JPH1012652A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH1012652A
JPH1012652A JP8184165A JP18416596A JPH1012652A JP H1012652 A JPH1012652 A JP H1012652A JP 8184165 A JP8184165 A JP 8184165A JP 18416596 A JP18416596 A JP 18416596A JP H1012652 A JPH1012652 A JP H1012652A
Authority
JP
Japan
Prior art keywords
tool
ball
bonding
wire
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8184165A
Other languages
Japanese (ja)
Inventor
Toru Mochida
亨 持田
Shinichi Nishiura
信一 西浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP8184165A priority Critical patent/JPH1012652A/en
Priority to TW086106035A priority patent/TW388089B/en
Priority to KR1019970023732A priority patent/KR980005943A/en
Publication of JPH1012652A publication Critical patent/JPH1012652A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]

Abstract

PROBLEM TO BE SOLVED: To prevent the excessive crushing of balls or wires or cracking of the balls or wires by bonding the wires by bringing the balls or wires into contact with a surface to be bonded by impressing ultrasonic vibrations upon a tool before the balls or wires are brought into contact with the surface to be bonded. SOLUTION: When a tool 7 abruptly descends and reaches a search level 1, a horn holding the tool 7 impresses ultrasonic vibrations 10 upon the tool 7 by making ultrasonic oscillations. The tool 7 removes the coating film 13 of a first surface 3 to be bonded by applying the vibrations 10 to the surface 3 while descending and a ball 12 formed at the front end of a wire 11 are brought into contact with the surface 3. After the ball 12 adheres to the surface 3, the ball 12 is bonded to the surface 3 by pressurizing the ball 12 and applying the vibrations 10 of the tool 7 to the ball 12. Therefore, the excessive crushing of balls or wires or cracking of the ball or wires can be prevented and, at the same time, the bondability can be improved. In addition, the productivity can be improved by shortening the time required for bringing the balls or wires into contact with the surface to be bonded.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はワイヤボンディング
方法に係り、特に超音波併用熱圧着ワイヤボンディング
方法又は超音波ワイヤボンディング方法に関する。The present invention relates to a wire bonding method, and more particularly, to a thermocompression bonding wire bonding method using ultrasonic waves or an ultrasonic wire bonding method.

【０００２】[0002]

【従来の技術】従来、超音波併用熱圧着ワイヤボンディ
ング方法は、例えば特開平２−２９９２４９号公報に示
すように、ツールに超音波振動を与えてボンディングす
る第１の方法と、ツールに超音波振動を与えると共にス
クラブ動作を行わせてボンディングする第２の方法とが
知られている。2. Description of the Related Art Conventionally, a thermocompression bonding wire bonding method using ultrasonic waves is disclosed in, for example, Japanese Patent Laid-Open No. 2-299249. A second method of bonding by applying vibration and performing a scrub operation is known.

【０００３】第１の方法によるボンド面へのボンディン
グは、図３に示すタイミングで行われる。ツールはＺ軸
駆動によってサーチレベル１まで急速に下降し、サーチ
レベル１よりＺ軸駆動によって低速で下降してワイヤの
先端に形成されたボールを第１ボンド面３（パッド表
面）に接地し、その第１ボンド面３より更に若干ツール
を下降（沈み込み）させてボールが加圧される。またボ
ール加圧後にツールを一端に保持したホーンが超音波発
振を行ってツールに超音波振動が印加される。これによ
り、第１ボンド面３にボールがボンディングされる。The bonding to the bond surface by the first method is performed at the timing shown in FIG. The tool rapidly descends to the search level 1 by the Z-axis drive, descends at a low speed by the Z-axis drive from the search level 1, and grounds the ball formed at the tip of the wire to the first bond surface 3 (pad surface), The ball is pressed by slightly lowering (sinking) the tool from the first bonding surface 3. After the ball is pressed, the horn holding the tool at one end performs ultrasonic oscillation to apply ultrasonic vibration to the tool. As a result, the ball is bonded to the first bond surface 3.

