JPS5848424A - InΡ半導体結晶のエツチング方法 - Google Patents
InΡ半導体結晶のエツチング方法Info
- Publication number
- JPS5848424A JPS5848424A JP14559881A JP14559881A JPS5848424A JP S5848424 A JPS5848424 A JP S5848424A JP 14559881 A JP14559881 A JP 14559881A JP 14559881 A JP14559881 A JP 14559881A JP S5848424 A JPS5848424 A JP S5848424A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- semiconductor crystal
- inp semiconductor
- mixed
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000000203 mixture Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000243 solution Substances 0.000 abstract description 9
- 239000011259 mixed solution Substances 0.000 abstract description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000003097 mucus Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14559881A JPS5848424A (ja) | 1981-09-17 | 1981-09-17 | InΡ半導体結晶のエツチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14559881A JPS5848424A (ja) | 1981-09-17 | 1981-09-17 | InΡ半導体結晶のエツチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5848424A true JPS5848424A (ja) | 1983-03-22 |
JPS6366414B2 JPS6366414B2 (enrdf_load_stackoverflow) | 1988-12-20 |
Family
ID=15388760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14559881A Granted JPS5848424A (ja) | 1981-09-17 | 1981-09-17 | InΡ半導体結晶のエツチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5848424A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60172669A (ja) * | 1984-01-31 | 1985-09-06 | 株式会社トスカ | 結束バンド |
JPH06191551A (ja) * | 1992-09-18 | 1994-07-12 | Takeuchi Kogyo Kk | ケーブルタイ |
-
1981
- 1981-09-17 JP JP14559881A patent/JPS5848424A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60172669A (ja) * | 1984-01-31 | 1985-09-06 | 株式会社トスカ | 結束バンド |
JPH06191551A (ja) * | 1992-09-18 | 1994-07-12 | Takeuchi Kogyo Kk | ケーブルタイ |
Also Published As
Publication number | Publication date |
---|---|
JPS6366414B2 (enrdf_load_stackoverflow) | 1988-12-20 |
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