JPS5826665B2 - wire bonding method - Google Patents

wire bonding method

Info

Publication number
JPS5826665B2
JPS5826665B2 JP52124475A JP12447577A JPS5826665B2 JP S5826665 B2 JPS5826665 B2 JP S5826665B2 JP 52124475 A JP52124475 A JP 52124475A JP 12447577 A JP12447577 A JP 12447577A JP S5826665 B2 JPS5826665 B2 JP S5826665B2
Authority
JP
Japan
Prior art keywords
wire
bonding
tool
bonding method
clamper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52124475A
Other languages
Japanese (ja)
Other versions
JPS5458353A (en
Inventor
信人 山崎
猛 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP52124475A priority Critical patent/JPS5826665B2/en
Publication of JPS5458353A publication Critical patent/JPS5458353A/en
Publication of JPS5826665B2 publication Critical patent/JPS5826665B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78317Shape of other portions
    • H01L2224/78318Shape of other portions inside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は半導体のペレットと外部リードとの間を超音波
ワイヤボンディング装置のツールに挿通されたA7線等
のワイヤで接続するワイヤボンディング方法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding method for connecting a semiconductor pellet and an external lead with a wire such as an A7 wire inserted through a tool of an ultrasonic wire bonding apparatus.

従来の超音波ワイヤボンディング装置は、細線用A7線
を対象として開発されたもので、太線用AA線を使用し
てボンディングをすることは不可能である。
Conventional ultrasonic wire bonding equipment was developed for thin A7 wire, and it is impossible to bond using thick AA wire.

そこで、太線用AA線をボンディングする場合はペレッ
トにボンディングし、外部リード上でAl線をカッター
にて切断する動作を繰返してペレットのみをボンディン
グし、後で外部リードのみをスポット溶接するなどの特
殊な方法がとられていた。
Therefore, when bonding a thick AA wire, it is necessary to bond it to a pellet, repeat the operation of cutting the Al wire with a cutter on the external lead, bond only the pellet, and then spot weld only the external lead later. A method was used.

このように太線用Al線をボンディングする作業は時間
的なロスが大きく非能率的であった。
The work of bonding thick Al wires in this way involves a large amount of time loss and is inefficient.

本発明は上記従来の欠点に鑑みなされたもので、太線用
Al線をボンディングする場合でも細線用Al線のボン
ディングと同様に自動化が可能なワイヤボンディング方
法を提供することを目的とする。
The present invention was made in view of the above-mentioned conventional drawbacks, and an object of the present invention is to provide a wire bonding method that can be automated in the same way as bonding of thin Al wires even when bonding thick Al wires.

以下本発明を図示の実施例に基づいて説明する。The present invention will be explained below based on illustrated embodiments.

図は本発明になるワイヤボンディング方法の一実施例を
示す動作説明図である。
The figure is an operational explanatory diagram showing an embodiment of the wire bonding method according to the present invention.

1はペレット、2は外部リード、3はAA線、4は図示
しないボンディングヘッドに取付けられた超音波発振ホ
ーン、5は超音波発振ホーン4に保持されたツール、6
はAl線3を繰出し及び切断するクランパーである。
1 is a pellet, 2 is an external lead, 3 is an AA wire, 4 is an ultrasonic oscillation horn attached to a bonding head (not shown), 5 is a tool held by the ultrasonic oscillation horn 4, 6
is a clamper that feeds out and cuts the Al wire 3.

次にその動作について説明する。Next, its operation will be explained.

まず第1図の如く図示しないスプールから繰出されたA
l線3はツール5の先端下まで延出しており、クランパ
ー6がAl線3を保持しペレット1の上に停止している
First, as shown in Figure 1, A is fed out from a spool (not shown).
The Al wire 3 extends to below the tip of the tool 5, and a clamper 6 holds the Al wire 3 and stops on the pellet 1.

この状態より第2図の如く図示しないボンディングヘッ
ドの駆動により超音波発振ホーン4に保持されたツール
5が下降し、ペレット1にAl線3をはさみ込む形で接
地し超音波発振によってボンディングする。
From this state, as shown in FIG. 2, the tool 5 held by the ultrasonic oscillation horn 4 is lowered by driving a bonding head (not shown), and the aluminum wire 3 is sandwiched between the pellet 1 and grounded, and bonded by ultrasonic oscillation.

ボンディング完了後、Al線3を保持していたクランパ
ー6が開く。
After the bonding is completed, the clamper 6 holding the Al wire 3 opens.

そして第3図の如く図示しないボンディングヘッドの駆
動により超音波発振ホーン4に保持されたツール5が上
昇し、その後図示しないXY駆動機構により外部リード
2上に移動する。
Then, as shown in FIG. 3, the tool 5 held by the ultrasonic oscillation horn 4 is raised by driving a bonding head (not shown), and then moved onto the external lead 2 by an XY drive mechanism (not shown).

ツール5が移動している間にクランパー6は繰出し下限
位置6aから切断位置6bへ移動する。
While the tool 5 is moving, the clamper 6 moves from the lower limit feeding position 6a to the cutting position 6b.

次に第4図の如く図示しないボンディングヘッドの駆動
により超音波発振ホーン4に保持されたツール5が下降
し、外部リード2にAl線3をはさみ込む形で接地し超
音波発振によってボンディングする。
Next, as shown in FIG. 4, the tool 5 held by the ultrasonic oscillation horn 4 is lowered by driving a bonding head (not shown), and the aluminum wire 3 is grounded between the external leads 2 and bonded by ultrasonic oscillation.

