JP2886878B2 - Vacuum processing equipment - Google Patents
Vacuum processing equipmentInfo
- Publication number
- JP2886878B2 JP2886878B2 JP1046525A JP4652589A JP2886878B2 JP 2886878 B2 JP2886878 B2 JP 2886878B2 JP 1046525 A JP1046525 A JP 1046525A JP 4652589 A JP4652589 A JP 4652589A JP 2886878 B2 JP2886878 B2 JP 2886878B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- sample holder
- plasma
- vacuum
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、真空処理装置に係り、特に半導体素子基板
等の試料を真空下でプラズマ処理するのに好適な真空処
理装置に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus suitable for performing plasma processing of a sample such as a semiconductor element substrate under vacuum.
〔従来の技術〕 試料を真空下で処理する技術としては、例えば、特開
昭58−53833号公報に記載のような、プラズマを利属し
て試料を処理するものが知られている。[Prior Art] As a technique for processing a sample under vacuum, there is known a technique for processing a sample by utilizing plasma as described in Japanese Patent Application Laid-Open No. 58-53833.
上記従来技術では、試料のプラズマ処理時において試
料押えに被着するプラズマ重合膜の点については配慮が
なされていない。このため、プラズマ重合膜の試料押え
への堆積物が増加すると、ついには試料押えから剥離
し、該剥離した堆積物が試料の被処理面に付着し、その
結果として、試料の歩留りが低下するといった問題があ
る。In the above-mentioned prior art, no consideration is given to the point of the plasma polymerized film adhered to the sample holder during the plasma processing of the sample. For this reason, when the deposit of the plasma polymerized film on the sample holder increases, the sample finally peels off from the sample holder, and the separated deposit adheres to the surface to be processed of the sample, and as a result, the sample yield decreases. There is a problem.
なお、このような問題は、プラズマ処理においてのみ
ではなく、分子線や中性粒子等を利用して真空処理する
場合や、ガス反応を利用して真空処理する場合等におい
て、試料押えのように試料を機械的にクランプする手段
を用いる場合においても同様に生じる。In addition, such a problem is caused not only in the plasma processing, but also in the case of performing vacuum processing using molecular beams, neutral particles, or the like, or in performing vacuum processing using gas reaction, as in the case of a sample holder. This also occurs when using means for mechanically clamping the sample.
本発明の目的は、機械的なクランプ手段からの堆積物
の試料被処理面への付着を抑制して試料の歩留り低下を
防止するとともに安定したプラズマ処理を行うことので
きる真空処理装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a vacuum processing apparatus capable of suppressing deposition of deposits from a mechanical clamping means on a surface to be processed, preventing a decrease in sample yield, and performing stable plasma processing. It is in.
上記目的は、内部にプラズマが生成される真空室と、
真空室内に設けた試料台と、真空室内でプラズマ処理さ
れる試料を試料台に機械的にクランプする試料押えとを
具備した真空処理装置において、試料押えの内部に試料
押えを加熱する加熱手段と加熱手段から試料への熱の伝
達を抑制する断熱手段とを設け、試料押えの表面に導電
膜を形成することにより、達成される。The above object is to provide a vacuum chamber in which plasma is generated,
In a vacuum processing apparatus including a sample stage provided in a vacuum chamber and a sample holder mechanically clamping a sample to be plasma-processed in the vacuum chamber to the sample stage, a heating unit for heating the sample holder inside the sample holder. This is achieved by providing a heat insulating means for suppressing the transfer of heat from the heating means to the sample, and forming a conductive film on the surface of the sample holder.
真空室内で試料は、試料押えにより試料台にクランプ
される。試料台の試料は、真空下で処理される。一方、
試料押えは、試料と試料押えとの間での熱の伝わりを抑
制されて加熱手段により加熱される。The sample is clamped on the sample stage by the sample holder in the vacuum chamber. The sample on the sample stage is processed under vacuum. on the other hand,
The sample holder is heated by the heating means while suppressing the transfer of heat between the sample and the sample holder.
