JPS5832417A - プラズマエツチング装置及びプラズマエツチング方法 - Google Patents

プラズマエツチング装置及びプラズマエツチング方法

Info

Publication number
JPS5832417A
JPS5832417A JP56130187A JP13018781A JPS5832417A JP S5832417 A JPS5832417 A JP S5832417A JP 56130187 A JP56130187 A JP 56130187A JP 13018781 A JP13018781 A JP 13018781A JP S5832417 A JPS5832417 A JP S5832417A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
parallel
cathode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56130187A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0311542B2 (enrdf_load_stackoverflow
Inventor
Takashi Hirao
孝 平尾
Koshiro Mori
森　幸四郎
Masatoshi Kitagawa
雅俊 北川
Shinichiro Ishihara
伸一郎 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56130187A priority Critical patent/JPS5832417A/ja
Publication of JPS5832417A publication Critical patent/JPS5832417A/ja
Publication of JPH0311542B2 publication Critical patent/JPH0311542B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP56130187A 1981-08-21 1981-08-21 プラズマエツチング装置及びプラズマエツチング方法 Granted JPS5832417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56130187A JPS5832417A (ja) 1981-08-21 1981-08-21 プラズマエツチング装置及びプラズマエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56130187A JPS5832417A (ja) 1981-08-21 1981-08-21 プラズマエツチング装置及びプラズマエツチング方法

Publications (2)

Publication Number Publication Date
JPS5832417A true JPS5832417A (ja) 1983-02-25
JPH0311542B2 JPH0311542B2 (enrdf_load_stackoverflow) 1991-02-18

Family

ID=15028151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56130187A Granted JPS5832417A (ja) 1981-08-21 1981-08-21 プラズマエツチング装置及びプラズマエツチング方法

Country Status (1)

Country Link
JP (1) JPS5832417A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225637A (ja) * 1982-06-23 1983-12-27 Sony Corp イオンビ−ム装置
JPS6214429A (ja) * 1985-07-12 1987-01-23 Hitachi Ltd 表面処理方法及び表面処理装置
WO1999035667A1 (en) * 1998-01-09 1999-07-15 E.I. Du Pont De Nemours And Company Plasma treatment for producing electron emitters
WO2003003403A1 (en) * 2001-06-29 2003-01-09 Lam Research Corporation Configurable plasma volume etch chamber
US7459098B2 (en) 2002-08-28 2008-12-02 Kyocera Corporation Dry etching apparatus, dry etching method, and plate and tray used therein
US7556741B2 (en) 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
JP2010087009A (ja) * 2008-09-29 2010-04-15 Kyocera Corp エッチング装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225637A (ja) * 1982-06-23 1983-12-27 Sony Corp イオンビ−ム装置
JPS6214429A (ja) * 1985-07-12 1987-01-23 Hitachi Ltd 表面処理方法及び表面処理装置
WO1999035667A1 (en) * 1998-01-09 1999-07-15 E.I. Du Pont De Nemours And Company Plasma treatment for producing electron emitters
WO2003003403A1 (en) * 2001-06-29 2003-01-09 Lam Research Corporation Configurable plasma volume etch chamber
US6527911B1 (en) 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
CN1309000C (zh) * 2001-06-29 2007-04-04 兰姆研究有限公司 可控制等离子体容积的蚀刻室
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7459098B2 (en) 2002-08-28 2008-12-02 Kyocera Corporation Dry etching apparatus, dry etching method, and plate and tray used therein
US7556741B2 (en) 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
JP2010087009A (ja) * 2008-09-29 2010-04-15 Kyocera Corp エッチング装置

Also Published As

Publication number Publication date
JPH0311542B2 (enrdf_load_stackoverflow) 1991-02-18

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