ボンディング完了後、第5図の如く図示しないXY駆動
機構によりAl線3挿通方向に超音波発振ホーン4に保
持されたツール5をボンディング部分からずらし、再び
ボンディング時の超音波発振よりも強い超音波発振によ
ってAl線3をつぶし切れ易すくする。
After the bonding is completed, as shown in FIG. 5, the tool 5 held by the ultrasonic oscillation horn 4 is moved from the bonding area in the direction of insertion of the Al wire 3 by an XY drive mechanism (not shown), and the ultrasonic wave stronger than the ultrasonic oscillation during bonding is again generated. The oscillation makes the Al wire 3 easier to crush and break.

超音波発振完了後、クランパー6が閉じてAl線3を保
持する。
After the ultrasonic oscillation is completed, the clamper 6 closes and holds the Al wire 3.

クランパー6がAl線3を保持した後、第6図の如くク
ランパー6は切断位置6bから上限6cにツールからl
線がはずれない程度移動してAl線3を切断する。
After the clamper 6 holds the Al wire 3, the clamper 6 moves from the tool to the upper limit 6c from the cutting position 6b as shown in FIG.
The Al wire 3 is cut by moving to an extent that the wire does not come off.

その後第7図の如く図示しないボンディングヘッドの駆
動により超音波発振ホーン4に保持されたツール5が上
昇する。
Thereafter, as shown in FIG. 7, the tool 5 held by the ultrasonic oscillation horn 4 is raised by driving a bonding head (not shown).

ツール5が上昇完了後、第8図の如くAl線3を保持し
たクランパー6は上限6cから繰出し下限位置6aに移
動しツール5の先端下にAl線3を繰出す。
After the tool 5 has completed its ascent, the clamper 6 holding the Al wire 3 moves from the upper limit 6c to the lower limit position 6a and feeds out the Al wire 3 below the tip of the tool 5, as shown in FIG.

その後図示しないXY駆動機構により超音波発振ホーン
4に保持されたツール5は、ペレットの次のバット上に
移動し、第1図の状態となる。
Thereafter, the tool 5 held by the ultrasonic oscillation horn 4 by an XY drive mechanism (not shown) is moved onto the next vat of pellets, resulting in the state shown in FIG. 1.

この様に第1図から第8図までの動作を繰返えすことに
よって、1ケの半導体部品のボンディングが完了する。
By repeating the operations from FIG. 1 to FIG. 8 in this manner, bonding of one semiconductor component is completed.

以上の説明から明らかな様に、本発明になるワイヤボン
ディング方法によれば、Al線の径に関係なく自動的に
超音波によるワイヤボンディングをする事ができる。
As is clear from the above description, according to the wire bonding method of the present invention, wire bonding can be automatically performed using ultrasonic waves regardless of the diameter of the Al wire.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明になるワイヤボンディング方法の一実施例を
示し、第1図乃至第8図は動作説明図である。 1・・・・・・ペレット、2・・・・・・外部リード、
3・・・・・・Al線、4・・・・・・超音波発振ホー
ン、5・・・・・・ツール、6・・・・・・クランパー
The figure shows an embodiment of the wire bonding method according to the present invention, and FIGS. 1 to 8 are explanatory diagrams of the operation. 1...Pellet, 2...External lead,
3... Al wire, 4... Ultrasonic oscillation horn, 5... Tool, 6... Clamper.

Claims (1)

【特許請求の範囲】[Claims] 1 ペレットと外部リードとの間を超音波ワイヤボンデ
ィング装置のツールに挿通されたワイヤで接続するワイ
ヤボンディング方法において、第2ボンディング位置で
ある外部リードにボンディングした後、ツールをワイヤ
挿通方向に少しずらし、更にボンディングより強い発振
をかけることによってワイヤをつぶして切れ易くし、そ
の後クランパーで引張ってワイヤを切断するワイヤボン
ディング方法。
1 In a wire bonding method in which a pellet and an external lead are connected by a wire inserted through a tool of an ultrasonic wire bonding device, after bonding to the external lead which is the second bonding position, the tool is slightly shifted in the wire insertion direction. , a wire bonding method that crushes the wire to make it easier to break by applying a stronger oscillation than bonding, and then pulls it with a clamper to cut the wire.
JP52124475A 1977-10-19 1977-10-19 wire bonding method Expired JPS5826665B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52124475A JPS5826665B2 (en) 1977-10-19 1977-10-19 wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52124475A JPS5826665B2 (en) 1977-10-19 1977-10-19 wire bonding method

Publications (2)

Publication Number Publication Date
JPS5458353A JPS5458353A (en) 1979-05-11
JPS5826665B2 true JPS5826665B2 (en) 1983-06-04

Family

ID=14886429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52124475A Expired JPS5826665B2 (en) 1977-10-19 1977-10-19 wire bonding method

Country Status (1)

Country Link
JP (1) JPS5826665B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867189U (en) * 1981-10-29 1983-05-07 株式会社エポゾ−ル pipe cover

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032958B2 (en) * 1972-03-27 1975-10-25
JPS5267262A (en) * 1975-12-01 1977-06-03 Seiko Epson Corp Wire bonding method and its device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032958U (en) * 1973-07-20 1975-04-10

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032958B2 (en) * 1972-03-27 1975-10-25
JPS5267262A (en) * 1975-12-01 1977-06-03 Seiko Epson Corp Wire bonding method and its device

Also Published As

Publication number Publication date
JPS5458353A (en) 1979-05-11

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