JPS626693Y2 - - Google Patents
Info
- Publication number
- JPS626693Y2 JPS626693Y2 JP9284381U JP9284381U JPS626693Y2 JP S626693 Y2 JPS626693 Y2 JP S626693Y2 JP 9284381 U JP9284381 U JP 9284381U JP 9284381 U JP9284381 U JP 9284381U JP S626693 Y2 JPS626693 Y2 JP S626693Y2
- Authority
- JP
- Japan
- Prior art keywords
- alumina
- cap
- ceramic
- metallized
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 19
- 239000011247 coating layer Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 238000005219 brazing Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005260 alpha ray Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910017309 Mo—Mn Inorganic materials 0.000 description 1
- 229910017311 Mo—Mo Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Die Bonding (AREA)
Description
【考案の詳細な説明】
本考案は、気密封止用セラミツクキヤツプの構
造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a ceramic cap for hermetically sealing.
従来、半導体装置の気密封止法として、Au／
Sn合金等の低融点ろう材を使用する、いわゆる
グレージング法が知られている。このような封止
法は、セラミツクスを基材とする半導体装置用ケ
ースに広く適用されており、使用するキヤツプと
しては、大別すると、AuやSnをメツキしたコバ
ール、42合金等の金属キヤツプ，セラミツクの一
面にＷ、Mo−Mn等のメタライズ金属によるフレ
ーム状のメタライズ層を設け、その上にNiメツ
キさらにAuメツキを施したセラミツクキヤツプ
の２種類がある。 Traditionally, Au/
A so-called glazing method is known that uses a low melting point brazing filler metal such as a Sn alloy. This type of sealing method is widely applied to cases for semiconductor devices based on ceramics, and the caps used can be roughly divided into metal caps such as Kovar plated with Au or Sn, 42 alloy, etc. There are two types of ceramic caps: a frame-shaped metallized layer made of metallized metal such as W or Mo-Mn is provided on one side of the ceramic, and Ni plating and then Au plating are applied on top of the frame-shaped metallized layer.
これらのうち、後者のセラミツクキヤツプで
は、低融点ろう材のセラミツクケースとキヤツプ
との間のセツテイングには、さらに所定の低融点
ろう材板をフレーム状にプレス打抜きし、封止時
にケース、ろう材、キヤツプの順にセツテングす
る方法と、あらかじめキヤツプ側に仮付ないし、
ろう材をデイツピングして付けておく場合があ
る。後者は、組立時の工数を低減できてセラミツ
クキヤツプの形態としては有利である。 Of these, in the latter type of ceramic cap, a predetermined low melting point brazing material plate is press punched into a frame shape for setting between the cap and the ceramic case of the low melting point brazing material. , how to set up the cap in order, and how to set it up without temporarily attaching it to the cap side in advance.
In some cases, brazing filler metal is added by dipping. The latter is advantageous as a form of ceramic cap because it can reduce the number of man-hours during assembly.
いずれの方法をとるにしろ、封止完了後の封止
部の端部をみると、Ｗ，Mo−Mn等のメタライズ
金属がセラミツクからもち上り、細い間隙を作る
場合がある。これは、Au／Sn等の低融点ろう材
の熱膨張係数が、セラミツク、メタライズ金属、
その他の封止部構成材料のいずれよりも大きく、
封止時加熱冷却の熱処理にセラミツク上のメタラ
イズが耐えられないため、引きはがされてしまう
からである。この現象は、ケース封止後の温度サ
イクル、熱シヨツク等の環境試験において促進さ
れるおそれもある。このようになつてしまつたケ
ースは、気密封止そのものは破れていなくとも、
その間隙にHe等を吸着しやすく、気密性チエツ
クの試験において誤判定を生じやすく、好ましく
ない。また、メタライズ層は多孔性であることな
どから、露出したメタライズ金属の耐湿性が問題
になる。 Regardless of which method is used, when looking at the end of the sealed portion after sealing is completed, metallized metal such as W, Mo--Mn, etc. may lift up from the ceramic, creating a narrow gap. This means that the thermal expansion coefficient of low melting point brazing filler metals such as Au/Sn is different from that of ceramics, metallized metals, etc.
Larger than any other sealing material.
This is because the metallization on the ceramic cannot withstand the heat treatment of heating and cooling during sealing, so it will peel off. This phenomenon may be accelerated in environmental tests such as temperature cycling and thermal shock after the case is sealed. In a case that has become like this, even if the hermetic seal itself is not broken,
Helium etc. are likely to be adsorbed in the gap, which tends to cause erroneous judgments in airtightness check tests, which is undesirable. Furthermore, since the metallized layer is porous, moisture resistance of the exposed metallized metal becomes a problem.
