JPS5848424A - InΡ半導体結晶のエツチング方法 - Google Patents
InΡ半導体結晶のエツチング方法Info
- Publication number
- JPS5848424A JPS5848424A JP14559881A JP14559881A JPS5848424A JP S5848424 A JPS5848424 A JP S5848424A JP 14559881 A JP14559881 A JP 14559881A JP 14559881 A JP14559881 A JP 14559881A JP S5848424 A JPS5848424 A JP S5848424A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- semiconductor crystal
- inp semiconductor
- mixed
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000000203 mixture Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000243 solution Substances 0.000 abstract description 9
- 239000011259 mixed solution Substances 0.000 abstract description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000003097 mucus Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14559881A JPS5848424A (ja) | 1981-09-17 | 1981-09-17 | InΡ半導体結晶のエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14559881A JPS5848424A (ja) | 1981-09-17 | 1981-09-17 | InΡ半導体結晶のエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5848424A true JPS5848424A (ja) | 1983-03-22 |
| JPS6366414B2 JPS6366414B2 (enrdf_load_stackoverflow) | 1988-12-20 |
Family
ID=15388760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14559881A Granted JPS5848424A (ja) | 1981-09-17 | 1981-09-17 | InΡ半導体結晶のエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848424A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60172669A (ja) * | 1984-01-31 | 1985-09-06 | 株式会社トスカ | 結束バンド |
| JPH06191551A (ja) * | 1992-09-18 | 1994-07-12 | Takeuchi Kogyo Kk | ケーブルタイ |
-
1981
- 1981-09-17 JP JP14559881A patent/JPS5848424A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60172669A (ja) * | 1984-01-31 | 1985-09-06 | 株式会社トスカ | 結束バンド |
| JPH06191551A (ja) * | 1992-09-18 | 1994-07-12 | Takeuchi Kogyo Kk | ケーブルタイ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6366414B2 (enrdf_load_stackoverflow) | 1988-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2026289A1 (en) | Method of manufacturing semiconductor laser | |
| GB2114808A (en) | Semiconductor laser manufacture | |
| JPS5848424A (ja) | InΡ半導体結晶のエツチング方法 | |
| JPS6223191A (ja) | リツジ型半導体レ−ザ装置の製造方法 | |
| JPH0213926B2 (enrdf_load_stackoverflow) | ||
| JPS61176122A (ja) | 半導体装置の製造方法 | |
| JPS5567140A (en) | Method for manufacturing semiconductor device | |
| JPH05217995A (ja) | 半導体装置の製造方法 | |
| JPS5724591A (en) | Manufacture of semiconductor laser device | |
| JPS5543882A (en) | Gaseous-phase growing of compound semiconductor epitaxial film | |
| JPS62207887A (ja) | 砒化インジウムアルミニウムのエツチング液 | |
| JPS62163328A (ja) | ドライエツチング方法 | |
| JP2818665B2 (ja) | 気相エッチング方法 | |
| JPH11238720A (ja) | アンチモン系化合物半導体結晶のエッチング方法及びエッチング溶液 | |
| JPS55138078A (en) | Selective etching liquid for laminated metallic film | |
| JPH05275414A (ja) | 半導体集積回路装置の製造方法 | |
| JPS5323559A (en) | Production of compound semiconductor | |
| JPS60218848A (ja) | 結晶基板のエツチング法 | |
| JP3036031B2 (ja) | 半導体装置の製造方法 | |
| JPS63207119A (ja) | 気相成長方法 | |
| JPS63182850A (ja) | 光半導体装置の製造方法 | |
| JPS6122645A (ja) | 半導体デバイス用基板およびその製造方法 | |
| JPH0547740A (ja) | 半導体装置の製造方法 | |
| JPH04144291A (ja) | 太陽電池セル | |
| JPS5853834A (ja) | 化合物半導体のエッチング方法 |