JPS5858721A - Chip solid electrolytic condenser and method of producing same - Google Patents

Chip solid electrolytic condenser and method of producing same

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Publication number
JPS5858721A
JPS5858721A JP15799581A JP15799581A JPS5858721A JP S5858721 A JPS5858721 A JP S5858721A JP 15799581 A JP15799581 A JP 15799581A JP 15799581 A JP15799581 A JP 15799581A JP S5858721 A JPS5858721 A JP S5858721A
Authority
JP
Japan
Prior art keywords
frame
terminal
chip
lead wire
condenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15799581A
Other languages
Japanese (ja)
Inventor
半田 喜代二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marcon Electronics Co Ltd
Original Assignee
Marcon Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marcon Electronics Co Ltd filed Critical Marcon Electronics Co Ltd
Priority to JP15799581A priority Critical patent/JPS5858721A/en
Publication of JPS5858721A publication Critical patent/JPS5858721A/en
Pending legal-status Critical Current

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  • Primary Cells (AREA)
  • Thermistors And Varistors (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 木兄−はチップ型固体亀解コンデン!およびそのl1l
lfi方法に関するもので、特にコンデン賃素子からの
リード線の長さを知くすることによって小形化を因ると
ともにレーず光線を用いてリード1などの溶接や切断を
行って漏れ電流などの、特性向上や歩留向上を倉内した
ものである。    、従来W繍モールドで外装したチ
ッIIiM−坏電−コンデンt#i第1図にボすように
たとえdタンタル粉末をタンタルリード線ωとともに成
形−睨結一化成一給鰻マンガン溶液塗布−睨戚の1栓を
経たのち、腕記化収〜胱成工程を繰返して二酸化マンガ
ンを生威し、該二酸化マンガン上にカーボンダラファイ
ト、銀ペーストを論布してl1111徳層を形成したタ
ンタルリード−(1)を看するコンテンす素子(2)を
得ていた。そして該コンゾンデ素子(2)に爺員叙を打
抜きや折曲げ加工し′fC−他端子(3)を削紀す−ド
巌α)と友ね合わせてスホット#紐にょシ溶接部η)を
*&L、また陰4IIKIfiiI&i配隆憾層に鴎憾
端子(5)をハンダ付けしたのち#7!脂(6)でモー
ルドLJ)装としていた0しかしながらこの構造の場合
にはスポット溶接な用いるものであるからスポット溶接
機の電−がコンテンを素子(2)趨向と一極端子(3)
間に位置することとなるので一憾端子(3)を折曲けて
溶接部(4)としなけれ#fならないのでそれだけのス
ペースを瞥し溶接部(4)とコンテン11子(2) @
 ilとの開−が大きくなる欠点があった。またこのコ
ンテンす素子(2)5ImrkJと浴接部(4)との距
龜をできる限り知くしようとすると溶!1es(イ)〕
がリード!i (1)先端となシスポット溶に#の加圧
力によって溶警機の電−かリード線(1)先端からすべ
ってしまいコンデンテ翫子(2)のリード−(1)m股
部に機械的ストレスを加え漏れ電流を増加せしめる場合
があった・したがって第1図のような構成の場合にはコ
ンデンサ素子(2〕錫釦から浴接部(4)までの長さは
一定値以上全姿であシ、これが小形化を組沓している一
因と41なっていた。さらにスポット浴接を用いた場合
にはその加圧力や発熱などによってリード線(1)やv
lIj樵端子(3)に変形を生じ易くコンゾンデ素子(
2Jに対し機械的ストレスを与えるばか〕でなく樹脂(
4)をモールドする際にも不都合を生じ易いし、ii!
極端子(3)の材料としても比較的電気抵抗の高いF 
e # N 1あるいはこれらの合金など材質が制限さ
れる問題点もあった。1g1図に示した構造とは別にた
とえば第2図に平面図を不すようにコンゾンデ素子(1
2)のリード線(11)に対し陽一端子または陽−リー
ド線(13]を交叉させてスポット溶接機によって[1
es(14)を形成するものも知られている。
[Detailed Description of the Invention] Kien is a chip-type solid turtle condensate! and its l1l
