JPS5833706B2 - Semiconductor manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor, and particularly to a method of manufacturing a container for storing a semiconductor chip.

FIGS. 1A-1G are cross-sectional views of essential parts of an example of a conventional method for manufacturing a semiconductor storage container.

In the same figure a, for example, it is made of green ceramic,
A seal layer sheet 1, a lead layer 2, and a base layer 3 are prepared, each having square holes 1a and 2a in the center thereof in which a semiconductor chip (not shown) can be accommodated.

As shown in the figure, through holes 4a and 4, which are common to the three layers, are formed in the seal layer 1, lead layer 2, and base layer 3 along the outer peripheral surfaces of the holes 1a and 2a, respectively.
b, forming 4c.

Next, as shown in Figure C, a metallized layer 5a for hermetic sealing is formed on the upper surface of the sealing layer 1, a metallized layer 5b for taking out the electrodes of the semiconductor chip to the outside is formed on the lead layer 2, and A metallized layer 5c for fixing a semiconductor chip is formed on the base layer 3.

Next, as shown in FIG. d, the seal layer 1, the lead layer 2,
The base layer 3 is laminated with its through holes 4a, 4b, and 4c aligned to form a laminated substrate 6.

This laminated substrate 6 is then fired at a predetermined temperature to form a fired substrate 7 in which the three layers 1.degree. 2.3 are integrated, as shown in FIG.

Thereafter, this fired substrate 7 is cut along the through holes 4 to form a leadless container 8 as shown in FIG.

For example, a gold plating layer 9 is formed on the metallized layers 5a, 5b, and 5c exposed on the surface of the container 8, thereby forming a semiconductor storage container as shown in FIG.

However, in the method for manufacturing a semiconductor storage container using the above process, the through hole punching process and the final gold plating process require a lot of manpower and work time, and the entire process is extremely complex, which significantly reduces the production yield. As a result, the manufacturing cost becomes high.

In particular, it is more expensive than the commonly used DIL type ceramic container.

Therefore, an object of the present invention has been made in view of the above-mentioned drawbacks, and is to provide a semiconductor manufacturing method that improves production yield and reduces manufacturing costs by omitting the through-hole process and rationalizing the plating process. It is about providing.

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor manufacturing method according to the present invention will be described in detail below with reference to the drawings.

FIGS. 2a to 2g are cross-sectional views illustrating the main steps of an embodiment of the semiconductor manufacturing method, particularly the semiconductor storage container manufacturing method, according to the present invention.

In FIG. 1A, a sealing layer 1, a lead layer 2 and a base layer 3 having rectangular holes 1a and 2a in the center for accommodating a semiconductor chip are prepared in the same manner as in the step of FIG. 1A.

As shown in the figure, tungsten metallized layers 5a, sb, and 5c for hermetic sealing, chip electrode extraction, and chip fixing are provided at predetermined positions on the seal layer 1, lead layer 2, and base layer 3, respectively. The three layers 1, 2.3 are printed and superimposed to form a multilayer substrate 10 (see C in the same figure).

Then, this laminated substrate 10 is fired at a predetermined temperature to form a fired substrate 11 in which the three layers 1, 2, and 3 are integrated, as shown in FIG. d.

Thereafter, a gold plating layer 9 is formed on the metallized layers 5a, 5b, and 5c exposed on the surface of the fired substrate 11 (see e in the figure).

Here, in the formation of the containers explained in the above process, a large number of containers are formed on an integrated large substrate, so
Then, the container is cut and separated into individual containers, and the metallized layer 5b for taking out the chip electrode is exposed on the side surface of the container.

Then, as shown in FIG. 9G, a protruding electrode 12 made of a metal member is formed on this exposed portion by metal plating or molten metal dipping, thereby forming a leadless container 13.

Further, FIGS. 3 a-e are cross-sectional process diagrams illustrating in detail the steps after the cutting and separating process shown in FIG. 2 f.

In these figures, as shown in FIG. 3a, the fired substrate 11 that has undergone the gold plating process in FIG. 13, and an insulating layer 1 is further applied on the upper surface thereof by a coating method.
4, a groove 15 deeper than the insulating layer 14 is formed at a predetermined position to be cut and separated, as shown in FIG.
The lead metallized layer 5b, which will be the lead extraction portion, is exposed on the side surface, and this exposed portion is electroplated to form a convex electrode 12 as shown in FIG.

Thereafter, the conductive layer 14 and insulating layer 15 formed on the upper surface of the fired substrate 11 are removed by an appropriate removal method.
The groove portion 15 is mechanically cut and separated, and
As shown in the main part plan view of the figure, each leadless container 13
The manufacturing of the container is completed by dividing the container into two parts.

According to this manufacturing method, the through-hole punching process after forming the raw sheet is omitted, and the gold plating process is performed on the integrated dog-shaped burnout board before it is cut and separated into individual containers. This simplifies the manufacturing process, greatly reduces the manpower and work time required, and enables mass production.

Further, in the lead plating process, it is easy to determine whether or not the internal conduction between the convex electrode 12 and the lead metallized layer 5b is good, and mounting on a printed circuit board or the like is extremely easy.

As explained above, according to the semiconductor manufacturing method of the present invention, the through-hole punching process is omitted and the plating process is streamlined, thereby greatly simplifying the container manufacturing process. Since the time is shortened, extremely excellent effects such as greatly improving productivity and significantly reducing manufacturing costs can be obtained.

[Brief explanation of the drawing]

Fig. 1a''-g is a cross-sectional process diagram of a main part showing an example of a conventional method for manufacturing a semiconductor, especially a semiconductor chip storage container, and Fig. 2a-%-g is a process diagram for manufacturing a semiconductor, especially a semiconductor chip storage container, according to the present invention. FIGS. 3a-3e are cross-sectional process diagrams of essential parts showing an example of the method; FIG. 1 is a plan view of essential parts showing an example of a semiconductor storage container. 1... Sealing layer, 1a... Hole portion, 2...
...Lead layer, 2a... Hole, 3...
...Base layer, 4, 4a. 4b, 4c-sulhole, 5a, 5b, 5c・
...Metallized layer, 6... Laminated substrate, 7
... Baking substrate, 8 ... Container, 9 ...
... Gold plating layer, 10 ... Laminated substrate, 11.
...Fired substrate, 12...Convex electrode, 13
... Conductive layer, 14 ... Insulating layer, 15.
·····groove.

Claims (1)

[Scope of Claims] 1. A semiconductor manufacturing method comprising a container in which a semiconductor chip is housed and a metallized layer is laminated for taking out the electrodes of the semiconductor chip to the outside, wherein the container has a hole portion through which the semiconductor chip can pass. a process of forming a plurality of green sheet plates having a shape, a step of printing a metallized layer at a predetermined position on the upper surface of each of the green sheet plates, and a process of laminating the plurality of green sheet plates and then firing them at a predetermined temperature. a step of forming a substrate, a step of applying metal plating to the metallized layer exposed on the fired substrate, a step of cutting and dividing the metal-plated fired substrate into predetermined dimensions, and exposing the metallized layer on the cut surface. forming a convex electrode on the metallized layer. 2. The method of manufacturing a semiconductor according to claim 1, wherein the convex electrode is formed by electroplating. 3. Manufacturing the semiconductor according to claim 1, wherein the cutting is performed by providing a conductive layer and an insulating layer on the metal plating layer, forming grooves from the surface of the insulating layer, and dividing the semiconductor by a mechanical method. Method.