JPS5825254A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To easily improve the characteristic of a device having an elastic surface wave element which requires an electrode of specially minute width, by arranging chips made of different materials on a plane through the intermediary of an insulating connection part, and by providing metal wirings on the continuous surfaces of the chips. CONSTITUTION:Chips A and B are arranged horizontally on a vacuum chuck 13 made of fluorocarbon resin and having a smooth surface, with their surfaces, whereon electrodes are formed, on the lower side and with a gap 14 between them. The chips are sucked up by the chuck under vacuum, epoxy resin is filled up in the gap 14 and subjected to a setting process, and thereby an insulating connection part 9 is formed. The chips A and B thus incorporated in one body are removed from the chuck 13 and arranged on a package substrate 3 being an insulator whereon a metal plate or an electroconductive layer is formed, with the back surfaces of the chips A and B coated with an insulating bonding agent 10 and an electroconductive bonding agent 11, respectively. Then a desired setting process is applied thereto. The combination of the bonding agents is selected properly in accordance with the materials and structures of the chips A and B. Next, a metal is connected thereto and a wiring 12, an electrode 6, etc. are attached thereto. Since the wiring is not present in a space between the chips, the increase in the capacity of leads and in a feedthrough is prevented, and the high-frequencey characteristic of the device is maintained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device including a plurality of chips made of different materials, and particularly to a semiconductor device including a plurality of chips made of a semiconductor material and a piezoelectric material.

Recently, surface wave amplifiers have been developed that perform linear operations such as attenuation or amplification by combining surface acoustic waves with carriers in semiconductors, and surface wave amplifiers that perform nonlinear operations such as convolution or correlation. Research and development of semiconductor devices such as convolvers are actively being conducted.

For this purpose, a surface acoustic wave element that generates surface acoustic waves and a semiconductor element that generates carriers within the semiconductor are required. The pixel elements made of semiconductor material are arranged on a common substrate and electrically connected.

FIG. 1 is a perspective view showing the conventional structure of the semiconductor device as described above, in which 1 is a chip A forming a surface acoustic wave element, 2 is a chip B forming a semiconductor element, and 3 is both the above chips A.
, B are placed on the package board, 4 is a lead terminal provided on the package board 3, and 5 and 6 are chips A and B.
Electrodes provided on the surface, 7 a bonding wire connected between the electrodes 5 and 6, and 8 a bonding wire connected between the electrodes 5 and 6 and the lead terminal 4.

By the way, since the surface acoustic wave element 1 and the semiconductor element 2 are made of different materials, there are many problems in the manufacturing method when combining the pixel elements to form one semiconductor device. For example, when electrically connecting a pixel element, the surface of the surface acoustic wave element 10 has a large number of striped electrodes 5 such as 1-2μ wide KL called transducers for inputting and outputting electrical signals. However, this minute medium electrode 5 is connected to an electrode 6 on the surface of the semiconductor element and a wire 7 made of Al, Au, etc. of about 25 μm.
Therefore, it is necessary to connect by wire bonding method.

However, since the minute medium electrode 5 is processed and formed by photolithography, its thickness is usually limited to 0.3 to 0.5 μm from the viewpoint of processing accuracy, and it is difficult to perform the wire bonding. A reliable connection cannot be obtained unless the thickness is 1μ or more.

In addition, wires connected by the wire bonding method are
Because they are connected to pixel elements across the air, lead capacitance and feedthrough increase when handling high-frequency signals, significantly degrading the characteristics of the device.

The present invention has been made in response to the above problems, and consists of a plurality of chips made of different materials arranged on one plane through insulating connections, and a metal plate placed between the plurality of chips so as to be in close contact with each other. It is an object of the present invention to provide a semiconductor device configured to eliminate the conventional drawbacks by providing wiring, and a method for manufacturing the same.

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 2 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention. The same parts as in FIG. The insulating connection portion is provided so as to be flush with both chips A and B, and is made of a polymer compound such as polyimide or epoxy resin. Reference numeral 10 indicates another insulating connection part provided between the back surface of the chip B and the package substrate 3, and is made of a flexible material with elasticity such as silicone or epoxy resin. &11 indicates the connection between the back surface of the chip B and the package board 3. A conductive connecting portion provided between the substrates 3, made of various resin materials containing metal powder, and maintained in an excellent electrical and heat dissipating state. Reference numeral 12 denotes a metal wiring made of A7, Au, etc., which is provided so as to be in close contact with the surface of the chip A and the chip 18. This metal wiring 1
2 is chip A first.