This relates to the LFI method, in particular, by knowing the length of the lead wire from the capacitor element, it is possible to reduce the size, and also to weld and cut lead 1 etc. using a laser beam to reduce leakage current, etc. Kurauchi has improved the characteristics and yield. As shown in Fig. 1, molding of tantalum powder together with tantalum lead wire ω - Application of manganese solution - Glare After passing through one stopper, the tantalum reed was produced by repeating the process of oxidation and formation to produce manganese dioxide, and then applied carbon dalafite and silver paste on the manganese dioxide to form a 1111 layer. - A content element (2) which looks at (1) was obtained. Then, punch out or bend the consonant element (2) and combine it with the other terminal (3) to form the welded part η). *&L, and after soldering the 驎澤 terminal (5) to the Yin 4 II KI fi I I & i Iryuan layer, #7! However, in this structure, spot welding is used, so the spot welder's electricity is applied to the element (2) direction and the one-pole terminal (3).
Since it will be located between the welding part (4) and the welding part (4), I will have to bend the terminal (3) and make it into the welding part (4).
There was a drawback that the gap with il became large. Also, if you try to know as much as possible the distance between this content element (2) 5ImrkJ and the bath contact part (4), it will melt! 1es (a)]
is the lead! i (1) Due to the pressure of # on the tip of the cispot, the lead wire (1) of the welding alarm slipped from the tip, and the lead of the condente rod (2) - (1) m was attached to the crotch of the machine. Therefore, in the case of the configuration shown in Figure 1, the length from the capacitor element (2) to the bath contact part (4) may exceed a certain value or increase the leakage current. This is one of the reasons for the downsizing.Furthermore, when spot bath welding is used, the lead wire (1) and v
The consonde element (
2J is not a fool] but a resin (
Inconveniences tend to occur when molding 4), and ii!
F has a relatively high electrical resistance as a material for the electrode terminal (3).
There was also the problem that materials such as e#N1 or alloys thereof were limited. In addition to the structure shown in Figure 1g1, for example, a consonde element (1
Cross the positive terminal or the positive lead wire (13) to the lead wire (11) of 2) and use a spot welder to connect [1].
Those forming es(14) are also known.

