JPS60202937A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS60202937A JPS60202937A JP5820884A JP5820884A JPS60202937A JP S60202937 A JPS60202937 A JP S60202937A JP 5820884 A JP5820884 A JP 5820884A JP 5820884 A JP5820884 A JP 5820884A JP S60202937 A JPS60202937 A JP S60202937A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- reaction gas
- printed circuit
- high frequency
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 14
- 238000007664 blowing Methods 0.000 claims abstract description 5
- 239000012495 reaction gas Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、ドライエツチング装置に関するもので、特Ｖ
こ、銅張積層プリント基板のスルーホール内面のスミア
をプラズマエツチングＶこより除去するのりこ好適なも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a dry etching device, and features
This glue is suitable for removing smear on the inner surface of a through hole in a copper-clad laminated printed circuit board using plasma etching.
従来の半導体製造プロセスで用いられているドライエツ
チング装置は、一般ｔこ、第１図ｔこ示す如く真空容器
１内に高周波電極２および接地電極３を対向して設置し
、試料４を上記高周波電ａ！２の上りこ置き、高周波電
極２に高周波電＃５を接続した構成となっている。しか
して、真空容器１内へ活性ガスまたは不活性ガスを導入
し、所定の真空度を保った状態で高周波電源５より両電
極２，３に高周波電力を印加すると、両電極２．３間に
プラズマが生じ、プラズマ中のイオンにより試料４の表
面をスパッタエツチングするものである。A dry etching apparatus used in a conventional semiconductor manufacturing process generally has a high frequency electrode 2 and a ground electrode 3 placed in a vacuum container 1 facing each other, as shown in FIG. Electric a! The configuration is such that high frequency electrode #5 is connected to high frequency electrode 2. Therefore, when an active gas or an inert gas is introduced into the vacuum container 1 and high frequency power is applied to both electrodes 2 and 3 from the high frequency power source 5 while maintaining a predetermined degree of vacuum, between the two electrodes 2 and 3. Plasma is generated, and the surface of the sample 4 is sputter-etched by ions in the plasma.
一方、第２図に示す如く、絶縁層９を介して銅板８を積
層した銅張積層プリント基板のスルーホール１０ａ内面
のスミア１０は、スルーホール１０ａ内壁Ｖこ固着して
いるため、スパッタエツチングでは除去しりこくく、プ
ラズマにより活性化されたガス分子−こよる反応性エツ
チングが効果的である。このため、第１図において試料
４の代りｒこ銅張積層プリント基板を置くのは好ましく
なく第３図に示す如き高周波電極２と接地型＆３との中
間にプリント基板７を絶縁物すで保持した第３図ｔこ示
す構成が考えられる。On the other hand, as shown in FIG. 2, the smear 10 on the inner surface of the through hole 10a of the copper-clad laminated printed circuit board in which the copper plate 8 is laminated via the insulating layer 9 is fixed to the inner wall V of the through hole 10a, so it cannot be etched by sputter etching. Reactive etching using gas molecules activated by plasma is effective for removal. For this reason, it is not preferable to place a copper-clad laminated printed circuit board instead of the sample 4 in FIG. 1, and the printed circuit board 7 is held between the high-frequency electrode 2 and the ground type &3 with an insulator as shown in FIG. The configuration shown in FIG. 3 can be considered.
しかしながら、第３図の構成１こおいて両電極２゜３の
間にプリント基板７のような導体を配置すると、プラズ
マの発生が接地電極３とプリント基板７との間をこ制限
され、高周波電極２とプリント基板７との間ｅこはプラ
ズマがほとんど発生しないことになる。したがって、こ
の状態でドライエツチングを行なうと、銅張積層プリン
ト基板の周辺部と中央部とでエツチングはの大中な相違
が生じてしまう問題点がある。However, if a conductor such as a printed circuit board 7 is placed between the electrodes 2 and 3 in the configuration 1 shown in FIG. 3, plasma generation is restricted between the ground electrode 3 and the printed circuit board 7, and high frequency Almost no plasma is generated between the electrode 2 and the printed circuit board 7. Therefore, if dry etching is performed in this state, there is a problem in that the etching results will be significantly different between the periphery and the center of the copper-clad laminated printed circuit board.