【０００４】次にツールは上昇、ＸＹ方向への駆動及び
下降させられてワイヤの繰り出しが行われる。その後は
第１ボンド面３へのボンディングタイミング動作と同様
に、ツールはサーチレベル２まで急速に下降し、サーチ
レベル２より低速に下降して第２ボンド面４（リード表
面）に接地、沈み込み、ワイヤの加圧及び超音波振動が
行われ、第２ボンド面４にワイヤがボンディングされ
る。その後、クランパが開いた状態でツールが上昇し、
続いてクランパが閉じてワイヤ挿通方向に上昇し、ワイ
ヤは第２ボンド面４の根元部より切断される。次にツー
ルは上昇、クランパが開、上昇、閉、下降の動作を行っ
てワイヤの先端がツールの下面に延在される。なお、ｔ
11は第１ボンド面３へのボンディング時間、ｔ12は第２
ボンド面４へのボンディング時間を示す。[0004] Next, the tool is raised, driven in the X and Y directions, and lowered to feed the wire. Thereafter, the tool rapidly descends to the search level 2 and descends at a slower speed than the search level 2 as in the bonding timing operation to the first bond surface 3, and contacts the second bond surface 4 (lead surface) and sinks. Then, pressure and ultrasonic vibration of the wire are performed, and the wire is bonded to the second bonding surface 4. Then, the tool rises with the clamper open,
Subsequently, the clamper closes and rises in the wire insertion direction, and the wire is cut from the root of the second bond surface 4. Next, the tool is raised, the clamper is opened, raised, closed, and lowered, and the tip of the wire is extended to the lower surface of the tool. Note that t
11 is the bonding time to the first bond surface 3 and t 12 is the second
The time for bonding to the bonding surface 4 is shown.

【０００５】第２の方法によるボンド面へのボンディン
グは、図４に示すタイミングで行われる。ツールが第１
ボンド面３及び第２ボンド面４にボール及びワイヤを加
圧して超音波発振を行っている時、即ちボンディング時
にツールをＸＹ方向に駆動するスクラブ信号５、６を与
える。The bonding to the bond surface by the second method is performed at the timing shown in FIG. Tool is first
Scrub signals 5 and 6 for driving the tool in the X and Y directions during the ultrasonic oscillation when the ball and the wire are pressed against the bonding surface 3 and the second bonding surface 4, that is, at the time of bonding, are applied.

【０００６】[0006]

【発明が解決しようとする課題】ところで、第１ボンド
面３（パッド表面）にパッシベーションが残っている場
合、またボンド面３、４に酸化皮膜ができてボンド状態
が悪い場合には、前記した第１の方法のように単に超音
波振動を与えるのみではボンド面３、４の皮膜が充分に
除去されなく、ボンダビリティが悪いので、長時間の超
音波発振を行う必要がある。Incidentally, when passivation remains on the first bond surface 3 (pad surface), or when an oxide film is formed on the bond surfaces 3 and 4 and the bond state is poor, the above-mentioned condition is satisfied. Simply applying ultrasonic vibrations as in the first method does not sufficiently remove the coating on the bond surfaces 3 and 4 and has poor bondability. Therefore, it is necessary to perform ultrasonic vibration for a long time.

【０００７】この点、第２の方法は、ボール又はワイヤ
をボンド面３、４に加圧及び超音波振動を与える他に、
ツールにスクラブ動作を行わせてボール又はワイヤをボ
ンド面３、４にボンディングするので、パッシベーショ
ン又は酸化皮膜等の皮膜がスクラブ動作によって除去さ
れ、ボンダビリティが向上する。In this regard, the second method is to apply a ball or wire to the bonding surfaces 3 and 4 by applying pressure and ultrasonic vibration,
Since the ball or wire is bonded to the bonding surfaces 3 and 4 by causing the tool to perform a scrubbing operation, a film such as a passivation or an oxide film is removed by the scrubbing operation, thereby improving bondability.

