JPS5866407A - 薄膜圧電フイルタの製造方法 - Google Patents
薄膜圧電フイルタの製造方法Info
- Publication number
- JPS5866407A JPS5866407A JP14586281A JP14586281A JPS5866407A JP S5866407 A JPS5866407 A JP S5866407A JP 14586281 A JP14586281 A JP 14586281A JP 14586281 A JP14586281 A JP 14586281A JP S5866407 A JPS5866407 A JP S5866407A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- substrate
- filter
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 16
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 ethylene diamine Chemical compound 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14586281A JPS5866407A (ja) | 1981-09-16 | 1981-09-16 | 薄膜圧電フイルタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14586281A JPS5866407A (ja) | 1981-09-16 | 1981-09-16 | 薄膜圧電フイルタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5866407A true JPS5866407A (ja) | 1983-04-20 |
| JPH0158889B2 JPH0158889B2 (enrdf_load_stackoverflow) | 1989-12-14 |
Family
ID=15394781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14586281A Granted JPS5866407A (ja) | 1981-09-16 | 1981-09-16 | 薄膜圧電フイルタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5866407A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007159116A (ja) * | 2005-12-07 | 2007-06-21 | Samsung Electronics Co Ltd | 複数の素子を相互隔離させるためのエアキャビティを備えたシステムオンチップ構造物、デュプレックサー及びその製造方法 |
-
1981
- 1981-09-16 JP JP14586281A patent/JPS5866407A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007159116A (ja) * | 2005-12-07 | 2007-06-21 | Samsung Electronics Co Ltd | 複数の素子を相互隔離させるためのエアキャビティを備えたシステムオンチップ構造物、デュプレックサー及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0158889B2 (enrdf_load_stackoverflow) | 1989-12-14 |
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