JPS5874061A - Manufacture of dip type case - Google Patents

Manufacture of dip type case

Info

Publication number
JPS5874061A
JPS5874061A JP17430281A JP17430281A JPS5874061A JP S5874061 A JPS5874061 A JP S5874061A JP 17430281 A JP17430281 A JP 17430281A JP 17430281 A JP17430281 A JP 17430281A JP S5874061 A JPS5874061 A JP S5874061A
Authority
JP
Japan
Prior art keywords
lead
lead frame
dip type
leads
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17430281A
Other languages
Japanese (ja)
Other versions
JPS6255302B2 (en
Inventor
Shigeru Kubota
茂 久保田
Shoichi Ogura
小倉 昭一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17430281A priority Critical patent/JPS5874061A/en
Publication of JPS5874061A publication Critical patent/JPS5874061A/en
Publication of JPS6255302B2 publication Critical patent/JPS6255302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To stably obtain a DIP type glass case having many leads, by cutting joint parts which fix each lead after fixing a lead frame on an insulating substrate via a glass member and by bending leads at the fixed position. CONSTITUTION:A glass member 2 is provided on an insulating substrate 1, and a flat lead frame 5 having joint parts 4 among leads 3 is fixed. Next, the joint parts 4 are cut, and leads are bent 7 at the fixed position. In this constitution, since the instability of the top end of lead does not occured when bending the lead frame, and the lead frame 5 is flat, it can be stably fixed on the substrate 1, and accordingly a high quality DIP type glass case can be stably manufactured.

Description

【発明の詳細な説明】 この発明はDIP型ケースの製造方法にかかシ、特に多
数リードを有するDIP型硝子ケースの製造方法に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a DIP type case, and more particularly to a method of manufacturing a DIP type glass case having multiple leads.

従来の硝子ケースの製造方法は絶縁基板上に硝子材料を
介してDIP型リードフレームを1着してDIP型ケー
スを製造してい良。
The conventional method for manufacturing a glass case is to manufacture a DIP type case by attaching one DIP type lead frame to an insulating substrate through a glass material.

すなわち、従来のDIPI!l硝子ケースはり一ド7レ
ームを薄板から打抜き、さらに所定の位置で折曲げた状
態のDIP型リードフレームを用いて絶縁基板上の硝子
材料を介して固着する方法で製造していた。しかしなが
ら、リードフレームが24リ一ド以上の多数リードにガ
つた場合DIP型リードフレーム、特に端部のリードは
、金属細線で配線するリード先端部から折曲げ部までの
距離が長い為、リード先端部の安定性が々くなる。
That is, conventional DIPI! The glass case was manufactured by punching out 7 frames from a thin plate and fixing it to an insulating substrate via a glass material using a DIP type lead frame bent at a predetermined position. However, if the lead frame has a large number of leads (24 leads or more), DIP type lead frames, especially the leads at the ends, have a long distance from the lead tip to the bent part where the wire is wired with thin metal wire, so the lead tip The stability of the parts is improved.

それゆえ、リードフレームのリード先端のバラツキが大
きくなシさらにリード先端部の位置精度も低下し絶縁基
板上の硝子材料に均一に固着することが出来なかった。
Therefore, the dispersion of the lead tips of the lead frame was large, and the positional accuracy of the lead tips also deteriorated, making it impossible to uniformly fix the leads to the glass material on the insulating substrate.

その為にDIP型硝子ケースを製造した後の半導体素子
の組立を安定に行なうむとが出来ず、組立工程の自動化
を容易に行なうことも出来なかつた◎ 本発明の目的は上述したDIP型硝子ケースの製造方法
を改良し組立工程における品質の安定化、組立工程の自
動化を計ったDIP型硝子ケースの製造方法を提供する
ものである。
For this reason, it was impossible to stably assemble the semiconductor elements after manufacturing the DIP type glass case, and it was not possible to easily automate the assembly process. The present invention provides a method of manufacturing a DIP type glass case, which improves the manufacturing method of the DIP type glass case, stabilizes quality in the assembly process, and automates the assembly process.

本発明の特徴は、DIP型ケースの製造方法において、
硝子封止する領域外に各リード間を固定する連結部を有
するフラットリードフレームを絶縁基板上の硝子材料を
介して固着する工程と、各リード間を固定する連結部を
切断する工程と、所定の位置で折シ曲げる同定を含むD
IP型ケースの製造方法にある。
The feature of the present invention is that in the method of manufacturing a DIP type case,
A step of fixing a flat lead frame having connecting portions for fixing each lead outside the area to be sealed with glass through a glass material on an insulating substrate, a step of cutting the connecting portions for fixing each lead, and a step of cutting the connecting portions for fixing each lead to each other. D including the identification of bending at the position of
It is in the manufacturing method of IP type case.

次に本発明の詳細な説明する。第1図に示す様に絶縁基
板l上に硝子材料2t−形成する工程と、第2図に示す
様に硝子材料2と接触しない領域で、しかも所定の位置
で折曲げる部分から離れた位置にリードフレームのリー
ド3間を連結する連結部4を有するフラットリードフレ
ーム5を用いて絶縁基板1上の硝子材料2に固着する工
程と、第3図に示す様に連結部4を切断して所定の位置
で折曲げを行なう工程とを含むDIPffi硝子ケース
6の製造方法である。
Next, the present invention will be explained in detail. As shown in FIG. 1, the glass material 2t is formed on the insulating substrate l, and as shown in FIG. A process of fixing a flat lead frame 5 having a connecting part 4 connecting between the leads 3 of the lead frame to a glass material 2 on an insulating substrate 1, and cutting the connecting part 4 to a predetermined position as shown in FIG. This is a method of manufacturing a DIPffi glass case 6, including a step of bending at the position.

