JPS5856481A - ゲルマニウム受光素子の製造方法 - Google Patents

ゲルマニウム受光素子の製造方法

Info

Publication number
JPS5856481A
JPS5856481A JP56154984A JP15498481A JPS5856481A JP S5856481 A JPS5856481 A JP S5856481A JP 56154984 A JP56154984 A JP 56154984A JP 15498481 A JP15498481 A JP 15498481A JP S5856481 A JPS5856481 A JP S5856481A
Authority
JP
Japan
Prior art keywords
layer
type
guard ring
mask
apd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56154984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259903B2 (OSRAM
Inventor
Takashi Mikawa
孝 三川
Katsuji Honma
本間　勝治
Shuzo Kagawa
修三 香川
Takao Kaneda
隆夫 金田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56154984A priority Critical patent/JPS5856481A/ja
Priority to DE8282305104T priority patent/DE3278660D1/de
Priority to EP82305104A priority patent/EP0076143B1/en
Priority to CA000412427A priority patent/CA1195414A/en
Publication of JPS5856481A publication Critical patent/JPS5856481A/ja
Publication of JPS6259903B2 publication Critical patent/JPS6259903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP56154984A 1981-09-30 1981-09-30 ゲルマニウム受光素子の製造方法 Granted JPS5856481A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56154984A JPS5856481A (ja) 1981-09-30 1981-09-30 ゲルマニウム受光素子の製造方法
DE8282305104T DE3278660D1 (en) 1981-09-30 1982-09-28 Avalanche photodiode
EP82305104A EP0076143B1 (en) 1981-09-30 1982-09-28 Avalanche photodiode
CA000412427A CA1195414A (en) 1981-09-30 1982-09-29 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154984A JPS5856481A (ja) 1981-09-30 1981-09-30 ゲルマニウム受光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5856481A true JPS5856481A (ja) 1983-04-04
JPS6259903B2 JPS6259903B2 (OSRAM) 1987-12-14

Family

ID=15596166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154984A Granted JPS5856481A (ja) 1981-09-30 1981-09-30 ゲルマニウム受光素子の製造方法

Country Status (4)

Country Link
EP (1) EP0076143B1 (OSRAM)
JP (1) JPS5856481A (OSRAM)
CA (1) CA1195414A (OSRAM)
DE (1) DE3278660D1 (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
CA1301895C (en) * 1989-01-12 1992-05-26 Robert J. Mcintyre Silicon avalanche photodiode with low multiplication noise
GB8913198D0 (en) * 1989-06-08 1989-07-26 British Telecomm Guard ring structure
US5477649A (en) * 1993-04-30 1995-12-26 Airtite Contractors Inc. Raised floor cable trough system
WO2004102680A1 (en) * 2003-05-14 2004-11-25 University College Cork - National University Of Ireland, Cork A photodiode
CN110098270B (zh) * 2019-04-18 2021-04-23 中国科学技术大学 雪崩光电二极管扩散结构的制备方法及二极管扩散结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260579A (en) * 1975-11-11 1977-05-19 Philips Nv Method of producing semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260579A (en) * 1975-11-11 1977-05-19 Philips Nv Method of producing semiconductor device

Also Published As

Publication number Publication date
EP0076143B1 (en) 1988-06-08
JPS6259903B2 (OSRAM) 1987-12-14
EP0076143A2 (en) 1983-04-06
DE3278660D1 (en) 1988-07-14
CA1195414A (en) 1985-10-15
EP0076143A3 (en) 1984-08-29

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