【０００８】しかし、皮膜を除去するために、ボール又
はワイヤがボンド面３、４に接地後、ボンド面３、４に
ボール又はワイヤを押し付けた状態で通常より大きい又
は長時間超音波発振を印加したり、またスクラブ動作さ
せると、圧着ボール又はワイヤが潰れ過ぎて横に広がり
過ぎてしまう。特にファインピッチデバイスでは、パッ
ド表面から圧着ボールがはみ出してしまう場合もある。
またパッド表面のアルミ面が薄いデバイスでは、超音波
発振又はスクラブ動作によりアルミ面の下にクラックが
発生することがある。また前記したそれぞれの方法は、
ボール又はワイヤがボンド面３、４に接地後に皮膜除去
を行うので、皮膜のないボンド面３、４へのボンディン
グに比べてボンド面３、４に接地している時間を長く必
要とし、生産性が悪い。However, in order to remove the film, after the ball or wire is grounded to the bonding surfaces 3 and 4, the ultrasonic oscillation is applied to the bonding surfaces 3 and 4 with the ball or wire pressed against the bonding surface 3 or 4 for a longer or longer time than usual. Or scrubbing action, the crimped ball or wire is too crushed and spreads too wide. In particular, in a fine pitch device, the press-bonded ball may protrude from the pad surface in some cases.
In a device having a thin aluminum surface on a pad surface, cracks may be generated below the aluminum surface due to ultrasonic oscillation or scrubbing operation. Also, each of the above methods
Since the film is removed after the ball or wire is grounded to the bond surfaces 3 and 4, the time required for grounding to the bond surfaces 3 and 4 is longer than when bonding to the bond surfaces 3 and 4 without a film, and productivity is increased. Is bad.

【０００９】本発明の第１の課題は、ボール又はワイヤ
の潰れ過ぎやクラックの発生が防止できると共に、ボン
ダビリティが向上するワイヤボンディング方法を提供す
ることにある。A first object of the present invention is to provide a wire bonding method which can prevent the ball or wire from being excessively crushed or cracked and can improve the bondability.

【００１０】本発明の第２の課題は、ボール又はワイヤ
の接地時間の短縮が図れ、生産性が向上するワイヤボン
ディング方法を提供することにある。A second object of the present invention is to provide a wire bonding method which can shorten the ball or wire grounding time and improve the productivity.

【００１１】[0011]

【課題を解決するための手段】上記課題を解決するため
の本発明の手段は、ボール又はワイヤをツールでボンド
面に押し付け、ツールに超音波振動を印加してボンディ
ングするワイヤボンディング方法において、ボール又は
ワイヤがボンド面に接地する前からツールに超音波振動
を印加してボール又はワイヤをボンド面に接地させてボ
ンディングすることを特徴とする。According to the present invention, there is provided a wire bonding method for pressing a ball or wire against a bonding surface with a tool and applying ultrasonic vibration to the tool to perform bonding. Alternatively, before the wire is grounded on the bonding surface, ultrasonic vibration is applied to the tool so that the ball or wire is grounded on the bonding surface and bonding is performed.

【００１２】[0012]

