JPH11326445A - Characteristic inspecting method and device for semiconductor device, and manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To automatically remove a deformed lead and a defective on a lead size at the time of characteristic inspection for a semiconductor device. SOLUTION: This device is provided, in a characteristic inspecting part for carrying out characteristic inspection and screening for a diode 2, with an inspection table 6e having a supporting face 6g for supporting a main body part 2a of the diode 2 and a detecting face 6i facing to a mounted face of an outer lead 3c, and an ampere meter 6j connected electrically to the detecting face 6i of the inspection table 6e for detecting contact to the face 6i of the outer lead 3c when the diode 2 is mounted on the supporting face 6g. When the ampere meter 6j does not detect the contact to the detecting face 6i at the time of current impression to the outer lead 3c, the characteristic inspection is carried out to screen a non-defective.a defective. When the ampere meter detects the contact to the face 6i of the outer lead 3c, a shape defective of the outer lead 3c is recognized to sort the diode 2 as a defective.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique and, more particularly, to a method and apparatus for inspecting the characteristics of a semiconductor device which enables selection of a semiconductor device whose outer leads are deformed beyond an allowable range in a semiconductor device selection process. The present invention relates to a device manufacturing method.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

[0003] In the sorting process of the semiconductor manufacturing process, the semiconductor device manufactured by the assembling process is inspected and sorted to determine whether it is manufactured correctly.

When the semiconductor device is a diode or a transistor, a characteristic inspection device called a characteristic selector is used for characteristic inspection and selection.
In the case of C (Integrated Circuit), an IC handler or the like is used.

[0005] Here, some of the IC handlers have a function of detecting a lead bending of an outer lead of the IC in addition to a characteristic inspection and selection function.

Incidentally, various IC handlers or a lead bending detection function provided therein are described in, for example,
Industrial Research Institute Co., Ltd., issued on November 25, 1994,
"Ultra LSI Manufacturing and Testing Equipment Guidebook <1995 Edition>, Electronic Materials November Issue, Separate Volume (1994 Separate Volume)", 18
It is described on pages 2-186.

[0007]

However, in the above-mentioned technology, when a characteristic inspection device is used to inspect the characteristics of a diode, when the contact for characteristic inspection is brought into contact with the outer lead, the outer lead is pressed by the contact force of the contact. May be deformed, and as a result, a substantially defective product in which the outer lead is bent beyond an allowable range may be formed.

However, there is no particular problem in the characteristic inspection. Therefore, there is a problem that a substantially defective product in which the outer lead is deformed is determined to be good and shipped.

Further, if there is no particular problem in the characteristic inspection of a dimensionally defective product such as a forming defect generated at the time of forming in a diode assembling process, there is a problem that it is shipped as it is in the same manner as the deformed defective outer lead. .

An object of the present invention is to provide a method and an apparatus for inspecting characteristics of a semiconductor device for automatically removing a deformed lead or a defective lead dimension by a characteristic inspection, and a method of manufacturing the semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0012]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the method for inspecting characteristics of a semiconductor device according to the present invention, a step of preparing a sensor capable of detecting an eddy current;
A step of forming a magnetic field in a range corresponding to an allowable dimension for deformation of a tip of an outer lead of the semiconductor device in the detection unit of the sensor, and rotating the main body of the semiconductor device while keeping its horizontal state; Passing the tip of the outer lead through the sensing portion where the magnetic field is formed, and forming an eddy current at the tip; and providing the sensing portion where the magnetic field is formed with a plurality of the tip portions of the outer lead. And detecting the change in the eddy current by the sensor, and detecting the change in the eddy current to determine whether the amount of deformation of the tip of the outer lead is within an allowable range. The semiconductor device is selected by detecting the above.

Thus, it is possible to detect the deformation of the tip of the outer lead in both the up and down directions.

As a result, when inspecting the characteristics of the semiconductor device,
It is possible to recognize a defective semiconductor device due to a defective shape of the outer lead, and to sort out and automatically remove the defective product.

As a result, it is possible to prevent the shipment of defective outer leads in the semiconductor device.

