JPS5848921A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5848921A JPS5848921A JP56147203A JP14720381A JPS5848921A JP S5848921 A JPS5848921 A JP S5848921A JP 56147203 A JP56147203 A JP 56147203A JP 14720381 A JP14720381 A JP 14720381A JP S5848921 A JPS5848921 A JP S5848921A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- reinforcing material
- glass
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は基板保護用補助材例えば８ｉと基板との接着
材に多成分系ガラスを用いてベベル面との保護膜を同一
に形成するようにした半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention is a method for manufacturing a semiconductor device in which a multi-component glass is used as an adhesive between an auxiliary material for protecting a substrate, such as 8i, and a substrate, and a protective film is formed on the beveled surface in the same manner. Regarding.
まず、第１図に従来の代表的な半導体装置の断面を示す
。図において、１１はＰＮ接合を有する半導体基板であ
る。そして、この半導体基板１１に機械的強度を増すた
めにＰＨ１側に接着材１２を用いて基板１１と補強材１
３とを接着している。一般的に接着材１２としてはＡＩ
が多く用いられ、補強材１３としてはタングステンやモ
リｆｆ”ンが用いられる。ところで、この補強材１３は
Ｐ層の電極も兼ねている。そして、基板１１と補強材Ｉ
Ｊが接着された後基板１１の側面に５ａｎｄ Ｂｌａｓ
ｔ法等でベベル面が形成され、表面処理を行った後Ｅｎ
ｃａｐ剤等で表面保護膜１５が形成される。最近では高
耐圧化、高信頼性化、大容量化の要求に沿って大口径化
されている。しかし、従来の方法では基板１１と補強材
１３との熱膨張係数の差に依シ熱応力が基板１１内部に
生じる。この熱応力は基板１１のクラック、耐圧の低下
、リーク電流の増大等の原因となる。また、補強材１３
として用いられるタングステン、モリブデンはコストも
高く、ペレットのコストの１／２〜１／３を占めている
。First, FIG. 1 shows a cross section of a typical conventional semiconductor device. In the figure, 11 is a semiconductor substrate having a PN junction. Then, in order to increase the mechanical strength of this semiconductor substrate 11, an adhesive 12 is used on the PH1 side to bond the substrate 11 and the reinforcing material 1.
3 are glued together. Generally, the adhesive material 12 is AI.
is often used, and tungsten or molybdenum is used as the reinforcing material 13. By the way, this reinforcing material 13 also serves as an electrode for the P layer.
5and Blas on the side of the board 11 after J is glued.
A beveled surface is formed using the t method, etc., and after surface treatment, En
A surface protective film 15 is formed using a cap agent or the like. Recently, the diameter has been increased to meet the demands for higher voltage resistance, higher reliability, and larger capacity. However, in the conventional method, thermal stress is generated inside the substrate 11 due to the difference in thermal expansion coefficient between the substrate 11 and the reinforcing material 13. This thermal stress causes cracks in the substrate 11, a decrease in breakdown voltage, an increase in leakage current, and the like. In addition, the reinforcing material 13
The cost of tungsten and molybdenum used as pellets is high, accounting for 1/2 to 1/3 of the cost of pellets.
この発明は上記の点に鑑みてなされたものでその目的は
基板保護用補強材と基板との接着材に多成分系ガラスを
用いてベベル面との保護膜を同一に形成するようにして
基板のクラック、耐圧の低下、リーク電流の増大を防止
することができる半導体装置の製造方法を提供すること
にある。This invention has been made in view of the above points, and its purpose is to form a protective film on the beveled surface of the substrate by using multi-component glass as an adhesive between the reinforcing material for protecting the substrate and the substrate. An object of the present invention is to provide a method for manufacturing a semiconductor device that can prevent cracks, a decrease in breakdown voltage, and an increase in leakage current.
以下、図面を参照してこの発明の一実施例を説明する。Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第２図囚ないしくＱはこの発明に係る半導体装置の製造
方法の各工程における断面図を示している。第２図に）
においてＰＮ接合を有する半導体基板２１の側面はベベ
ル加工されている。また、２２は酸化膜で、Ｐ層側の酸
化膜２３は選択的に酸化膜が除去されている。次に、第
２図（Ｂ）Ｋ示すように電気泳動法によシ多成分系ガラ
ス２４及び２５を附着させる。ここで、半導体基板２１
の側面は附着された多成分系が２ス２４は表面保！ｉ！
膜として、半導体基板２ノのＰ層側の多成分系がラス２
５は接着剤として用いられる。次に、第２図Ｃ）に示す
ように補強材２６としてＳｌが用いられておシ、この補
強材２６は後の工程で電極数シの為にドーナツ状に補強
材２３内部に穴孔があけられてお）、その補強材２３の
直径は８１基板２１の直径よシも大きい。この補助材２
３と８１基板２１はベベル面の多成分系ガラスの焼成工
程に於てＰ層側にもガラス膜が有るので同時に接着され
る。FIGS. 2 to 2 Q show cross-sectional views at each step of the method for manufacturing a semiconductor device according to the present invention. (See Figure 2)
The side surface of the semiconductor substrate 21 having the PN junction is beveled. Further, 22 is an oxide film, and the oxide film 23 on the P layer side is selectively removed. Next, as shown in FIG. 2(B)K, multi-component glasses 24 and 25 are deposited by electrophoresis. Here, the semiconductor substrate 21
The multi-component system attached to the side surface of 24 is the surface protection! i!