【発明の実施の形態】本発明の一実施の形態を図１及び
図２により説明する。図１（ａ）に示すツールのＺ軸移
動、図１（ｂ）に示すＺ軸駆動、図１（ｃ）に示すＸＹ
軸駆動、図１（ｄ）に示すワイヤ加圧は、従来例と同じ
である。本実施の形態においては、ツール７が急速に下
降してサーチレベル１に達すると、図１（ｅ）及び図２
（ａ）に示すように、ツール７を保持した図示しないホ
ーンが超音波発振８を行ってツール７に超音波振動１０
が印加される。従って、サーチレベル１より低速で下降
し、ワイヤ１１の先端に形成されたボール１２は、第１
ボンド面３に接地する場合、図２（ｂ）に示すように、
ツール７は下降動作をしながら超音波振動１０によって
第１ボンド面３（パッド表面）上の皮膜１３を除去して
図２（ｃ）に示すように第１ボンド面３に接地する。接
地後は、図２（ｄ）に示すように、ボール１２が加圧さ
れ、またツール７の超音波振動１０によって第１ボンド
面３にボール１２がボンディングされる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS. 1A, Z-axis movement of the tool, Z-axis drive shown in FIG. 1B, XY shown in FIG.
The shaft driving and the wire pressing shown in FIG. 1D are the same as in the conventional example. In the present embodiment, when the tool 7 rapidly descends and reaches the search level 1, FIGS.
As shown in (a), a horn (not shown) holding the tool 7 performs an ultrasonic oscillation 8 to apply an ultrasonic vibration 10 to the tool 7.
Is applied. Therefore, the ball 12 descending at a lower speed than the search level 1 and formed at the tip of the wire 11
When grounding to the bonding surface 3, as shown in FIG.
The tool 7 removes the film 13 on the first bond surface 3 (pad surface) by ultrasonic vibration 10 while descending, and is grounded to the first bond surface 3 as shown in FIG. After the grounding, as shown in FIG. 2D, the ball 12 is pressed, and the ball 12 is bonded to the first bonding surface 3 by the ultrasonic vibration 10 of the tool 7.

【００１３】このように、ツール７は下降動作しながら
超音波振動１０によって第１ボンド面３の皮膜１３を除
去して第１ボンド面３に接地するので、従来例のように
接地した第１ボンド面３にツール７を押し付けた（加圧
した）状態で皮膜１３を除去するための超音波発振又は
スクラブ動作は行う必要がなく、ボール１２の潰れ過ぎ
や第１ボンド面３のクラック発生が防止できる。また第
１ボンド面３に接地後の皮膜１３の除去動作が必要ない
ため、ボール１２が第１ボンド面３に接地する時間ｔ21
は、図３及び図４に示す時間ｔ11より短縮され、生産性
が向上する。また皮膜１３のない第１ボンド面３のワー
クの場合でも、下降動作しながら第１ボンド面３と接合
していくため、従来例のように接地後に行っていた接合
のための超音波発振が短時間の印加ですみ、生産性が向
上する。As described above, since the tool 13 is moved downward to remove the film 13 on the first bond surface 3 by the ultrasonic vibration 10 and ground the first bond surface 3, the grounded first ground 3 is used as in the conventional example. There is no need to perform ultrasonic oscillation or scrubbing operation to remove the film 13 while the tool 7 is pressed (pressed) against the bond surface 3, and the ball 12 is excessively crushed and the first bond surface 3 is cracked. Can be prevented. Further, since it is not necessary to remove the film 13 after the first bond surface 3 is grounded, the time t 21 when the ball 12 is grounded to the first bond surface 3 is required.
Is shorter than the time t 11 shown in FIGS. 3 and 4, the productivity is improved. In addition, even in the case of the work of the first bond surface 3 without the film 13, since the work is joined to the first bond surface 3 while moving down, the ultrasonic oscillation for the bonding performed after grounding as in the conventional example is not performed. A short application time improves productivity.

【００１４】なお、第２ボンド面４へのボンディング動
作時にも、ツール７がサーチレベル２に達すると、ツー
ル７に超音波発振９が印加される。これにより、第２ボ
ンド面４においても第１ボンド面３の場合と同様に、ツ
ール７が下降しながら皮膜を除去する。When the tool 7 reaches the search level 2 also during the bonding operation to the second bond surface 4, the ultrasonic oscillation 9 is applied to the tool 7. As a result, the coating is removed from the second bonding surface 4 while the tool 7 descends, as in the case of the first bonding surface 3.

