JPS5852837A - Bonding device - Google Patents

Bonding device

Info

Publication number
JPS5852837A
JPS5852837A JP56150982A JP15098281A JPS5852837A JP S5852837 A JPS5852837 A JP S5852837A JP 56150982 A JP56150982 A JP 56150982A JP 15098281 A JP15098281 A JP 15098281A JP S5852837 A JPS5852837 A JP S5852837A
Authority
JP
Japan
Prior art keywords
bonding
semiconductor chip
filter
protective film
television camera
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56150982A
Other languages
Japanese (ja)
Inventor
Shuji Kanamori
金森　修二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56150982A priority Critical patent/JPS5852837A/en
Publication of JPS5852837A publication Critical patent/JPS5852837A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05555—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To perform correct bonding of fine metal wires recognizing correctly bonding pads of a semiconductor chip by a method wherein a filter is provided in space between a television camera and the semiconductor chip. CONSTITUTION:The filter 30 is provided in space between the semiconductor chip 10 and the television camera 20. Because wave length of a light source in the television camera is fixed, light to return to the camera reflecting on the surface of metal has various angles owing to interference of light or refraction in a protective film to be generated by unevenness of film thickness of the protective film. The filter 30 transmits light reflected from the bonding pads, while light passed through the protective film is not transmitted. Therefore the television camera 20 recognizes only the bonding pads 7, 8 correctly. Thus bonding at the correct position is performed. Because the bonding pads on the semiconductor chip can be recognized correctly, and bonding at the correct position can be performed, and because the bonding device to enhance the good articles obtaining ratio in the manufacturing process can be obtained, the effect thereof is made remarkable.

Description

【発明の詳細な説明】 本発明はステムまたはリードフレーム等に固着された半
導体チップの表面に形成された金属配線層とステムオた
はり一ドフレームのリードとを金属細線で接続するポン
ディグ装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding device for connecting a metal wiring layer formed on the surface of a semiconductor chip fixed to a stem or a lead frame with a lead of a stem or lead frame using a thin metal wire.

従来、半導体チップをケースに組立てるに際し。Conventionally, when assembling semiconductor chips into a case.

金属配線層をもつた半導体チップの主表面に吸着ノズル
をあて真空吸着し、半導体チップを所定の位置に動かし
てステム又はリードフレーム等にマウｙ）ＬｔＬかる後
半導体チップのポンディングパッド部にＡｕ、Ａ＃等の
金属線をボンディングして結線している。半導体チップ
の表面はポンディングパッドの金属層部分以外はＣＶＤ
＠ｔｉｃよる保護膜または硬化ポリインド膜等て覆われ
ている。A suction nozzle is applied to the main surface of a semiconductor chip having a metal wiring layer for vacuum suction, and the semiconductor chip is moved to a predetermined position and attached to a stem or lead frame. , A#, etc. are connected by bonding. The surface of the semiconductor chip is CVD except for the metal layer of the bonding pad.
It is covered with @tic protective film or hardened polyind film.

第１図（１）　、　（ｂ）は従来の半導体チップの一例
の平面図およびＡ−人′断面図である。FIGS. 1(1) and 1(b) are a plan view and a cross-sectional view of an example of a conventional semiconductor chip.

半導体基板１に酸化物層２を設けて窓あけし、不純物を
拡散して工建、タ３．ベース４をそれぞれ形成し、金属
配線層５．６とこれにつながるポンディングパッド７．
８を形成して、半導体チップ１０を作る。ポンディング
パッド７．８は半導体チップを容器やリードフレームＫ
ＩＥ！ｊ付けＬ外部導出リードとの間に金属細線で電気
的接続をとる丸めに、金属細線を圧着せしめる領域であ
る。3. An oxide layer 2 is provided on a semiconductor substrate 1, a window is opened, and impurities are diffused to form a structure. A base 4 is formed respectively, and a metal wiring layer 5.6 and a bonding pad 7.6 connected thereto are formed.
8 to form a semiconductor chip 10. The bonding pads 7 and 8 are used to attach semiconductor chips to containers or lead frames.
IE! This is an area where a thin metal wire is crimped onto the round part where the thin metal wire is used to establish an electrical connection between the j-attached L and the external lead.

さらに半導体チップ１０をステムやリードフレームに取
り付ける工程で半導体チップを真空吸着するための吸着
ノズルによる金属配線の短絡を防ぐためＫＣＶＤ法によ
る保護膜又は硬化ポリイミド膜等の保護膜９をボンディ
ンダバッド７，８以外の半導体チャ１表面に形成する。Furthermore, in the process of attaching the semiconductor chip 10 to a stem or lead frame, a protective film 9 such as a protective film formed by KCVD method or a hardened polyimide film is applied to the bonder pad 7 in order to prevent short-circuiting of the metal wiring due to the suction nozzle for vacuum suctioning the semiconductor chip 10. , 8 are formed on the surface of the semiconductor cha 1.