しかしこの構成の場合で一−U述の第1図にボした構成
のコンテンすと全く同一の8m点がある。そして従来に
おいてはスポット浴接の如くコンテン!のリード線と板
状のS一端子またIribm !J−ドーと祉これらを
上下1対の溶接電値で挾み込んで加圧しながらIMti
lするという技袖思想によって貫かれていた。
However, in the case of this configuration, there is an 8m point that is exactly the same as the content of the configuration shown in FIG. 1 described in 1-U. And in the past, it was as content as spot bathing! The lead wire and the plate-shaped S-terminal are also Iribm! IMti while applying pressure by sandwiching these with a pair of upper and lower welding voltages.
It was permeated by the technical philosophy of doing things.

木兄−は上記の点に鈑みてなされたものでありチップ!
i一体電解コンデンナにおけるコンテンす素子に植設し
たリード線と一極端子などとのfI鈑やリード線などの
9J斬に”レーず光−を使用することによって小形化、
漏れ電流特性の向上1歩留向上中原価低減を図ろうとす
るものである・以下実施例によシ説明する。第3図に示
すようにタンタル粉末にタンタルリード線(21)をa
t股して成形したコンゾンデ素子(22)を貌紳し、−
配リードー(21)帯状の釡Ji4i(23)に溶接す
る。この状膝のままコンゾンデ素子(22滲を化成液に
浸漬し4亀して化成し引上けて硝酸!ンガン溶液を塗布
11貌成し二酸化マンガンを生成する。この化成〜胱成
を纏惠しコンデンサ素子(22)に修復した陽極殻化皮
験および二酸化マンガンを生成し、さらにカーボングラ
ファイト、銀ペーストなどを塗布し表−に陰徳層を形成
する。このようにしたmm&(23)を第4図に正面図
、第5図に髄血図を示すように端子7レーム(24)と
の位W1@係に設置しコンテンす素子(22)の圓配隘
一層に電子アレーA(24)の陰徳フレーム(25)を
ハンダまたFi魯電性撮噛剤で1#:続する。一方コン
デンを素子(22)に11!IW&されたり一ド練(2
1)Fi則配端子フレーム(24)から直角に引き起こ
された111411+7レー^(26)の先端に接する
よう配する。そして第6図に示すように璽紀ツード線(
21)と陽極フレーム(26)との当接点を溶接部(2
))としてレーザ発&器(28]から集光レンズ(29
)を瀘して1記溶接WJ(27)ヘレーザ光線を照射し
溶接する。なおこの溶接時にリード線(21)を同時に
切断することもでき工程を短縮できる効果を有する。
Ki-ni was made with the above points in mind, and it's a tip!
Miniaturization by using laser light for 9J cutting of fI plates and lead wires between lead wires implanted in content elements and single-pole terminals in integrated electrolytic capacitors,
This is intended to reduce cost while improving leakage current characteristics and improving yield.This will be explained below using examples. As shown in Figure 3, attach the tantalum lead wire (21) to the tantalum powder.
Looking at the consonde element (22) molded with a t-crotch, -
Weld the lead wire (21) to the belt-shaped pot Ji4i (23). In this state, the consonde element (22) is immersed in a chemical solution, 4 times heated to form it, then pulled up, and a nitric acid solution is applied 11 to form manganese dioxide. Then, a repaired anode shell and manganese dioxide are formed on the capacitor element (22), and then carbon graphite, silver paste, etc. are applied to form a negative layer on the surface. As shown in the front view in Fig. 4 and the spinal blood diagram in Fig. 5, the electronic array A (24) is installed in the circle of the content element (22) installed in relation to the terminal 7 frame (24) at position W1@. Solder the Yintoku frame (25) and continue with 1#: with the Fi Lu electric photosensitive agent.Meanwhile, the condensed element (22) is 11!
1) Place it in contact with the tip of the 111411+7 wire (26) drawn at right angles from the Fi-law wiring terminal frame (24). Then, as shown in Figure 6, the Aki Tsude Line (
21) and the anode frame (26) at the welding part (21) and the anode frame (26).
)) from the laser emitter & device (28) to the condensing lens (29
) and irradiate the 1st welding WJ (27) with a laser beam to weld. Note that the lead wire (21) can also be cut at the same time during this welding, which has the effect of shortening the process.

このようにしてリード線(21)およびコンデン?素子
(22)陰極層にttm−フレーム(26)および陰極
フレ−^(25)を接続したものはモールド並型(1不
せず)にセットされi路へ取付ける際の取1130)(
31)をWkきWk(32)で成形されたのちに端子7
レーム(24)の第4図に明示されたタイバー(33)
を切断して#Ik樵フレーム(26)と隘−7レー^(
25]との導通を遮断したのち端子フレーム(241の
^−に課電してスクリーニングを行い第7図に示す止謝
細図の如<11(ik7レーム(26)および11m4
17レー!(25)とをuJ&Lチップ型固体亀獅コン
デンVを得るものである。発明者の実験結果について絵
べると木兄−はコンデンサの定格35 V−DC−0,
1〆(寸法帆8■×0.8諺X厚さ0.5 I11角形
嵩子)。
In this way, the lead wire (21) and the capacitor? The device (22) with the cathode layer connected to the ttm-frame (26) and the cathode frame (25) is set in a molded type (without 1), and is attached to the i-way when installing it (1130) (
Terminal 7 is formed after Wk (31) is molded with Wk (32).
Tie bar (33) clearly shown in Figure 4 of frame (24)
Cut the #Ik woodcutter frame (26) and 隘-7 ray ^(
After cutting off the conduction with the terminal frame (241), screening is performed by applying a voltage to the terminal frame (241), and the terminal frame (26) and 11m4 are connected as shown in Fig. 7.
17 leh! (25) and uJ&L chip type solid Kamishi condensate V is obtained. Regarding the inventor's experimental results, Eberu and Kinoe have a capacitor rating of 35 V-DC-0,
1〆 (Dimensions sail 8 x 0.8 x thickness 0.5 I11 square height).

