JPS5843508A - Mass-production type film fabricating device - Google Patents
Mass-production type film fabricating deviceInfo
- Publication number
- JPS5843508A JPS5843508A JP56141839A JP14183981A JPS5843508A JP S5843508 A JPS5843508 A JP S5843508A JP 56141839 A JP56141839 A JP 56141839A JP 14183981 A JP14183981 A JP 14183981A JP S5843508 A JPS5843508 A JP S5843508A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrates
- side wall
- reaction chamber
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、例えばアモルファスシリコン太陽電池の製造
に用いられるような一つの反応室内で多数の基板上に同
時に薄膜をプラズマＣＶＤ法によって生成する貴ａｍ成
膜装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a noble am film forming apparatus that simultaneously forms thin films on a number of substrates in one reaction chamber by plasma CVD, such as those used in the production of amorphous silicon solar cells, for example.
プラズマＣＶＤ法による成膜製置としては、水平に配置
した一方の電極上の基板に平板電極を対向させ、両電１
間に電圧を印加してグロー放電を発生させて反応ガスを
公憤し、基板上に反応ガスの成分の一つの薄膜を生成す
るものが知られている。For film formation using the plasma CVD method, a flat plate electrode is placed opposite the substrate on one of the horizontally arranged electrodes, and both electrodes are placed on one side.
It is known to generate a glow discharge by applying a voltage between the two to discharge the reactive gas, thereby forming a thin film of one of the components of the reactive gas on the substrate.
しかし、この場合には反応室の白蝋に堆積した副生成−
の縞が剥離し、基板に付着して膜の欠陥になる虞がある
。また多数の基板を一つの反応室内で同時に処理する場
合には、反応室の面積が大きくなり、基板の出し大引に
も制約を受けるので量産装置には適さない。However, in this case, by-products deposited on the white wax in the reaction chamber -
There is a risk that the stripes may peel off and adhere to the substrate, resulting in film defects. Furthermore, when a large number of substrates are processed simultaneously in one reaction chamber, the area of the reaction chamber becomes large and there are restrictions on the amount of substrate removal, making this method unsuitable for mass production equipment.
本発、明は反応室の内壁からの落下物が付着しない゛よ
うに基板蒼鉛直に立っていて、かつ多数の基、板め出し
入れが容易であるような量ａｍ成膜装置を！供すること
な目的とする。The present invention aims to provide a mass-scale AM film forming apparatus in which the substrates are vertically oriented to prevent objects falling from the inner walls of the reaction chamber from adhering to them, and in which it is easy to put in and take out a large number of substrates. The purpose is to provide.
この目的は、反応室内に互に平行して鉛直に固定さ４た
多数の第一の電極と、反応室外に移動できる共通の支持
体に固定され第５−の電極とそれぞれ平行に対向する多
数の第二の電極とを備え、第二の電極にはその電極と第
一の電極との間に電圧を印加する際その上に膜が生成さ
れる基板が着脱可能であることによって達成される。This purpose consists of a number of first electrodes fixed vertically in parallel to each other within the reaction chamber, and a number of fifth electrodes fixed to a common support that can be moved outside the reaction chamber and facing each other parallel to each other. This is achieved by having a second electrode with a removable substrate on which a film is generated when a voltage is applied between the second electrode and the first electrode. .
以下図面を引用して本発明の実施例について説゛ 明す
る。図は反応室の一部の上から見た断面図で、反応室の
一方の帽１には互に平行な複数の電極２が互に絶縁して
等間隔の鉛直面内にあるように固定されている。隣接す
る電極２の中央にヒータを内蔵した熱電極３が配置され
る。熱電極３の両面には基板４を取り付けることができ
る。この熱、電極３は側壁１に対向する側壁５に互に絶
縁して固定さ負ている。即ち儒１１５は、本発明におけ
る共通の支持体としての機能を持つ。この側ｌ１ｌＩｓ
は反応室から矢印Ｐ１の方向に取り外１ことができるよ
うになっており、基１［４の取付け、取外しは反応室外
で行うことができ作業容品である。電極２および熱電Ｉ
ｉ３はそれぞ４共通接続導体６．７を介して高周波電源
８Ｋｍｉ続され、こわによって側１１５を反応室に取り
付けた際等間隔になる電極２゜３間にグー−放電が発生
し、ガス導入口９から供給された反応ガス、−えばシ；
、ランが分解して基板４の上にアルモル７アスシＩＪ：
□１、ジンの薄膜が形成される。この鳩舎電極′２と基
ｉ：酬との間にジグザグのガス流路が形成されるので、
この、流路な流れる反応ガスは各基板４に一様に接触し
、均一な膜を生成する。Embodiments of the present invention will be described below with reference to the drawings. The figure is a cross-sectional view of a part of the reaction chamber seen from above, and a plurality of parallel electrodes 2 are fixed to a cap 1 on one side of the reaction chamber so as to be insulated from each other and placed in a vertical plane at equal intervals. has been done. A thermal electrode 3 having a built-in heater is arranged in the center of adjacent electrodes 2. Substrates 4 can be attached to both sides of the thermal electrode 3. This heat is absorbed by the electrodes 3 which are fixed to the side wall 5 opposite to the side wall 1 in a mutually insulated manner. That is, Confucianism 115 functions as a common support in the present invention. This side l1lIs
The base 1 can be removed from the reaction chamber in the direction of arrow P1, and the base 1 [4 can be installed and removed outside the reaction chamber, and is a work item. Electrode 2 and thermoelectric I
i3 is connected to a high frequency power source 8km through 4 common connection conductors 6.7, and due to stiffness, when the side 115 is attached to the reaction chamber, a goo discharge occurs between the electrodes 2.3 which are equally spaced, and the gas is introduced. Reactant gas supplied through port 9 - e.g.