As a film, the multi-component system on the P layer side of the semiconductor substrate 2 is the last layer 2.
5 is used as an adhesive. Next, as shown in FIG. 2C), Sl is used as the reinforcing material 26, and this reinforcing material 26 has a donut-shaped hole inside the reinforcing material 23 in order to accommodate the number of electrodes in a later process. The diameter of the reinforcing member 23 is also larger than the diameter of the 81 substrate 21. This auxiliary material 2
3 and 81 substrates 21 are bonded together at the same time since there is a glass film on the P layer side during the firing process of the multi-component glass on the beveled surface.
ここで、焼成温度は６００°〜８００℃で雰囲気は０２
である。この様にして作られた素子はその後電極付は組
み立てられる。Here, the firing temperature is 600° to 800°C and the atmosphere is 0.2°C.
It is. The device made in this way is then assembled with electrodes.
しかして、接着剤としてＡ１を用いた場合第３図に示す
場合が考えられる。第３図■は基板徹
３１と補蜘材３２を先に接着させて、その後多成分系ガ
ラスを形成してその後補強材３１を接着する方法である
。そして、第３図い）の場合は多成分系ガラスの焼成温
度の方がＡＩ ＯＡ１１ｏｙ温度よシも高い為ガラス焼
成時に基板３１と補廊
餅材３２が剥離する。Therefore, when A1 is used as the adhesive, the case shown in FIG. 3 can be considered. FIG. 3 (3) shows a method in which the substrate plate 31 and the reinforcing material 32 are first bonded together, then a multi-component glass is formed, and then the reinforcing material 31 is bonded. In the case of Figure 3), the firing temperature of the multi-component glass is higher than the AI OA11oy temperature, so the substrate 31 and the mochi material 32 separate during glass firing.
また、第３図ＣＢ）の場合ＡＩの飛び散）による耐圧劣
化、基板取扱上の機械的衝撃によるＧｌａｓｍクラック
の発生等の問題が発生する。Further, in the case of FIG. 3 CB), problems such as breakdown voltage deterioration due to AI scattering and generation of Glasm cracks due to mechanical impact during handling of the substrate occur.
以上詳述したようにこの発明によれは、基板保護用のＳ
ｔと基板との接着材に多成分系がラスを用いてベベル面
との保護膜を同一に形成するようにしたので、８１基板
のクラック、耐圧の低下、リーク電流の増大を防止する
ことができる。As described in detail above, according to the present invention, the S
A multi-component lath is used as the adhesive between the T and the substrate to form the same protective film on the beveled surface, preventing cracks in the 81 substrate, a decrease in withstand voltage, and an increase in leakage current. can.
第１図は従来の半導体装置の断面図、第２図（４）ない
しくＱはそれぞれこの発明の一実施例に係る半導体装置
の製造方法の各工程の断面図、第３図（４）及び０）は
それぞれこの発明の他の実施例を示す半導体装置の断面
図である。
１１．２１・・・半導体基板、１２−・・接着材、颯FIG. 1 is a cross-sectional view of a conventional semiconductor device, FIGS. 2 (4) to Q are cross-sectional views of each step of a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIGS. 3 (4) and 0) are cross-sectional views of semiconductor devices showing other embodiments of the present invention. 11.21... Semiconductor substrate, 12-... Adhesive material, Stainless steel
Claims (1)
ラスを用い、ベベル面との保護膜を同一に形成すること
を特徴とする半導体装置の製造方法。 ｆ２１１ミクロン以上の膜厚の酸化膜をベレットと補助
材との間に設定したことを特徴とする特許請求の範囲第
１項記載の半導体装置の製造方法。(1) A method for manufacturing a semiconductor device, characterized in that a multi-component lath is used as an adhesive between St and the substrate for protecting the substrate, and a protective film is formed on the beveled surface in the same manner. 2. The method of manufacturing a semiconductor device according to claim 1, wherein an oxide film having a thickness of f211 microns or more is provided between the pellet and the auxiliary material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56147203A JPS5848921A (en) | 1981-09-18 | 1981-09-18 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56147203A JPS5848921A (en) | 1981-09-18 | 1981-09-18 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5848921A true JPS5848921A (en) | 1983-03-23 |
Family
ID=15424886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56147203A Pending JPS5848921A (en) | 1981-09-18 | 1981-09-18 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848921A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992005590A1 (en) * | 1990-09-14 | 1992-04-02 | Advanced Photonix, Inc. | Light responsive avalanche diode |
-
1981
- 1981-09-18 JP JP56147203A patent/JPS5848921A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992005590A1 (en) * | 1990-09-14 | 1992-04-02 | Advanced Photonix, Inc. | Light responsive avalanche diode |
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