タンタルリード線0625■−×長さ0.6鱈、m子フ
レーム材料#I&厚さ0.21all@t 、リード層
と噛−フレームとのlIr接条件YAGヒーず、電圧6
50vパルス−7膳1.照射速度1回/廖、外装エポキ
シlIt脂、完成品寸法高さ1.2■×長さ3.2■×
−1,61であシ、従来例は定格、外装樹脂は木兄―と
同じ−のを用い、リード線#i0.25■−X長さ1.
8■、端子7レーム材料は42襲ニッケルm厚さ0.2
5閤t1 リード−と−憾フレームとの溶mはスボツ)
浴接、完成品寸法高さ1.7閣t X長さ4.6■tX
111i@2.5+111である。なおリード線長さ1
.8■はスポット浴接を行うのに支障のない寸法であっ
て、これより短くすることはきわめて1麺な寸法である
。この条件にて作製し几コンデン!100−につき漏れ
電流および信頼性をみ几結来は下表のとおりである。
Tantalum lead wire 0625 - x length 0.6mm, frame material #I & thickness 0.21all@t, lIr contact conditions between lead layer and mesh frame YAG heat, voltage 6
50v pulse - 7 meals 1. Irradiation speed: 1 time/liao, exterior epoxy resin, finished product dimensions: height 1.2 x length 3.2 x
-1.61, the conventional example uses the same rating as the exterior resin, and the lead wire #i0.25mm -X length 1.
8■, Terminal 7 frame material is 42 nickel m thickness 0.2
5 t1 The lead and frame are melted)
Bathtub, finished product dimensions Height 1.7cm x Length 4.6cm x
111i@2.5+111. Note that the lead wire length is 1
.. 8cm is a size that does not pose any problem for spot bathing, and making it shorter than this would be an extremely short size. Condensed under these conditions! The results of leakage current and reliability per 100-min are shown in the table below.

なお信頼性は85゛C中に定格電圧(35V)印加して
1000に放置し友ときの60%信頼性水準値である。
The reliability is the 60% reliability level value when the rated voltage (35V) is applied at 85°C and left at 1000C.

以上述べたように本発明によればコンデンf素子(22
)のり一ド@(21)と陽−7レーム(26)との溶)
j 接および―記す−ド[(21)の切断にレーザ光線を用
いることによって従来例のリード線U)とill!極端
子(3)の如き折曲げた溶接部k)を心安としないので
り一ド麹(21)の長さを短くでき小形化が容易になる
し−またコンダン1#″嵩子(22)に機械的ストレス
が全くかからないので漏れ電板特性、伽叡性の鹸れたチ
ップ脂崩体電解コンデン!を得ることができる。さらに
従来例のようにスポット浴接を使用した場合に#i端子
7レーム材料として電気抵抗の小さい1I47にとは使
用できずF・、Niなど比較釣鬼気抵抗値の大きい材料
を使用しな゛ければならないが、これらの材料はコンデ
ン!を1路に組込む場合を想定して表面処理を励してハ
ンダ付は鴨舵な状態にしておかなければならないが、本
光−の一合に#1li11など電気抵払麹が低くそのま
1でハンダ付は容易な材料を使用できする利点があり端
子フレームの表面処置を雀〈ことができる。
As described above, according to the present invention, the capacitor f element (22
)Noriichido@(21) and positive-7 reme(26))
By using a laser beam to cut the j contact and the lead wire [(21), the conventional lead wire U) and ill! Since there is no need to worry about bent welded parts (k) such as the terminal terminal (3), the length of the first mold (21) can be shortened, making it easier to downsize. Since no mechanical stress is applied to the chip, it is possible to obtain a chip fat-disintegrating electrolytic capacitor with excellent leakage plate characteristics and good properties.Furthermore, when spot bath welding is used as in the conventional example, the #i terminal 1I47, which has low electrical resistance, cannot be used as a 7-frame material, and materials with high comparative resistance values such as F and Ni must be used, but these materials can be used when incorporating condensate! into one path. The surface treatment must be carried out assuming that the soldering is in a rough state, but it is easy to solder with the low electric resistance koji such as #1li11 in this case. It has the advantage of being able to use materials that allow for surface treatment of the terminal frame.