【００１５】[0015]

【発明の効果】本発明によれば、ボール又はワイヤがボ
ンド面に接地する前からツールに超音波振動を印加して
ボール又はワイヤをボンド面に接地させてボンディング
するので、ボール又はワイヤの潰れ過ぎやクラックの発
生が防止できると共に、ボンダビリティが向上する。ま
たボール又はワイヤの接地時間の短縮が図れ、生産性が
向上する。According to the present invention, before the ball or wire is grounded on the bonding surface, ultrasonic vibration is applied to the tool to bond the ball or wire to the bonding surface so that the ball or wire is crushed. Passage and cracks can be prevented, and bondability is improved. In addition, the grounding time of the ball or wire can be reduced, and the productivity can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明のワイヤボンディング方法の一実施の形
態を示すタイミング図である。FIG. 1 is a timing chart showing an embodiment of a wire bonding method according to the present invention.

【図２】皮膜除去及びボンディング状態の工程を示す説
明図である。FIG. 2 is an explanatory view showing steps of a film removal and a bonding state.

【図３】従来例の第１の方法を示すタイミング図であ
る。FIG. 3 is a timing chart showing a first method of a conventional example.

【図４】従来例の第２の方法を示すタイミング図であ
る。FIG. 4 is a timing chart showing a second method of the conventional example.

【符号の説明】[Explanation of symbols]

１、２ サーチレベル ３ 第１ボンド面 ４ 第２ボンド面 ７ ツール ８、９ 超音波発振 １０ 超音波振動 １１ ワイヤ １２ ボール １３ 皮膜 1, 2 Search level 3 1st bond surface 4 2nd bond surface 7 Tool 8, 9 Ultrasonic oscillation 10 Ultrasonic vibration 11 Wire 12 Ball 13 Coating

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 ボール又はワイヤをツールでボンド面に
押し付け、ツールに超音波振動を印加してボンディング
するワイヤボンディング方法において、ボール又はワイ
ヤがボンド面に接地する前からツールに超音波振動を印
加してボール又はワイヤをボンド面に接地させてボンデ
ィングすることを特徴とするワイヤボンディング方法。1. A wire bonding method in which a ball or a wire is pressed against a bonding surface with a tool and ultrasonic vibration is applied to the tool to bond the ultrasonic wave to the tool before the ball or wire is grounded to the bonding surface. And bonding the ball or wire to the bonding surface by grounding.
JP8184165A 1996-06-25 1996-06-25 Wire bonding method Withdrawn JPH1012652A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8184165A JPH1012652A (en) 1996-06-25 1996-06-25 Wire bonding method
TW086106035A TW388089B (en) 1996-06-25 1997-05-05 Wire bonding method
KR1019970023732A KR980005943A (en) 1996-06-25 1997-06-10 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8184165A JPH1012652A (en) 1996-06-25 1996-06-25 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH1012652A true JPH1012652A (en) 1998-01-16

Family

ID=16148510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8184165A Withdrawn JPH1012652A (en) 1996-06-25 1996-06-25 Wire bonding method

Country Status (3)

Country Link
JP (1) JPH1012652A (en)
KR (1) KR980005943A (en)
TW (1) TW388089B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011037869A2 (en) * 2009-09-22 2011-03-31 Kulicke And Soffa Industries, Inc. Methods of forming wire bonds for wire loops and conductive bumps
JP2017168735A (en) * 2016-03-17 2017-09-21 豊田合成株式会社 Wire bonding method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011037869A2 (en) * 2009-09-22 2011-03-31 Kulicke And Soffa Industries, Inc. Methods of forming wire bonds for wire loops and conductive bumps
WO2011037869A3 (en) * 2009-09-22 2011-07-07 Kulicke And Soffa Industries, Inc. Methods of forming wire bonds for wire loops and conductive bumps
JP2017168735A (en) * 2016-03-17 2017-09-21 豊田合成株式会社 Wire bonding method

Also Published As

Publication number Publication date
TW388089B (en) 2000-04-21
KR980005943A (en) 1998-03-30

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