Further, according to the semiconductor device characteristic inspection apparatus of the present invention, a contact for characteristic inspection to be brought into contact with an outer lead of the semiconductor device, a support surface for supporting a main body of the semiconductor device and the semiconductor device are provided on the support surface. An inspection table having a detection surface facing the mounting surface of the outer lead when the semiconductor device is mounted, and electrically connected to the detection surface of the inspection table, and the semiconductor device is mounted on the support surface. Detecting means for detecting contact of the outer lead to the detection surface, and a characteristic inspection unit for applying a current to the semiconductor device from the contact via the outer lead to perform a characteristic inspection, wherein the inspection is performed. When the semiconductor device is mounted on the support surface of the table and the characteristic test is performed, if the detection unit does not detect the contact of the outer lead with the detection surface, the characteristic test is performed by performing the characteristic test. It was selected conductor arrangement, whereas, when the detecting means detects the contact to the detection surface of the outer lead is to perform sorting of the semiconductor device to recognize the shape defect of the outer leads.

Further, the method of manufacturing a semiconductor device according to the present invention includes the steps of mounting a semiconductor chip on a chip mounting portion of a frame member to assemble the semiconductor device, preparing a sensor capable of detecting an eddy current; In the detecting section, a step of forming a magnetic field in a range corresponding to an allowable dimension for deformation of the tip of the outer lead of the semiconductor device after assembly, and rotating the main body of the semiconductor device while maintaining its horizontal state, Passing the tip of the outer lead through the sensing portion where the magnetic field is formed, forming an eddy current at the tip, and applying the tip of the outer lead to the sensing portion where the magnetic field is formed. Detecting the change of the eddy current by passing through the outer lead by a plurality of times, and detecting the change of the eddy current by the sensor. The deformation amount of the tip is detected whether or not it is within the allowable range is intended for sorting semiconductor device.

[0019]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is an external perspective view showing an example of an embodiment of the structure of a semiconductor device characteristic inspection apparatus according to the present invention, and FIG.
3A and 3B are diagrams illustrating an example of the structure of a diode manufactured by the method for manufacturing a semiconductor device according to the present invention, wherein FIG. 3A is a cross-sectional view of a non-defective product, FIG. 3B is a front view of a defective product, and FIG. 4 and 5 are enlarged partial cross-sectional views showing an example of an inspection state in the semiconductor device characteristic inspection apparatus shown in FIG. 1, and FIG. 6 is a view showing an example of an inspection state in the semiconductor device characteristic inspection apparatus. FIG. 2 is an enlarged partial cross-sectional view showing an example of a current flow at the time of defective product inspection in the semiconductor device characteristic inspection device shown in FIG.

The semiconductor device characteristic inspection apparatus of the present embodiment shown in FIG. 1 is also called a characteristic selection apparatus and is used in a selection step of a semiconductor manufacturing process. In the selection step, the characteristic inspection of the semiconductor device is performed. In addition to the above, a non-defective / defective semiconductor device is selected based on the result of the characteristic inspection.

In this embodiment, FIG. 2 shows an example of a semiconductor device to be inspected by the characteristic inspection apparatus.
The description will be made by taking the diode 2 shown in FIG.

The characteristic inspection apparatus of the present embodiment shown in FIG. 1 is an elongated tape-shaped frame member in which a plurality of semiconductor chips 1 are mounted on respective diode regions and the plurality of diode regions are formed continuously. Cutting and shaping (trimming / forming) the individual diodes 2 from a certain hoop frame 3 and the individual diodes 2
Are inspected for characteristics, and non-defective / defective products are sorted out.

That is, in the hoop frame 3 in which a plurality of semiconductor chips 1 are die-bonded, resin-sealed and marked in advance, the characteristic inspection apparatus performs characteristic inspection and selection from individual diodes 2 through non-defective diodes. This is a processing device that performs up to taping 2 consistently.

The configuration of the characteristic inspection apparatus shown in FIG. 1 separates (cuts) the hoop frame 3 into individual diodes 2 by cutting, and cuts and forms the hoop frame 3 by bending and forming the outer leads 3c. A frame supply unit 4 having a supply reel 4a taken out and supplying the hoop frame 3 to the cutting and forming unit 5;
, A characteristic inspection unit 6 for selecting good / defective diodes 2, an inspection control unit 7 for controlling the characteristic inspection, and a buffer table for collecting the selected good diodes 2. 11, a taping portion 8 for thermocompression bonding of a good-quality diode 2 to a carrier tape 10 a, and a product housing portion 9 on which a take-up reel 9 a for winding the carrier tape 10 a to which the diode 2 is thermocompression-bonded is provided. Become.