真空下での試料のプラズマ処理において、試料処理時
の生成物であるプラズマ重合膜の試料押えへの堆積量
は、固体表面における重合反応とエッチング反応との競
合により決定される。被着固体の表面温度が高いほど、
エッチング反応が重合反応よりも強くなるため、プラズ
マ重合膜の堆積量は減少する。つまり、試料押えを加熱
手段によって加熱することにより、試料押えに被着する
プラズマ重合膜の堆積量を低減できる。これにより試料
押えからの重合膜の剥離、該剥離物の試料被処理面への
付着を抑制することができる。また、試料と試料押えと
の間での熱の移動を抑制することによって、加熱された
試料押えによる試料の温度上昇を防止でき、レジストの
変質等が低減できる。これによって、試料の歩留まり低
下を防止できる。これとともに、該料押え表面に導電膜
が形成されているので、試料押え表面の電位状態が面内
で均一となり、プラズマの生成がより安定に維持される
ので、安定した処理が行える。In plasma processing of a sample under vacuum, the amount of a plasma polymerized film, which is a product of the sample processing, deposited on the sample holder is determined by competition between the polymerization reaction and the etching reaction on the solid surface. The higher the surface temperature of the deposited solid,
Since the etching reaction is stronger than the polymerization reaction, the deposition amount of the plasma polymerized film is reduced. That is, by heating the sample holder by the heating means, the amount of the plasma polymerized film deposited on the sample holder can be reduced. Thereby, peeling of the polymer film from the sample holder and adhesion of the peeled material to the surface to be processed of the sample can be suppressed. Further, by suppressing the transfer of heat between the sample and the sample holder, a rise in the temperature of the sample due to the heated sample holder can be prevented, and the deterioration of the resist can be reduced. As a result, a decrease in the yield of the sample can be prevented. At the same time, since the conductive film is formed on the material holding surface, the potential state of the sample holding surface becomes uniform within the surface, and the generation of plasma is more stably maintained, so that stable processing can be performed.
以下、本発明の一実施例を第１図，第２図により説明
する。第１図はアノード結合方式狭電極タイプの枚葉式
平行平板型ドライエッチング装置を示したものである。
真空室である処理室１は真空排気装置（図示省略）によ
り減圧した後、反応ガスを導入し所望の圧力に設定され
る。処理室１内には対向した電極2,3が配置されてお
り、そのうち一方の電極２は接地され、他方の電極３は
整合器４を介して高周波電源５に接続されている。試料
であるウェハ６は機械的なクランプ手段である試料押え
７により電極２上に固定されており、いわゆるアノード
結合の状態でエッチング処理される。従来は、試料押え
が加熱できる構造となっていなかったために、試料押え
上にプラズマ重合膜が被着し、このプラズマ重合膜の堆
積量が増加すると、膜が剥離し、ウェハ６に付着するこ
とが生じた。第２図は、第１図の試料押え７の構造を示
した図である。例えば、アルマイト処理を行ったアルミ
ニウムから成る試料押え母材８に薄膜抵抗体９、例え
ば、SnO2が設けられ、これに通電することにより加熱す
る。また薄膜抵抗体９の上には保護用絶縁膜10、例え
ば、シリコーンレジンが塗布されている。試料押え７が
ウェハ６と接触する箇所には、この場合、断熱材11、例
えば、カプトンを設け、試料押え７からウェハ６への熱
の流入によるウェハ６の温度上昇を防止している。An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 shows a single-electrode, parallel-plate, dry etching apparatus of the anode coupling type narrow electrode type.
The processing chamber 1, which is a vacuum chamber, is depressurized by a vacuum exhaust device (not shown), and is then set to a desired pressure by introducing a reaction gas. Opposite electrodes 2 and 3 are arranged in the processing chamber 1, one of which is grounded, and the other electrode 3 is connected to a high frequency power supply 5 via a matching unit 4. The wafer 6 as a sample is fixed on the electrode 2 by a sample holder 7 as mechanical clamping means, and is etched in a so-called anodic bonding state. Conventionally, since the sample holder was not structured to be heated, a plasma polymerized film was deposited on the sample holder, and when the deposition amount of the plasma polymerized film increased, the film was peeled off and adhered to the wafer 6. Occurred. FIG. 2 is a view showing the structure of the sample holder 7 of FIG. For example, a thin film resistor 9, for example, SnO 2 is provided on a sample holding base material 8 made of alumite-treated aluminum, and heating is performed by energizing the thin film resistor. On the thin film resistor 9, a protective insulating film 10, for example, a silicone resin is applied. In this case, a heat insulating material 11, for example, Kapton is provided at a position where the sample holder 7 comes into contact with the wafer 6 to prevent the temperature of the wafer 6 from rising due to heat flowing into the wafer 6 from the sample holder 7.