【図面の簡単な説明】[Brief explanation of the drawing]

第1[tj従来のチップ漏固体電解コンデンナの正に面
一、第2図は従来のチップIIj廁体電糎コンデンナの
他の例を示す平向図、第3図〜第7図は本発明の夷&鉤
を示すものでls3図はコンデンを素子を餐j4IIi
に溶接した状態を示す正面図、第4凶はコンデンす素子
を端子7レームに接続した伏線を不す止Ek1図、第5
図は同じく一向図、第6図Hayンデンサ襄子に1m4
に7レームと陰−フレームをil!mおよびハンダ付け
した状態を不丁止向図、第7図はチップJJM一体電解
コンデンサの正謝−図である。 (211−−−−リード@  (22+−−−−−−コ
ンデンを素子(233−−−−−曽画板 (243−−
−一端子7レーム(25)−−−一陰慎フレーム (2
6) −−−−Jim 41k yシーム+2フ3.−
−一−浴接部  (281−一−−−レーザ発振器+2
91−−−一集光レンズ (30)(31)−−−一取
一部(32>−−−−−1f脂  (33)−−−−−
一タイバー特許出願人 !ルコン電子株式会社
Figure 2 is a plan view showing another example of the conventional chip leakage solid electrolytic condenser, and Figures 3 to 7 are the plane views of the conventional chip leakage solid electrolytic condenser. The ls3 diagram shows the condensation element and the hook j4IIi.
The front view shows the welded state, the fourth figure shows the foreshadowing that connects the condensing element to the terminal 7 frame, and the fifth figure shows the foreshadowing.
The figure is also Ikko-zu, Figure 6 Hayendensa 1m4
7 frames and yin-frames! Fig. 7 is a normal view of the chip JJM integrated electrolytic capacitor. (211-----Lead @ (22+--------Condenser element (233------Zeng drawing board (243--
-One terminal 7 frames (25)---Ikinshin frame (2
6) ---Jim 41k y seam +2 f3. −
-1-Bath contact (281-1--Laser oscillator +2
91---One converging lens (30)(31)---One part (32>------1f fat (33)------
One tie bar patent applicant! Lecon Electronics Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] (1)コンデン!素子が1するり一ド一の先端下向に該
リード線に対して略直角に&絖した4憾フレームおよび
腕記コンデンナ素子の#II一層に従続した陰l1IL
フレームとを具伽し、該−慎フレームおよびtt*礁7
レームの取智部を除きat脂外験したチップIjII一
体電解コンデンナ。 (2JI#憾7レームおよび111417レームが銅か
らなるこ゛とを特徴とする特許−求の軛曲第(1)狽記
載のチップ漏幽体電解コンデンサ。 (Sコンデン?素子に植設し几す−ド巌を並II4板に
溶接したのち該コンデンナ禦子に化成皮膜、二酸化マン
ガン層、半導体層、隘一層を形成する工程と、該工程の
のちに前記コン′ゾンデ雪子の隘―層に端子7レームの
論憾7レームおよび削紀リード線に鋏す−ド融に対し略
直角に引き起こされた端子フレームの−に7レームをそ
れぞれ当扱する工程と、該工程ののち則配−一層にIl
ji1mフレームをハシダ付けしリード線に一憾フレー
ムなレーザ光騙で浴I&lIならびにリード線を切断す
る工程と、該工程ののちこれらを11脂で成形し端子フ
レームのタイバーを切断してなるチップ型一体電解コン
デン!のl1If[方法・(4)端子フレームが−から
なることを特徴とする特許請求の軛囲第(3〕積に記載
のチップ撤一体電解コンデンナの鵬造方法。 (Sリード給と#I−フレームとの従続およびリード線
の切断なレーず光−で同時に行うことを特徴とする特許
請求の乾囲第(3)IIま友は第(4)項に記載のチッ
プ型囚体電解コンデンナのl1ilfi方法。
(1) Conden! The element is connected to the 4-frame frame which extends downwardly at the tip of the element at approximately right angles to the lead wire, and the shade l1IL which follows #II of the condenser element.
frame, and the frame and tt* reef 7