As shown in FIG. 4, the characteristic inspection section 6 includes a contact 6d as a characteristic inspection contact to be brought into contact with the outer lead 3c of the diode 2, and a support for supporting the main body 2a of the diode 2. An inspection table 6e including a surface 6g and a detection surface 6i facing the mounting surface 3e of the outer lead 3c when the diode 2 is mounted on the support surface 6g;
and an ammeter 6j (detection means) that is electrically connected to the detection surface 6i of the e and detects the contact of the outer lead 3c with the detection surface 6i when the diode 2 is mounted on the support surface 6g. During the characteristic inspection, the inspection control unit 7 shown in FIG. 1 performs control for applying a characteristic inspection current to the diode 2 from the contact 6d via the outer lead 3c.

Thus, in the characteristic inspecting apparatus for the diode 2 shown in FIG. 1, when the characteristic inspecting unit 6 places the diode 2 on the support surface 6g of the inspection table 6e and performs the characteristic inspection, the ammeter 6j When the contact of the outer lead 3c with the detection surface 6i is not detected, the characteristic inspection is performed to select good / defective products of the diode 2, while the ammeter 6j detects the contact of the outer lead 3c with the detection surface 6i. If it is detected, the shape of the outer lead 3c is recognized as defective and the diode 2 is detected.
Are screened as defective.

Further, as shown in FIG. 3 or FIG. 4, the inspection table 6e in the characteristic inspection section 6 of the characteristic inspection apparatus of the present embodiment is a diode support table 6f having a support surface 6g.
(Semiconductor device support) and two-way outer leads 3c each having a detection surface 6i and facing the diode 2.
And a detection table 6h provided on both sides of the diode support table 6f.

Here, the detection table 6h is formed of a conductive material such as copper, for example, and the detection tables 6h on both sides of the diode support table 6f must be insulated from each other. The diode support 6f is formed of an insulating material.

Further, the ammeter 6j is electrically connected to the detection table 6h via, for example, a lead wire 6k.

In the inspection table 6e, the height of the detection surface 6i of the detection table 6h is adjusted to the height of the support surface 6d of the diode support table 6f.
g, and the size of the step between the detection surface 6i and the support surface 6g is the same as that of the diode 2 shown in FIG.
Is formed to be slightly larger than the maximum allowable value T between the bottom surface 2b of the main body 2a and the mounting surface 3e of the outer lead 3c.

That is, the step between the support surface 6g and the detection surface 6i is set in accordance with the lead forming dimension of the bending of the outer lead 3c in the trimming / forming step. Here, the detection surfaces on both sides of the support surface 6g are set. 6i is formed to be slightly larger than the maximum allowable value T and lower than the support surface 6g.

Therefore, after the diode 2 is mounted on the support surface 6g, when the contact 6d is brought into contact with the outer lead 3c to perform a characteristic test, the tip 3d of the outer lead 3c is required.
If the nearby deformation is within the range of the maximum allowable value T, the mounting surface 3e of the outer lead 3c does not come into contact with the detection surface 6i, and it is a non-defective product at least with respect to the deformation of the outer lead 3c.

On the other hand, the tip 3 of the outer lead 3c
If the deformation near d exceeds the maximum allowable value T, the mounting surface 3e of the outer lead 3c comes into contact with the detection surface 6i, and when a current is applied from the contact 6d to the outer lead 3c, this current becomes As shown in FIG.
From c, it flows to the detection base 6h, and the current flow 12 at this time can be detected by the ammeter 6j (detection means).

Therefore, the tip 3 of the outer lead 3c
It can be detected by the ammeter 6j that the deformation near d exceeds the maximum allowable value T.

That is, when the characteristic inspection is performed, the outer leads 3
A defective lead deformation product (deformed by pressing force from the contact 6d) of the diode 2 and a defective lead size product (defective product generated at the time of forming) due to the deformation of c can be recognized, and these are automatically removed by sorting. it can.

In the characteristic inspection section 6, as shown in FIG. 3, a plurality of suction collets 6 are arranged on a concentric circle of the rotation center.
The rotating table 6a having the rotating table 6a is rotatably installed, and the diodes 2 sucked and held by the respective sucking collets 6b are sequentially rotated by rotating the rotating table 6a.
e, and a characteristic inspection is performed.