米国ｒこおいては、第４，５図Ｖこ示す如き銅張積層プ
リント基板用のドライエツチング装置が開発されている
。この６式は、図ｅこ示す如くスリットが形成された高
周波電極２ａ〜２ｅおよび接地型８！３ａ〜３ｅを対に
してプリント基板７の両側１こ設置することにより、プ
リント基板７の周囲をプラズマ化するものであり、ガス
導入孔１２ａ、１２ｂおよび排気孔１３ａ、１３ｂが左
右ｅこ設けられ、反応ガスの流れを左行および右行Ｖこ
交互に変えてエツチングの均一化を図るものであるが、
ガスｍ１％の不均−ｅこよりプリント基板７全面Ｖこお
いてエツチングが不均一となるおそれがある。In the United States, a dry etching apparatus for copper-clad laminated printed circuit boards as shown in FIGS. 4 and 5 has been developed. This type 6 is constructed by installing high frequency electrodes 2a to 2e with slits and grounding types 8!3a to 3e in pairs on both sides of the printed circuit board 7, as shown in Figure e. Gas inlet holes 12a, 12b and exhaust holes 13a, 13b are provided on the left and right sides, and the flow of the reactant gas is alternately changed between the left and right lines to achieve uniform etching. Yes, but
Due to the non-uniformity of the gas m1%, the etching may become non-uniform over the entire surface of the printed circuit board 7.
本発明は、上記問題点にかんがみ、反応ガスの流れを均
一にし安定したプラズマを得て均一なドライエツチング
が可能な装置を提供することを目的としたものである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to provide an apparatus that can uniformly flow a reactant gas, obtain stable plasma, and perform uniform dry etching.
本発明は、電界強度が全面で均一な平行平板電極を用い
、高周波電極又は接地電極の電極下向全面から反応ガス
を吹き出し、一方、接地電極又は高周波？ｌ！極は反応
ガスを均一１こ通過させ、かつ池の電極に対して電界強
度がほぼ均一となるようｔこし、接地電極又は高周波電
極の下１５ｉこプリント基板を設置し、さらにその下方
ｔこ反応ガスの流れを均−ｔこするバッフルを設けたも
ので、そｎｅこより、高周波電極と接地電極間で均一な
プラズマを発生させ、プラズマｔこより活性化されたガ
ス分子をプリント基板のスルーホール内へ均一に導いて
プリント基板全面のスルーホール内のスミアを均−ｒこ
除去するよう？こしたものである。The present invention uses parallel plate electrodes with uniform electric field strength over the entire surface, and blows out a reactive gas from the entire downward surface of the high-frequency electrode or the ground electrode. l! Place the printed circuit board 15cm below the ground electrode or high-frequency electrode so that the reactant gas passes through the electrode uniformly, and the electric field strength is almost uniform with respect to the electrode. This device is equipped with a baffle that evens out the flow of gas, which generates a uniform plasma between the high-frequency electrode and the ground electrode, and the activated gas molecules from the plasma are transferred into the through holes of the printed circuit board. Is it possible to evenly remove smear in the through holes on the entire surface of the printed circuit board? It is strained.
以下、本発明を第６〜１０図？こより詳細ｔこ説明する
。The present invention will be explained in Figures 6 to 10 below. This will be explained in more detail.
ｆＪＳ６，７図は、本発明の一実施例を示すものである
。図ｅこおいて、１は真空容器−であり、下部に排気孔
１３が設けられ排気ポンプ］８１こ接続されている。２
は高周波電極で、絶縁材１４を介して真空容器１の上部
に取付けられ、その下方１こは格子状の接地電極３が高
周波電極２と対向して設けらｒている。Figures fJS6 and 7 show an embodiment of the present invention. In FIG. 2
A high frequency electrode is attached to the upper part of the vacuum vessel 1 via an insulating material 14, and a grid-shaped ground electrode 3 is provided below the high frequency electrode 2, facing the high frequency electrode 2.