A chip IjII monolithic electrolytic capacitor that has been tested except for the frame's handle part. (2JI# 7 and 111417 frames are made of copper - a chip leakage electrolytic capacitor as described in Patent No. 1). After welding the dowel to the ordinary II4 board, a process of forming a chemical conversion film, a manganese dioxide layer, a semiconductor layer, and a bottom layer on the condenser wire, and after this step, a terminal 7 is attached to the bottom layer of the condenser wire. Discussion of the 7 rams and the process of handling the 7 rams respectively on the terminal frame which is raised approximately perpendicular to the lead wire, and after this process, the arrangement - further Il.
The process of attaching the 1m frame to the lead wire and cutting the bath I & lI and the lead wire using a laser light beam, and after this process, molding these with 11 resin and cutting the tie bar of the terminal frame to make a chip type. Integrated electrolytic condenser! l1If [Method (4) Method for manufacturing an electrolytic capacitor with chip removal according to product No. (3) of the patent claim, characterized in that the terminal frame consists of - (S lead supply and #I- A chip-type prison electrolytic capacitor according to paragraph (4), characterized in that the laser light is used to simultaneously connect the frame and cut the lead wires. l1ilfi method.
JP15799581A 1981-10-02 1981-10-02 Chip solid electrolytic condenser and method of producing same Pending JPS5858721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15799581A JPS5858721A (en) 1981-10-02 1981-10-02 Chip solid electrolytic condenser and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15799581A JPS5858721A (en) 1981-10-02 1981-10-02 Chip solid electrolytic condenser and method of producing same

Publications (1)

Publication Number Publication Date
JPS5858721A true JPS5858721A (en) 1983-04-07

Family

ID=15661935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15799581A Pending JPS5858721A (en) 1981-10-02 1981-10-02 Chip solid electrolytic condenser and method of producing same

Country Status (1)

Country Link
JP (1) JPS5858721A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021517A (en) * 1983-07-15 1985-02-02 日本電気株式会社 Chip-shaped solid electrolytic condenser and method of producing same
JPS6411530U (en) * 1987-07-10 1989-01-20
JP2002198260A (en) * 2000-12-26 2002-07-12 Nippon Chemicon Corp Method of manufacturing chip type solid electrolytic capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021517A (en) * 1983-07-15 1985-02-02 日本電気株式会社 Chip-shaped solid electrolytic condenser and method of producing same
JPS6411530U (en) * 1987-07-10 1989-01-20
JP2002198260A (en) * 2000-12-26 2002-07-12 Nippon Chemicon Corp Method of manufacturing chip type solid electrolytic capacitor
JP4517507B2 (en) * 2000-12-26 2010-08-04 日本ケミコン株式会社 Manufacturing method of chip-type solid electrolytic capacitor

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