JPS5857761A - 光半導体装置 - Google Patents

光半導体装置

Info

Publication number
JPS5857761A
JPS5857761A JP56156283A JP15628381A JPS5857761A JP S5857761 A JPS5857761 A JP S5857761A JP 56156283 A JP56156283 A JP 56156283A JP 15628381 A JP15628381 A JP 15628381A JP S5857761 A JPS5857761 A JP S5857761A
Authority
JP
Japan
Prior art keywords
layer
junction
type
semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56156283A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410233B2 (enrdf_load_stackoverflow
Inventor
Hirobumi Ouchi
博文 大内
Hiroshi Matsuda
広志 松田
Makoto Morioka
誠 森岡
Masahiko Kawada
河田　雅彦
Kazuhiro Kurata
倉田　一宏
Yasushi Koga
古賀　康史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56156283A priority Critical patent/JPS5857761A/ja
Priority to KR8204346A priority patent/KR900000074B1/ko
Priority to DE8282109103T priority patent/DE3277353D1/de
Priority to EP82109103A priority patent/EP0076495B1/en
Publication of JPS5857761A publication Critical patent/JPS5857761A/ja
Priority to US06/880,118 priority patent/US4740819A/en
Publication of JPH0410233B2 publication Critical patent/JPH0410233B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP56156283A 1981-10-02 1981-10-02 光半導体装置 Granted JPS5857761A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56156283A JPS5857761A (ja) 1981-10-02 1981-10-02 光半導体装置
KR8204346A KR900000074B1 (ko) 1981-10-02 1982-09-27 광 검출용 반도체장치
DE8282109103T DE3277353D1 (en) 1981-10-02 1982-10-01 Photodiode
EP82109103A EP0076495B1 (en) 1981-10-02 1982-10-01 Photodiode
US06/880,118 US4740819A (en) 1981-10-02 1986-06-30 Photo semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56156283A JPS5857761A (ja) 1981-10-02 1981-10-02 光半導体装置

Publications (2)

Publication Number Publication Date
JPS5857761A true JPS5857761A (ja) 1983-04-06
JPH0410233B2 JPH0410233B2 (enrdf_load_stackoverflow) 1992-02-24

Family

ID=15624428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56156283A Granted JPS5857761A (ja) 1981-10-02 1981-10-02 光半導体装置

Country Status (1)

Country Link
JP (1) JPS5857761A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182850A (ja) * 1987-01-24 1988-07-28 Agency Of Ind Science & Technol 光半導体装置の製造方法
JPH01135471A (ja) * 1987-11-19 1989-05-29 Okuma Mach Works Ltd 数値制御研削盤における定角ドレス方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182850A (ja) * 1987-01-24 1988-07-28 Agency Of Ind Science & Technol 光半導体装置の製造方法
JPH01135471A (ja) * 1987-11-19 1989-05-29 Okuma Mach Works Ltd 数値制御研削盤における定角ドレス方法

Also Published As

Publication number Publication date
JPH0410233B2 (enrdf_load_stackoverflow) 1992-02-24

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