本実施例によれば、試料押え７に発熱体を設け、加熱
できるようにしたので、試料押え７上へのプラズマ重合
膜の堆積量が低減できる。従って、試料押えからの堆積
物の剥離、該剥離物のウェハの被処理面への付着を抑制
できウェハの歩留り低下を防止することができる。ま
た、試料押え７がウェハ６と接触する箇所に断熱材11を
設けたため、ウェハ６の温度上昇を防止でき、その結果
ウェハ６のレジストの変質等が低減できるという効果が
ある。According to the present embodiment, since the heating element is provided on the sample holder 7 so that heating can be performed, the deposition amount of the plasma polymerized film on the sample holder 7 can be reduced. Accordingly, it is possible to suppress the separation of the deposit from the sample holder and the adhesion of the separated substance to the surface to be processed of the wafer, thereby preventing a decrease in the yield of the wafer. Further, since the heat insulating material 11 is provided at a position where the sample holder 7 comes into contact with the wafer 6, the temperature of the wafer 6 can be prevented from rising, and as a result, the quality of the resist on the wafer 6 can be reduced.
第２の実施例を第３図を用いて説明する。アルマイト
処理を行ったアルミニウムから成る上部リング12の裏面
に薄膜抵抗体９が設けられ、その上に保護用絶縁膜10が
設けられている。この発熱体を有する上部リング12を、
断熱材11の２重リングから成る真空断熱層16を介して、
アルマイト処理を行ったアルミニウムから成る下部リン
グ13に取り付け、加熱可能な試料押え7aを構成してい
る。A second embodiment will be described with reference to FIG. A thin film resistor 9 is provided on the back surface of an upper ring 12 made of anodized aluminum, and a protective insulating film 10 is provided thereon. The upper ring 12 having this heating element,
Through a vacuum insulation layer 16 consisting of a double ring of insulation 11,
It is attached to a lower ring 13 made of anodized aluminum and constitutes a sample holder 7a that can be heated.
本実施例によれば、第１の実施例の効果の他に、真空
断熱層を設けたために効果的にウェハ６の温度上昇を防
止できるという効果がある。According to this embodiment, in addition to the effect of the first embodiment, there is an effect that the temperature rise of the wafer 6 can be effectively prevented by providing the vacuum heat insulating layer.
第３の実施例を第４図を用いて説明する。第２の実施
例では上部リング12にはアルマイト処理を行ったアルミ
ニウムを用いたが、本実施例では上部リング14に石英を
用いている。A third embodiment will be described with reference to FIG. In the second embodiment, anodized aluminum is used for the upper ring 12, but quartz is used for the upper ring 14 in the present embodiment.
本実施例によれば第２の実施例の効果の他に、薄膜抵
抗体９が上部リング14上に容易に設けられるという効果
がある。According to this embodiment, in addition to the effect of the second embodiment, there is an effect that the thin film resistor 9 is easily provided on the upper ring 14.
第４の実施例を第５図を用いて説明する。本実施例で
は、第３の実施例において石英から成る上部リング14の
上に導電膜15、例えばアルミニウムを設けたものであ
る。A fourth embodiment will be described with reference to FIG. In this embodiment, a conductive film 15, for example, aluminum is provided on an upper ring 14 made of quartz in the third embodiment.
本実施例によれば、試料押え7cの表面を導電性とした
ために、生成されるプラズマがより安定に維持されると
いう効果がある。According to this embodiment, since the surface of the sample holder 7c is made conductive, there is an effect that the generated plasma is more stably maintained.
第５の実施例を第６図により説明する。第４の実施例
では上部リング14の裏面に薄膜抵抗体９を設けていた
が、本実施例では、上部リング14の表面に薄膜抵抗体９
を設けた。また薄膜抵抗体９の上部には保護用絶縁膜1
0、更に導電膜15が設けられている。A fifth embodiment will be described with reference to FIG. In the fourth embodiment, the thin film resistor 9 is provided on the back surface of the upper ring 14. In this embodiment, the thin film resistor 9 is provided on the surface of the upper ring 14.
Was provided. A protective insulating film 1 is formed on the thin film resistor 9.
0, and a conductive film 15 is further provided.
本実施例によれば、第４の実施例の効果の他に、発熱
体が試料押え7dの表面近くにあるために、試料押え7dの
表面がより効率的に加熱できるという効果がある。According to this embodiment, in addition to the effect of the fourth embodiment, there is an effect that the surface of the sample holder 7d can be heated more efficiently because the heating element is near the surface of the sample holder 7d.
