JPS5863148A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5863148A JPS5863148A JP56161337A JP16133781A JPS5863148A JP S5863148 A JPS5863148 A JP S5863148A JP 56161337 A JP56161337 A JP 56161337A JP 16133781 A JP16133781 A JP 16133781A JP S5863148 A JPS5863148 A JP S5863148A
- Authority
- JP
- Japan
- Prior art keywords
- type
- fuse element
- insulating film
- semiconductor device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 238000007664 blowing Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 230000002411 adverse Effects 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 230000007257 malfunction Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56161337A JPS5863148A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
| EP82108975A EP0076967B1 (en) | 1981-10-09 | 1982-09-28 | Semiconductor device having a fuse element |
| DE8282108975T DE3276981D1 (en) | 1981-10-09 | 1982-09-28 | Semiconductor device having a fuse element |
| US06/910,850 US4723155A (en) | 1981-10-09 | 1986-09-24 | Semiconductor device having a programmable fuse element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56161337A JPS5863148A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5863148A true JPS5863148A (ja) | 1983-04-14 |
| JPS6351383B2 JPS6351383B2 (enrdf_load_stackoverflow) | 1988-10-13 |
Family
ID=15733159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56161337A Granted JPS5863148A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5863148A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172739A (ja) * | 1986-01-24 | 1987-07-29 | Nec Corp | 半導体集積回路 |
| JPS6480037A (en) * | 1987-09-19 | 1989-03-24 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0344063A (ja) * | 1989-07-11 | 1991-02-25 | Sharp Corp | 半導体装置 |
| JPH0917874A (ja) * | 1995-06-29 | 1997-01-17 | Nec Corp | 半導体装置およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52149482A (en) * | 1976-06-04 | 1977-12-12 | Bosch Gmbh Robert | Device for isolating conductive path on ic |
-
1981
- 1981-10-09 JP JP56161337A patent/JPS5863148A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52149482A (en) * | 1976-06-04 | 1977-12-12 | Bosch Gmbh Robert | Device for isolating conductive path on ic |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172739A (ja) * | 1986-01-24 | 1987-07-29 | Nec Corp | 半導体集積回路 |
| JPS6480037A (en) * | 1987-09-19 | 1989-03-24 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0344063A (ja) * | 1989-07-11 | 1991-02-25 | Sharp Corp | 半導体装置 |
| JPH0917874A (ja) * | 1995-06-29 | 1997-01-17 | Nec Corp | 半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6351383B2 (enrdf_load_stackoverflow) | 1988-10-13 |
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