The suction collet 6b is connected to the turntable 6
A plurality of hoses 6c for vacuum suction are provided below the rotary table 6a and above the rotary table 6a and communicate with the respective suction collets 6b.

Thus, at the time of the characteristic inspection, the main body 2a of the diode 2 is sucked and held by the vacuum suction from the vacuum suction hose 6c, and the diode 2 is sequentially transferred by the rotation of the turntable 6a.

The inspection control unit 7 shown in FIG. 1 includes a measuring device 7a and a tester 7b for controlling the current so that a predetermined current is applied to the diode 2 during the characteristic inspection. Control devices are provided, and these control devices apply a predetermined current for characteristic inspection to the diode 2 from the contact 6d via the outer lead 3c.

Further, the taping section 8 is provided with a thermocompression heater 8a for thermocompression-bonding the diodes 2 selected as non-defective products to the carrier tape 10a. The diode 2 determined to be non-defective is thermocompression-bonded to the supplied carrier tape 10a by a thermocompression heater 8a,
Further, in the product storage section 9, the carrier tape 10a on which the diode 2 is thermocompression-bonded is wound up and housed by the winding reel 9a.

Next, the structure of the diode 2 shown in FIG. 2 which is inspected and selected by the semiconductor device characteristic inspection apparatus of the present embodiment will be described.

As shown in FIG. 2A, the diode 2 includes a chip mounting portion 3a for supporting the semiconductor chip 1;
Pad (surface electrode) of semiconductor chip 1 and inner lead 3
b, a bonding wire 13 made of gold or the like for electrically connecting the semiconductor chip 1 to the bonding wire 13
And a main body 2a formed by sealing with a resin seal,
It is composed of two outer leads 3c protruding from the main body 2a so as to face each other.

The semiconductor chip 1 is mounted on the chip mounting portion 3
a is bonded to a by Au-Si eutectic bonding (a bonding using a silver paste or an adhesive may be used) or the like.

The diode 2 shown in FIG. 2A has a good shape in which the deformation of the tip 3d of the outer lead 3c is within the range of the maximum allowable value T. The diode 2 shown in FIG. The defective shape is such that the tip 3d of the outer lead 3c is deformed beyond the range of the maximum allowable value T.

Next, a method for inspecting characteristics of a semiconductor device according to the present embodiment will be described with reference to FIGS.

First, a plurality of semiconductor chips 1 each having a diode element formed on a semiconductor wafer (not shown)
Is cut into individual semiconductor chips 1 by dicing.
To separate.

Further, die bonding for mounting the semiconductor chip 1 on the chip mounting portion 3a of the hoop frame 3 is performed.

At this time, the diode 2 shown in FIG.
The semiconductor chip 1 is mounted on the chip mounting portion 3 by u-Si eutectic bonding (a bonding using a silver paste or an adhesive may be used).
a.

Subsequently, wire bonding for electrically connecting the pads of the semiconductor chip 1 and the inner leads 3b by bonding wires 13 is performed.

After that, the semiconductor chip 1 and the bonding wires 13 are molded using a sealing resin and sealed with a resin, thereby forming the main body 2a of the diode 2.

Thus, the main body portions 2a of the plurality of diodes 2 are formed on the elongated tape-shaped hoop frame 3.

Thereafter, the tape-shaped hoop frame 3 having the plurality of main bodies 2a formed thereon is supplied to the supply reel 4a.
The supply reel 4a is attached to a predetermined portion of the frame supply unit 4.

Subsequently, the hoop frame 3 is taken out from the supply reel 4a, and is conveyed to the cutting and forming section 5.

Further, in the cut forming section 5, the outer lead 3c is cut, and the outer lead 3c is bent to form the diode 2 shown in FIG. 2 (assembly).

Thereafter, the diode 2 is connected to the characteristic inspection section 6.
And the surface 2c of the main body 2a of the diode 2 is held by suction using a suction collet 6b provided on the turntable 6a and by vacuum suction.

Further, as shown in FIG. 3, while the diode 2 is suction-held by the suction collet 6b, the turntable 6a is rotated to transfer the diode 2 above the inspection table 6e.