以上発明した各実施例は、平行平板型のプラズマ処理
装置について示したが、他のプラズマ発生方式、例えば
μ波放電，有磁場μ波放電を用いた場合についても同じ
効果が得られる。更に光化学反応，イオンビーム，中性
粒子ビーム等を利用した他の方式の処理装置についても
同じ効果がある。Although each of the embodiments of the present invention has been described with respect to a parallel plate type plasma processing apparatus, the same effect can be obtained in the case of using another plasma generation system, for example, a microwave discharge or a magnetic field microwave discharge. Further, the same effect can be obtained with another type of processing apparatus using a photochemical reaction, an ion beam, a neutral particle beam, or the like.
以上の説明は、ウェハを処理する際に試料押え上に堆
積するプラズマ重合膜の堆積量の低減について述べた
が、プラズマ洗浄中に試料押えを加熱すると、試料押え
上に堆積したプラズマ重合膜を高速で除去できるという
効果がある。The above description has described the reduction in the amount of plasma polymerized film deposited on the sample holder when processing a wafer.However, when the sample holder is heated during plasma cleaning, the plasma polymerized film deposited on the sample holder is reduced. There is an effect that it can be removed at high speed.
本発明によれば、機械的なクランプ手段からの堆積物
の試料被処理面への付着を抑制して試料の歩留り低下を
防止することができるとともに安定したプラズマ処理を
行うことができるという効果がある。ADVANTAGE OF THE INVENTION According to this invention, the effect that the deposition of the deposit from a mechanical clamping means to a sample to-be-processed surface can be suppressed and the yield of a sample can be prevented, and a stable plasma process can be performed. is there.
第１図は、本発明の一実施例のプラズマ処理装置の縦断
面図、第２図は、第１図の試料押えの縦断面図、第３図
ないし第６図は、本発明の第２ないし第５の実施例の試
料押えのそれぞれの縦断面図である。 １……処理室、2,3……電極、４……整合器、５……高
周波電源、６……ウェハ、7,7aないし7d……試料押え、
８……試料押え母材、９……薄膜抵抗体、10……絶縁
膜、11……断熱材、12,14……上部リング、13……下部
リング、15……導電膜、16……真空断熱層FIG. 1 is a longitudinal sectional view of a plasma processing apparatus according to one embodiment of the present invention, FIG. 2 is a longitudinal sectional view of a sample holder of FIG. 1, and FIGS. It is each longitudinal cross-sectional view of the sample holder of the thru | or 5th Example. 1. Processing chamber, 2, 3, Electrode, 4, Matching device, 5, High-frequency power supply, 6, Wafer, 7, 7a to 7d, Sample holder,
8 ... sample holding base material, 9 ... thin film resistor, 10 ... insulating film, 11 ... heat insulating material, 12, 14 ... upper ring, 13 ... lower ring, 15 ... conductive film, 16 ... Vacuum insulation layer
フロントページの続き (72)発明者 川崎 義直 山口県下松市大字東豊井794番地 株式 会社日立製作所笠戸工場内 (56)参考文献 特開 昭59−132623（ＪＰ，Ａ) 特開 昭61−224423（ＪＰ，Ａ) 特開 昭59−139628（ＪＰ，Ａ) 実開 昭63−128724（ＪＰ，Ｕ) 実開 昭63−75034（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/302 H01L 21/3065 H01L 21/461 H01L 21/205 H01L 21/31 H01L 21/365 H01L 21/469 Continuation of front page (72) Inventor Yoshinao Kawasaki 794, Higashi-Toyoi, Katsumatsu-shi, Yamaguchi Prefecture Inside the Kasado Plant of Hitachi, Ltd. (56) References JP-A-59-132623 (JP, A) JP-A-61-224423 (JP, a) JP Akira 59-139628 (JP, a) JitsuHiraku Akira 63-128724 (JP, U) JitsuHiraku Akira 63-75034 (JP, U) (58 ) investigated the field (Int.Cl. 6 , DB name) H01L 21/302 H01L 21/3065 H01L 21/461 H01L 21/205 H01L 21/31 H01L 21/365 H01L 21/469
Claims (1)
記真空室内に設けた試料台と、前記真空室内でプラズマ
処理される試料を前記試料台に機械的にクランプする試
料押えとを具備した真空処理装置において、前記試料押
えの内部に前記試料押えを加熱する加熱手段と前記加熱
手段から前記試料への熱の伝達を抑制する断熱手段とを
設け、前記試料押えの表面に導電膜を形成したことを特
徴とする真空処理装置。1. A vacuum chamber in which plasma is generated, a sample stage provided in the vacuum chamber, and a sample holder for mechanically clamping a sample to be plasma-processed in the vacuum chamber to the sample stage. In the vacuum processing apparatus, a heating means for heating the sample press and a heat insulating means for suppressing the transfer of heat from the heating means to the sample are provided inside the sample press, and a conductive film is formed on the surface of the sample press. A vacuum processing apparatus characterized by being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1046525A JP2886878B2 (en) | 1989-03-01 | 1989-03-01 | Vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1046525A JP2886878B2 (en) | 1989-03-01 | 1989-03-01 | Vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02228035A JPH02228035A (en) | 1990-09-11 |
