JPS5832241A - 静電容量値の変化検出型再生針の製作法 - Google Patents
静電容量値の変化検出型再生針の製作法Info
- Publication number
- JPS5832241A JPS5832241A JP12935281A JP12935281A JPS5832241A JP S5832241 A JPS5832241 A JP S5832241A JP 12935281 A JP12935281 A JP 12935281A JP 12935281 A JP12935281 A JP 12935281A JP S5832241 A JPS5832241 A JP S5832241A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- needle
- electrode
- regenerated
- recycled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 72
- 239000010432 diamond Substances 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 40
- 238000005468 ion implantation Methods 0.000 claims abstract description 27
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- 230000008929 regeneration Effects 0.000 claims description 9
- 238000011069 regeneration method Methods 0.000 claims description 9
- 238000005087 graphitization Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 238000002513 implantation Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 21
- 238000001514 detection method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- -1 argon ions Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- FOPZHFTZETZNBN-UHFFFAOYSA-N [I].[Ar] Chemical compound [I].[Ar] FOPZHFTZETZNBN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/06—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electrical capacitance; Record carriers therefor
- G11B9/07—Heads for reproducing capacitive information
- G11B9/075—Heads for reproducing capacitive information using mechanical contact with record carrier, e.g. by stylus
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12935281A JPS5832241A (ja) | 1981-08-20 | 1981-08-20 | 静電容量値の変化検出型再生針の製作法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12935281A JPS5832241A (ja) | 1981-08-20 | 1981-08-20 | 静電容量値の変化検出型再生針の製作法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5832241A true JPS5832241A (ja) | 1983-02-25 |
| JPS6160488B2 JPS6160488B2 (enrdf_load_stackoverflow) | 1986-12-20 |
Family
ID=15007474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12935281A Granted JPS5832241A (ja) | 1981-08-20 | 1981-08-20 | 静電容量値の変化検出型再生針の製作法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5832241A (enrdf_load_stackoverflow) |
-
1981
- 1981-08-20 JP JP12935281A patent/JPS5832241A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6160488B2 (enrdf_load_stackoverflow) | 1986-12-20 |
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