すなわち、第１図ａは従来の半導体装置用キヤ
ツプの斜視図、同図ｂは部分断面図である。セラ
ミツク基体１の一主面に、メタライズ層３をフレ
ーム状に設け、その上にNiメツキ層４、さらに
その上にAuメツキ層５が設けられている。この
ような構造であると、メタライズ層の端部はセラ
ミツク基体表面から飛び出ていることになるため
密着強度に欠け、気密封止後において剥離を生じ
る場合がある。この剥離はキヤツプの製造条件で
は解決不能であり、一定の割合で生じ得るもので
ある。このようなキヤツプを用いたケースを気密
試験すると、Heリークテストにおいて剥離した
細い間隙にHeガスを吸着し、誤判定をひきおこ
してしまうことになる。 That is, FIG. 1a is a perspective view of a conventional cap for a semiconductor device, and FIG. 1b is a partial sectional view. A metallized layer 3 is provided in the form of a frame on one main surface of the ceramic substrate 1, a Ni plating layer 4 is provided thereon, and an Au plating layer 5 is further provided thereon. With such a structure, the ends of the metallized layer protrude from the surface of the ceramic substrate, resulting in a lack of adhesion strength, which may cause peeling after hermetic sealing. This peeling cannot be resolved under the manufacturing conditions of the cap and may occur at a certain rate. If a case using such a cap is tested for airtightness, He gas will be adsorbed in the thin gaps that peel off during the He leak test, causing erroneous judgments.
本考案はこのようなメタライズ層の引きはがれ
の欠点を除去した改良された半導体装置用セラミ
ツクキヤツプを提供することを目的とするもので
ある。 The object of the present invention is to provide an improved ceramic cap for semiconductor devices that eliminates the drawback of peeling off of the metallized layer.
本考案のセラミツクキヤツプはセラミツク基板
上に設けたメタライズ層の端部上面にアルミナコ
ーテングを施し、メタライズ層端部の密着性を向
上させている。 The ceramic cap of the present invention has an alumina coating applied to the upper surface of the end of the metallized layer provided on the ceramic substrate to improve the adhesion of the end of the metallized layer.
すなわち、膨張係数の異なる材料が層状に一体
になつている場合、熱ストレス等による層間の剥
離は応力バランスがくずれる層の端部から生じ
る。 That is, when materials having different coefficients of expansion are integrated into layers, separation between the layers due to thermal stress or the like occurs from the ends of the layers where the stress balance is disrupted.
本考案におけるたとえばアルミナであるセラミ
ツク材料基体と、Ｗ／Mo−Mo等のメタライズ材
料とアルミナのコーテング材料との組合せにおい
ては、コーテングして破壊応力を負担せしめる材
料とセラミツク基体とはともにセラミツクスであ
るから焼成により強い強度で一体となるため剥離
防止の効果が顕著になる。 In the present invention, for example, in the combination of a ceramic material base made of alumina, a metallized material such as W/Mo-Mo, and a coating material of alumina, the material to be coated to bear fracture stress and the ceramic base are both ceramics. By firing it, it becomes integrated with a strong strength, so the effect of preventing peeling becomes remarkable.
つぎに本考案を実施例により説明する。 Next, the present invention will be explained with reference to examples.
第２図は本考案の一実施例の部分断面図であ
る。第２図において、アルミナコーテイング層６
をメタライズフレーム３の外側にも設けたもので
ある。アルミナ基体上に、メタライズ層を印刷
後、さらに、アルミナコーテイング層６を印刷し
た後焼成し、焼成後、従来と同様にNiメツキ
４、Auメツキ５を施す。このような構造であれ
ば、アルミナコーテイング層とアルミナ基体とは
焼成により一体となつているため、メタライズ層
端部は剥離することはなく、気密性試験において
誤判定を生ずることはなくなる。 FIG. 2 is a partial sectional view of an embodiment of the present invention. In FIG. 2, the alumina coating layer 6
is also provided outside the metallized frame 3. After printing a metallized layer on the alumina base, an alumina coating layer 6 is further printed and fired, and after firing, Ni plating 4 and Au plating 5 are applied in the same manner as before. With such a structure, since the alumina coating layer and the alumina base are integrated by firing, the ends of the metallized layer will not peel off, and erroneous judgments will not occur in the airtightness test.