| JP2886878B2 true JP2886878B2 (en) | 1999-04-26 |
Family
ID=12749696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1046525A Expired - Lifetime JP2886878B2 (en) | 1989-03-01 | 1989-03-01 | Vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2886878B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001012875A1 (en) * | 1999-08-11 | 2001-02-22 | Tokyo Electron Limited | Film forming device |
| JPWO2005069313A1 (en) * | 2004-01-15 | 2007-12-27 | 株式会社エス・エフ・シー | Insulating film and method of forming insulating film |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2532401Y2 (en) * | 1991-04-16 | 1997-04-16 | ソニー株式会社 | Bias ECR plasma CVD equipment |
| JP4317608B2 (en) * | 1999-01-18 | 2009-08-19 | 東京エレクトロン株式会社 | Deposition equipment |
| JP5080043B2 (en) * | 2006-08-31 | 2012-11-21 | 新電元工業株式会社 | Semiconductor device manufacturing method, semiconductor device manufacturing jig, and semiconductor device manufacturing apparatus |
| US20090025636A1 (en) * | 2007-07-27 | 2009-01-29 | Applied Materials, Inc. | High profile minimum contact process kit for hdp-cvd application |
| JP2010098010A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
| JP2010098012A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60223125A (en) * | 1984-04-20 | 1985-11-07 | Hitachi Ltd | Dry-process device |
| DE3752042T2 (en) * | 1986-12-19 | 1997-07-17 | Applied Materials Inc | Plasma etching device with magnetic field amplification |
-
1989
- 1989-03-01 JP JP1046525A patent/JP2886878B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001012875A1 (en) * | 1999-08-11 | 2001-02-22 | Tokyo Electron Limited | Film forming device |
| US6797068B1 (en) | 1999-08-11 | 2004-09-28 | Tokyo Electron Limited | Film forming unit |
| JPWO2005069313A1 (en) * | 2004-01-15 | 2007-12-27 | 株式会社エス・エフ・シー | Insulating film and method of forming insulating film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02228035A (en) | 1990-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0049588B1 (en) | Method and apparatus for dry etching and electrostatic chucking device used therein | |
| JPH0119253B2 (en) | ||
| WO1999054928A1 (en) | Electrostatic chuck formed by integral ceramic and metal sintering | |
| JP2886878B2 (en) | Vacuum processing equipment | |
| US3479269A (en) | Method for sputter etching using a high frequency negative pulse train | |
| JP3205878B2 (en) | Dry etching equipment | |
| EP0112989B1 (en) | Copper texturing process | |
| JP3520577B2 (en) | Plasma processing equipment | |
| JPH01200625A (en) | Semiconductor wafer processing equipment | |
| JP2000328248A (en) | Method for cleaning thin film forming apparatus and thin film forming apparatus | |
| JPH11251093A (en) | Plasma generating electrode | |
| JP2000164582A (en) | Plasma processing system | |
| JPH07106307A (en) | Plasma treatment equipment and plasma treatment method | |
| JP3078506B2 (en) | Electrostatic chuck device and mounting table | |
| JPH06291064A (en) | Plasma treatment device | |
| JPS63116428A (en) | Dry etching method | |
| JP2669249B2 (en) | Plasma processing apparatus and method for cleaning the apparatus | |
| JPH0476495B2 (en) | ||
| JP2001107246A (en) | Deposition of carbon film or film composed essentially of carbon | |
| JPS6355939A (en) | Dry etching device | |
| JPS63107024A (en) | Etching device | |
| JP2001085405A (en) | Method and device for processing plasma | |
| JPH11340212A (en) | Surface wave plasma etching apparatus | |
| JPH07221071A (en) | Dry etching device | |
| JP3047106B2 (en) | Cathode electrode for ashing process |