JPS5855327A - 半導体材料及びその製造方法 - Google Patents

半導体材料及びその製造方法

Info

Publication number
JPS5855327A
JPS5855327A JP56151423A JP15142381A JPS5855327A JP S5855327 A JPS5855327 A JP S5855327A JP 56151423 A JP56151423 A JP 56151423A JP 15142381 A JP15142381 A JP 15142381A JP S5855327 A JPS5855327 A JP S5855327A
Authority
JP
Japan
Prior art keywords
silicon
aluminum
layer
semiconductor
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56151423A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0239087B2 (Sortimente
Inventor
Shigeru Sato
滋 佐藤
Masanari Shindo
新藤　昌成
Tatsuo Oota
達男 太田
Tetsuo Shima
徹男 嶋
Isao Myokan
明官　功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP56151423A priority Critical patent/JPS5855327A/ja
Priority to PCT/JP1982/000386 priority patent/WO1983001151A1/ja
Priority to DE823249030T priority patent/DE3249030T1/de
Publication of JPS5855327A publication Critical patent/JPS5855327A/ja
Publication of JPH0239087B2 publication Critical patent/JPH0239087B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP56151423A 1981-09-26 1981-09-26 半導体材料及びその製造方法 Granted JPS5855327A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56151423A JPS5855327A (ja) 1981-09-26 1981-09-26 半導体材料及びその製造方法
PCT/JP1982/000386 WO1983001151A1 (fr) 1981-09-26 1982-09-25 Materiau semiconducteur et son procede de production
DE823249030T DE3249030T1 (de) 1981-09-26 1982-09-25 Halbleitermaterial und verfahren zu dessen herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151423A JPS5855327A (ja) 1981-09-26 1981-09-26 半導体材料及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5855327A true JPS5855327A (ja) 1983-04-01
JPH0239087B2 JPH0239087B2 (Sortimente) 1990-09-04

Family

ID=15518290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56151423A Granted JPS5855327A (ja) 1981-09-26 1981-09-26 半導体材料及びその製造方法

Country Status (2)

Country Link
JP (1) JPS5855327A (Sortimente)
WO (1) WO1983001151A1 (Sortimente)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021380A (ja) * 1983-07-18 1985-02-02 Nippon Telegr & Teleph Corp <Ntt> 非晶質シリコン薄膜の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678413A (en) * 1979-11-27 1981-06-27 Konishiroku Photo Ind Co Ltd Preparation of amorphous silicon
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56104477A (en) * 1980-01-16 1981-08-20 Energy Conversion Devices Inc Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678413A (en) * 1979-11-27 1981-06-27 Konishiroku Photo Ind Co Ltd Preparation of amorphous silicon
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021380A (ja) * 1983-07-18 1985-02-02 Nippon Telegr & Teleph Corp <Ntt> 非晶質シリコン薄膜の作製方法

Also Published As

Publication number Publication date
JPH0239087B2 (Sortimente) 1990-09-04
WO1983001151A1 (fr) 1983-03-31

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