード11.その両脇のリードはエミッタリ
ードlb、ペースリード1cとなる。こnは他のトラン
ジスタでも同様の配列で決定されている。なお前記フレ
ーム2と平行にかつリードlと一体に形成されているフ
レーム5はリードlを補強するためのフレームである。
FIGS. 1A to 1C are explanatory process diagrams showing one embodiment of a method for manufacturing a resin molded transistor to which the present invention is applied. (FIG. 1 1a) A plurality of (actually about 25) resin molded transistors 3 are prepared which are integrated with the frame 2 via leads 1. The molded resin materials 4a, 4b, old...46 have K as mentioned above.
A transistor pellet is soldered to the lead in the middle, two electrodes are formed on the transistor pellet, and wires are connected to the leads placed on both sides. Contained. Here, the middle lead is collector lead 11. The leads on either side of it are emitter lead lb and pace lead 1c. This n is determined in a similar arrangement for other transistors as well. A frame 5, which is formed parallel to the frame 2 and integrally with the lead l, is a frame for reinforcing the lead l.

図面1b)  その後、打ち抜きでフレーム5をとり除
きまた各々トランジスタのコレクタリードlaとベース
リード1cをフレーム2より分離させる。
(Drawing 1b) Thereafter, the frame 5 is removed by punching, and the collector lead la and base lead 1c of each transistor are separated from the frame 2.

図面10)  検査装置の一端極を前記フレーム2に接
続し、他端極なプローブ6を介してコレクタリ−)”1
8に接続する。このときプローブ6はフレーム2に一体
にとり付けられている各レジンモールド型トランジスタ
のコレクタリード1a、ベースリードICE複数個あて
がい、各々のトランジスタについて検査を行なう、そし
て不良品は例えばコンビ2−夕等で記憶させ、後工程で
マーキングさnる。この測定では各トランジスタはエミ
ッタリードlbが共通罠なっているためにIc1.oが
測定できないため” CIOとはぼ値が等しいIc+c
sを測定することによりそnに変えている。
Drawing 10) One terminal of the inspection device is connected to the frame 2, and the collector is connected via the probe 6 of the other terminal.
Connect to 8. At this time, the probe 6 is applied to the collector lead 1a and multiple base leads ICE of each resin molded transistor integrally attached to the frame 2, and inspects each transistor. It is memorized and marked in a later process. In this measurement, since the emitter lead lb of each transistor is a common trap, Ic1. Because o cannot be measured, CIO has the same value as Ic + c.
By measuring s, it is changed to n.

このよう圧すnば1個々のトランジスタをフレームより
分離せずプローブを接触するだけで電気的特性検査をす
ることができる。したがってパーツフィーダを用いるこ
とがないので安価に検査ができる。
In this way, the electrical characteristics of each transistor can be inspected simply by touching it with a probe without having to separate each transistor from the frame. Therefore, since a parts feeder is not used, inspection can be performed at low cost.

またパーツフィーダを用いた場合のように振動により個
々のトランジスタを検査装置に送ることはなく、複数個
のトランジスタをフレームごとスムーズに送ることがで
き、しかも複数個のトランジスタを一度に検査可能なた
め検査時間を短か(できる。しかし、このような方法に
おいても個々のトランジスタはエミッタリードlbによ
ってフレーム2に支持されているのみである。したがっ
て外力によって位置安定が定まらないために、第2図お
よび第3図で示すようにモールドされたレジン材4a〜
4C部にレジン材で補強部を形成する。つまり第2図に
おいてはレジン材4a〜4eの裏面にこれらと一体にし
て補強レジン膜7をモールドの際同時に形成しておくも
のであり、第3図においてはレジ/材4a〜4eの頭部
にこれらと一体にして補強レジン棒8をやはりモールド
の際同時に形成するものである。そして特性検査終了後
は打ち抜き等でこれらを取り除けばよい。
In addition, unlike when using a parts feeder, individual transistors are not sent to the inspection equipment due to vibration, but multiple transistors can be sent smoothly in their entire frame, and multiple transistors can be inspected at once. It is possible to shorten the inspection time. However, even in such a method, each individual transistor is only supported by the frame 2 by the emitter lead lb. Therefore, the positional stability cannot be determined by external force, so the method shown in Fig. 2 and As shown in FIG. 3, molded resin material 4a~
A reinforcing part is formed at the 4C part using a resin material. In other words, in FIG. 2, the reinforcing resin film 7 is formed on the back surfaces of the resin materials 4a to 4e at the same time as they are integrally molded, and in FIG. A reinforcing resin rod 8 is formed integrally with these at the same time during molding. After the characteristic test is completed, these may be removed by punching or the like.

