JPS586311B2 - ハンドウタイソウチノセイゾウホウホウ - Google Patents
ハンドウタイソウチノセイゾウホウホウInfo
- Publication number
- JPS586311B2 JPS586311B2 JP50036184A JP3618475A JPS586311B2 JP S586311 B2 JPS586311 B2 JP S586311B2 JP 50036184 A JP50036184 A JP 50036184A JP 3618475 A JP3618475 A JP 3618475A JP S586311 B2 JPS586311 B2 JP S586311B2
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- region
- type
- impurity
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50036184A JPS586311B2 (ja) | 1975-03-25 | 1975-03-25 | ハンドウタイソウチノセイゾウホウホウ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50036184A JPS586311B2 (ja) | 1975-03-25 | 1975-03-25 | ハンドウタイソウチノセイゾウホウホウ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51110980A JPS51110980A (en) | 1976-09-30 |
| JPS586311B2 true JPS586311B2 (ja) | 1983-02-03 |
Family
ID=12462634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50036184A Expired JPS586311B2 (ja) | 1975-03-25 | 1975-03-25 | ハンドウタイソウチノセイゾウホウホウ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS586311B2 (cs) |
-
1975
- 1975-03-25 JP JP50036184A patent/JPS586311B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51110980A (en) | 1976-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4357622A (en) | Complementary transistor structure | |
| US4060427A (en) | Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps | |
| US4485552A (en) | Complementary transistor structure and method for manufacture | |
| US4025364A (en) | Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases | |
| EP0262370A2 (en) | Semiconductor device comprising a MOS transistor, and method of making the same | |
| JPS586311B2 (ja) | ハンドウタイソウチノセイゾウホウホウ | |
| JPS6262457B2 (cs) | ||
| JPH05326680A (ja) | 半導体装置の製造方法 | |
| JPH05267338A (ja) | 半導体装置の製造方法 | |
| JPS646537B2 (cs) | ||
| JPS6211504B2 (cs) | ||
| JPH06333869A (ja) | 半導体装置の製造方法 | |
| JP2828264B2 (ja) | 半導体装置の製造方法 | |
| JPH0477459B2 (cs) | ||
| JPH05235009A (ja) | 半導体集積回路装置の製造方法 | |
| JPH04213834A (ja) | バイポーラ集積回路の製造方法 | |
| JPS605561A (ja) | 半導体装置の製造方法 | |
| JPH0567623A (ja) | 半導体装置の製造方法 | |
| JPS63169763A (ja) | トランジスタの製造方法 | |
| JPH0795536B2 (ja) | 半導体装置の製造方法 | |
| JPH0132669B2 (cs) | ||
| JPH04170022A (ja) | 埋め込み層の形成方法 | |
| JPS62193166A (ja) | 相補型mis集積回路のウエル形成方法 | |
| JPS5886768A (ja) | 半導体装置の製造方法 | |
| JPS62211949A (ja) | 半導体装置の製造法 |