Subsequently, with respect to the diode 2 that has reached above the inspection table 6e, the evacuation through the vacuum suction hose 6c is stopped, and thereby the supporting surface 6g of the inspection table 6e is stopped.
Is mounted on the diode 2.

Thereafter, in the characteristic inspection section 6, a contact 6d for characteristic inspection is brought into contact with the outer lead 3c, and under the control of the inspection control section 7, a predetermined current is applied from the contact 6d to the outer lead 3c to cause a diode. 2 is performed.

At this time, as shown in FIG. 2A, when the diode 2 is a good lead whose shape (deformation) near the tip 3d of the outer lead 3c is within the maximum allowable value T, the diode 2 is inspected. The mounting state on the table 6e is as shown in FIG. 4, and the outer lead 3c and the detection surface 6i of the detection table 6h of the inspection table 6e are separated from each other without contact.

On the other hand, as shown in FIG. 2B, when the diode 2 is a defective lead whose shape (deformation) near the tip 3d of the outer lead 3c exceeds the maximum allowable value T,
The mounting state of the diode 2 on the inspection table 6e is as shown in FIG. 5, and the outer lead 3c is in contact with the detection surface 6i.

When the characteristics of the lead-shaped diode 2 shown in FIG. 2A are inspected, the diode 2 is placed on the supporting surface 6g of the inspection table 6e and the current is applied to the outer lead 3c. As shown in FIG. 4, since the outer lead 3c does not contact the detection surface 6i, the ammeter 6j as the detection means does not show any special reaction.

At this time, the current flows into the main body 2a of the diode 2, and the characteristic of the diode 2 is inspected.

Further, good / defective products of the diode 2 are selected based on the result of the characteristic inspection. As a result, when a defective product is recognized by the characteristic inspection of the diode 2, the defective product is automatically removed. And a good diode 2
Is supplied to the buffer table 11, where it is temporarily put on standby.

On the other hand, when the characteristics of the diode 2 having the lead shape shown in FIG.
e, when the current is applied to the outer leads 3c placed on the support surface 6g, as shown in FIG.
6 comes into contact with the detection surface 6i, the current flows to the detection table 6h of the inspection table 6e via the outer lead 3c, as shown in FIG. (Ie, the current flow 12
And flows from the outer lead 3c to the ammeter 6j via the detection base 6h).

As a result, the ammeter 6j responds to notify the worker of the contact of the outer lead 3c with the detection surface 6i.

In this case, the diode 2 is recognized as a defective shape of the outer lead 3c.

That is, the diode 2 is recognized as a defective product, and the defective product is selected and automatically removed.

Thereafter, the diode 2 selected as a defective product by the characteristic inspection is transported to a predetermined location.

On the other hand, the diodes 2 selected as non-defective products by the characteristic inspection are supplied to the buffer table 11,
Let me wait there.

Subsequently, the non-defective diode 2 is transported from the buffer table 11 to the taping section 8.

Further, the carrier tape 10a is taken out from the tape supply reel 10, and the carrier tape 10a
Is supplied to the taping unit 8.

Subsequently, in the taping section 8, the diodes 2 are sequentially transferred to the carrier tape 1 by the thermocompression heater 8a.
The carrier tape 10a is thermocompression-bonded to 0a, and the thermocompression-bonded carrier tape 10a is supplied to the product container 9.

Thereafter, in the product storage section 9, the carrier tape 10a having been subjected to the thermocompression bonding is wound up and housed on a winding reel 9a.

According to the semiconductor device characteristic inspection method and apparatus and the semiconductor device manufacturing method of the present embodiment, the following operation and effect can be obtained.

That is, when the characteristic inspection of the diode 2 (semiconductor device) is performed, the inspection table 6e supporting the diode 2
The supporting surface 6g for supporting the diode 2 and the supporting surface 6g
g is provided with a detection surface 6i facing the mounting surface 3e of the outer lead 3c when the diode 2 is mounted on the g, and an ammeter 6j for detecting contact of the outer lead 3c with the detection surface 6i when the diode is mounted. With this arrangement, the diode 2 is mounted on the support surface 6g of the inspection table 6e, and the contact 6
When a current for characteristic inspection is applied from d to the outer lead 3c, if the outer lead 3c is in contact with the detection surface 6i of the inspection table 6e, this contact can be detected by the ammeter 6j.

