JPS5853849A - Semiconductor device and preparation thereof - Google Patents

Abstract

PURPOSE:To provide a protection film on the chip surface by placing a resin film in the thickness of 75mum with apertures on the semiconductor chip surface and dropping the resin liquid to said apertures. CONSTITUTION:The polyimide film 3a with apertures 6 in the thickness of 125mum is placed on the Si chip 1 covering the cell region and the polyimide solution 5 is dropped into said apertures 6 for the purpose of coating. The polyimide 5a also penetrates into the lower part of film 3a and plays a roll of bonding agent for the chip 1. In this method, water generated when the polyimide is hardened, remaining solvent and air are exhausted 7 from the apertures 6, the periphery of ship is coated with the polyimide in the thickness of 125mum and thereby a soft error by the alpha ray can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device and a method for manufacturing the same, and more specifically to a structure having a resin layer on the surface of a semiconductor chip and a method for manufacturing the same.

Semiconductor chips are sealed in packages to protect them from mechanical damage or to protect them from external atmosphere. However, in this parable, surplus electrons are generated within the semiconductor chip due to alpha ray irradiation from the cage material.
There is a problem of causing soft errors such as malfunctions due to fluctuations in the amount of charge in memory cells. Conventionally, in order to prevent α-ray irradiation, the semiconductor chip f surface as shown in FIGS. coaching will be conducted.

According to Figure 1, the polyimide solution is on the silicon chip f1! method), a polyamide adhesive layer 2 is formed, and the adhesive layer forms an I-lined film 3a.
is glued.

Due to its dense three-dimensional structure, polyimide absorbs α-rays and prevents irradiation of α-rays from arm cage materials, etc.
It has heat resistance of about ℃. However, when using a polyimide film, since the adhesive layer 2 at the center under the cough film 3a is not cured, solvents, moisture, etc. may remain below the cough film, resulting in poor adhesion or electrostatic sinking. In addition to the method shown in Figure 1, there is a method for coating the surface of silicon chip, f1, in which 50% of Iliimide solution is coated on the silicon chip, as shown in Figure 2.
There is a method in which the liquid is dispensed by a dispenser 4 using a drop method. Such a dork! Depending on the method, the coated polyimide resin layer 5a may have a thickness K of 40 to 50 μm at the peripheral edge, but may be as thin as 75 μm, which is necessary for α-ray prevention, and may be as thin as 75 μm, which is necessary for α-ray prevention. Therefore, it is an object of the present invention to improve the above-mentioned drawbacks and provide a method for surface coating dead and living conductor chips.

Another object of the present invention is to provide improved semiconductor chip, surface and coating structures.

An object of the present invention is to provide a method for coating the surface of a semiconductor thio 1 with a resin, in which at least one hole is provided.
This is achieved by a method for manufacturing a semiconductor device, which comprises placing a resin film having a thickness of 5 μm or more on the surface of the semiconductor chip 1, and dropping a resin solution onto the semiconductor chip to form a resin layer on the surface of the semiconductor chip. .

Furthermore, an object of the present invention is to provide a resin film having a thickness of 75 μm or more and having at least one hole on the surface of the semiconductor chip.
This can be achieved by a semiconductor device characterized by having a resin layer provided in the scissors hole and having a thickness of 975 μm or more.

The present invention will be explained below based on examples. FIGS. 3 to 5 are explanatory diagrams of rounding for explaining an embodiment of the present invention.

First, as shown in FIG. 3, an I-type film 3a having a thickness of 125 μm and having a rectangular hole 6 and surrounding the semiconductor cell region (8 in FIG. 5) is placed on the silicon chip 1. 6, the polyind solution 5 is dropped and coated using a dispenser 4 using a known drop method (Fig. 4).
It also penetrates below the 4-lead film 3a and the film 3
The silicone of a acts as an adhesive for fl,
By this method, moisture, residual solvent, air, etc. generated when the TFL re-build is cured are discharged from hole 6 (arrow 7
), and the peripheral portion of f is coated with a film thickness of 125 μm secured for the film 3&. FIG. 5 is a plan view of FIG. 4, and at least the cell area 8 (shaded area) of the nine memories disposed in the silicon chip y7''l is made of a polyimide film 31 and a four-layer imide resin layer of the film 5 and 6. 5a.

The hole that the 4-limide film 3a has is not limited to the rectangular shape 6, but may be one circular hole 9 as shown in FIG. 6 or a plurality of circular holes 10 as shown in FIG.

Of course, polygonal or elliptical shapes other than quadrangles may also be used; however, the method of the present invention can also be used with resins such as silicone resin and Teflon resin when using I-imide resin as the coating material, as long as they are acceptable in terms of heat resistance. Ru. In addition, the thickness of the resin film should be 75μ or more for rounding to prevent alpha rays, and the resin layer formed by dropping the resin solvent should also have an appropriate dropping amount at least 75μ thick at the corner. .

The surface structure of the semiconductor chip formed according to the present invention as described above, that is, the resin film having a thickness of 75 μm or more with at least one hole, and the coating having a structure in which the hole has a thickness of 75 mm has the above-mentioned advantages. It is something that you have. Such a structure is created by dropping a resin solvent onto the surface of a semiconductor chip using a drop method, and then pasting a resin film with holes while the surface of the resin layer formed by the drop is slightly sticky. can also be formed.

As explained above, according to the present invention, the surrounding area of the Chig is coated with a resin film, and since the film has holes, it is dropped into the holes, and the curing conditions of the Kuju WIf agent are adjusted to a storm (good adhesion). Moreover, a good semiconductor chip surface coating that can improve soft errors caused by α rays can be obtained.

[Brief explanation of the drawing]

1 and 2 are schematic cross-sectional views showing conventional embodiments, and FIGS. FIG. 7 shows an example of a resin film in which holes are formed according to the present invention. DESCRIPTION OF SYMBOLS 1... Silicone resin group, 2... Polyimide adhesive layer, 31... Polyimide film, 4... Dispenser, 5... 4 Riimide solution, 5m... Polyimide resin layer, 6... Large polyimide film, 7... Exhaust gas, Death... Cell area% 9.10... Hole. Patent Applicant: Fujitsu Limited tf

Claims (1)

[Scope of Claims] A semiconductor device characterized by having a resin layer with a thickness of 75 μm or more provided in the hole. 2. In the method of forming a resin layer on the semiconductor hole 111, a resin film having a thickness of 175 μm or more and having at least one hole is placed on the surface of the conductor hole 111, and a resin solution is poured into the hole. 1. A method of manufacturing a semiconductor device, comprising a step of dropping the resin solution and curing the resin solution.