この様なりIP型硝子ケースの製造方法はリードフレー
ムのリード先端のバラツキがリード間を固定する連結部
で保持されておシ、シかも、リードフレーム製造時のプ
レス工程の歪み奄フラット型リード7レムである為極〈
わずかに押えられ、リードフレームのリード先端位置精
度を確保する仁とが出来るから、絶縁基板上の硝子材料
に均一に固着することが出来る。しかも絶縁基板上の硝
子に7ラツトリ一ドフレーム管固着したのちにDIP型
硝子ケースを製造するためにリードフレームの折曲げ時
のリード先端のバラツキは発生しない。
In this way, the manufacturing method for IP type glass cases is such that the unevenness of the lead tips of the lead frame is held by the connection part that fixes the leads. Rem is a pole
Since it is slightly pressed down and a groove is formed to ensure the accuracy of the position of the lead tip of the lead frame, it is possible to uniformly adhere to the glass material on the insulating substrate. Moreover, since the DIP type glass case is manufactured after the seven-layer lead frame tube is fixed to the glass on the insulating substrate, variations in the lead tips do not occur when the lead frame is bent.

従って、24リ一ド以上を有するリードフレームの絶縁
基板上の硝子材料の固着が安定にしかも均一に行なう事
が出来る・ 以上説明した様にこの発明によるDIP型硝子ケースの
製造方法は多数リードを有するDIPII硝子ケースを
品質よく安定に製造することが出来る・     :・
Therefore, the glass material on the insulating substrate of a lead frame having 24 leads or more can be stably and uniformly fixed.As explained above, the method for manufacturing a DIP type glass case according to the present invention can have a large number of leads. We can stably manufacture DIP II glass cases with high quality.
,

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図および第3図は本発明のDIP型硝子ケ
ースの製造方法を示す図である。 尚、図において、l・・・・・・絶縁基板、2・・・・
・・硝子材料、3・・・・・・リード、4・・・・・・
連結部、5・・・・・・フラットリードフレーム、6・
・・・・・DIPfl硝子ケース、7・・・・・・折曲
げ部である。 代理人 弁理士 内 原  晋 12昭 第3図
FIGS. 1, 2, and 3 are diagrams showing a method of manufacturing a DIP type glass case according to the present invention. In the figure, l... insulating substrate, 2...
...Glass material, 3...Lead, 4...
Connection part, 5...Flat lead frame, 6.
...DIPfl glass case, 7...Bent part. Agent Patent Attorney Susumu Uchihara 12th year Figure 3

Claims (1)

【特許請求の範囲】[Claims] 硝子封止する領域外に各リード間を固定する連結部を有
するフラットリードフレームを絶縁基板上の硝子材料を
介して固着する工程と、各リード間を固定する該連結部
を切断する工程と、所定の位置で折シ曲げる固定を含む
ことを特徴とするDIP型ケースの製造方法。
A step of fixing a flat lead frame having a connecting portion for fixing between each lead outside the area to be glass-sealed via a glass material on an insulating substrate, and a step of cutting the connecting portion for fixing between each lead, A method for manufacturing a DIP type case, the method comprising fixing the case by bending it at a predetermined position.
JP17430281A 1981-10-29 1981-10-29 Manufacture of dip type case Granted JPS5874061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17430281A JPS5874061A (en) 1981-10-29 1981-10-29 Manufacture of dip type case

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17430281A JPS5874061A (en) 1981-10-29 1981-10-29 Manufacture of dip type case

Publications (2)

Publication Number Publication Date
JPS5874061A true JPS5874061A (en) 1983-05-04
JPS6255302B2 JPS6255302B2 (en) 1987-11-19

Family

ID=15976282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17430281A Granted JPS5874061A (en) 1981-10-29 1981-10-29 Manufacture of dip type case

Country Status (1)

Country Link
JP (1) JPS5874061A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373656A (en) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110772A (en) * 1974-02-08 1975-09-01
JPS5159269A (en) * 1974-11-20 1976-05-24 Nippon Electric Co Handotaisochino seizohoho
JPS5386575A (en) * 1977-01-10 1978-07-31 Mitsubishi Electric Corp Production of semiconductor device
JPS5390867A (en) * 1977-01-21 1978-08-10 Hitachi Ltd Glass hermetic sealing for lead wire

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110772A (en) * 1974-02-08 1975-09-01
JPS5159269A (en) * 1974-11-20 1976-05-24 Nippon Electric Co Handotaisochino seizohoho
JPS5386575A (en) * 1977-01-10 1978-07-31 Mitsubishi Electric Corp Production of semiconductor device
JPS5390867A (en) * 1977-01-21 1978-08-10 Hitachi Ltd Glass hermetic sealing for lead wire

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373656A (en) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH0622266B2 (en) * 1986-09-17 1994-03-23 三菱電機株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6255302B2 (en) 1987-11-19

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