As a result, the ammeter 6j
When the contact of c with the detection surface 6i is detected, it is possible to recognize a shape defect such as a deformation defect or a dimensional defect of the outer lead 3c.

As a result, when inspecting the characteristics of the diode 2, it is possible to recognize a defective product of the diode 2 due to a defective shape of the outer lead 3c, and to selectively remove the defective product.

As a result, it is possible to prevent shipment of a defective product of the outer lead of the diode 2.

A rotary table 6a having a plurality of suction collets 6b is provided rotatably on a concentric circle of the center of rotation, and the diodes 2 sucked and held by the respective suction collets 6b are sequentially inspected by rotating the rotary table 6a. By performing the characteristic inspection while being placed on the table 6e, the characteristic inspection can be performed efficiently, and as a result, the throughput of the characteristic inspection can be improved.

As a result, the throughput of the step of selecting the diode 2 can be improved.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the above-described embodiment, a case has been described where the characteristic inspection apparatus for a semiconductor device has the cut forming section 5 for cutting out and bending each diode 2 from the hoop frame 3 by cutting. In the characteristic inspection device for semiconductor devices, the diode 2 that has been individually cut in advance is connected to the characteristic inspection unit 6 using a parts feeder or the like.
And a device for performing characteristic inspection and sorting by the characteristic inspection unit 6 may be used.

That is, the characteristic inspection apparatus for the semiconductor device only needs to have at least the characteristic inspection section 6 for performing the characteristic inspection and the sorting, and does not necessarily have to have the cutting and forming section 5. In the case of a characteristic inspection apparatus in which the cutting and forming unit 5 is not provided, a diode 2 which is individually separated (cut and molded) is prepared in advance, and the diode 2 is supplied to the characteristic inspecting unit 6.

As another means for detecting the lead deformation exceeding the allowable range and automatically removing the diode 2 when performing the characteristic inspection in the characteristic inspection section 6, another embodiment shown in FIG. A characteristic inspection apparatus for a semiconductor device according to an embodiment is conceivable.

In a method for inspecting the characteristics of a semiconductor device according to another embodiment shown in FIG. 7, first, a diode 2 (semiconductor device) is assembled and a sensor 1 capable of detecting an eddy current.
Prepare 4

Thereafter, in the detecting portion 14a of the sensor 14, the tip 3d of the outer lead 3c of the diode 2
A magnetic field is formed in a range corresponding to the allowable dimension T for the deformation of

Subsequently, the main body 2a of the diode 2 is rotated while maintaining the horizontal state, and the detecting portion 14a, in which the magnetic field is formed, passes through the tip 3d of the outer lead 3c, and the vortex flows to the tip 3d. Form a current.

Further, for example, the rotary table 6a (FIG. 3)
Detector 1 in which the magnetic field is formed using the rotation of
The tip of the outer lead 3c is passed through the tip 4d of the outer lead 4c a plurality of times, and the sensor 14 detects a change in the eddy current.

By detecting the change in the eddy current,
It is detected whether or not the amount of deformation of the distal end portion 3d of the outer lead 3c is within the range of the allowable dimension, and thereby the diode 2 is selected.

Accordingly, it is possible to detect whether or not the deformation of the tip 3d of the outer lead 3c of the diode 2 is within the allowable range.
The detection range for the deformation of c can be extended in the vertical direction of the tip 3d.

As a result, the tip 3d of the outer lead 3c
Can be detected in both up and down directions.

Thus, the tip 3 of the outer lead 3c is
Even when d (mounting surface 3e) is deformed upward, it is possible to determine whether the deformation amount is within an allowable range, and as a result, the deformation amount is out of the allowable range. In this case, the outer lead 3c can be recognized as having a defective shape, and the diode 2 can be automatically removed.

Therefore, similarly to the above-described embodiment, it is possible to prevent the defective product of the outer lead 3c of the diode 2 from being shipped.

In the above embodiment and the other embodiments, the semiconductor device has two outer leads 3.
Although the case of the diode 2 having c has been described, the semiconductor device may be a transistor having three outer leads 3c, and the number of the outer leads 3c in the diode 2 and the transistor is not particularly limited. Absent.