例えば、銅張積層のプリント基板７は、接地電極３のす
ぐ下側１こ配置され、絶縁材のサポートＩ５で支持され
た基板受台１６の上に設置されている。しかして、その
下ｊ５ｔこはカス流ｎを均一にするためのバッフル１７
が設けられる。For example, a printed circuit board 7 made of a copper-clad laminate is disposed immediately below the ground electrode 3, and is placed on a board pedestal 16 supported by an insulating support I5. However, below it is a baffle 17 for making the waste flow n uniform.
is provided.
高周波電極２ｖこは高周波電源５が接続され、高周波電
力を供給できるとともｔこ外部から反応ガス。A high-frequency power source 5 is connected to the high-frequency electrode 2v, and high-frequency power can be supplied to the high-frequency electrode 2v, and a reactive gas can be supplied from the outside.
を導く導入孔１２が設けてあり、電極面は第７図ｅこ示
す如く中空構造とされ、電極下向全面から反応カスを均
−Ｖこ吹出す構造である。第７図Ｖこおいて、１９は多
孔板のバッフル、２０は同じく多孔板の吹出し板で、一
旦バツフル１９で反応ガスを電１１３！全面ｔこほぼ均
−ｔこした後、吹出し板２０との間でさらに反応ガス圧
力を均−Ｖこして電極下面から吹出すものである。The electrode surface has a hollow structure as shown in FIG. 7e, and the reaction residue is uniformly blown out from the entire downward surface of the electrode. In FIG. 7, 19 is a baffle made of a perforated plate, and 20 is a blowing plate also made of a perforated plate. After the entire surface is almost evenly strained, the pressure of the reaction gas is further equalized with the blowing plate 20 and then blown out from the lower surface of the electrode.
次１こ、この装置の作用ｔこりいて説明する。真空容器
】は排気ポンプ１８により真空排気され、高周波電極２
から反応ガスが一定流級連続的を乙供給され、真空容器
１の内部は一定真空圧力（約０．１〜ＩＴｏｒｒ）ｒこ
保たれる。この状態で、高周波電極２へ高周波電源５よ
り高周波電力を印加すると、高周波電極２と接地電極３
との間は反応ガスが活性化されて均−Ｖこ安定したプラ
ズマ状態が得られる。Next, the operation of this device will be explained in detail. The vacuum container] is evacuated by the exhaust pump 18, and the high frequency electrode 2
A reaction gas is continuously supplied at a constant flow rate from the reactor 1, and a constant vacuum pressure (approximately 0.1 to I Torr) is maintained inside the vacuum vessel 1. In this state, when high frequency power is applied from the high frequency power supply 5 to the high frequency electrode 2, the high frequency electrode 2 and the ground electrode 3
Between the two, the reactive gas is activated and a stable plasma state is obtained.
活性化された反応ガスは、排気ポンプ】８により格子状
の接地電極３を通過して下かのバッフル１７側へ均一１
こ排気される。プリント基板７は接地電極３の下ｂ１こ
設置されているため、活性化された反応ガスが均−ｒこ
当り、それをこよりプリント基板７のスルーホール内の
スミアはエツチング除去される。The activated reaction gas is uniformly pumped through the grid-shaped ground electrode 3 by the exhaust pump 8 to the lower baffle 17 side.
This is exhausted. Since the printed circuit board 7 is placed below the ground electrode 3, the activated reaction gas is evenly distributed therethrough, and the smear in the through holes of the printed circuit board 7 is etched away.
第８図は、本発明の他の実施例を示し、第６図において
高周波電極２と接地電極３とを置き換えたものである。FIG. 8 shows another embodiment of the present invention, in which the high frequency electrode 2 and the ground electrode 3 in FIG. 6 are replaced.
図Ｖこおいて、２は格子状の高周波電極であり、絶縁材
６ｔこより真空容器１から支えられ、高周波電源５が印
加されている。接地電極３ｖこは外部から反応ガスを導
く導入孔】２が設けてあり、電極面は第７図Ｖこ示亥如
き中空構造とされ、（ル極下面から反応ガスが均−ｔこ
吹出す構造である。また、プリント基板７およびバッフ
ル］７の取付けは、第６図と同様である。In FIG. V, reference numeral 2 denotes a grid-shaped high frequency electrode, which is supported from the vacuum vessel 1 through an insulating material 6t, and a high frequency power source 5 is applied thereto. The ground electrode 3v is provided with an inlet hole 2 for introducing the reactive gas from the outside, and the electrode surface has a hollow structure as shown in Figure 7. Furthermore, the mounting of the printed circuit board 7 and the baffle 7 is the same as that shown in FIG.
