JPS5860544A - 結晶欠陥のゲツタリング法 - Google Patents

結晶欠陥のゲツタリング法

Info

Publication number
JPS5860544A
JPS5860544A JP16064281A JP16064281A JPS5860544A JP S5860544 A JPS5860544 A JP S5860544A JP 16064281 A JP16064281 A JP 16064281A JP 16064281 A JP16064281 A JP 16064281A JP S5860544 A JPS5860544 A JP S5860544A
Authority
JP
Japan
Prior art keywords
silicon film
single crystal
oxygen
crystal silicon
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16064281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026221B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hirozo Takano
高野　博三
Takayuki Matsukawa
隆行 松川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16064281A priority Critical patent/JPS5860544A/ja
Publication of JPS5860544A publication Critical patent/JPS5860544A/ja
Publication of JPH026221B2 publication Critical patent/JPH026221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP16064281A 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法 Granted JPS5860544A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16064281A JPS5860544A (ja) 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16064281A JPS5860544A (ja) 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法

Publications (2)

Publication Number Publication Date
JPS5860544A true JPS5860544A (ja) 1983-04-11
JPH026221B2 JPH026221B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-08

Family

ID=15719342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16064281A Granted JPS5860544A (ja) 1981-10-06 1981-10-06 結晶欠陥のゲツタリング法

Country Status (1)

Country Link
JP (1) JPS5860544A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179731A (ja) * 1986-02-04 1987-08-06 Fujitsu Ltd 半導体装置
US6001711A (en) * 1997-03-12 1999-12-14 Nec Corporation Process of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179731A (ja) * 1986-02-04 1987-08-06 Fujitsu Ltd 半導体装置
US6001711A (en) * 1997-03-12 1999-12-14 Nec Corporation Process of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layer

Also Published As

Publication number Publication date
JPH026221B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-08

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