Further, the semiconductor device has a multi-pin IC (Integrated Circuit) having a plurality of outer leads 3c.
t) and the like.

However, in the case of the multi-pin IC, the detection surface 6i of the detection table 6h corresponding to each pin must be insulated.

[0098]

Advantageous effects obtained by typical ones of the inventions disclosed by the present application will be briefly described as follows.
It is as follows.

(1). A detection table for supporting the semiconductor device during the characteristic inspection is provided with a detection surface facing the mounting surface of the outer lead when the semiconductor device is mounted, and a detection for detecting contact of the outer lead with the detection surface when the semiconductor device is mounted. By having the means, when the semiconductor device is mounted on the inspection table and a current for characteristic inspection is applied to the outer leads, if the outer leads are in contact with the detection surface of the inspection table, the contact is detected by the detection means. Can be detected. This makes it possible to recognize a shape defect of the outer lead. As a result, when inspecting the characteristics of the semiconductor device, it is possible to recognize a defective product of the semiconductor device due to a defective shape of the outer lead, and to sort out and automatically remove the defective product.

(2). According to the above (1), it is possible to prevent shipment of a defective product of the outer lead in the semiconductor device.

(3). A rotary table having a plurality of suction collets on a concentric circle is rotatably installed, and semiconductor devices suction-held by the respective suction collets are sequentially placed on an inspection table by rotation of the rotary table to perform characteristic inspection. Accordingly, the characteristic inspection can be performed efficiently, and as a result, the throughput of the characteristic inspection can be improved. As a result, the throughput of the semiconductor device sorting step can be improved.

[Brief description of the drawings]

FIG. 1 is an external perspective view showing an example of an embodiment of a structure of a semiconductor device characteristic inspection apparatus according to the present invention.

FIGS. 2A and 2B are diagrams showing an example of the structure of a diode (semiconductor device) manufactured by the method of manufacturing a semiconductor device according to the present invention, wherein FIG. () Is a front view of a defective product.

FIG. 3 is an enlarged partial perspective view showing an example of an inspection state in the semiconductor device characteristic inspection apparatus shown in FIG.

FIG. 4 is an enlarged partial cross-sectional view showing one example of an inspection state in the semiconductor device characteristic inspection apparatus shown in FIG.

FIG. 5 is an enlarged partial cross-sectional view showing an example of an inspection state in the semiconductor device characteristic inspection apparatus shown in FIG.

6 is an enlarged partial cross-sectional view showing an example of a current flow at the time of defective product inspection in the semiconductor device characteristic inspection device shown in FIG.

FIG. 7 is a schematic configuration diagram showing a structure of a main part of a semiconductor device characteristic inspection apparatus according to another embodiment of the present invention;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Diode (semiconductor device) 2a Main body 2b Bottom 2c Surface 3 Hoop frame (frame member) 3a Chip mounting part 3b Inner lead 3c Outer lead 3d Tip 3e Mounting surface 4 Frame supply part 4a Supply reel 5 Cutting molding part 6 Characteristic inspection unit 6a Rotary table 6b Suction collet 6c Vacuum suction hose 6d Contact 6e Inspection table 6f Diode support (semiconductor device support) 6g Support surface 6h Detection table 6i Detection surface 6j Ammeter (detection means) 6k Lead wire Reference Signs List 7 inspection control unit 7a measuring device 7b tester 8 taping unit 8a thermocompression heater 9 product storage unit 9a take-up reel 10 tape supply reel 10a carrier tape 11 buffer table 12 current flow 13 bonding wire 14 sensor 14a detection unit

Claims (9)