このような構造の半導体チップを自動ボンディング装置
のテレビジ璽／カメラで観察すると１反射率の差から露
出しているボンディングパッド７゜８のみが検出される
。自動ボンディング装置は。When a semiconductor chip having such a structure is observed with a television screen/camera of an automatic bonding apparatus, only the exposed bonding pads 7.8 are detected due to a difference in reflectance of 1. Automatic bonding equipment.

内蔵しているコ／ピユータ等によシテレビジ、／カメラ
上のボンディングパッドのＸ−Ｙ座標を自動検索し、金
属細線をボ／ディ／グパ、ドア、８に接続する。Automatically search the X-Y coordinates of the bonding pad on the TV/camera using the built-in computer/computer, etc., and connect the thin metal wire to the body/glue pad, door, 8.

しかしながら、テレビジｗ７カメラの光源の波長が一定
であるため、保護膜９の膜厚ばらつきによシ光の干渉や
保護膜での屈折により金属表面で反射してカメラに戻り
てくる光は種々の角度をなしている。従って、本来は第
１図（匍に実線で囲まれる丸いポンディングパッド７．
８のみが認識されるべきものが、第２図に示すような形
に認識されることがらる。そうすると正確なポンディン
グパッドの座標が検出されないから、自動ボンディング
装置は第３図に示すように、金属細線１１を保護膜９に
半分ひっかかったような状態で、あるいは保護膜９の上
に全部乗った状態でボンディングしてしまうことがある
。金属−線１１のボッ１４フフ部の一部が保護膜９にひ
っかかつたときは充分な密度強度が得られず、次工程以
降で不良となるし、金属細線１１が全面的に保護膜９の
上に乗ってしまうと電気的導通が得られなく、直ちに不
良となってしまう。However, since the wavelength of the light source of the TV W7 camera is constant, the light reflected by the metal surface and returned to the camera due to variations in the film thickness of the protective film 9 due to light interference and refraction at the protective film varies. It forms an angle. Therefore, originally the round pounding pad 7.
8 should be recognized, but it is recognized in the form shown in FIG. In this case, the exact coordinates of the bonding pad will not be detected, so the automatic bonding device will not be able to detect the precise bonding pad coordinates, so the automatic bonding device will not be able to detect the exact bonding pad coordinates, so the automatic bonding device will not be able to detect the exact bonding pad coordinates. You may end up bonding in a state where the If a part of the bulge 14 of the metal wire 11 gets caught in the protective film 9, sufficient density strength will not be obtained and it will be defective in the next process. If it gets on top of it, electrical continuity will not be obtained and it will immediately become defective.

このように従来のボンディング装置では半導体チップの
ポンディングパッドをｇｇ＊識することがあり、その丸
め良品率を低下させるという欠点があった。As described above, in the conventional bonding apparatus, the bonding pads of the semiconductor chip may be recognized as gg*, which has the drawback of reducing the rounding rate of non-defective products.

本発明は上記欠点を除き、半導体チップ上に設けられた
ボンディングパッドを正しく認識し、正確な金属細線ボ
ンディングを行うことができ、工程良品率を向上せしめ
るボンディング装置を提供するものである。The present invention eliminates the above-mentioned drawbacks and provides a bonding apparatus that can correctly recognize bonding pads provided on a semiconductor chip, perform accurate thin metal wire bonding, and improve the process yield rate.

本発明のボンディング装置は、ステムあるいはリードフ
レーム等に固着され、表面にポンディングパッドが露出
し、該ボンディングバッド以外は絶縁物層で覆われてい
る半導体チップの前記ポンディングパッドの位置をテレ
ビジ曽ンカメラで認識し、前記ポンディングパッドと前
記ステムらるいはリードフレーム等のリードとを金属細
線で接続するボンディング装置において、前記絶縁柳眉
と相補型の透過率曲線を有するフィルタを前記テレビジ
冒ンカメラと前記半導体チップとの間に設けたことを特
徴として構成される。The bonding device of the present invention locates the position of the bonding pad on a semiconductor chip which is fixed to a stem or a lead frame, etc., has a bonding pad exposed on the surface, and is covered with an insulating layer except for the bonding pad. In a bonding device that connects the bonding pad and the stem loop or a lead of a lead frame or the like with a thin metal wire, a filter having a transmittance curve complementary to the insulating wire is connected to the television camera. The structure is characterized in that it is provided between the semiconductor chip and the semiconductor chip.

本発明の実施例圧ついて図面を用いて説明する。Embodiments of the present invention will be described with reference to the drawings.

第４図は本発明の一実施例を説明するための斜視図であ
る。FIG. 4 is a perspective view for explaining one embodiment of the present invention.

半導体チ、グｌＯとテレビシ冒／カメラ２０との間にフ
ィルタ３０を設ける。A filter 30 is provided between the semiconductor chips and the television set/camera 20.

第５図は保護膜とフィルタの透過率及び金属の反射率の
一例を示す曲線図である。FIG. 5 is a curve diagram showing an example of the transmittance of a protective film and a filter, and the reflectance of metal.

第５図において１曲線４１は保護膜の透過率。In FIG. 5, a curve 41 represents the transmittance of the protective film.