第３図は本考案の他の実施例の部分断面図であ
る。第３図において、フレーム状メタライズ層３
を設けた後、外側のアルミナコーテイング層６に
加えて、内側端に重ねて内側全面にもアルミナコ
ーテイング層７を設けている。気密性試験におけ
る不良を防止するためには最底限アルミナコーテ
イング層６を設ければいいが、さらにアルミナコ
ーテイング層７を設ければ、より完全になる。さ
らに、アルミナコーテイング層７を設けることに
すれば、他の効果をも生じる。即ち、第１には、
遮光性の向上があげられる。コーテイングに使用
するアルミナにはFe，Cr等の着色剤を添加した
ものを用いればよい。これは半導体装置の性能が
向上し、外光によつて生じる誤動作を生じる可能
性が高まつているところからかなり効果のあるも
のである。第２は、α線によるいわゆるソフトエ
ラーの防止があげられる。アルミナ基体が含有す
るα線放出物質のため、特定の機能を有する半導
体装置、特にメモリ素子において電荷リークを生
じ、装置の信頼性確保の点で重要な問題となつて
いる。要求されるα線放出限度レベルは0.01カウ
ント／Hr／cm2以下とされているが、現在のアル
ミナセラミツクは、0.1〜0.2カウント／Hr／cm2程
度であり、これを要求レベルにまでするために
は、原材料の精選は勿論、使用する治工具全てに
ついてその使用材料を精選しなければならず、そ
の要する費用は莫大となり、にわかに応じがたい
ものがある。ところが、本考案における構造にお
いて、アルミナコーテイング層７に使用するアル
ミナ等の原材料治工具等だけの精選に限定でき、
費用をかけずに所定の効果を上げることができ
る。 FIG. 3 is a partial sectional view of another embodiment of the present invention. In FIG. 3, a frame-shaped metallized layer 3
After that, in addition to the outer alumina coating layer 6, an alumina coating layer 7 is provided on the entire inner surface, overlapping the inner edge. In order to prevent defects in the airtightness test, it is sufficient to provide the lowest alumina coating layer 6, but if an alumina coating layer 7 is further provided, the result will be more complete. Furthermore, if the alumina coating layer 7 is provided, other effects will also be produced. That is, firstly,
An example of this is an improvement in light shielding properties. The alumina used for coating may be added with a coloring agent such as Fe or Cr. This is quite effective as the performance of semiconductor devices has improved and the possibility of malfunctions caused by external light has increased. The second reason is the prevention of so-called soft errors caused by alpha rays. Because of the α-ray emitting substance contained in the alumina base, charge leakage occurs in semiconductor devices having specific functions, particularly memory devices, which is an important problem in ensuring the reliability of the devices. The required α-ray emission limit level is said to be 0.01 count/Hr/cm 2 or less, but current alumina ceramics have an emission level of about 0.1 to 0.2 counts/Hr/cm 2 , and in order to reach the required level, In order to do so, not only the raw materials must be carefully selected, but also the materials used for all the jigs and tools used must be carefully selected, and the cost required is enormous, and it is difficult to respond suddenly. However, in the structure of the present invention, it is possible to limit the selection of raw materials such as alumina to be used for the alumina coating layer 7.
A predetermined effect can be achieved without incurring any cost.
第１図ａは従来の半導体装置用セラミツクキヤ
ツプの斜視図、同図ｂは図ａの部分断面図、第２
図は本考案の一実施例の部分断面図、第３図は本
考案の他の実施例の部分断面図である。
１……セラミツク基体、３……メタライズ層、
４……Niメツキ層、５……Auメツキ層、６，７
……アルミナコーテイング層。
Fig. 1a is a perspective view of a conventional ceramic cap for semiconductor devices, Fig. 1b is a partial sectional view of Fig.
The figure is a partial sectional view of one embodiment of the present invention, and FIG. 3 is a partial sectional view of another embodiment of the present invention. 1... Ceramic substrate, 3... Metallized layer,
4...Ni plating layer, 5...Au plating layer, 6,7
...Alumina coating layer.
Claims (1)
け、さらに、該メタライズ層の端部上面をアル
ミナにてコーテイングしてあることを特徴とす
る半導体装置用キヤツプ。 (2) 前記コーテイングするアルミナは、前記セラ
ミツク基体よりα線の放出の少ない材料である
ことを特徴とする実用新案登録請求の範囲第(1)
項に記載の半導体装置用キヤツプ。[Claims for Utility Model Registration] (1) A cap for a semiconductor device, characterized in that a metallized layer is provided on one main surface of a ceramic substrate, and further, the top surface of an end of the metallized layer is coated with alumina. (2) Utility model registration claim No. (1) characterized in that the coating alumina is a material that emits less alpha rays than the ceramic substrate.
A cap for a semiconductor device as described in 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9284381U JPS626693Y2 (en) | 1981-06-23 | 1981-06-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9284381U JPS626693Y2 (en) | 1981-06-23 | 1981-06-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57203554U JPS57203554U (en) | 1982-12-24 |
| JPS626693Y2 true JPS626693Y2 (en) | 1987-02-16 |
Family
ID=29887856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9284381U Expired JPS626693Y2 (en) | 1981-06-23 | 1981-06-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS626693Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0744024Y2 (en) * | 1987-03-31 | 1995-10-09 | 三菱マテリアル株式会社 | Sealing plate with window frame brazing material for semiconductor ceramic package |
-
1981
- 1981-06-23 JP JP9284381U patent/JPS626693Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57203554U (en) | 1982-12-24 |
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