[Claims] A step of preparing a sensor capable of detecting an eddy current; a step of forming a magnetic field within a range corresponding to an allowable dimension for deformation of a tip portion of an outer lead of a semiconductor device in a detection unit of the sensor; Rotating the main body of the semiconductor device while maintaining its horizontal state, passing the tip of the outer lead through the detection unit in which the magnetic field is formed, and forming an eddy current at the tip; Passing the tip of the outer lead a plurality of times through the detection unit where the magnetic field is formed, and detecting a change in the eddy current by the sensor. A method for inspecting characteristics of a semiconductor device, wherein the semiconductor device is selected by detecting whether a deformation amount of the tip of the outer lead is within an allowable range. 2. An inspection table for characteristic inspection, comprising: a support surface for supporting a main body of a semiconductor device; and a detection surface facing a mounting surface of an outer lead when the semiconductor device is mounted on the support surface. Preparing the semiconductor device on the support surface of the inspection table, mounting the semiconductor device on the support surface of the inspection table, and contacting the outer lead with the contact for the characteristic inspection. Contact
A step of applying a current to the outer lead from the contact, and when the current is applied to the outer lead, detection means electrically connected to the detection surface detects contact of the outer lead with the detection surface. If not, the semiconductor device is selected by applying a current to the semiconductor device to perform the characteristic test, while selecting the semiconductor device when the detecting means detects the contact of the outer lead with the detection surface. A step of recognizing the defective shape of the semiconductor device and selecting the semiconductor device. A contact for characteristic inspection to be brought into contact with an outer lead of the semiconductor device; a support surface for supporting a main body of the semiconductor device; and a mounting of the outer lead when the semiconductor device is mounted on the support surface. An inspection table having a detection surface opposed to a surface, electrically connected to the detection surface of the inspection table, and contacting the outer lead with the detection surface when the semiconductor device is mounted on the support surface. And a characteristic inspection unit that applies a current to the semiconductor device from the contact via the outer lead to perform a characteristic inspection, and mounts the semiconductor device on the support surface of the inspection table. When performing the characteristic inspection by placing the semiconductor device, if the detection unit does not detect the contact of the outer lead with the detection surface, the characteristic inspection is performed to select the semiconductor device. The characteristic test device of the semiconductor device in the case of detecting a contact and performing selection of said semiconductor device to recognize the shape defect of the outer lead to the detection surface of the outer lead. 4. The characteristic inspection apparatus for a semiconductor device according to claim 3, wherein the inspection table has a semiconductor device support table having the support surface, and each of the inspection tables has the detection surface. A characteristic inspection apparatus for a semiconductor device, comprising: a detection table provided on both sides of the semiconductor device support table in accordance with two opposing outer leads. 5. The characteristic inspection apparatus for a semiconductor device according to claim 3, wherein a rotary table having a plurality of suction collets is rotatably installed on a concentric circle of a rotation center,
The characteristic inspection apparatus for a semiconductor device, wherein the semiconductor devices sucked and held by the respective suction collets are sequentially placed on the inspection table by rotation of the turntable to perform a characteristic inspection. 6. The characteristic inspecting device for a semiconductor device according to claim 3, wherein the semiconductor device is a diode having two outer leads facing each other. . 7. A step of mounting a semiconductor chip on a chip mounting portion of a frame member to assemble a semiconductor device; a step of preparing a sensor capable of detecting an eddy current; Forming a magnetic field in a range corresponding to an allowable dimension for deformation of the tip of the outer lead of the device, and rotating the main body of the semiconductor device while keeping its horizontal state, and applying the magnetic field to the detection unit where the magnetic field is formed. Passing the distal end of the outer lead to form an eddy current at the distal end; passing the distal end of the outer lead a plurality of times through the detection unit where the magnetic field is formed; Detecting a change in the eddy current, and detecting the change in the eddy current so that the amount of deformation of the distal end portion of the outer lead is within an allowable range. The method of manufacturing a semiconductor device, characterized by selecting the semiconductor device whether the detecting. 8. A step of mounting a semiconductor chip on a chip mounting portion of a frame member to assemble a semiconductor device, a support surface for supporting a body portion of the semiconductor device after assembly, and mounting the semiconductor device on the support surface. A step of preparing an inspection table for characteristic inspection having a detection surface facing the mounting surface of the outer lead when being placed; a step of mounting the semiconductor device on the support surface of the inspection table; Placing the semiconductor device on the support surface of a table and bringing the contact for property inspection into contact with the outer lead,
A step of applying a current to the outer lead from the contact, and when the current is applied to the outer lead, detection means electrically connected to the detection surface detects contact of the outer lead with the detection surface. If not, the semiconductor device is selected by applying a current to the semiconductor device to perform the characteristic test, while selecting the semiconductor device when the detecting means detects the contact of the outer lead with the detection surface. Recognizing the defective shape of the semiconductor device and selecting the semiconductor device. 9. The method of manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is a diode having two outer leads facing each other, and the characteristic test of the diode is performed. A method for manufacturing a semiconductor device.