A metal material is deposited on the entire surface of B and the insulating adhesive 9 by a vapor deposition method or the like, and then processed into a desired shape by a photolithography method. At the same time as this metal wiring 12 is formed, an electrode of the chip itself, for example, a minute electrode 5 on the surface of the chip may be formed. This can be easily obtained by simply changing the mask pattern used in photolithography. Figure 3 is the second
This is a sectional view showing a manufacturing method for obtaining the structure shown in the figure, and will be explained in the order of steps below.

First, as shown in FIG.
3. They are arranged horizontally with a gap 14 between the two surfaces.

The vacuum chuck 13 is made of a material that does not adhere to the insulating adhesive 9 that will be used next, such as fluororesin, polyethylene, silicone resin, etc., and its surface is formed to be smooth.

Vacuum chuck 13 the surface of chip A and chip 18.
In a strongly suctioned state, the gap 14 between the chips A and B is filled with a fluid polymer compound such as polyimide or epoxy resin so that the gap 14 is completely filled. Subsequently, after performing a predetermined curing treatment to form an insulating connection part 9, the chip A integrated by this insulating connection part 9,
Remove B from the surface of the vacuum chuck 13. The smoothness of the surface of the vacuum chuck 13 allows the chips A, B and the insulating connection portion 9 to be arranged on the same plane.

Next, as shown in Figure 3 (bl), chips A and B are placed on a package substrate 3 made of a metal plate or an insulating plate on which a conductive layer is formed, and the back side of chip A is insulated with silicone, epoxy resin, etc. A conductive adhesive such as a conductive resin is applied to the back surface of the chip B, and the chip B is placed with a conductive adhesive such as a conductive resin applied thereto.

Subsequently, a desired curing treatment is performed to form other insulating connecting portions 10 and conductive connecting portions 11. The combination of the insulating adhesive and the conductive adhesive is not limited to the above, but other materials may be used depending on the materials and structure of the chips A and B.

Next, as shown in FIG. 3(c), a metal material such as Al or Au is deposited on the surfaces of the chips A and B fixed on the package substrate 3 by a known vapor deposition method or sputtering method. Subsequently, by removing unnecessary portions using a photolithography method, metal wiring 12 extending over the surfaces of chips A and B processed into a desired shape is formed. When processing this metal wiring 12 by photolithography, at the same time, the electrode 5 or 6 of the chip As or B itself,
Alternatively, both 5.6 and 5.6 can be formed.

Through the above steps, the structure shown in FIG. 2 can be obtained.

FIG. 4 is an enlarged perspective view particularly showing the structure near the metal wiring 12. FIG.

As is clear from the above description, according to the present invention, a plurality of chips made of different materials are arranged on one plane via insulating connection parts, and are in close contact with the surfaces between the plurality of chips! Since the structure is such that metal wiring is provided, there is no need to connect the metal wiring using a bonding method, and electrical connections between chips can be made regardless of the thickness of the metal wiring. Get a reliable connection.

Furthermore, since metal wiring does not exist in the air between chips, increases in lead capacitance and feedthrough are prevented even when handling high frequency signals, and device characteristics do not deteriorate.

The number of chips does not need to be limited to two as shown in the embodiment, and the present invention can also be applied to a case where three or more chips are used.

The present invention makes it easy to improve the characteristics of semiconductor devices including surface acoustic wave elements that require small medium electrodes on the surface.
It can be expected to be applied to a wide range of applications.

[Brief explanation of the drawing]

1 and 4 are perspective views showing a conventional device and an embodiment of the present invention, and FIGS. 2 and 3 (a) to 3(C) are sectional views showing an embodiment of the present invention. 1... Chip A (surface acoustic wave element), 2... Chip B (semiconductor element), 3... Package substrate, 5, 6...
...Chip electrode, 9.10...Insulating connection part, 11.
...Conductive connection part, 1 [...Metal wiring. Figure 1 Figure 2 Figure 3 (0) Figure 4

Claims (1)

[Claims] 1. A plurality of chips made of different materials arranged on one plane, an insulating connection portion filled between the plurality of chips and forming the same surface as the chips, and the plurality of chips A semiconductor device comprising: a metal wiring provided on an interchip surface of the semiconductor device. 2. The semiconductor device according to claim 1, wherein the plurality of chips are made of a semiconductor material and a piezoelectric material. 3. The semiconductor device according to claim 1 or 2, wherein the chip made of the piezoelectric material is a surface acoustic wave element. 4. A step of arranging a plurality of chips made of different materials on one plane, a step of filling an insulating adhesive between the plurality of chips, and a step of providing metal wiring across the surfaces between the plurality of chips. , and a method for manufacturing a semiconductor device. 5. A method for manufacturing a semiconductor device according to claim 4, characterized in that electrodes of the chip itself are provided at the same time as the metal wiring.