本実施例における検査方法では一フレームに形成された
トランジスタの特性を複数組のプローブで一度に検査を
しているが、これに限らず各トランジスタごとに検査を
行なってもよい。この場合においてもパーツフィーダを
用いた場合よりも検査が迅速にできることはいうまでも
ない。
In the testing method in this embodiment, the characteristics of transistors formed in one frame are tested at once using a plurality of sets of probes, but the invention is not limited to this, and testing may be performed for each transistor. Needless to say, even in this case, inspection can be performed more quickly than when using a parts feeder.

さらに本実施例では各々トランジスタのエミッタリード
lbのみをフレームと一体にした状態で検査をしている
が、エミッタリードlbに限らずコレクタリ〒ドlaあ
るいはペースリードlCの場合においてもよい。
Further, in this embodiment, only the emitter lead lb of each transistor is tested while being integrated with the frame, but it is not limited to the emitter lead lb, but may be the collector lead la or the pace lead lc.

本実施例では一例として1C1il (’CI。)の測
定のみを掲げたが、1’、l、I   またvc!、。
In this example, only the measurement of 1C1il ('CI.) is given as an example, but 1', l, I and vc! ,.

。 ClC0l     1tlO vc、。等も同様にして測定できるものである。. ClC0l 1tlO vc,. etc. can be measured in the same way.

以上述べたように本発明によるレジンモールド型トラン
ジスタの製造方法によ詐ば、高価な装置を用いず、また
検査時間を大幅に短縮することができる。
As described above, by using the method for manufacturing a resin molded transistor according to the present invention, expensive equipment is not required and inspection time can be significantly shortened.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a1〜(C)は本発明を適用するレジンモール
ド型トランジスタの製造方法を示す工程説明図。 第2図、第3図は本発明のレジンモールド型半導体装置
の対象となるトランジスタを示す説明図である。 l・・・9−)’、2t5・・・フレーム、3・・・レ
ジンモールド型トランジスタ、4a〜4e・・・レジン
材。 6・・・プローブ、7・・・補強レジン膜、8・・・補
強レジン棒、9.10・・・補強リード。 第1図 第  2  図 ど 第  3 図
Figures 1 (a1 to (C)) are process explanatory diagrams showing a method for manufacturing a resin molded transistor to which the present invention is applied. 1...9-)', 2t5...Frame, 3...Resin mold type transistor, 4a to 4e...Resin material. 6... Probe, 7... Reinforced resin film, 8... Reinforced resin rod, 9.10... Reinforced lead. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1、レジンでモールドさnた半導体素子と、上記半導体
素子をモールドするレジンから突出する複数のリードと
を有するレジ/モールド型半導体装置を複数個上記複数
のリードによって1つのフレームに接−するとともに上
記モールド時上記複数個のレジ/モールド型半導体装置
がレジンによって一体に接続されるように形成する工程
と、その後上記複数のリードを上記フレームから分離し
少くとも上記レジンによって複数個のレジ/モールド型
半導体装置を一体に支持する工程とを有することを特徴
とするレジ/モールド型半導体装置の製造方法。
1. A plurality of register/mold type semiconductor devices having a semiconductor element molded with resin and a plurality of leads protruding from the resin molding the semiconductor element are connected to one frame by the plurality of leads, and At the time of the molding, the plurality of register/mold type semiconductor devices are formed so as to be integrally connected by resin, and then the plurality of leads are separated from the frame and the plurality of register/mold type semiconductor devices are formed by at least the resin. 1. A method for manufacturing a register/mold type semiconductor device, comprising the step of integrally supporting the type semiconductor device.
JP16388582A 1982-09-22 1982-09-22 Manufacture of resin mold type semiconductor device Pending JPS5874062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16388582A JPS5874062A (en) 1982-09-22 1982-09-22 Manufacture of resin mold type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16388582A JPS5874062A (en) 1982-09-22 1982-09-22 Manufacture of resin mold type semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11562075A Division JPS5240074A (en) 1975-09-26 1975-09-26 Method for inspection of electrical characteristics of resin molded t ype transistors

Publications (1)

Publication Number Publication Date
JPS5874062A true JPS5874062A (en) 1983-05-04

Family

ID=15782645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16388582A Pending JPS5874062A (en) 1982-09-22 1982-09-22 Manufacture of resin mold type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5874062A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941458A (en) * 1972-03-30 1974-04-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941458A (en) * 1972-03-30 1974-04-18

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