JPS5863157A - 半導体装置とこれを用いた高電圧回路 - Google Patents

半導体装置とこれを用いた高電圧回路

Info

Publication number
JPS5863157A
JPS5863157A JP56162278A JP16227881A JPS5863157A JP S5863157 A JPS5863157 A JP S5863157A JP 56162278 A JP56162278 A JP 56162278A JP 16227881 A JP16227881 A JP 16227881A JP S5863157 A JPS5863157 A JP S5863157A
Authority
JP
Japan
Prior art keywords
region
voltage
gate
drain region
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56162278A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337748B2 (enrdf_load_stackoverflow
Inventor
Toshihide Kuriyama
敏秀 栗山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56162278A priority Critical patent/JPS5863157A/ja
Publication of JPS5863157A publication Critical patent/JPS5863157A/ja
Publication of JPH0337748B2 publication Critical patent/JPH0337748B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56162278A 1981-10-12 1981-10-12 半導体装置とこれを用いた高電圧回路 Granted JPS5863157A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56162278A JPS5863157A (ja) 1981-10-12 1981-10-12 半導体装置とこれを用いた高電圧回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56162278A JPS5863157A (ja) 1981-10-12 1981-10-12 半導体装置とこれを用いた高電圧回路

Publications (2)

Publication Number Publication Date
JPS5863157A true JPS5863157A (ja) 1983-04-14
JPH0337748B2 JPH0337748B2 (enrdf_load_stackoverflow) 1991-06-06

Family

ID=15751427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56162278A Granted JPS5863157A (ja) 1981-10-12 1981-10-12 半導体装置とこれを用いた高電圧回路

Country Status (1)

Country Link
JP (1) JPS5863157A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0337748B2 (enrdf_load_stackoverflow) 1991-06-06

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