JPH0132669B2 - - Google Patents
Info
- Publication number
- JPH0132669B2 JPH0132669B2 JP56189078A JP18907881A JPH0132669B2 JP H0132669 B2 JPH0132669 B2 JP H0132669B2 JP 56189078 A JP56189078 A JP 56189078A JP 18907881 A JP18907881 A JP 18907881A JP H0132669 B2 JPH0132669 B2 JP H0132669B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- conductivity type
- oxide film
- silicon oxide
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56189078A JPS5891673A (ja) | 1981-11-27 | 1981-11-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56189078A JPS5891673A (ja) | 1981-11-27 | 1981-11-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5891673A JPS5891673A (ja) | 1983-05-31 |
| JPH0132669B2 true JPH0132669B2 (cs) | 1989-07-10 |
Family
ID=16234934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56189078A Granted JPS5891673A (ja) | 1981-11-27 | 1981-11-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5891673A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58222570A (ja) * | 1982-06-18 | 1983-12-24 | Nec Home Electronics Ltd | トランジスタ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562792B2 (cs) * | 1974-03-30 | 1981-01-21 |
-
1981
- 1981-11-27 JP JP56189078A patent/JPS5891673A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5891673A (ja) | 1983-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4060427A (en) | Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps | |
| JPH05347383A (ja) | 集積回路の製法 | |
| US4408387A (en) | Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask | |
| US4191595A (en) | Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface | |
| JPS62290173A (ja) | 半導体集積回路装置の製造方法 | |
| US4968635A (en) | Method of forming emitter of a bipolar transistor in monocrystallized film | |
| JPH0132669B2 (cs) | ||
| JPS6220711B2 (cs) | ||
| JP2890509B2 (ja) | 半導体装置の製造方法 | |
| JPH1140573A (ja) | 半導体装置の製造方法 | |
| JPH0245331B2 (cs) | ||
| JPS6122866B2 (cs) | ||
| JP2546650B2 (ja) | バイポ−ラトランジスタの製造法 | |
| JP2576664B2 (ja) | Npnトランジスタの製造方法 | |
| JPS63211755A (ja) | 半導体装置の製造方法 | |
| JP3041886B2 (ja) | 半導体装置の製造方法 | |
| JP2943280B2 (ja) | 半導体装置の製造方法 | |
| JPH0744183B2 (ja) | 半導体装置の製造方法 | |
| JPH04152531A (ja) | 半導体装置の製造方法 | |
| JPH0548937B2 (cs) | ||
| JPS63144567A (ja) | 半導体装置の製造方法 | |
| JPH0621077A (ja) | 半導体装置およびその製造方法 | |
| JPH0567623A (ja) | 半導体装置の製造方法 | |
| JPS60235464A (ja) | 半導体装置の製造方法 | |
| JPH02122620A (ja) | 半導体装置の製造方法 |