JPS5825721A - Ｍｏｓトランジスタの駆動方法 - Google Patents

Ｍｏｓトランジスタの駆動方法

Info

Publication number
JPS5825721A
JPS5825721A JP56124167A JP12416781A JPS5825721A JP S5825721 A JPS5825721 A JP S5825721A JP 56124167 A JP56124167 A JP 56124167A JP 12416781 A JP12416781 A JP 12416781A JP S5825721 A JPS5825721 A JP S5825721A
Authority
JP
Japan
Prior art keywords
transistor
winding
time
transformer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56124167A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0226818B2 (enExample
Inventor
Yoshihiko Fukuhara
福原　佳彦
Taisuke Oguchi
泰介 小口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56124167A priority Critical patent/JPS5825721A/ja
Publication of JPS5825721A publication Critical patent/JPS5825721A/ja
Publication of JPH0226818B2 publication Critical patent/JPH0226818B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Electronic Switches (AREA)
JP56124167A 1981-08-10 1981-08-10 Ｍｏｓトランジスタの駆動方法 Granted JPS5825721A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56124167A JPS5825721A (ja) 1981-08-10 1981-08-10 Ｍｏｓトランジスタの駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56124167A JPS5825721A (ja) 1981-08-10 1981-08-10 Ｍｏｓトランジスタの駆動方法

Publications (2)

Publication Number Publication Date
JPS5825721A true JPS5825721A (ja) 1983-02-16
JPH0226818B2 JPH0226818B2 (enExample) 1990-06-13

Family

ID=14878600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56124167A Granted JPS5825721A (ja) 1981-08-10 1981-08-10 Ｍｏｓトランジスタの駆動方法

Country Status (1)

Country Link
JP (1) JPS5825721A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62109537U (enExample) * 1985-12-25 1987-07-13
US4694206A (en) * 1983-12-14 1987-09-15 Agence Spatiale Europeenne Drive circuit for a power field effect transistor
JPS63114318A (ja) * 1986-10-30 1988-05-19 Kyosan Electric Mfg Co Ltd パワ−半導体スイツチ素子の駆動回路
US4758941A (en) * 1987-10-30 1988-07-19 International Business Machines Corporation MOSFET fullbridge switching regulator having transformer coupled MOSFET drive circuit
JPS63279613A (ja) * 1987-05-11 1988-11-16 Fuji Electric Co Ltd 負荷駆動用半導体回路装置
JPH02503862A (ja) * 1988-02-24 1990-11-08 ヒユーズ・エアクラフト・カンパニー ２状態両方向単極双投ハーフブリッジパワースイッチング装置およびこのような電子パワースイッチング装置用のパワー供給手段
KR100496487B1 (ko) * 1996-12-18 2005-09-30 가부시키 가이샤 히다치 카 엔지니어링 Mos트랜지스터의구동장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127055A (enExample) * 1974-08-15 1976-03-06 Nippon Electric Co
JPS5151276A (enExample) * 1974-10-31 1976-05-06 Nippon Electric Co
JPS522371A (en) * 1975-06-24 1977-01-10 Nec Corp Switching transistor driving circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5127055A (enExample) * 1974-08-15 1976-03-06 Nippon Electric Co
JPS5151276A (enExample) * 1974-10-31 1976-05-06 Nippon Electric Co
JPS522371A (en) * 1975-06-24 1977-01-10 Nec Corp Switching transistor driving circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4694206A (en) * 1983-12-14 1987-09-15 Agence Spatiale Europeenne Drive circuit for a power field effect transistor
JPS62109537U (enExample) * 1985-12-25 1987-07-13
JPS63114318A (ja) * 1986-10-30 1988-05-19 Kyosan Electric Mfg Co Ltd パワ−半導体スイツチ素子の駆動回路
JPS63279613A (ja) * 1987-05-11 1988-11-16 Fuji Electric Co Ltd 負荷駆動用半導体回路装置
US4758941A (en) * 1987-10-30 1988-07-19 International Business Machines Corporation MOSFET fullbridge switching regulator having transformer coupled MOSFET drive circuit
JPH02503862A (ja) * 1988-02-24 1990-11-08 ヒユーズ・エアクラフト・カンパニー ２状態両方向単極双投ハーフブリッジパワースイッチング装置およびこのような電子パワースイッチング装置用のパワー供給手段
KR100496487B1 (ko) * 1996-12-18 2005-09-30 가부시키 가이샤 히다치 카 엔지니어링 Mos트랜지스터의구동장치

Also Published As

Publication number Publication date
JPH0226818B2 (enExample) 1990-06-13

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