JPS5834981A - 圧電薄膜形電気−機械的変位変換素子の製造方法 - Google Patents

圧電薄膜形電気−機械的変位変換素子の製造方法

Info

Publication number
JPS5834981A
JPS5834981A JP56134413A JP13441381A JPS5834981A JP S5834981 A JPS5834981 A JP S5834981A JP 56134413 A JP56134413 A JP 56134413A JP 13441381 A JP13441381 A JP 13441381A JP S5834981 A JPS5834981 A JP S5834981A
Authority
JP
Japan
Prior art keywords
thin film
piezoelectric thin
layer
electrode layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56134413A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213833B2 (cs
Inventor
Yoshihiro Hamakawa
濱川　圭弘
Katsuhiro Kinoshita
木下　勝裕
Mitsutaka Kato
加藤　充孝
Seisuke Hinota
日野田　征佑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEISAN GIJUTSU SHINKO KYOKAI
Omron Corp
Original Assignee
SEISAN GIJUTSU SHINKO KYOKAI
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEISAN GIJUTSU SHINKO KYOKAI, Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical SEISAN GIJUTSU SHINKO KYOKAI
Priority to JP56134413A priority Critical patent/JPS5834981A/ja
Publication of JPS5834981A publication Critical patent/JPS5834981A/ja
Publication of JPH0213833B2 publication Critical patent/JPH0213833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Pressure Sensors (AREA)
JP56134413A 1981-08-26 1981-08-26 圧電薄膜形電気−機械的変位変換素子の製造方法 Granted JPS5834981A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56134413A JPS5834981A (ja) 1981-08-26 1981-08-26 圧電薄膜形電気−機械的変位変換素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56134413A JPS5834981A (ja) 1981-08-26 1981-08-26 圧電薄膜形電気−機械的変位変換素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5834981A true JPS5834981A (ja) 1983-03-01
JPH0213833B2 JPH0213833B2 (cs) 1990-04-05

Family

ID=15127797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56134413A Granted JPS5834981A (ja) 1981-08-26 1981-08-26 圧電薄膜形電気−機械的変位変換素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5834981A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60137462U (ja) * 1984-02-23 1985-09-11 ティーディーケイ株式会社 アクチユエ−タ素子
US6408496B1 (en) * 1997-07-09 2002-06-25 Ronald S. Maynard Method of manufacturing a vibrational transducer
US20110056059A1 (en) * 2009-09-07 2011-03-10 Ngk Insulators, Ltd. Method of producing piezoelectric/electrostrictive film type device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60137462U (ja) * 1984-02-23 1985-09-11 ティーディーケイ株式会社 アクチユエ−タ素子
US6408496B1 (en) * 1997-07-09 2002-06-25 Ronald S. Maynard Method of manufacturing a vibrational transducer
US20110056059A1 (en) * 2009-09-07 2011-03-10 Ngk Insulators, Ltd. Method of producing piezoelectric/electrostrictive film type device
US8881353B2 (en) * 2009-09-07 2014-11-11 Ngk Insulators, Ltd. Method of producing piezoelectric/electrostrictive film type device

Also Published As

Publication number Publication date
JPH0213833B2 (cs) 1990-04-05

Similar Documents

Publication Publication Date Title
JP4276708B2 (ja) レートセンサを製造するための方法
JP4448845B2 (ja) 回転レートセンサの製造方法
WO1989008847A1 (en) Differential capacitive transducer and method
TWI269349B (en) Bump style MEMS switch
CN116684798A (zh) 一种压电麦克风的结构和制造方法
JPH10116996A (ja) 複合デバイス製造方法、及び複合デバイス
JPS5834981A (ja) 圧電薄膜形電気−機械的変位変換素子の製造方法
TW521439B (en) Method for making a thin film structure
US20040121619A1 (en) Multipoint minute electrode, device for measuring a living organism voltage, method for fabricating the multipoint minute electrode, and method for fabricating the living organism voltage-measuring device
WO2004068591A1 (ja) 半導体装置の製造方法及び加速度センサ
JP3484956B2 (ja) 圧電体素子の製造方法
JPH0485829A (ja) 半導体装置及びその製造方法
JPS613431A (ja) 多層配線を有する半導体装置およびその製造方法
JPH10308397A (ja) 電極端子及びその製造方法
JP2504239B2 (ja) 半導体装置の製造方法
JPS63275113A (ja) 半導体装置の製造方法
JPH04303943A (ja) 半導体装置の製造方法
JPH0132746Y2 (cs)
JPH11340189A (ja) マイクロマシン製造における凹部又は貫通孔の形成方法
JPS6257114B2 (cs)
JPS605232B2 (ja) ジヨセフソン素子の製造方法
JPS61144034A (ja) 転写バンプ基板の製造方法
JPH0760886B2 (ja) 半導体装置の製造方法
JPS6346152B2 (cs)
JPH0611078B2 (ja) 半導体装置の製造方法