かかる装置において、接地電極３より反応ガスを吹出し
高周波′ＩＩｉ極２へ高周波電源５より高周波電力を印
加すると、篩周波電極２と接地゛電極３との間で均−Ｖ
こ安定したプラスマが得られ、活性化さｎ、 ｔ、−ｇ
応ガスは排気ポンプ】８＃こより格子状の高周波電極２
を通過して下すのバッフル】７側へ均一１こ排気され、
途中ｅこ置かれたプリント基板７に均一１こ反応ガスが
当り、プリント基板７のスルーポール内のスミアがエツ
チング除去される。In this device, when a reactive gas is blown out from the ground electrode 3 and high frequency power is applied from the high frequency power source 5 to the high frequency 'IIi electrode 2, an equal voltage of -V is generated between the sieve frequency electrode 2 and the ground electrode 3.
This stable plasma is obtained and activated n, t, -g
Exhaust pump for response gas] 8# lattice-shaped high frequency electrode 2
Pass through the baffle and lower it] Uniformly exhaust air to the 7 side,
A uniform reaction gas is applied to the printed circuit board 7 placed halfway, and the smear in the through poles of the printed circuit board 7 is etched away.
プラズマＶこよるドライエツチング法では、高周波電極
および接地電極は熱が発生し、それｔこより′電極自体
の変形が起これば装置の連続運転ｔこ支障を来たすこと
−こなる。そこで、電極を冷却する必要が生じ、第９，
１０図はその一実施例を示す。In the dry etching method using plasma V, heat is generated in the high frequency electrode and the ground electrode, and if the electrode itself is deformed due to this heat, continuous operation of the apparatus will be hindered. Therefore, it became necessary to cool the electrode, and the ninth
FIG. 10 shows an example thereof.
接地電極３は孔２１が多数設けられた多孔板で、かつ吸
入孔２３．排出孔２４に通ずる冷却水＊２２が内部に設
けられている。接地１１ｉ＃！３が昇温した場合、冷却
水溝２２へ冷却水を通すと接地電極３は冷却されて昇温
は防止され、変形も生ずることなく装置の連続運転が可
能である。The ground electrode 3 is a perforated plate provided with a large number of holes 21, and has suction holes 23. Cooling water *22 communicating with the discharge hole 24 is provided inside. Grounding 11i#! When the temperature of the ground electrode 3 rises, passing cooling water through the cooling water groove 22 cools the ground electrode 3 and prevents the temperature from rising, allowing continuous operation of the device without deformation.
本発明１こよれば、反応カスの流れが均一で安定したプ
ラスマを発生できて均一なドライエツチングが可能とな
り、それ１こより、プリント基板全面のスルーホール門
スミアをエツチング除去できるという効果がある。According to the present invention, the flow of reaction scum is uniform, stable plasma can be generated, and uniform dry etching can be performed, which has the effect of etching away through-hole gate smears on the entire surface of a printed circuit board.
第１図は従来の半導体製造プロセスＶこ用いられている
ドライエツチング装置の基本構成を示す断面図、ＭＳ
２図はスルーホール内のスミアの状態を示す断面図、！
＠３図は従来のドライエツチング装［ｉこプリント基板
を設置した状態の断面図、第４図は従来のプリント基板
用ドライエツチング装置の基本構成を示す正面図、第５
図は第４図のＡ−Ａ断面図、第６図は本発明１こよるプ
リント基板用ドライエツチング装置の一実施例の断面図
、第７図はその高周波電極の詳細断面図、第８図は本発
明の他の実施例の断面図、第９図は本発明１ご用いる接
地電極の一実施例の平面図、第１０図は第９図のＢ−Ｂ
断面図である。
１・・・・・・真空容器、２・・曲高周波電極・３・・
聞接地電極、５・・・・・・高周波電源、７ 、、、、
、、プリント基板、８ ”’ ”’銅板、９・・・・・
絶縁層、１ｏ・・曲スミア、１２・・・・・導入孔、１
３・・・・・・排気孔、１４・・曲絶縁材、１５・・・
・・・サポート、１６・曲・基板受台、１７・・・・・
バッフル、１８・・・・・・排気ポンプ、１９・・・・
・・バッフル、２０・・・・・・吹出し板、２１・・曲
孔、２２・・・・・・冷却水溝、２３・・・・・・吸入
孔、２４・聞・排出孔
牙１日
才４図
ｔｌ
才５ｔ２）
オフ図
才８図
才′＃ｕ
′″ｒｌＯ図Figure 1 is a sectional view showing the basic configuration of a dry etching device used in a conventional semiconductor manufacturing process.