曲＠４２はフィルタ３０の透過率、−９４８はポンディ
ングパッドを形成する金属の反射率を示す。The song @42 shows the transmittance of the filter 30, and -948 shows the reflectance of the metal forming the bonding pad.

フィルタ３０の透過率曲線４２は保護膜９の透過率−＠
４２と相補型である。フィルタ３０はポンディングパッ
ドから反射してくる光は透過させるが、保護膜９を通っ
てくる光は通さない。従って。The transmittance curve 42 of the filter 30 is the transmittance of the protective film 9 -@
It is complementary to 42. The filter 30 transmits the light reflected from the bonding pad, but does not transmit the light that passes through the protective film 9. Therefore.

テレビジ璽ンカメラ２０はボンディングバッド７゜８の
みを正しく認識することになる。従って、正しい位置で
のボンディングが行なわれる。The television camera 20 will correctly recognize only the bonding pad 7.8. Therefore, bonding is performed at the correct position.

以上詳細に説明し喪ように１本発明によれば、半導体チ
ップ上のボンディングパッドが正しく認識でき、正しい
位置でのボンディングができ、工程良品率を向上させる
ボンディング装置が得られるのでその効果は大きい。As explained in detail above, the present invention has great effects because it provides a bonding device that can correctly recognize bonding pads on a semiconductor chip, perform bonding at the correct position, and improve the yield rate of non-defective products in the process. .

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（１）　、　（ｂ）は従来の半導体チップの一例
の平面図および断面図、第２図はテレビジ冒／カメラて
誤認識されたポンディングパッドの一例の平面図、第３
図はずれた位置で金属細線がボンディングされた半導体
チップの一例の断面図、第４図は本発明の一実施例の斜
視図、第５図は保護膜とフィルタの透過率及び金属の反
射率の一例を示す曲線図である。 １・・・・・・半導体基板％　２・・・・・・酸化物層
、３・・・・・・エミッタ、４０００３．ベース、５，
６・・・・・・金属配線層。 ７．８・・・・・・ポンディングパッド、１０・・・・
・・半導体チップ、１１・・・・・・金属線＠、２０・
・・・・・テレビジ曹ンカメラ、３０・・・・・・フィ
ルタ、４１・・・・・・保護膜の透過率曲線、４２・・
・・・・フィルタの透過率曲線、４３・・・・・・金属
の反射率曲線。 （θ） （ｂ） 第１閉 第２図Figures 1 (1) and (b) are a plan view and a sectional view of an example of a conventional semiconductor chip, Figure 2 is a plan view of an example of a bonding pad that was misrecognized by a TV/camera, and Figure 3
Figure 4 is a cross-sectional view of an example of a semiconductor chip with thin metal wires bonded at off-center positions, Figure 4 is a perspective view of an embodiment of the present invention, and Figure 5 is a diagram showing the transmittance of the protective film and filter and the reflectance of the metal. It is a curve diagram showing an example. 1... Semiconductor substrate % 2... Oxide layer, 3... Emitter, 40003. base, 5,
6...Metal wiring layer. 7.8...Ponding pad, 10...
・・Semiconductor chip, 11・・Metal wire @, 20・
... Television camera, 30 ... Filter, 41 ... Transmittance curve of protective film, 42 ...
...Transmittance curve of filter, 43...Reflectance curve of metal. (θ) (b) 1st closed Fig. 2

Claims (1)

【特許請求の範囲】 ステムあるいはリードフレーム等に固着され。 表面にポンディングパッドが露出し、該ポンディングパ
ッド以外は絶縁物層で覆われている半導体チップの前記
ポンディングパッドの位置をテレビジーンカメラで腎臓
し、前記ポンディングパッドと前記ステムあるいはリー
ドフレーム等のリードとを金属細線で接続するボンディ
ング装置において、前記絶縁物層と相補型の透過率１ｌ
ＩＩｉ！を有するフィルタを前記テレビジ冒ンカメラと
前記半導体チップとの間に設けたことを特徴とするボン
ディング装置。[Claims] Fixed to a stem, lead frame, etc. The bonding pad is exposed on the surface of the semiconductor chip, and the parts other than the bonding pad are covered with an insulating layer.The position of the bonding pad of the semiconductor chip is observed with a television camera, and the bonding pad and the stem or lead frame are In a bonding device that connects leads such as
IIi! A bonding apparatus characterized in that a filter having a filter is provided between the television camera and the semiconductor chip.
JP56150982A 1981-09-24 1981-09-24 Bonding device Pending JPS5852837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150982A JPS5852837A (en) 1981-09-24 1981-09-24 Bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150982A JPS5852837A (en) 1981-09-24 1981-09-24 Bonding device

Publications (1)

Publication Number Publication Date
JPS5852837A true JPS5852837A (en) 1983-03-29

Family

ID=15508695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150982A Pending JPS5852837A (en) 1981-09-24 1981-09-24 Bonding device

Country Status (1)

Country Link
JP (1) JPS5852837A (en)

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