, the run is disassembled and Almol 7 Asci IJ is placed on the substrate 4:
□1. A thin film of gin is formed. A zigzag gas flow path is formed between this pigeonhole electrode '2 and the base i:
This flowing reaction gas uniformly contacts each substrate 4 to form a uniform film.
ているので接続導体７はすべて反応意外にあり、構造が
簡単である。しかし熱電極ｓｔ金属支持体に支持させ、
この支持体を閉鎖可能な反応室の開口部から出し入ｔｌ
″するようにしてもよい。また反応室の撞あるいは支持
体に支持させた熱電極を反応室の側方より出し入わしな
いで、反応室の上方より出し入れするようにしてもよい
。Since all the connecting conductors 7 are non-reactive, the structure is simple. However, the thermal electrode st is supported on a metal support,
This support can be taken in and out from the opening of the reaction chamber which can be closed.
In addition, the thermal electrode supported by the reaction chamber or the support may be inserted and removed from the top of the reaction chamber, instead of being inserted and removed from the side of the reaction chamber.
以上述べたように本発明は膜が形成される基板を取付け
る多数の電極を一つの支持体に支持させ、この支持体を
反応室に出し入れ可能にすることによって基板の取付け
、取外しを容易にすｔ、るものであり１例えばアモルフ
ァスシリコン太陽電池の量産に際して高い生産効率を得
るのに極めて有効である。 ）５As described above, the present invention allows a single support to support a large number of electrodes on which a substrate on which a film is to be formed, and allows this support to be taken in and out of a reaction chamber, thereby making it easy to attach and remove the substrate. For example, it is extremely effective in achieving high production efficiency in the mass production of amorphous silicon solar cells. )5
図は本発明、、；ｌｙｅ実施例の部分断面−である。
１・・・反応室側壁、２・・・電極、３・・・熱電１．
４・・・基板、５・・・反応室側壁（共通の支持体）、
８・・・高周波電源。The figure is a partial cross section of an embodiment of the present invention. 1... Reaction chamber side wall, 2... Electrode, 3... Thermoelectric 1.
4... Substrate, 5... Reaction chamber side wall (common support),
8...High frequency power supply.
Claims (1)
一の電極と、反応室外に移動できる共通の支持体に固定
さね第一の電極とそわぞガ対向する多数の第二の電極と
を備え、第二の電極には該電極と第一の電極との間に電
圧を印−した際その上に膜が生成される基板が着脱可能
であることを艷黴とする量＊蓋成績装置。l) A large number of first electrodes fixed vertically in parallel to each other in the reaction chamber, and a large number of second electrodes fixed to a common support that can be moved outside the reaction chamber and facing the first electrodes. an electrode, and the second electrode has a removable substrate on which a film is generated when a voltage is applied between the electrode and the first electrode. *Lid score device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56141839A JPS5843508A (en) | 1981-09-09 | 1981-09-09 | Mass-production type film fabricating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56141839A JPS5843508A (en) | 1981-09-09 | 1981-09-09 | Mass-production type film fabricating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5843508A true JPS5843508A (en) | 1983-03-14 |
Family
ID=15301342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56141839A Pending JPS5843508A (en) | 1981-09-09 | 1981-09-09 | Mass-production type film fabricating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5843508A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60502259A (en) * | 1983-09-26 | 1985-12-26 | リビ−−オ−ウェンズ−フォ−ド・カンパニ− | Method and apparatus for applying membranes |
| JPS6257213A (en) * | 1985-09-06 | 1987-03-12 | Fuji Electric Corp Res & Dev Ltd | Plasma cvd apparatus |
| EP0539948A2 (en) * | 1991-10-29 | 1993-05-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
| US8292021B2 (en) | 2008-07-07 | 2012-10-23 | Honda Motor Co., Ltd. | Muffler assembly and pseudo muffler assembly for a motorcycle, and motorcycle incorporating the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53112066A (en) * | 1977-03-11 | 1978-09-30 | Fujitsu Ltd | Plasma treatment apparatus |
-
1981
- 1981-09-09 JP JP56141839A patent/JPS5843508A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53112066A (en) * | 1977-03-11 | 1978-09-30 | Fujitsu Ltd | Plasma treatment apparatus |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60502259A (en) * | 1983-09-26 | 1985-12-26 | リビ−−オ−ウェンズ−フォ−ド・カンパニ− | Method and apparatus for applying membranes |
| JPH0582475B2 (en) * | 1983-09-26 | 1993-11-19 | Torainoba Corp | |
| JPS6257213A (en) * | 1985-09-06 | 1987-03-12 | Fuji Electric Corp Res & Dev Ltd | Plasma cvd apparatus |
| JPH0544826B2 (en) * | 1985-09-06 | 1993-07-07 | Fuji Denki Sogo Kenkyusho Kk | |
| EP0539948A2 (en) * | 1991-10-29 | 1993-05-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
| EP0539948A3 (en) * | 1991-10-29 | 1996-01-31 | Canon Kk | Apparatus for forming metal film and process for forming metal film |
| US5653810A (en) * | 1991-10-29 | 1997-08-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
| US8292021B2 (en) | 2008-07-07 | 2012-10-23 | Honda Motor Co., Ltd. | Muffler assembly and pseudo muffler assembly for a motorcycle, and motorcycle incorporating the same |
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