Figure 2 is a cross-sectional view showing the state of smear inside the through hole!
Figure 3 is a cross-sectional view of a conventional dry etching device with a printed circuit board installed, Figure 4 is a front view showing the basic configuration of a conventional dry etching device for printed circuit boards, and Figure 5
The figures are a cross-sectional view taken along the line A-A in FIG. 4, FIG. 6 is a cross-sectional view of an embodiment of the dry etching apparatus for printed circuit boards according to the present invention, FIG. 7 is a detailed cross-sectional view of the high-frequency electrode, and FIG. 9 is a sectional view of another embodiment of the present invention, FIG. 9 is a plan view of an embodiment of the ground electrode used in the first invention, and FIG. 10 is taken along the line BB in FIG.
FIG. 1...Vacuum container, 2...Curved high frequency electrode, 3...
Grounding electrode, 5...High frequency power supply, 7...
,,Printed circuit board, 8 ”'”'Copper plate, 9...
Insulating layer, 1o...Curved smear, 12...Introduction hole, 1
3... Exhaust hole, 14... Curved insulation material, 15...
・・・Support, 16・Song・PCB holder, 17・・・・・・
Baffle, 18...Exhaust pump, 19...
... Baffle, 20 ... Blowout plate, 21 ... Bent hole, 22 ... Cooling water groove, 23 ... Suction hole, 24 ... Discharge hole fang 1 day 4th figure tl 5t2) Off figure 8th figure s'#u ''rlO figure
Claims (1)
極とを対向して設置し、上記ガス吹出し孔を通過したガ
スの流れの下流側に上記電極−こ対面してプリント基板
を設置するようにしたことを特徴とするドライエツチン
グ装置。1. A high frequency electrode and a ground electrode having uniform gas blowing holes are installed facing each other, and a printed circuit board is installed facing the electrodes on the downstream side of the flow of gas that has passed through the gas blowing holes. A dry etching device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5820884A JPS60202937A (en) | 1984-03-28 | 1984-03-28 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5820884A JPS60202937A (en) | 1984-03-28 | 1984-03-28 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60202937A true JPS60202937A (en) | 1985-10-14 |
Family
ID=13077623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5820884A Pending JPS60202937A (en) | 1984-03-28 | 1984-03-28 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60202937A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4986216A (en) * | 1989-05-10 | 1991-01-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor manufacturing apparatus |
| US5129360A (en) * | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
| US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
| US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
| US6167834B1 (en) | 1986-12-19 | 2001-01-02 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| US6194030B1 (en) * | 1999-03-18 | 2001-02-27 | International Business Machines Corporation | Chemical vapor deposition velocity control apparatus |
| US6972071B1 (en) * | 1999-07-13 | 2005-12-06 | Nordson Corporation | High-speed symmetrical plasma treatment system |
-
1984
- 1984-03-28 JP JP5820884A patent/JPS60202937A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6167834B1 (en) | 1986-12-19 | 2001-01-02 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| US4986216A (en) * | 1989-05-10 | 1991-01-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor manufacturing apparatus |
| US5129360A (en) * | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
| US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
| US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
| US6010748A (en) * | 1996-03-22 | 2000-01-04 | Advanced Technology Materials, Inc. | Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector |
| US6194030B1 (en) * | 1999-03-18 | 2001-02-27 | International Business Machines Corporation | Chemical vapor deposition velocity control apparatus |
| US6972071B1 (en) * | 1999-07-13 | 2005-12-06 | Nordson Corporation | High-speed symmetrical plasma treatment system |
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